A new technique for multilayer LPE

A novel technique is presented which allows LPE deposition of a large number of layers without the disadvantages arising from sliding container parts. Solutions of different compositions or containing different dopants are arranged in separate chambers. By rotation of the whole device the solutions move from one chamber to the next one without intermixing, and by controlled cooling, epitaxial layers are deposited onto the substrates fixed at the chamber walls. The sequence of the layers is determined by the sense and the angles of rotation, and the thickness of each layer is determined, among many other factors, by the cooling rate and dipping time. Up to 15 layers of III–V compounds have so far been produced in a double-screw device, with thicknesses between 0.1 to 10 μm and thickness reproductivity of about 10%. In addition, the fabrication of LED's, III–V lasers, and solar cells, and possibly superlattice devices by the MultiLPE technique can be considered.     

Epitaxial growth on optical gratings for distributed feedback GaAs injection lasers

Good quality epitaxial overgrowth of Al_0.3Ga_0.7As on corrugated GaAs and Al_0.12Ga_0.88As surfaces has been achieved by molecular-beam epitaxy. The electrical properties of the interface appear to be equivalent to those prepared by LPE without growth interruption. The corrugations were third order Bragg gratings of ～0.37 μm period and ～0.20 μm depth and were formed by ion milling. Separate confinement heterostructure injection lasers with these periodic corrugations in the optical cavity have demonstrated lasing behavior characteristic of distributed feedback. They have operated with room-temperature threshold current densities as low as 2.2 kA/cm². These results suggest that the MBE overgrowth is a useful technique for the fabrication of integrated optoelectronic structures which include active devices.     

The dependence of surface morphology of GaSb- and AlxGa1–xSb epitaxial layers on the conditions of LPE growth

The present work shows the dependence of surface morphology of the GaSb and Al_xGa_1–xSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 °C a supersaturation of 5—10 °C and a cooling rate of 0.24—0.4°C/min for GaSb epitaxial layers and 0.8—1.2 °C/min for Al_xGa_1–xSb epitaxial layers is necessary to obtain a flat and smooth surface.     

LPE Growth of GaInAsP/InP Heterostructures for 1.3 μm Planar Buried Mesa Lasers

LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/InP heterostructures with the active layer flanked by two waveguiding layers. The optical waveguide geometry was optimised to yield minimum threshold current density. Low-temperature (600°C) LPE process was employed to regrow the etched mesa structure. The prepared PBMR laser devices with optical resonator lengths of 250 μm exhibited room temperature threshold current values near 20 mA and T₀ values in the range 60–70K. Optical power-versus-current characteristics were linear up to 25 mW.     

Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga–As–Bi melt

GaAs epitaxial layers of high structural quality have been realised from Ga–As–Bi melt using liquid-phase epitaxy (LPE). LPE grown GaAs epitaxial layer using bismuth solvent on GaAs substrate has been found to be of good structural perfection as compared to layers using gallium solvent. The temperature-dependent PL spectra of GaAs layer, grown from Ga+Bi mixed solvent has shown that the use of bismuth does not change the band energy. ECV depth profile of heavily zinc-doped epitaxial layer shows uniform doping in the GaAs layer grown using gallium solvent as compared to the layer grown using bismuth solvent.     

Low-temperature LPE Overgrowth of InGaAs/InP Mesa Heterostructure

Preparation of planar buried mesa ridge (PBMR) epitaxial wafers suitable for integrated optoelectronic circuits is presented. For this purpose the LPE growth of InP and InGaAsP (λ_g = 1.3 μm) below 600 °C on nonplanar ridge pattern was realized. Etching of the InGaAsP/InP ridge structure with ridge of 2–2.5 μm was found to be reproducible when HBr:H₂O₂:H₂O etchant was used. The best PBMR epitaxial wafers were obtained via regrowth in multiple-bin sliding boat by two thin layers of InP using a combination of one- and two-phase growth processes between 600 and 594 °C.     

InGaAsP quaternary layers on InP (100) substrate analysed by ion backscattering and channeling

In_1−xGa_xAs_yP_1−y layers LPE grown on InP(001) substrates are analysed by the Rutherford backscattering and channeling techniques. In addition to the layer thicknesses the compositions are determined from the random spectra and compared with the PL and XRD results. The high dechanneling rate of the He⁺ ions for [100] incidence is attributed to the displaced atoms in the distorted crystal lattice of these otherwise high-quality epitaxial layers. We find a characteristic value of Δ_χdist(0.1) = 2.3 ± 0.3% which must be taken into account for estimations of crystalline quality.     

Liquid-phase epitaxy of ZnSe from Zn-Ga solution

Undoped or Ga doped ZnSe single crystal layers with thicknesses between 3 and 13 μm were grown on ZnS_xSe_1?x (0 ? x ? 1) single crystal substrates by liquid phase epitaxy in a sealed tube system from a Zn or Zn-Ga alloy solution. Smooth and uniform epitaxial layers with high crystal perfection were obtained on the (111)- and (100)-oriented substrates. All the epitaxial layers were n-type and highly conductive (0.1 < ? < 10 Ω cm). A remarkable enhancement of the blue part of the photoluminescence spectra at room temperature was observed for the epitaxial layers grown from the Zn-Ga alloy solution.     

Growth of Heterostructures Based on InAs–AlxGa1–xSb

It is reported on the liquid phase epitaxial (LPE) growth of heterostructures on the base of InAs–Al_xGa_1–xSb. The paper includes the investigation of epitaxial layers of Al_xGa_1–xSb alloys on InAs substrates and results of experiments for the determination of optimum growth regimes.     

Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured and compared with conventional LPE grown AlGaAs epitaxial layer. The behaviour of GaAs and AlAs like LO phonons has been found to vary with the aluminum composition in the grown layer. Raman peak positions have been observed to shift to lower wavenumber in GaAs like LO phonon and higher wavenumber side of AlAs like LO phonon. Aluminum free features have been noticed in IEE grown AlGaAs (x > 0.8) hetero epitaxial layers.     

GaAs LPE growth and its application to FET

Residual impurities and deep levels in the LPE GaAs layers grown by a sliding boat method were studied. Residual impurities were investigated by monitoring oxygen and water vapor contents in the exhaust gas during heat treatment. The results are satisfactorily explained by assuming oxygen as a dominant residual impurity. Electron traps with a density higher than 5 × 10¹² cm^-3 were not observed in the LPE layers, whereas in VPE layers, 0.82 eV electron traps were always observed. LPE double layers (high purity buffer layer and active layer) were fabricated into FET's. GaAs FET's with a 1 μm gate showed no hysteresis loops in the I–V characteristics and had fairly good high-frequency characteristic (f_max = 70 GHz, NF = 2.4 dB at 10.4 GHz).     

Lattice Constant of AlAs

The value of AlAs lattice constant was established in two ways. First, by extrapolating the results for Al_xGa_1−xAs LPE (a_AlAs = 5.6608 Å) and MBE grown epitaxial layers (a_AlAs = 5.6620 ± 0.0001 Å). Second, for AlAs MBE-grown epitaxial layer (a_AlAs = 5.6620 ± 0.0001 Å). The measurements were performed with a high accuracy X-ray diffractometer and compared with results of photoluminescence measurements.     

Growth and characterization of SSD InP crystals used as substrates for infra-red LED's

Bulk indium phosphide crystals have been grown by the synthesis, solute diffusion (SSD) method. Various growth temperatures and temperature gradients in the indium melt were investigated. The growth temperature of about 850–900°C and the temperature gradient of about 10–15°C cm⁻¹ were found as the most suitable growth conditions. All grown crystals were of the n-type either undoped or doped with Te or Sn. Infrared light-emitting junctions were grown by single LPE process. Characteristic surface structures of InP epitaxial layers as a function of the growth temperature and cooling rate were observed. Efficiencies of LED's have been typically 0.8%. Single LPE process on LEC InP substrates has given LED's with substantially lower efficiencies.     

Large area lateral overgrowth of mismatched InGaP on GaAs(111)B substrates

Application of InGaAs/InGaP double‐heterostructure (DH) lasers increases the band offset between the cladding layer and the active layer more than the use of conventional 1.3 µm InGaAsP/InP lasers. As a first step in realizing 1.3 µm InGaP/InGaAs/InGaP DH lasers, we proposed InGaP lattice‐mismatched epitaxial lateral overgrowth (ELO) technique and successfully carried out the InGaP growth on both GaAs (100), (111)B and InP (100) substrates by liquid phase epitaxy. In this work, we grew the InGaP crystal on GaAs (111)B substrate by adjusting Ga and P composition in In solution, to obtain In_0.79Ga_0.21P (λ = 820 nm) virtual substrate for 1.3 µm InGaAs/InGaP DH lasers. To grow the InGaP all over the lateral surface of the substrate, the growth time was extended to 6 hours. The amount of InGaP lateral growth up to 2 hours was gradually increased, but the lateral growth was saturated. The InGaP lateral width was about 250 µm at the growth time of 6 hours. We report the result that optical microscope observation, CL and X‐ray rocking curve measurements and reciprocal lattice space mapping were carried out to evaluate the crystal quality of the grown InGaP layers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and electrical characteristics of InGaAsN layers grown by LPE

Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN layers grown by low-temperature LPE have been studied and related to the growth conditions.In the case of lattice matching, flat and uniform mirror-like layers of 8–10 μm in thickness are obtained. The compositions of the layers under study have been determined by combination of X-ray microanalysis and X-ray diffraction methods to be In_0.035Ga_0.065As_0.086N_0.014. The lattice mismatch between layer and substrate Δa_l/a_s calculated from X-ray diffraction curves is less than?7×10^?4 for all samples. The layers grown at lower epitaxy temperatures exhibit the highest crystalline quality, better lattice match and better homogeneity. This is in good agreement with the results of morphological study by atomic force microscopy which show root mean-square surface roughness of 0.18 nm for the best layers.CV and Hall measurements reveal that intentionally undoped InGaAsN layers are n-type with free carrier concentration about one order of magnitude higher in comparison to layers not containing nitrogen and high electron mobility values over 2000 cm²/Vs. A dramatic reduction in the free carrier concentration and slightly increase in mobility are observed for Sn-doped InGaAsN layers.     

Determination of the diffusion coefficient of arsenic in Ga solution from growth rate measurements of LPG GaAs

On the basis of the LPE GaAs growth rate measurements in which we used current marks of time, the diffusion coefficient and the critical supercooling of arsenic in Ga solution by a semiempirical method was determined. Some knowledge of these parameters is indispensable for investigating the growth mechanism and kinetics of epitaxial layers from high temperature solutions. Taking into account the fact that the diffusion coefficient as a function of temperature is of the form D(T) = D₀ · exp (–B/T), the results were extrapolated in a range of temperatures 750–950°C typical for liquid epitaxy of GaAs.     

Infrared optical characterization of epitaxial layer – substrate systems (II). Experimental results for AlxGa1−xAs/GaAS

Infrared reflectance and transmittance spectra and Raman scattering spectra of the epitaxial layer-substrate system Al_xGa_1−xAs/GaAs with compositions in the range x = = 0.08–0.49 are measured in the wavenumber range from 40 to 4000 cm⁻¹. In analysing the spectra in terms of the respective theoretical relations for an optical two-layer system the thickness of the layers, the optical mode characteristics and the free carrier parameters are determined. From a comparison with existing literature data for Al_xGa_1−xAs it is concluded that infrared optical measurements on epitaxial layer-substrate systems can be successfully employed to evaluate the material parameters of epitaxial layers with thicknesses down to a few micrometers.     

A complex method for structural investigation of GaAs1−xPx epitaxial layers grown on GaAs substrates

A universal X-ray diffractometer is used for the structural complex investigation of GaAs_1−xP_x epitaxial layers, grown on the (100) face of GaAs substrate. Information is obtained from the analyses of diffraction patterns for some qualities of the epitaxial layers: crystallographical orientation, composition, thickness, as well as structure of the transition region. The suggested complex method has important advantages against the standard Laue method. It is far easier express and convenient for serial investigations.     

Double heterostructure lasers prepared by LPE on medium-quality GaAs substrates under controlled as vapour conditions

The fact that defect formation in (Ga, Al)As LPE layers can be suppressed by the presence of arsenic vapour is employed to improve properties of double heterostructure (DH) lasers. The controlled vapour pressure (CVP) method is implemented using a modified LPE horizontal carbon boat. Growth kinetics study under near-equilibrium conditions shows that the presence of arsenic vapour diminishes the growth rate of aluminium-containing layers; no such influence has been observed with the GaAs layers. The CVP method, compared with the customary LPE, has a beneficial effect on the DH surface and cross sections perfection, as well as on the lasing characteristics (differential quantum efficiency, threshold current). Observed values of the parameter T₀, characterizing temperature dependence of the laser threshold current, fall into the vicinty of 200 K. The results have been obtained on medium-quality GaAs substrates.     

Growth of single crystals of monticellite CaMgSiO4: Cr from melt by floating zone technique and the study of their composition

Crystallization of monticellite CaMgSiO₄ from melt by the floating-zone technique was studied at different compositions of feed rods. The compositions of rapidly cooled melts and different regions of grown crystals were investigated by the X-ray phase and microprobe analyses. The inclusions of secondary phases were identified. The range of most promising compositions of the charge for technology of growing large high-quality crystals is established. The mathematical model of the changes in the melt composition during monticellite crystallization is constructed.