Observation of magnetization step at order–disorder transition in MgB2 single crystals

We have studied the order–disorder transition in high quality MgB₂ single crystals, using a torque magnetometry combined with a ‘vortex shaking’ technique. In the wide range of temperature T, field H and the H direction, we succeed in obtaining reversible magnetization curves M_rev(T, H) by shaking the pinned vortices. Especially at low temperatures below 25 K and high fields, where the irreversible magnetization curve exhibits the peak effect due to the order–disorder transition, it is found that the peak is transformed into the clear step in M_rev(H). Similar step-like behavior is also observed in the temperature dependence of magnetization M_rev(T). These results give direct evidence that the order–disorder transition, which is hidden by the large hysteresis of magnetization, has the nature of first-order transition.     

Effect of grain-boundary flux pinning in MgB2 with columnar structure

We studied the flux pinning properties by grain boundaries in MgB₂ films prepared by using a hybrid physical chemical vapor deposition method on the c-axis oriented sapphire substrates. All the films we report here had the columnar grains with the growth direction perpendicular to the substrates and the grain sizes in the range of a few hundred nanometers. At very low magnetic fields, no discernable grain-boundary (GB) pinning effect was observed in all measuring temperatures, but above those fields, the effect of GB flux pinning was observed as enhanced critical current densities (J_cs) and reduced resistances when an external magnetic field (B) was aligned parallel to the c-axis. We interpret the B dependence of J_c in the terms of flux line lattice shear inside the columnar grains activated by dislocations of Frank–Read source while the flux lines pinned by GB act as anchors for dislocations. Magnetic field dependence of flux pinning force density for B parallel to the c-axis was reasonably explained by the above model.     

MgB2混合态热导率的反常增强

测量了MgB₂多晶样品的混合态热导率，磁场强度为0—7 T，温度范围为5—45 K .实验结果显示MgB₂热导率在低场下迅速上升，高场下趋于饱和，这与MgB₂的 二能隙电子结构有关.对实验结果的分析指出，低温强场下MgB₂多晶样品热导率的显著增强无法完全 用电子热导来解释，并对此进行了讨论. 关键词： 2')" href="#">MgB₂ 热导率 混合态     

STRUCTURE ANALYSIS OF NEW SUPERCONDUCTOR MgB2

The superconductivity of a sintered pellet of the newly discovered MgB₂ superconductor has been studied with magnetic measurements and its crystal structure was analysed using the Rietveld method of powder X-ray patterns. It has hexagonal symmetry (S.G. P6/mmm) with unit cell lattice parameters a=0.308136(14)nm and c=0.351782(17)nm.     

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

HIGH-PRESSURE SYNTHESIS OF MgB2 SUPER-CONDUCTOR WITH Tc ABOVE 39 K

We report on the high-pressure synthesis and superconductivity of MgB₂ intermetallic compounds. The compounds have been obtained through high-pressure sintering of the mixtures of magnesium and boron fine powders under 5.0 GPa and at ～1000℃ for 30 min. Magnetic measurements using a SQUID magnetometer show the sharp bulk superconducting transition above 39 K; the four-probe dc resistivity measurements indicate the highly-conductive normal state and sharp superconducting transition. The results highlight that high-pressure synthesis would be a promising way to promote the studies of this new kind of intermetallic superconductors.     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

MgB2超导薄膜的微波测量

报道了利用蓝宝石介质谐振器技术测量MgB₂超导薄膜的微波表面电阻R_{s、0K时的穿透深度λ(0)和超导能隙Δ(0).λ(0)和Δ(0)的值是通过先测量样品穿透深度λ(T)的变化量Δλ(T)，然后由BCS理论模型拟合Δλ(T)的实验数据得到的.测试样 品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜， 薄膜的超导转变温度和转变宽度分别为38K和01K.微波测试结果表明在10K，18GHz下M gB2薄膜的Rs约为100μΩ，可以和高质量的YBCO薄膜的Rs值相比拟；BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm，Δ(0)=113k Tc.}     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

Iron doping effect on superconducting properties of MgB2

Iron-doped MgB₂ bulks are prepared by hybridized diffusion method using nano-powder and macro-powder of pure iron as iron source. The doping effect on superconductivity transition temperature, T_c, and critical current J_c have been investigated. It is found that both T_c and J_c of MgB₂ show quite different features depending on the particle size of the dopant powders. It is demonstrated that different from iron bulk or large size powders, iron nano-powders are active dopant for MgB₂ which suppresses both T_c and J_c of MgB₂.     

Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

In this paper, we study the doping effect of sorbic acid (C₆H₈O₂), from 0 to 20 wt.% of the total MgB₂, on critical temperature (T_c), critical current density (J_c), irreversibility field (H_irr) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J_c(B) in the framework of percolation theory and it is found that the J_c(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J_c is due to the reduction of anisotropy in high field region.     

Enhanced critical current densities in Cu-sheathed MgB2

Micron-scale mixing of magnesium and boron powders by mechanical alloying allows the MgB₂ formation reaction to proceed as low as 450 °C, with high-quality material formed in an hour at 600 °C. At these low reaction temperatures the reaction can be performed in situ in a copper sheath, and it is found that the presence of copper enhances the superconducting properties of the MgB₂. Self-field critical current densities, calculated from full critical-state simulation of magnetization hysteresis, are up to 7 × 10⁵ A/cm² at 13.6 K and 1 × 10⁵ A/cm² at 30 K.     

Magnetocrystalline anisotropy in RAu2Ge2 (R = La, Ce and Pr) single crystals

Anisotropic magnetic properties of single crystalline RAu₂Ge₂ (R=La, Ce and Pr) compounds are reported. LaAu₂Ge₂ exhibits a Pauli-paramagnetic behaviour whereas CeAu₂Ge₂ and PrAu₂Ge₂ show an antiferromagnetic ordering with Nèel temperatures T_N = 13.5 and 9 K, respectively. The anisotropic magnetic response of Ce and Pr compounds establishes [0 0 1] as the easy axis of magnetization and a sharp spin-flip type metamagnetic transition is observed in the magnetic isotherms with H // [0 0 1]. The transport and magnetotransport behaviour of these compounds, in particular LaAu₂Ge₂, indicate an anisotropic Fermi surface. The magnetoresistivity of CeAu₂Ge₂ apparently reveals the presence of a residual Kondo interaction. A crystal electric field analysis of the anisotropic susceptibility in conjunction with the experimentally inferred Schottky heat capacity enables us to propose a crystal electric field level scheme for Ce and Pr compounds. For CeAu₂Ge₂ our values are in excellent agreement with the previous reports on neutron diffraction. The heat capacity data in LaAu₂Ge₂ show clearly the existence of Einstein contribution to the heat capacity.     

利用电泳法在金属基底上制备MgB2超导厚膜

利用电泳技术在高熔点金属基底Ta，Mo和W上制备MgB₂超导厚膜.厚膜中的MgB2晶粒结合紧密，粒度小于1μm，呈随机取向生长.电阻测量表明沉积在Ta，Mo，W上的MgB₂厚膜的超导起始转变温度分别为36.5K，34.8K，33.4K，对应的转变宽度为0.3K，1.5K和2.0K.三种基底上制备的MgB₂厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同，MgB₂/Mo厚膜的临界电流密 关键词： 2超导厚膜')" href="#">MgB₂超导厚膜 电泳 金属基底     

Microstructural and superconducting properties of C6H6 added bulk MgB2 superconductor

The effect of aromatic hydrocarbon (benzene, C₆H₆) addition on lattice parameters, microstructure, critical temperature (T_c), critical current density (J_c) of bulk MgB₂ has been studied. In this work only 2 mol% C₆H₆ addition was found to be very effective in increasing the J_c values, while resulting in slight reduction of the T_c. J_c values of 2 mol% C₆H₆ added MgB₂ bulks reached to 1.83×10⁶ A/cm² at 15 K and 0 T. Microstructural analyses suggest that J_c enhancement is associated with the substitution of carbon with boron and which also results in the smaller MgB₂ grain size. The change in the lattice parameters or the lattice disorder is claimed as a cause of the slight reduction in the T_c by carbon addition. We note that our results show the advantages of C₆H₆ addition include homogeneous mixing of precursor powders, avoidance of expansive nanoadditives, production of highly reactive C, and significant enhancement in J_c of MgB₂, compared to un-doped samples.     

Laser induced photovoltages in B-riched MgB2 thin films

Ultrafast photoelectric effects have been observed in MgB₂ thin films fabricated by chemical vapor deposition on MgO (1 1 1) substrates. The rise time and full width at half-maximum of the photoresponse pulse signals were about 2.4 and 4 ns under the irradiation of a 248 nm laser pulse of 20 ns in duration through the MgO substrate at ambient temperature without any bias. Furthermore, the signal polarity is directly bound up with the laser illumination positions, while no photovoltage was observed when the MgO (1 1 1) single crystal was irradiated. The inner origin mechanism of the present positions-dependent photovoltaic response was discussed.     

WEAK QUANTUM FLUX CREEP AND STRONG PINNING IN THE NEW SUPERCONDUCTOR MgB2

The newly discovered superconductor MgB₂ has a transition temperature T_c of about 40 K, which is touching the upper line of that predicted by the phonon-mediated Bardeen--Cooper--Schrieffer (BCS) theory. It is interesting to investigate the flux creep in MgB₂ and compare it with other superconductors. We have measured the magnetization relaxation of MgB₂ sintered at high temperature and high pressure. It is found that the quantum tunnelling and the thermally activated flux creep are very weak, implying a strong pinning in this material.     

Pore formation in in situ processed MgB2 superconductors

MgB₂ bulks were prepared by an in situ process which utilizes the reaction between boron and magnesium powder. The reaction time was fixed at 0.5 h and the temperature was changed from 600 °C to 1000 °C. The density decrease due to pore formation and mass (mainly magnesium) loss during the formation reaction of MgB₂ was observed in all samples. In addition to the pore formation, a pellet expansion which can be explained by the outgrowth of MgB₂ grains was also observed. Two different mechanisms were adopted to explain the pore formation; Kirkendall pores formed at a temperature below the melting point (m.p.) of magnesium by a difference in the diffusivity between magnesium and boron, and the pores formed at a temperature above the m.p. by melting of magnesium and a capillary movement. The density, T_c and J_c results suggest that the current carrying capacity can be improved by a careful control of the process parameters regarding a pore evolution.     

The superconducting properties of Cu-doped MgB2 bulks prepared by a high-energy milling method

The Cu-doped MgB₂ bulks were prepared by a high-energy milling and subsequent sintering method. Compared to the pure and Cu-doped bulks prepared only by sintering, the critical current density (J_c) of the milled Cu-doped samples was improved with a slight decrease in critical transition temperature (T_c). Using the phase analysis and microstructure observation, it has been found that the MgB₂ grains in the milled Cu-doped sample was refined with the high-energy milling and thus provided more grain boundary pinning, which was contributed to the improvement of J_c at high field.