Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show ``binding' and ``antibinding' properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler--London method.     

Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dots

We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers.     

Optical study of single InAs on In0.12Ga0.88As self-assembled quantum dots: biexciton binding energy dependence on the dots size

Single self-assembled InAs quantum dots embedded in a In_0.12Ga_0.88As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power of the single quantum dot photoluminescence has been used to identify the emission of the biexciton complex. The biexciton binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data is compared with experimental results available in the literature for InAs quantum dots. PACS 78.67.Hc; 73.21.La; 78.55.Cr     

Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots

In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height. Received 15 May 2001 / Received in final form 14 May 2002 Published online 13 August 2002     

Coulomb effects in semiconductor quantum dots

This paper presents a new model for the Internet graph (AS graph) based on the concept of heuristic trade-off optimization, introduced by Fabrikant, Koutsoupias and Papadimitriou in [5] to grow a random tree with a heavily tailed degree distribution. We propose here a generalization of this approach to generate a general graph, as a candidate for modeling the Internet. We present the results of our simulations and an analysis of the standard parameters measured in our model, compared with measurements from the physical Internet graph.Received: 9 February 2004, Published online: 14 May 2004PACS: 89.75.-k Complex systems - 89.75.Hc Networks and genealogical trees - 89.75.Da Systems obeying scaling laws - 89.75.Fb Structures and organization in complex systems - 89.65.Gh Economics; econophysics, financial markets, business and managementLRI: http: //www.lri.fr/~ihameli; CNRS, LIP, ENS Lyon : http: //www.ens-lyon.fr/~nschaban     

Excitonic polarons in semiconductor quantum dots

The discretization of the electronic spectrum in semiconductor quantum dots implies a strong coupling behavior between the optical phonons and the electron-hole pairs, despite the fact that a pair is electrically neutral. The excitonic polarons strongly modify the optical spectra. In particular, the ground excitonic polaron contains one or two phonon components, which leads to the existence of phonon replicas in the luminescence. The population and coherence decay times of the optical transition associated with the ground excitonic polaron are calculated.     

半导体量子点中的杂化量子比特

文章介绍了半导体新型量子比特——杂化量子比特。通过与半导体量子点中自旋量子比特和电荷量子比特进行比较,阐述了杂化量子比特兼具长相干与快操控的优点。在总结了杂化量子比特发展与现状的基础上,进一步简单介绍了中国科学技术大学中国科学院量子信息重点实验室在改进型杂化量子比特方面的工作成果。     

Optical breathers in semiconductor quantum dots

A theory of resonant optical breathers in the presence of single and biexciton transitions in an ensemble of inhomogeneously broadened semiconductor quantum dots is constructed. Explicit analytical expressions for the breather shape and parameters for experimental investigations are proposed.     

Vector solitons in semiconductor quantum dots

A theory of an optical vector soliton of self-induced transparency in an ensemble of semiconductor quantum dots is considered. By using the perturbative reduction method, the system of the Maxwell–Liouville equations is reduced to the two-component coupled nonlinear Schrödinger equations. It is shown that a distribution of transition dipole moments of the quantum dots and phase modulation changes significantly the pulse parameters. The shape of the optical two-component vector soliton with the sum and difference of the frequencies in the region of the carrier frequency is presented. The vector soliton can be reduced to the breather solution of self-induced transparency with a different profile. Explicit analytical expressions in the presence of single-excitonic and biexcitonic transitions for the optical vector soliton are obtained with realistic parameters which can be reached in current experiments.     

Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots

The problem of excitonic and biexcitonic binding is studied in the system of parabolic coordinates for a lens-shaped quantum box. The exciton wavefunction is expanded in terms of electron–hole configurations made from electron and hole single-particle states. Configuration interaction method and perturbative calculations are used to study the competition between confinement and correlation effects. Biexcitonic binding energy is calculated in the strong confinement regime and a comparison to the case of a spherical box is made. Absorption spectra with and without correlation effects are computed for InAs/InP quantum dots. Excitonic binding energy and enhancement factor are estimated to be equal to about 20 meV and 1.5, respectively. The excitonic absorption is finally studied in the presence of a uniform vertical electric field. A weak vertical Stark effect is predicted for lens-shaped quantum box described within this model.     

Four-wave mixing in coupled semiconductor quantum dots

We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions, a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.     

Spin relaxation quenching in semiconductor quantum dots

We have studied the spin dynamics in self-organized InAs/GaAs quantum dots by time-resolved photoluminescence performed under strictly resonant excitation. At low temperature, we observe strictly no decay of both the linear and the circular luminescence polarization. This demonstrates that the carrier spins are totally frozen on the exciton lifetime scale.     

Nuclear spin switch in semiconductor quantum dots

We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 T can be generated by varying the pumping intensity. The excitation power threshold for such a nuclear spin "switch" is found to depend on both the external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of the spin transfer from electrons to the nuclei of the dot.     

Spin manipulation in semiconductor quantum dots qubit

Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits(qubits). The natural two-energy level of spin states provides a path toward quantum information processing. In particular, the experimental implementation of spin control with high fidelity provides the possibility of realizing quantum computing. In this review, we will discuss the basic elements of spin qubits in semiconductor quantum dots and summarize some important experiments that have demonstrated the direct manipulation of spin states with an applied electric field and/or magnetic field. The results of recent experiments on spin qubits reveal a bright future for quantum information processing.     

Exciton-phonon interaction in cylindrical semiconductor quantum dots

The exciton-longitudinal optical phonon interaction is theoretically investigated for the case of polar semiconductor cylindrical quantum dots embedded in semiconductor matrix. The theory is developed within the dielectric continuum model considering the Fröhlich interaction between electrons and confined bulk longitudinal optical phonons for a configurational interaction model of quantum dot. Representative longitudinal optical phonon mode for the exciton-phonon interaction is predicted for cylindrical InAs/GaAs quantum dots.     

Charged magneto-exciton states in semiconductor quantum dots

By embedding a layer of self-assembled quantum dots into a field-effect structure, we are able to control the exciton charge in a single dot. We present the results of photoluminescence experiments as a function of both charge and magnetic field. The results demonstrate a hierarchy of energy scales determined by quantization, the direct Coulomb interaction, the electron–electron exchange interaction, and the electron–hole exchange interaction. For excitons up to the triply charged exciton, the behavior can be understood from a model assuming discrete levels within the quantum dot. For the triply charged exciton, this is no longer the case. In a magnetic field, we discover a coherent interaction with the continuum states, the Landau levels associated with the wetting layer.     

Exciton relaxation in self-assembled semiconductor quantum dots

The present study focuses on the effect of excited states on the exciton–polaron spectrum for self-assembled InAs/GaAs semiconductor quantum dots. The analytical model takes into account the Coulomb interactions between the electron and the hole as well as, each carrier, the coupling with the longitudinal optical phonon field. Furthermore, the key role played by the exciton continuum in the dot spectrum is also introduced. Such an approach is well fitted to analyze recent experimental findings about single-dot spectroscopy and allows peaks assignment, line width estimation, relaxation time evaluation, etc., necessary steps toward an understanding of the internal dynamics of quantum dots.