Features of electrical conductivity in an incommensurate phase of graphite intercalation compound C10HNO3

Electrical conductivity and conduction-electron spin resonance (CESR) have been studied in stage-2 acceptor α-graphite-nitric acid intercalation compound C₁₀HNO₃. It is found that the electrical conductivity σ_c along the c axis in the structurally incommensurate phase of this compound is temperature independent, whereas the electrical conductivity σ_a along carbon layers exhibits “metallic” temperature behavior. Analysis of the temperature dependences of σ_c, σ_a, and the CESR linewidth demonstrates that, in the incommensurate phase of the graphite intercalation compound, the electrical conductivity along the c axis is realized through a nonband mechanism—the transfer of free charge carriers along thin high-conductivity channels shunting the carbon layers adjacent to the intercalate.     

To the theory of conduction of binary composites

The relationship between the local electric field strength in a binary composite, as an example, with its macroscopic characteristics of a nonuniform medium (effective conductivity σ _e and the derivatives of σ _e with respect to the concentrations and conductivities of the individual components) is discussed. It was demonstrated that the determination of all these parameters in a numerical experiment makes it possible to obtain a detailed information on the properties of the effective conductivity σ _e , especially near the percolation threshold, a metal-dielectric phase transition.     

Low-frequency dispersion of the effective transverse conductivity in inhomogeneous media in strong magnetic field

On crystalline silicon specimens with a nonuniform carrier concentration distribution produced by an optical method, a dispersion of the effective transverse conductivity σ _⊥ ^eff (ω) is observed near the frequency ω≈ω_c=τ _⊥ ^?1 ≡ε/4πσ _⊥ ^eff . At ω<ω_c, an anomalous transverse effective conductivity is observed: σ _⊥ ^eff (ω) is greater than the transverse conductivity of a homogeneous specimen σ _⊥ ^h (ω) (in the frequency range studied in the experiment σ _⊥ ^h (ω) = const). Near ω≈ω_c, the conductivity σ _⊥ ^eff decreases, and, at ω>ω_c it coincides with σ _⊥ ^h .     

Duality and effective conductivity of random two-phase flat systems

The possible functional forms of the effective conductivity σ_e of randomly inhomogeneous two-phase systems at arbitrary values of concentrations are discussed. Two explicit approximate expressions for effective conductivity are found using a duality relation, a series expansion of σ_e in the inhomogeneity parameter z, and some additional conjectures about the functional form of σ_e. They differ from the effective medium approximation, satisfy all necessary requirements, and reproduce the known formulas for σ_e in the weakly inhomogeneous case. This can also signify that σ_e of the two-phase randomly inhomogeneous systems may be a nonuniversal function, depending on some details of the structure of the random inhomogeneities.     

量子化极限情况下MOS反型层二维电子气定域态电子电导率σxx的低频效应

本文分析了量子化极限情况下MOS反型层二维电子气(2DEG)定域态电子电导率的频率特性。主要内容:(1)用费密分布函数随频率变化导出了在2DEG两种主要导电过程的频率特性。即向迁移率边激发导电过程电导率σ_ME(ω)和可变程跳跃导电过程电导率σ_VRH(ω)。发现:σ_ME(ω)和σ_VRH(ω)是一个复数。(2)说明了σ_ME(ω)有较长时间常数τ_n,对应一个低频过程。σ_VRH(ω)有较短时间常数,对应一个高频过程。(3)理论与实验作了比较,拟合结果表明,在实验条件下,向迁移率边E_c激发时间常数τ_n 3.6×10^-6。 关键词：     

Ionic conductivity of polycrystalline samples of KBrKI solid solutions

Ionic conductivity of KBr_xI_1?x(0?x?1) mixed crystals, σ_x, has been measured as a function of temperature in the range of 370°C to close to their melting points. The variation in conductivity, σ_x, with composition in the intrinsic region was found to be non-linear, having a maximum value at x=0.3. The maximum conductivity of KBr_xI_1?x mixed crystals was never far outside the range of conductivity of the component crystals. Several expressions of the relative conductivity, σ_x/σ₁ (σ₁ refers to KBr) have been suggested.     

Charge-density-wave conductivity in NbSe3

The nonlinear conductivity in the charge-density-wave states in NbSe₃ was measured up to the high-field limit. Ohmicity recurs in this limit. The temperature dependence of σ_eo, the extra conductivity in the high-field limit, is in agreement with that of carrier concentration condensed into the CDW, providing an evidence that the nonlinear conductivity is due to CDW motion. The magnitude of σ_eo is very sensitive to the impurity concentration. The mobility of the drifting CDW's is temperature independent and the damping of them is mainly due to the impurity scattering in even pure crystals.     

Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range

Frequency dependence of the real part of the conductivity σ₁(ω) in the region of the transition from almost linear (s < 1) to quadratic (s ≈ 2) can indicate a change in the conduction mechanism (the transition from the variable-range to the fixed-range hopping with increasing frequency); in this case, the sharpness of the change in the slope of the frequency characteristic is related to the dependence of the preexponential factor of the resonance integral on the intercenter distance in the pair. The frequency dependence of the imaginary part of the conductivity σ₂(ω) has no kink in the vicinity of the transition frequency ωcr, remaining almost linear. A large dielectric loss angle |cotγ| = |σ₂|/σ₁ can indicate that the imaginary part of the conductivity at ω < ω_cr is defined by the larger zero-phonon contribution in σ₂^res the region of weak variation in the loss angle γ(ω), which significantly exceeds the relaxation contribution σ₂^res.     

Commensurability oscillations by runaway and pinned electrons

We report on an investigation of commensurability oscillations in antidot square-lattices, and show that the commensurate peaks in resistivity ρ_xxderive from two kinds of electron: runaway and quasipinned electrons. The runaway electrons, which skip away along the antidot arrays, increase the value of conductivity σ_xx; and the quasipinned electrons, which orbit some antidots for a long time, decrease the value of σ_xx. Therefore, by competition between the two different types of electron, the conductivity σ_xxis determined. The conductivity σ_yxin the antidot lattice always has dips at the peaks in ρ_xx. As a result, by combining the of values of σ_xxand σ_yx, the resistivity is determined through the orthodox relation of ρ_xx =  σ_xx/ (σ_xx²  +   σ_yx²).     

Effects of Pauli paramagnetism on superconducting fluctuations

We discuss the effects of the Pauli paramagnetism on the excess conductivity σ^fl due to fluctuations of the superconducting order parameter. We derived a formula for σ^fl for a thin film placed in a magnetic field of an arbitrary orientation α. It was found that σ^fl has a universal behavior as a function of some parameterp which depends on α and ΔH=H-H _c. If ΔH is kept constant and σ^fl is measured as a function of α, in the absence of the Pauli paramagnetism σ^fl is maximum when the field is parallel to the film and is minimum when the field is perpendicular. But in high field superconductors due to the effect of the Pauli paramagnetism σ^fl becomes maximum at some intermediate field orientation. We also discussed the excess conductivity in magnetic alloys in which impurity spins are aligned by an external magnetic field. It was shown that in this case one should expect, with certain strengths of the external field, the excess conductivity which is non-monotonic in temperature.     

On autoionization and pH of liquid water

The ionization constant of water K_w (or pH) is currently determined on the proton conductivity σ₀ which is measured at frequencies lower than 10⁷ Hz. We develop the idea that the high frequency conductivity σ_∞ (~10¹¹ Hz), rather than σ₀ represents a net proton dynamics in water. We count the concentration c of the H₃O⁺ and OH^– ions from σ_∞ to find c to be not dependent on temperature. We conclude that spontaneous ionization of H₂O molecules is not essential in water electrodynamics; the common K_w reflects the thermoactivation of the H₃O⁺ and OH^– ions from the potential of their interaction; the lifetime of a target water molecule does not exceed parts of nanosecond.     

A.c. conductivity in AsF5 doped polyphenylacetylene (PPA)

The a.c. conductivity of semiconducting cis-cisoid polyphenylacetylene (PPA) pellets has been studied at temperatures between 230 and 290 K and frequencies, ?, from 37 to 10⁵ Hz. The a.c. conductivity (σ_a.c.) is found to be strongly temperature dependent. σ_a.c. is proportional to ?^s with s varying from 0.45 to 0.75 as temperature is raised from 230 to 290 K. Both frequency dispersion and strong temperature dependence of σ_a.c. are best explained by the mechanism of hopping conduction in the band-tails.     

Conductivity of a periodic two-component system of rhombic type

The conductivity and the distribution of electric field, current, and charge density in a periodic two-component system composed of rhombs with an arbitrary vertex angle of 2α are investigated. The effective conductivity of such a medium is represented by a tensor with components σ _eff ¹¹ (α) and σ _eff ²² (α) in the principal axes that satisfy the Dykhne relation σ _eff ¹¹ (α) σ _eff ²² (α)=σ ₁σ₂, where σ₁, σ₂ are the isotropic conductivities of media 1 and 2. In addition, the relation σ _eff ²² (α)=σ _eff ¹¹ (π/2?α) is satisfied. The principal axes are directed along the diagonals of the rhombs. It is shown that there are three lines in the rectangle 0<α ≤π/2,?1<Z<1((Z=σ₁?σ₂)/(σ ₁+σ₂)) on which the charge density is expressed in terms elliptic functions. An explicit expression is obtained for all physical quantities on these lines.     

Current-conducting properties of paper consisting of multiwall carbon nanotubes

Electrical conductivity σ(T) of the paper consisting of multiwalled carbon nanotubes (MWCNTs) is studied in the temperature range 4.2-295 K, and its magnetoresistivity ρ(B) at various temperatures in magnetic fields up to 9 T is analyzed. The temperature dependence of the paper electrical conductivity σ(T) exhibits two-dimensional quantum corrections to the conductivity below 10 K. The dependences of negative magnetoresistivity ρ(B) measured at various temperatures are used to estimate the wavefunction phase breakdown length L _φ of conduction electrons and to obtain the temperature dependence L _φ = constT ^?p/2, where p ≈ 1/3. Similar dependences of electrical conductivity σ(T), magnetoresistivity ρ(B), and phase breakdown length L _φ(T) are detected for the initial MWCNTs used to prepare the paper.     

Theory of the transverse static magnetoconductivity in a two-dimensional electron-phonon system

The theory of the transverse static magnetoconductivity (σ_xx) in a two-dimensional system under the simultaneous influence of electron-phonon and electron-impurity interactions is presented. The memory function technique is employed to obtain explicit expression for σ_xx under conditions appropriate for typical Shubnikov-deHaas measurements. It is shown that σ_xx involves two different effective masses and scattering times, of which one is the scattering time in the absence of the magnetic field. In addition, the Landau level width appears in σ_xx, thus providing an experimental means for extracting the same from a study of the background conductivity.     

Crystal-Physical Model of Ion Transport in Nonlinear Optical Crystals of KTiOPO<Subscript>4</Subscript>

The ionic conductivity along the principal axes a, b, and c of the unit cell of the nonlinear-optical high-resistance KTiOPO₄ single crystals (rhombic syngony, space group Pna2₁), which are as-grown and after thermal annealing in vacuum, has been investigated by the method of impedance spectroscopy. The crystals were grown from a solution-melt by the Czochralski method. The as-grown KTiOPO₄ crystals possess a quasi-one-dimensional conductivity along the crystallographic c axis, which is caused by the migration of K⁺ cations: σ_║c = 1.0 × 10^–5 S/cm at 573 K. Wherein the characteristics of the anisotropy of ionic conductivity of the crystals is equal to σ_║c/σ_║a= 3 and σ_║c/σ_║b= 24. The thermal annealing at 1000 K for 10 h in vacuum increases the magnitude of σ_║c of KTiOPO₄ by a factor of 28 and leads to an increase in the ratio σ_║c/σ_║b= 2.1 × 10³ at 573 K. A crystal-physical model of ionic transport in KTiOPO₄ crystals has been proposed.     

Low-frequency optical conductivity of inhomogeneous alloys

The optical conductivity of PdMn_0.7Fe_0.3, Pd₂AuFe, and GdCu alloys with different degrees of homogeneity has been measured. Possible reasons for a low-frequency (E < 1 eV) anomalous maximum in the σ(ω) curves are discussed. The deviation from the Drude behavior of σ(ω) is assigned to the presence of small “metallic” inclusions in the high-resistivity matrix of these alloys.     

Dielectric relaxation and ac conductivity of sodium tungsten phosphate glasses

Studies of dielectric relaxation and ac conductivity have been made on three samples of sodium tungsten phosphate glasses over a temperature range of 77–420 K. Complex relative permitivity data have been analyzed using dielectric modulus approach. Conductivity relaxation frequency increases with the increase of temperature. Activation energy for conductivity relaxation has also been evaluated. Measured ac conductivity (σ_m(ω)) has been found to be higher than σ_dc at low temperatures whereas at high temperature σ_m(ω) becomes equal to σ_dc at all frequencies. The ac conductivity obeys the relation σ_ac(ω)=Aω ^S over a considerable range of low temperatures. Values of exponent S are nearly equal to unity at about 78 K and the values decrease non-linearly with the increase of temperature. Values of the number density of states at Fermi level (N(E _F)) have been evaluated at 80 K assuming values of electron wave function decay constant α to be 0.5 (Å)^?1. Values of N(E _F) have the order 10²⁰ which are well within the range suggested for localized states. Present values of N(E _F) are smaller than those for tungsten phosphate glasses.     

The metal-insulator transition in ‘random’ Al−Ge films

Electronic transport properties have been measured on 3500 Å ‘random’ Al?Ge films. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition at the critical metallic fraction, φ_c=8.8 vol% Al. A new procedure is described for extracting values for the zero temperature conductivity σ(0) from the metallic low temperature conductivity data. When σ(0) is extrapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction φ_c is in good agreement with the room temperature value.     

Hopping conduction in the Landau level tails in GaAs-AlxGa1-xAs heterostructures at low temperatures

We have investigated the temperature dependence of the transverse conductivity σ_xx in the two-dimensional Shubnikov—de Haas oscillation minima in GaAs-Al_xGa_1-xAs heterostructures at temperatures between 10mK and 1 K. We found that for σ_xx ? σ_xx (max), where σ_xx (max) is the conductivity in the corresponding oscillation maxima, the results agree qualitatively with a theory recently published by Ono, predicting $\text{σ}{}_{\mathrm{xx}}\text{∝ (1/T) exp - (T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$, but are not consistent with the estimated T₀-values.