Chemisorption of CO on Ir(100) studied by photoemission

Chemisorption of cabon monoxide on a reconstructed Ir(100) surface has been studied by means of LEED and photoemission. In the photoemission spectrum, apart from a low lying peak due to the 4σ-orbital of CO, there is also a broad bump divided by a clear dip. The upper part of this double peak is assigned to the 5σ orbital and the lower part to the 1 π orbital of CO.     

Chemical reactions of chlorine on a vicinal Si(100) surface studied by ESDIAD

The reaction of Cl₂ on a vicinal Si(100) surface has been studied by ESDIAD. This type of surface possesses two types of sites: pairs of dangling bonds on Si---Si terrace dimers, and single dangling bonds on the 2-atom layer high steps. The reactivity of these two sites is compared. For low coverages the step dangling bonds are identified as the preferred Cl bonding site after 673 K-annealing. Upon higher temperature annealing and SiCl₂(g) desorption, the terrace-site Cl species are depleted more rapidly than the step-site Cl species. Extensive isothermal etching under a continuous Cl₂ flux at 800 K is found to produce a disordered surface structure. Heating to 1123 K causes a reordering of the surface.     

Image state linewidth on Ag(100) studied by two-photon photoemission spectroscopy

The linewidth of the first image state on Ag(100) was studied using two-photon photoemission spectroscopy. The width was found to be 35±9 meV in agreement with a recent time-resolved study (Schoenlein et al.: Phys. Rev. Lett.61, 2596 (1988)) but somewhat larger than the theoretical value of 10–20 meV (Echenique et al.: Phys. Rev. B35, 4529 (1987)).     

Photodesorption and photofragmentation of disilane adsorbed on a hydrogen terminated Si(100) surface

The photochemical mechanisms leading to the desorption and fragmentation of Si₂H₆ adsorbed on a hydrogen terminated Si(100) surface have been explored by recording the time-of-flight distributions of products escaping from the surface and by using electron energy loss spectroscopy to probe possible electronic excitations. Photodesorption of intact Si₂H₆ involves hot electrons that lose energy and move to the conduction band edge before initiating desorption. When the wavelength of the incident light is 193 nm, Si₂H₆ fragments give mostly Si, SiH₂, H₂ and SiH₄, but this pathway is quenched at longer wavelengths. This is consistent with direct excitation, but we also show that a negative ion resonance is accessible to substrate electrons that have been excited by 193 nm light.     

The valence band structure of HfN0.93 (100) studied by angle-resolved photoemission

The valence band structure of a HfN_0.93 (100) crystal has been investigated utilizing angle-resolved photoemission and HeI, NeI and ArI radiation. The experimental data are compared with calculated spectra and calculated direct transitions for stoichiometric HfN. The comparison shows that most of the structures in the recorded spectra can be identified as originating from bulk band transitions. The dispersions of the experimental peaks are predicted reasonably well theoretically, using final states approximated by free-electron bands. However, the experimental peaks are in general found somewhat deeper below the Fermi level than the calculated positions.     

Amorphization of Si (100) under O implantation studied by spectroscopic ellipsometry

The amorphization of crystalline Si (100) under 125 keV O⁺ ion implantation is investigated in the fluence range 1×10¹⁴ ions/cm² to 1×10¹⁶ ions/cm². The microstructure of the O⁺ implanted Si is modeled from ellipsometric data using a two phase, multilayer model within Bruggeman effective medium approximation (BEMA). The transition from the crystalline to the amorphous phase is found to be smooth and progressive. From a detailed analysis of the moments of the dielectric spectra and laser Raman spectroscopy, we infer that the amorphization occurs through a progressive disruption of long-range order caused by the overlap of amorphous nanozones. The dielectric spectrum of the fully amorphous phase is characterized using the Forouhi-Bloomer interband model.     

Application of high-energy synchrotron-radiation XPS to determine the thickness of SiO2 thin films on Si(100)

The escape depth of photoelectrons depends on their kinetic energy. We apply this relationship to measure film thicknesses from X-ray photoelectron spectroscopy (XPS) measurements with tunable-energy synchrotron radiation (SR). For this purpose, a “high-energy SR-XPS” instrument has been constructed and used to characterize thermally oxidized thin films on Si(100) single crystals. In order to observe photoelectrons emitted from deeper regions than with conventional XPS, Si 1s photoelectrons with an energy up to 4000 eV were measured with X-ray energies up to 5800 eV. The oxide thickness was estimated from measurements of the relative Si intensities from the oxide and the substrate at various photon energies. Our results suggest that the SR-XPS system is useful for measuring the thickness of thin films.     

Thermal desorption of surface phosphorus on Si(100) surfaces

Thermal desorption of phosphorus on Si(100) surfaces has been investigated by varying the phosphorus coverage from zero to one monolayer (ML). The reaction path of phosphorus desorption is complicated and strongly dependent upon the phosphorus coverage. In the thermal desorption spectra, there are three apparent desorption peaks at 750, 850 and 1000°C. The entire phosphorus atoms on the surface desorb as P₂ through recombinative reactions irrespective of the desorption temperature and the coverage. In the lower coverages below 0.2 ML, the thermal desorption spectra are characterized by a single peak at 900°C which is considered to be the desorption from Si---P heterodimers. At higher coverages exceeding 0.2 ML, it is considered that three desorption schemes from P---P, Si---P dimers and defects coexist in the reaction stage.     

Photoinduced interface charging in multiphoton photoemission from ultrathin Ag films on Si(100)

The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole. PACS 79.60.Bm; 79.60.-i; 82.50.Nd, 73.50.-h     

Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

A high resolution core-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2×1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2×n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested.