Effect of Electric Field on Dielectric Properties of SnO2 Sb2O3 and their Mixed Thin Films

Thin films of various thicknesses in the MIM structure have been prepared from the the powders of SnO₂, Sb₂O₃ and (SnO₂ + Sb₂O₃) of high purity by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. Dielectric properties of SnO₂, Sb₂O₃, and their mixed thin films have been studied with ac and dc electric fields and frequency. Capacitance and loss tangent are almost independent on dc voltage upto 1.0 V for SnO₂, 10.0 V for Sb₂O₃ and 2.5 V for mixed films. These capacitors become unstable at 1.0 V for SnO₂ films and 2.5 V for mixed films. For higher film thicknesses the decay in these films starts at higher voltages. Capacitance and loss tangent increases with applied ac voltage in SnO₂, Sb₂O₃, and their mixed films. A comparison of the capacitance values of SnO₂, Sb₂O₃, and their mixed films showed that the capacitance values are less in Sb₂O₃ as compared to SnO₂ films. In mixed films the capacitance is greater than the constituent films. These studies have shown that Sb₂O₃ films are found to be more stable compared to SnO₂ and their mixed films for ac and dc voltages. The results thus obtained on SnO₂, Sb₂O₃, and their films are presented and discussed.     

Ageing effect on dielectric properties of SnO2, Sb2O3, and their mixed thin films

Thin films of various thicknesses in the form of MIM structures have been prepared from the powders of high purity of SnO₂, Sb₂O₃, and their mixed powders separately by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. The dielectric properties of these oxide thin films have been studied with ageing time and also with frequency at room temperature. The results obtained have shown that the capacitance and loss tangent of the structures initially fall off rapidly and thereafter they attain a constant value even after ageing the capacitors for about 20 days. The rapid fall of capacitance and loss tangent may be due to the rapid decrease in the density of defects due to ageing time. The results thus obtained on SnO₂, Sb₂O₃, and their mixed thin film capacitors are presented and discussed.     

Substitution effects on ferroelectric,leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Bi_4‐xSb_xTi₃O₁₂ (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by sol‐gel method. The effects of various Sb³⁺ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi_4‐xSb_xTi₃O₁₂ (x≠0) thin films prefer (117) orientation. The substitution Sb³⁺ for Bi³⁺ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi_4‐xSb_xTi₃O₁₂ films display exciting electric properties. Especially when x = 0.04, the film Bi_3.96Sb_0.04Ti₃O₁₂ has achieved the max 2Pr value of 87μC/cm². This film also has a better anti‐fatigue characteristic, which can be up to 10¹⁰ switching cycles without fatigue. The leakage current density improved with J = 8×10⁻⁸ A/cm².     

Influence of temperature on the microcrystalline structure of thermally evaporated Sb2S3 thin films

Thin films of antimony trisulfide (Sb₂S₃) were prepared by thermal evaporation under vacuum (p=5×10^–5 torr) on glass substrates maintained at various temperatures between 293 K and 523 K. Their microstructural properties have obtained by transmission electron microscopy (TEM). The electron diffraction analysis showed the occurrence of amorphous to polycrystalline transition in the films deposited at higher temperature of substrates (523 K). The polycrystalline thin films were found to have an orthorhombic structure. The interplanar distances and unit‐cell parameters were determined by high‐resolution transmission electron microscopy (HRTEM) and compared with the standard values for Sb₂S₃. The surface morphology of Sb₂S₃ thin films was investigated by scanning electron microscopy (SEM). The optical transmission spectra at normal incidence of Sb₂S₃ thin films have been measured in the spectral range of 400–1400 nm. The analysis of the absorption spectra revealed indirect energy gaps, characterizing of amorphous films, while the polycrystalline films exhibited direct energy gap. From the photon energy dependence of absorption coefficient, the optical band gap energy, E_g, were calculated for each thin films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of electrical properties in mixed oxide sandwich structures

I—V characteristics of sandwiched Al—(SnO₂ + Sb₂O₃)—Al mixed films have been studied for different thicknesses. The current-voltage curves in general exhibit three regions, ohmie, non-ohmic and breakdown regions. The breakdown voltage increases and the dielectric strength decreases with increase of film thickness. The de breakdown studies have been done and optical photomicrographs of breakdown patterns during different stages of de voltage have been taken and the results are discussed.     

Structural and optical properties of TiO2:SnO2 thin films prepared by sol gel method

ABSTRACT

TiO₂:SnO₂ thin films were deposited on glass substrates, by using sol gel spin coating method with different ratio (3%, 5% and 7%) at 3200 rpm, to study their effect on different properties of TiO₂: SnO₂ thin films. The structural and optical properties of films have studied for different ratio. These deposited films have been characterized by various methods such as X-Ray Diffraction (XRD), Ultra Visible spectroscopy. The (XRD) can be used to identify crystal structure of as deposited films. The Transmission spectra have shown the transparent and opaque parts in the visible and UV wavelengths.     

Influence of thermoannealing on crystallinity and optical properties of Sb2S3 thin films

Sb₂S₃ thin films are obtained by evaporating of Sb₂S₃ powder onto glass substrates maintained at room temperature under pressure of 2×10^‐5 torr. The composition of the thin films was determined by energy dispersive analysis of X‐ray (EDAX). The effect of thermal annealing in vacuum on the structural properties was studied using X‐ray diffraction (XRD) technique and scanning electron microscopy (SEM). The as‐deposition films were amorphous, while the annealed films have an orthorhombic polycrystalline structure. The optical constants of as‐deposited and annealed Sb₂S₃ thin films were obtained from the analysis of the experimental recorded transmission spectral data over the wavelength range 400‐1400 nm. The transmittance analysis allowed the determination of refractive index as function of wavelength. It was found that the refractive dispersion data obeyed the single oscillator model, from which the dispersion parameters (oscillator energy, E₀, dispersion energy, E_d) were determined. The static refractive index n(0), static dielectric constant, ε_∞, and optical band gap energy, E_g, were also calculated using the values of dispersion parameters. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Structure and electrical conduction of Sb2O3 thin films

Antimony trioxide (Sb₂O₃) thin films have been deposited onto glass substrates using thermal evaporation technique at room temperature. The structural feature and surface morphology were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Sandwich‐type structures were deposited with films thickness d = 0.55 μm using evaporated electrodes of silver. Current‐voltage (J‐U) characteristics have been measured at various fixed temperatures in the range 293‐473 K. In all cases, at low electric field (E <10⁴ V/cm), ohmic behavior is observed. However, at high electric field (E >10⁴ V/cm), non‐ohmic behavior is observed. An analysis of the experimental data indicates that in the range of high‐applied electric field, the dominant conduction mechanism is space charge limited currents (SCLC). Using the relevant SCLC theory, the carrier concentration, total trap concentration and the ratio of free charge to trapped charge have been calculated and correlated with changes in the structures of antimony trioxide thin films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ionic conductivity of Li2OB2O3 thin films

The ionic conductivity of evaporated Li₂OB₂O₃ thin films has been studied. These thin films were found to show a considerably high ionic conductivity of 1 × 10^?7 Ω^?1 cm^?1 at room temperature. The conductivity increases with increasing Li content and exhibits a maximum value near 3Li₂O·B₂O₃. The structure of these films was determined using infrared absorption and laser Raman scattering spectroscopy. Using the results, the correlation between structure and conductivity is also discussed.     

Glass formation in the Sb2O3-CdCl2-SrCl2 ternary system

Vitreous systems based on antimony oxide Sb₂O₃ have been investigated. The limits for glass formation are reported in the Sb₂O₃-CdCl₂-SrCl₂ ternary system, and in the Sb₂O₃-SrCl₂-(0.5CdCl₂ + 0.5ZnCl₂) pseudo ternary system. Amorphous state is confirmed by XRD patterns. Thermal measurements implemented by differential scanning calorimetry show that Tg is above 300 °C. As a general trend, Tg increases with chloride content. These glasses have an extended transmission in the mid-infrared spectrum with a refractive index larger than 2. The influence of the CdCl₂/Sb₂O₃ substitution on the physical properties has been studied in the (90 − x)Sb₂O₃-xCdCl₂-10SrCl₂ system: thermal expansion, Vickers microhardness, Young and bulk modulus decrease as cadmium concentration increases. An inverse dependence is observed for shear modulus. This behaviour is discussed in relation to structural hypothesis.     

Properties of Sm‐doped CaNb2O6 thin films deposited by radio‐frequency magnetron sputtering

Sm‐doped CaNb₂O₆ (CaNb₂O₆:Sm) phosphor thin films were prepared by radio‐frequency magnetron sputtering on sapphire substrates. The thin films were grown at several growth temperatures and subsequently annealed at 800 °C in air. The crystallinity, surface morphology, optical transmittance, and photoluminescence of the thin films were investigated by X‐ray diffraction, scanning electron microscopy, ultraviolet‐visible spectrophotometry, and fluorescence spectrophotometry, respectively. All of the thin films showed a main red emission radiated by the transition from the ⁴G_5/2 excited state to the ⁶H_9/2 ground state of the Sm³⁺ ions and several weak bands under ultraviolet excitation with a 279 nm wavelength. The optimum growth temperature for depositing the high‐quality CaNb₂O₆:Sm thin films, which was determined from the luminescence intensity, was found to be 400 °C, where the thin film exhibited an orthorhombic structure with a thickness of 370 nm, an average grain size of 220 nm, a band gap energy of 3.99 eV, and an average optical transmittance of 85.9%. These results indicate that the growth temperature plays an important role in controlling the emission intensity and optical band gap energy of CaNb₂O₆:Sm thin films.     

Broad blue-green-red emissions of SnO2/Pr3+ co-doped phosphate glasses

The photoluminescence properties of SnO₂/Pr^3 + co-doped strontium phosphate glasses (75P₂O₅-25SrO) are studied. An ultrabroad emission band covering blue, green and red is observed in co-doped glasses. In co-doped samples, three downward peaks appear in blue emission region, these coincide with Pr^3 + excitation peaks, indicating the energy transfer through cross-relaxation between SnO₂ and Pr^3 +. The mechanism has been detailed based on the energy level diagrams of SnO₂ and Pr^3 +. The chromaticity coordinates of the co-doped samples with varying doping ratio of SnO₂ to Pr^3 + are calculated. The result demonstrates the possibility of generating white light in the SnO₂/Pr^3 + co-doped phosphate glasses.     

Structure and properties of Sb2O3-containing zinc borophosphate glasses

ZnO–B₂O₃–P₂O₅ glasses formulated with Sb₂O₃ were investigated in the series 50ZnO–10B₂O₃–40P₂O₅ + xSb₂O₃ (x = 0–70 mol%). With increasing Sb₂O₃ content, the values of glass transition temperature decrease from 492 °C down to 394 °C. The dissolution rate of the glasses reveals a maximum for the glass with x = 15 mol% Sb₂O₃. Raman spectra with increasing Sb₂O₃ content reflect the depolymerisation of phosphate chains. Antimony at low Sb₂O₃ content forms individual SbO₃ pyramids manifested in the Raman spectra by a broad vibrational band at ∼520–690 cm⁻¹. In the glasses with a higher Sb₂O₃ content SbO₃ units link into chains and clusters with Sb–O–Sb bridges manifested in the Raman spectra by a strong broad band at 380–520 cm⁻¹. The ³¹P MAS NMR spectra with increasing Sb₂O₃ content reflect the depolymerisation of phosphate chains at low Sb₂O₃ content and only small changes in the PO₄ coordination at a high Sb₂O₃ content. ¹¹B MAS NMR spectra reveal a steady transformation of B(OP)₄ units into B(OP)_4−x(OSb)_x units, accompanied by the transformation of BO₄ into BO₃ units with increasing Sb₂O₃ content.     

Electrical conductivity of antimony oxofluoride Sb3O2F5

The conductivity of antimony oxofluoride Sb₃O₂F₅ is investigated by the complex impedance method in the temperature range of 400–505 K. Sb₃O₂F₅ powder has been prepared by solid-phase synthesis in nickel ampoules at 473 K for 5 h in an argon atmosphere. The Sb₃O₂F₅ conductivity has an ionic character. The ionic conductivity is found to be 5 × 10^?5 S/cm (at 505 K), with an ion-carrier migration energy of 0.82 eV.     

Growth,electrical and optical behaviour of nanocrystalline Ag2Cu2O3 films produced by RF magnetron sputtering

Thin films of Ag₂Cu₂O₃ were formed on glass substrates by RF magnetron sputtering technique under different oxygen partial pressures in the range 5 × 10^‐3 – 8 × 10^‐2 Pa using mosaic target of Ag₇₀Cu₃₀. The influence of oxygen partial pressure on the core level binding energies, crystallographic structure, and electrical and optical properties of the deposited films was studied. The atomic ratio of copper to silver in the films was 0.302. The oxygen content was in correlation with the oxygen partial pressure maintained during the growth of the films. The films formed at oxygen partial pressures < 2 × 10^‐2 Pa was mixed phase of Ag₂Cu₂O₃ and Ag. The films deposited at 2 × 10^‐2 Pa were single phase of Ag₂Cu₂O₃. The crystallite size of the films formed at 2 × 10^‐2 Pa was 12 nm, while those films annealed at 473 K was 16 nm. The nanocrystalline Ag₂Cu₂O₃ films formed at oxygen partial pressure of 2 × 10^‐2 Pa showed electrical resistivity of 8.2 Ωcm and optical band gap of 1.95 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fabrication of Er doped oxyfluoride-silicate glass film by pulsed laser deposition for planar amplifier

Pulsed laser deposition (PLD) technique has been employed to fabricate glassy films based on the Er³⁺ doped oxyfluoride lead-silicate glasses. Glassy films have been produced at temperatures between 300 and 400 °C with O₂ pressures ranging from 25 to 175 mTorr. The film microstructure appears to be determined mainly by substrate temperature. The film refractive index increases with higher temperatures and lower O₂ pressures. The photoluminescence intensity of Er³⁺ ions and lifetime are very much dependent on the film microstructure and defects. Fewer fabrication defects and less porous films produce stronger fluorescence intensity and longer lifetime of Er³⁺ ions. At an optimized temperature and O₂ pressure, the Er photoluminescence properties of the film can be reproduced and are very close to those of target glass. Consequently the work reported here suggested a good candidate for further investigation as a thin film material for EDWA.     

Fabrication and properties of novel low-melting glasses in the ternary system ZnO-Sb2O3-P2O5

Glasses in the ternary system ZnO-Sb₂O₃-P₂O₅ were investigated as potential alternatives to lead based glasses for low temperature applications. The glass-forming region of ZnO-Sb₂O₃-P₂O₅ system has been determined. Structure and properties of the glasses with the composition (60 − x)ZnO-xSb₂O₃-40P₂O₅ were characterized by infrared spectra (IR), differential thermal analysis (DTA) and X-ray diffraction (XRD). The results of IR indicated the role of Sb³⁺ as participant in glass network structure, which was supported by the monotonic and remarkable increase of density (ρ) and molar volume (V_M) with increasing Sb₂O₃ content. Glass transition temperature (T_g) and thermal stability decreased, and coefficient of thermal expansion (α) increased with the substitution of Sb₂O₃ for ZnO in the range of 0-50 mol%. XRD pattern of the heat treated glass containing 30 mol% Sb₂O₃ indicated that the structure of antimony-phosphate becomes dominant. The improved water durability of these glasses is consistent with the replacement of easily hydrated phosphate chains by corrosion resistant P-O-Sb bonds. The glasses containing ?30 mol% Sb₂O₃ possess lower T_g (<400 °C) and better water durability, which could be alternatives to lead based glasses for practical applications with further composition improvement.     

Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

Al₂O₃ and ZrO₂ mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al₂O₃ and ZrO₂ films were deposited by atomic layer chemical vapor deposition (ALCVD) on HF dipped silicon wafers. The growth behavior has been characterized structurally and electrically. ALCVD growth of ZrO₂ on a hydrogen terminated silicon surface yields films with deteriorated electrical properties due to the uncontrolled formation of interfacial oxide while decent interfaces are obtained in the case of Al₂O₃. Another concern with respect to reliability aspects is the relatively low crystallization temperature of amorphous high-k materials deposited by ALCVD. In order to maintain the amorphous structure at high temperatures needed for dopant activation in the source drain regions of CMOS devices, binary Al/Zr compounds and laminated stacks of thin Al₂O₃ and ZrO₂ films were deposited. X-ray diffraction and transmission electron microscope analysis show that the crystallization temperature can be increased dramatically by using a mixed oxide approach. Electrical characterization shows orders of leakage current reduction at 1.1-1.7 nm of equivalent oxide thickness. The permittivity of the deposited films is determined by combining quantum mechanically corrected capacitance voltage measurements with structural analysis by transmission electron microscope, X-ray reflectivity, Rutherford backscattering, X-ray photoelectron spectroscopy, and inductively coupled plasma optical emission spectroscopy. The k-values are discussed with respect to formation of interfacial oxide and possible silicate formation.