复合胶体喷雾自组装Sr_2Al_2SiO_7∶Eu~(2 )荧光体及其发光特性

采用AlOOH/Sr(NO3)2/SiO2/Eu复合胶体喷雾工艺制备了D50=3.83μm球形Sr2Al2SiO7∶Eu2 梯次结构荧光粉。复合胶体喷雾过程形成雾滴,雾滴中纳米粒子组分在表面张力及毛细管力作用下自组装形成梯次结构干凝胶粉。干凝胶粉经1300℃灼烧得到梯次结构Sr2Al2SiO7∶Eu2 荧光粉。X射线衍射(XRD)分析及晶格常量计算结果表明,Eu2 离子部分取代Sr2 格位进入Sr2Al2SiO7晶格。Sr2Al2SiO7∶Eu2 荧光体激发谱由峰值位于326 nm附近的宽带构成,属于Eu2 的4f→5d跃迁吸收带;发射光谱峰值波长位于约500 nm处,属于Eu2 离子4f65d到4f7跃迁导致的宽带发射。     

Bi3+掺杂对Sr2MgSi2O7:Eu2+荧光粉的结构及发光性能的影响

采用溶胶-凝胶法在还原气氛下制备了Sr2MgSi2O7∶Eu2+,xBi3+(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征.结果发现:单掺杂Bi3+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi3+的3p1→1S0电子能级跃迁而造成的;单掺杂Eu2+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu2+的4f65d3→4f7跃迁而引起的.当Bi3+离子掺杂到Sr2MgSi2O7∶Eu2样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi3离子样品的1.9倍.     

Sr3SiO5:Eu2+和Sr3SiO5:Eu2+, Dy3+荧光粉的黄色长余辉性质

用高温固相法制备了Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉.在紫外光辐照后, Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉具有明亮的黄色长余辉,源于Eu2 的4f65d - 4f7的跃迁.紫外光激发停止后,Sr3SiO5:Eu2 的余辉时间是4 h以上.余辉衰减曲线和热释光曲线说明了引入Dy3 离子可以产生大量的深陷阱和浅陷阱.产生的深陷阱使余辉时间延长到6 h以上.由热释发光曲线,根据热释光的通用级公式拟合了陷阱深度.Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉是有应用前景的黄色长余辉材料.     

Sr3SiO5∶Eu^2＋和Sr3SiO5∶Eu^2＋,Dy^3＋荧光粉的黄色长余辉性质

用高温固相法制备了Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉。在紫外光辐照后,Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉具有明亮的黄色长余辉,源于Eu2 的4f65d-4f7的跃迁。紫外光激发停止后,Sr3SiO5∶Eu2 的余辉时间是4 h以上。余辉衰减曲线和热释光曲线说明了引入Dy3 离子可以产生大量的深陷阱和浅陷阱。产生的深陷阱使余辉时间延长到6 h以上。由热释发光曲线,根据热释光的通用级公式拟合了陷阱深度。Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉是有应用前景的黄色长余辉材料。     

LED用荧光粉Sr（S1-xSex）：Eu^2＋的合成和光谱性质研究

采用高温固相法合成了Sr(S1-xSex)系列硫属化合物掺Eu2 荧光粉.XRD表明荧光粉的组成为单相,而且体系Sr(Sl-xSex):0.005Eu2 中晶胞参数随着组成的变化呈现良好的线性关系,遵守韦加定律.漫反射光谱与激发光谱吻合,说明荧光粉吸收的能量能够有效地激发发光中心而发光,激发光谱中较低能量区域覆盖了400～500 nm的光谱范围,与蓝光LED芯片的发射光匹配.发射光谱呈现的是Eu2 离子的5d→4f特征跃迁发射带,当x由0增加到1.0的过程中,发射峰值波长由617 nm逐渐蓝移到571 nm.不同基质中掺杂的Eu2 离子的荧光寿命均为微秒数量级,与Eu2 离子的4f65d1→4f7跃迁相符合.将荧光粉封装在发蓝色光(λ=460 nm)的GaN芯片上制作了LED器件,测量了器件的发光强度、色纯度和色坐标等参数.Sr(S1-xSex):Eu2 系列硫属化合物掺铕荧光粉能够有效地被GaN芯片发出的蓝色光激发,发出从橙色到红色的可见光,是一类较好的LED用荧光粉.     

白光LED用Ca7（SiO4）2Cl6∶Eu2+荧光粉的光谱性能研究

通过高温固相法制备了用于紫外激发白光LED的蓝绿色Ca7(SiO4)2Cl6∶Eu2+荧光粉,并对样品进行了XRD分析和发光性能测试。结果表明,合成的样品为单相Ca7(SiO4)2Cl6;在紫外光激发下,样品的发射谱包括418和502nm两个发射峰。分别监测这两个发射峰,得到了峰值位于290和360nm处的两个宽带激发谱,说明Eu2+离子在基质晶格中可能占有两个不同的格位。研究了Eu2+离子浓度对发光强度的影响,最佳掺杂浓度为0.75mol%。结果表明该荧光粉是一种较好的蓝绿色发光材料。     

LED用荧光粉Sr(S_(1-x)Se_x)∶Eu~(2 )的合成和光谱性质研究

采用高温固相法合成了Sr(S1-xSex)系列硫属化合物掺Eu2 荧光粉。XRD表明荧光粉的组成为单相,而且体系Sr(S1-xSex)∶0.005Eu2 中晶胞参数随着组成的变化呈现良好的线性关系,遵守韦加定律。漫反射光谱与激发光谱吻合,说明荧光粉吸收的能量能够有效地激发发光中心而发光,激发光谱中较低能量区域覆盖了400~500nm的光谱范围,与蓝光LED芯片的发射光匹配。发射光谱呈现的是Eu2 离子的5d→4f特征跃迁发射带,当x由0增加到1.0的过程中,发射峰值波长由617nm逐渐蓝移到571nm。不同基质中掺杂的Eu2 离子的荧光寿命均为微秒数量级,与Eu2 离子的4f65d1→4f7跃迁相符合。将荧光粉封装在发蓝色光(λ=460nm)的GaN芯片上制作了LED器件,测量了器件的发光强度、色纯度和色坐标等参数。Sr(S1-xSex)∶Eu2 系列硫属化合物掺铕荧光粉能够有效地被GaN芯片发出的蓝色光激发,发出从橙色到红色的可见光,是一类较好的LED用荧光粉。     

Sr_2ZnSi_2O_7∶Eu~(3+)的低温合成与发光性能

以介孔二氧化硅MCM-41为硅源,采用低温水热反应与后续煅烧相结合的方法合成Sr2-xZnSi2O7∶xEu3+红色荧光粉。实验结果表明,150℃水热处理16 h后的反应产物含Sr2ZnSi2O7相,经后续950℃煅烧3h得到Sr2ZnSi2O7纯相。在392 nm近紫外光的有效激发下,Sr2-xZnSi2O7∶xEu3+荧光粉显示Eu3+离子的特征跃迁发射,以615 nm的5D0→7F2跃迁发射峰为最强。适量Eu3+的掺杂对Sr2ZnSi2O7相结构几乎没有影响,当Eu3+离子的掺杂量x=0.10时,荧光粉发光强度最大。     

(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu荧光粉的光谱研究及紫外激发色像图建立

采用高温固相法制备了新型(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu荧光粉,其中包括3个二元碱土离子配比系列和3个代表性三元碱土离子配比系列(Ba不变而Mg/Sr比连续变化、Mg/Sr比不变而Ba含量连续变化)共计6个系列,并研究其光谱性能(激发谱和发射谱)、紫外(254和365 nm)发光照相记录及CIE值对应色像。借鉴三元相图的建立思路,由这些二元和代表性三元数据推导三元色像图,用于新型荧光粉的系统开发。所制备的荧光粉系列包括:Mg2SiO4-Sr2SiO4,Ba2SiO4-Sr2SiO4,Mg2SiO4-Ba2SiO4,Ba原子比含量为0.2(Mg/Sr原子比连续变化),Ba原子比含量为0.6(Mg/Sr原子比连续变化),Mg/Sr原子比为1/4(Ba原子比含量连续变化系列)。其对应的254 nm激发下光谱性能、发光照相记录、和CIE色像分析表明:Eu离子可以三价和二价形式存在于(Mg1-x-yBaxSry)2SiO4中;二元系列中(Mg1-xBax)2SiO4和(Ba1-ySry)2SiO4基体中随着Ba原子比的增加荧光粉逐渐由红(对应Eu3+5D0→7F1和5D0→7F2电子跃迁窄带发射)变绿(对应Eu2+4fn-15d→4fn电子跃迁发射宽带发射)且前者变化的更快;二元系列中(Mg1-ySry)2SiO4系列为红色荧光粉,且随着Sr含量增加红色发光增大;三元系列中(Bax(Mg0.2Sr0.8)1-x)2SiO4(Mg/Sr=1/4)随着Ba离子量增加荧光粉也逐渐由红变绿,其变化速度介于Mg/Sr比等于0(即Ba2SiO4-Sr2SiO4系列)和Mg/Sr比等于∝(即Ba2SiO4-Mg2SiO4系列);三元系列中(Ba0.2SryMg0.8-y)1.95SiO4为红色荧光粉,而(Ba0.6SryMg0.4-y)2SiO4随着Mg/Sr原子比增加逐渐由红转蓝绿光。365 nm激发下荧光发射的变化规律与254 nm激发下大体一致,但是同一样品在365 nm激发下其绿光波段发射要比254 nm激发要强且其红光波段发射要比254nm激发要弱,故(Mg1-xBax)2SiO4,(Ba1-ySry)2SiO4,(Bax(Mg0.2Sr0.8)1-x)2中对应的由红变绿时Ba含量分别为40at%,60at%,60at%(254 nm激发下60at%,80at%,70at%)且(Ba0.6SryMg0.4-y)2SiO4中由红变绿的Mg/Sr比为1/4(254 nm激发下为2/3)。据此建立Eu掺杂Ba2SiO4-Mg2SiO4-Sr2SiO4紫外激发色像图。借由色像图可知(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu荧光粉紫外激发下发射光变化规律,即基体组分靠近Ba2SiO4端发射绿色而靠近Mg2SiO4或Sr2SiO4端发射红色,Mg/Sr比越大随着Ba原子的增加荧光粉的由红转绿的速度越快;同一样品在365 nm激发下其绿光波段发射要比254 nm激发要强且其红光波段发射要比254 nm激发要弱,(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu荧光粉中当Ba>80at%,Mg>90at%(或Sr>80at%)荧光粉可分别用作高效绿色、红色荧光粉;此外,当组分为(Mg0.8Sr0.2)1.95SiO4∶0.05Eu,(Ba0.8Mg0.16Sr0.04)1.95SiO4∶0.05Eu是紫外激发下(254和365 nm)最好的红色和绿色荧光粉。     

白光LED用单基质荧光粉BaSrMg( PO4)2∶Eu2+的制备及发光性能研究

采用高温固相反应法在1 200℃下制备了 Eu2+激活的BaSrMg( PO4)2高亮度白光荧光粉,并对其晶体结构和发光性能进行了研究.荧光光谱研究表明该荧光粉的发射光谱由两个谱带组成,其中心分别位于424和585 nm处,归结为Eu2+分别占据了基质中Sr2+,Ba2+格位而导致的4f 65d1→4f7电子跃迁.两个发射峰的激发光谱均分布在250～400nm的波长范围内,峰值位于360nm左右.表明该荧光粉可被INGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED单一基质白光荧光粉.深入考察了基质中不同Ba和Sr的比例、Eu2+掺杂浓度对荧光粉发光强度和色坐标的影响,并可通过改变上述参数实现该荧光粉的色坐标可调性,在最优条件下该荧光粉发光已在白光区域.考察了Eu2+掺杂浓度对荧光粉量子效率的影响,为荧光粉的最佳掺杂浓度提供理论依据.     

Magnetic ordering in HoRu2Si2, HoRh2Si2, TbRh2Si2 and TbIr2Si2 by neutron diffraction

Neutron diffraction study of polycrystalline HoRu₂Si₂, HoRh₂Si₂, TbRh₂Si₂, and TbIr₂Si₂ was performed in the temperature range between 4.2 and 300 K. For HoRu₂Si₂ the magnetic spin alignment of a linear transverse wave mode below the Néel temperature 19 K is observed. This static moment wave is propagating along the b-axis with k=(0, 0.2, 0) and is polarized in the c-axis. The root-mean-square and maximum saturation moments per Ho atom are 9.26 and 13.09μ_B, respectively. HoRh₂Si₂, TbRh₂Si₂ an TbIr₂Si₂ are simple collinear antiferromagnets of +-+- type with Néel temperatures of (27±1), (98±2) and (72±3) K, respectively. For TbRh₂Si₂ and TbIr₂Si₂ magnetic moments are localized on RE ions only and are aligned along the tetragonal axis, while for HoRh₂Si₂ they form an angle ø = (28±3)°.     

μ+SR study of LaNi2As2, URh2Si2 and CeRh2Si2

Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh₂Si₂ and CeRh₂Si₂. As the magnetic structure of these compounds is well known, these measurements can help to characterise their magnetic properties probed by μSR and to understand the μSR results of the heavy fermion compounds of the same crystallographic family. Our measurements show that the muons occupy two different crystallographic sites. The spectra of URh₂Si₂ and CeRh₂Si₂ in the magnetically ordered states are very different, probably reflecting their different magnetic structures. The spectra obtained on CeRh₂Si₂ are similar to the published spectra of the heavy fermion compound CeCu_2.1 Si₂. Muon spin rotation measurements on LaNi₂As₂ indicate that the muon is diffusing at 150 K.     

13C-selective IRMPD of CBr2F2/Cl2 and CCl2F2/Br2 systems

The CO₂ TEA laser irradiation of CBr₂F₂ in the presence of Cl₂ yielded ¹³C-enriched CBrClF₂ and ¹³C-enriched CCl₂F₂ under selected experimental conditions. As the photolysis proceeded, the ¹³C concentration of CBrClF₂ decreased gradually and that of CCl₂F₂ increased up to 90% or higher. These results can be explained by the mechanism involving the secondary ¹³C-selective IRMPD of the primary product CBrClF₂. On the other hand, the carbon-containing product for a CCl₂F₂/Br₂ system was only CBrClF₂; the further IRMPD of which probably regenerated CBrClF₂ in the presence of Br₂. The decomposition probabilities of ¹²C- and ¹³C-containing molecules in both systems were measured as functions of laser line, laser fluence, and reactant pressures.     

Polar optic phonons in Hg2Cl2 and Hg2Br2

Far infrared (30–430 cm^?1) reflectivity measurements of Hg₂Cl₂ and Hg₂Br₂ single crystals have been performed in polarized light. The spectra, which are in agreement with group-theoretical predictions, were analyzed by the oscillator fitting procedure and Kramers-Kronig method. The results are compared with the existing data from other measurements and the large anisotropy of polar modes is briefly discussed. The polarization vectors of all long-wavelength symmetry modes were determined group-theoretically.     

Magnetostriction of SmMn2Ge2 and GdMn2Ge2 intermetallic compounds

Longitudinal and transverse magnetostrictions of polycrystalline samples of intermetallic compounds RMn₂Ge₂ (R=Sm or Gd) are measured in pulsed magnetic fields up to 250 kOe. It is found that linear magnetostrictive strains of about 10^?3 arise in a temperature range in which the magnetic field causes a change in the magnetic state of a manganese magnetic subsystem. The results obtained are described within the model of a two-sublattice ferrimagnet with a negative exchange interaction in the manganese subsystem in terms of a strong dependence of this interaction on interatomic distances.     

Superconductivity in LaPd_2Bi_2 with CaBe_2Ge_2-type structure

正Since the discovery of superconductivity in LaFeAsO_(1-x)F_x,the high-T_c iron-based superconductors have been extensively studied from both experimental and theoretical viewpoints [1-8]. However, the mechanism of the unconventional superconductivity is still to be resolved. To     

Structural,magnetic and neutron diffraction studies on TbFe2-TbAl2, TbCo2-TbAl2 and HoCo2-HoAl2

Both pseudobinary systems exhibit large homogeneous regions of cubic and hexagonal Laves phases. Ordering tendencies on crystallographic sites between Al and the transition metals are observed in the hexagonal type.Electron transfer to the transition metals quenches their moments so that they become nonmagnetic at high Al concentrations. The peculiarities in the mechanism of magnetization which appear in rare earth dialuminides when Al is replaced by a transition metal have been studied in detail at cryogenic temperatures.The first replacement of Al results in a decrease in saturation moment. Neutron diffraction verifies the low ordered rare earth sublattice moments and reveals the ‘lost part’ as a disordered component. Considerable magnetic hardness develops in certain regions of concentration often connected with spontaneous increases in magnetization with field. All available evidence suggests the presence of unusual domain wall effects to be responsible for this effect. High remanences develop in both the hexagonal and in the cubic structures in the intermediate region. The development of disordered magnetic components is connected either with the disorder on crystallographic sites or changes in the free electron concentration.