Self-organized hierarchical ZnS/SiO(2) nanowire heterostructures

Novel hierarchical heterostructures formed by wrapping ZnS nanowires with highly dense SiO(2) nanowires were successfully synthesized by a vapor-liquid-solid process. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. Studies indicate that a typical hierarchical ZnS/SiO(2) heterostructure consists of a single-crystalline ZnS nanowire (core) with diameter gradually decreasing from several hundred nanometers to 20 nm and adjacent amorphous SiO(2) nanowires (branches) with diameters of about 20 nm. A possible growth mechanism was also proposed for the growth of the hierarchical heterostructures.     

Hierarchical saw-like ZnO nanobelt/ZnS nanowire heterostructures induced by polar surfaces

Saw-like nanostructures composed of single-crystalline ZnO nanobelts and single-crystalline ZnS nanowires have been successfully synthesized by a vapor-solid process. Several techniques, including scanning electron microscope, transmission electron microscopy, and photoluminescence spectroscopy, were used to investigate the structures, morphology, and photoluminescence properties of the products. Due to the similar crystal habits of wurtzite ZnO and ZnS with chemically active Zn-terminated (0001) and chemically inactive O-terminated (or S-terminated) (000) polar surfaces, hierarchical saw-like nanostructures were considered to be formed by the initiation of a chemically active Zn-terminated ZnO (0001) polar surface. Photoluminescence properties of the heterostructures, different from pure ZnO nanobelts or ZnS nanowires, were also studied at room temperature.     

Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory.     

Growth of single-crystalline Ni and Co nanowires via electrochemical deposition and their magnetic properties

Single-crystalline Ni nanowires have been successfully fabricated with anodic aluminum oxide as template by electrodeposition. Structural characterization (X-ray diffraction, XRD, and high-resolution transmission electron microscopy, HRTEM) shows that the single-crystalline Ni nanowire has a preferred orientation along the [220] direction. The effects of electrochemical deposition conditions on the structure of Ni nanowires are systematically studied to investigate the growth mechanism. Possible reasons for the growth of the single-crystalline Ni nanowires were discussed on the basis of electrochemistry and thermodynamics. These single-crystalline Ni nanowires have exhibited excellent magnetic properties (large anisotropy, large coercivity, and high remanence). By a similar process, single-crystalline Co nanowires with hexagonal close-packed (hcp) structure were achieved, also having large anisotropy, large coercivity (1.8 kOe), and high remanence ratio (80.8%).     

Solvothermal synthesis and characterization of uniform CdS nanowires in high yield

Large-scale CdS nanowires with uniform diameter and high aspect ratios were synthesized using a simple solvothermal route that employed CdCl₂ and S powder as starting materials, ethylenediamine (en) as the solvent. X-ray diffraction (XRD) pattern and transmission electron microscopy (TEM) images show that the products are hexagonal structure CdS nanowires with diameter of 40 nm and length up to 10 μm. Selected area electron diffraction (SAED) and high resolution TEM (HRTEM) studies indicate the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by optical absorption spectra and photoluminescence spectra. Based on the results of contrastive experiments, it is found that the sulfur source and the solvent play significant roles in the formation of uniform nanowires. A possible formation mechanism of nanowires is discussed.     

Growth of InP nanostructures via reaction of indium droplets with phosphide ions: synthesis of InP quantum rods and InP-TiO2 composites

InP quantum rods were synthesized via the reaction of monodispersed colloidal indium droplets with phosphide ions. In(0) droplets, which do not act as a catalyst but rather a reactant, are completely consumed. The excess electrons that are produced in this reaction are most likely transferred to an oxide layer at the indium surface. For the synthesis of InP quantum rods with a narrow size distribution, a narrow size distribution of In(0) particles is also required because each indium droplet serves as a template to strictly limit the lateral growth of individual InP nanocrystals. Free-standing quantum rods, 60, 120, or 150 A in diameter, with aspect ratios of 1.6-3.5, and without the residual metallic catalyst at the rod tip, were synthesized from the diluted transparent solution of metallic indium particles. The same approach was used to synthesize InAs quantum rods. A photoactive InP-TiO(2) composite was also prepared by the same chemical procedure; InP nanocrystals grow as well-defined spherical or slightly elongated shapes on the TiO(2) surface.     

Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires.

A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.     

Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures

Single-crystalline Ga-doped SnO2 nanowires and SnO2:Ga2O3 heterogeneous microcombs were synthesized by a simple one-step thermal evaporation and condensation method. They were characterized by means of X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). FE-SEM images showed that the products consisted of nanowires and microcombs that represent a novel morphology. XRD, SAED and EDS indicated that they were single-crystalline tetragonal SnO2. The influence of experimental conditions on the morphologies of the products is discussed. The morphology of the product showed a ribbon-like stem and nanoribbon array aligned evenly along one or both side of the nanoribbon. It was found that many Ga2O3 nanoparticles deposited on the surface of the microcombs. The major core nanoribbon grew mainly along the 110 direction and the self-organized branching nanoribbons grew epitaxially along 1110 or 1110 orientation from the (110) plane of the stem. A growth process was proposed for interpreting the growth of these remarkable SnO2:Ga2O3 heterogeneous microcombs. Due to the heavy doping of Ga, the emission peak in photoluminescence spectra has red-shifted as well as broadened significantly.     

Synthesis and Characterization of SnO2 One-dimensional Nanostructures

Single-crystalline SnO2 nanowires have been successfully prepared in large scale on Au-coated silicon substrate by heating the mixture of self-made high-purity SnO2 powders and graphite powders at 900℃. Besides the line type nanowires some more features were observed. The products were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and Raman spectrum techniques. The results indicate that the tin dioxide nanowires have a rutile structure with diameters ranging from 30 to 120 nm and lengths up to several tens of micrometers. The possible mechanism of the growth and reaction for the nanowires was also discussed.     

重离子径迹模板法合成银纳米线

聚碳酸脂(PC)膜被高能重离子辐照后沿入射离子路径产生潜径迹, 把带有潜径迹的膜经紫外光敏化后置于NaOH 溶液中进行蚀刻, 通过选择蚀刻条件, 在PC 膜内得到直径从100 到500 nm 导通的核径迹孔. 以带有核径迹孔的PC 膜为模板, 用电化学沉积法制备出不同直径的银纳米线. 在特定的实验条件下(沉积电压25mV、电流密度1-2 mA·cm-2、温度50 益和电解液为0.1 mol·L-1的AgNO3溶液), 获得了沿[111]方向择优取向生长的具有单晶结构的银纳米线. 利用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)及选区电子衍射(SAED)等手段对银纳米线的形貌和晶体结构特征进行了表征.     

电子显微镜技术表征聚乙二醇包覆的银纳米线的显微结构特征

以缓慢的水热合成法制备聚乙二醇(PEG)包覆的银纳米线,并用电子显微镜对其微观形貌和结构进行了表征。PEG是一种对银表面呈弱亲和性的水溶性聚合物,它在银纳米线合成中既作为Ag+的还原剂,又作为银线的包覆剂。扫描电镜和透射电镜表征显示,这种银纳米线的直径为80～300 nm,长度大于100μm;并且其中一部分银纳米线首尾相接形成了闭合纳米线圈,是首例以化学法制取的金属闭合纳米线圈。闭合环状纳米线的形成进一步支持了金属纳米线的融合生长机制。透射电镜和选区电子衍射以及银纳米线横截面切片的透射电镜表征显示,这种PEG包覆的银纳米线具有轴对称的五重挛晶结构。银纳米线经过长时间的水热孵化而保持其五重挛晶结构,这一点与某些文献报道的情况有所不同,说明银纳米线结构及其演化具有一定的复杂性。     

Synthesis of high-purity GaP nanowires using a vapor deposition method

High-purity gallium phosphide (GaP) nanowires were successfully synthesized on the nickel monoxide (NiO) or the cobalt monoxide (CoO) catalyzed alumina substrate by a simple vapor deposition method. To synthesize the high-purity GaP nanowires, the mixture source of gallium (Ga) and GaP powder was directly vaporized in the range of 850–1000 °C for 60 min under argon ambient. The diameter of GaP nanowires was about 38–105 nm and the length was up to several hundreds of micrometers. The GaP nanowires have a single-crystalline zinc blend structure and reveal the core-shell structure, which consists of the GaP core and the GaPO₄/Ga₂O₃ outer layers. We demonstrate that the mixture of Ga/GaP is an ideal source for the high-yield GaP nanowires.     

Halide–Amine Co‐Passivated Indium Phosphide Colloidal Quantum Dots in Tetrahedral Shape

Wet chemical synthesis of covalent III‐V colloidal quantum dots (CQDs) has been challenging because of uncontrolled surfaces and a poor understanding of surface–ligand interactions. We report a simple acid‐free approach to synthesize highly crystalline indium phosphide CQDs in the unique tetrahedral shape by using tris(dimethylamino) phosphine and indium trichloride as the phosphorus and indium precursors, dissolved in oleylamine. Our chemical analyses indicate that both the oleylamine and chloride ligands participate in the stabilization of tetrahedral‐shaped InP CQDs covered with cation‐rich (111) facets. Based on density functional theory calculations, we propose that fractional dangling electrons of the In‐rich (111) surface could be completely passivated by three halide and one primary amine ligands per the (2×2) surface unit, satisfying the 8‐electron rule. This halide–amine co‐passivation strategy will benefit the synthesis of stable III‐V CQDs with controlled surfaces.     

Systematic investigation of the formation of 1D alpha-Si(3)N(4) nanostructures by using a thermal-decomposition/nitridation process

This article describes a simple thermal-decomposition/nitridation method for the large-scale synthesis of 1D alpha-Si(3)N(4) nanostructures, such as millimeter-scale microribbons, nanosaws, nanoribbons, and nanowires. These nanostructures are systematically investigated by checking the product deposited at different areas by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. Studies show that all these nanostructures have a single-crystalline nature and predominantely grow along the [011] direction. These 1D nanostructures are formed by thermal decomposition, followed by the nitridation of SiO.     

Aqueous-solution growth of GaP and InP nanowires: a general route to phosphide, oxide, sulfide, and tungstate nanowires

A general synthetic route has been developed for the growth of metal phosphide, oxide, sulfide, and tungstate nanowires in aqueous solution. In detail, cetyltrimethylammonium cations (CTA(+)) can be combined with anionic inorganic species along a co-condensation mechanism to form lamellar inorganic-surfactant intercalated mesostructures, which serve as both microreactors and reactants for the growth of nanowires. For example, GaP, InP, gamma-MnO(2), ZnO, SnS(2), ZnS, CdWO(4), and ZnWO(4) nanowires have been grown by this route. To the best of our knowledge, this is the first time that the synthesis of GaP and InP nanowires in aqueous solution has been achieved. This strategy is expected to extend to grow nanowires of other materials in solution or by vapor transport routes, since the nanowire growth of any inorganic materials can be realized by selecting an appropriate reaction and its corresponding lamellar inorganic-surfactant precursors.     

Preparation of single-crystalline NdVO4 nanorods, and their emissions in the ultraviolet and blue under ultraviolet excitation

This paper describes a facile sacrifical (NH4)0.5V2O5 nanowires approach to single-crystalline NdVO4 nanorods. The nanorods have a rectangular cross section of about 30 x 30 nm2 to 100 x 200 nm2, and length ranging from 400 to 700 nm. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) show that the nanorods grew respectively along the [312] and [101] direction on the (NH4)0.5V2O5 nanowires. Ultraviolet (362 nm) and blue (467 nm) emissions can be observed under excitation of 310 nm at room temperature, suggesting that the nanorods should be good candidates for fabricating UV and blue nanodevices.     

Depositional characteristics of metal coating on single-crystal TiO2 nanowires

Ultralong single-crystalline TiO(2) nanowires were prepared by a simple, low-cost solvothermal process. Silver nitrate, neodymium chloride, ceric nitrate, stannic chloride hydrate, and cadmium chloride were used as metal sources and deposited by reduction on the surface of TiO(2) nanowires. The composites were subsequently characterized by transmission electron microscopy, and their coverage was compared. The nature of the coatings on the TiO(2) nanowires varies from metal to metal. A novel approach on modified one-dimensional nanostructures with metal coating was developed, which has great potential applications in catalysts, sensors, and nanoscale devices.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

聚乙烯吡咯烷酮辅助的水热法合成形貌可控的银纳米结构

以不同平均分子质量的聚乙烯吡咯烷酮(PVP,通常用K值来表示PVP溶液相对粘度的特征值,粘度越大,PVP平均分子质量越大,平均分子质量为8000、40000、160000、360000的PVP分别标记为K17、K30、K60、K90)为表面活性剂,通过水热法合成了形貌和光学共振峰可控的银纳米结构.将反应体系加入到60 mL的不锈钢高压反应釜中,在一定的温度下加热数小时.我们在K17的水溶液中合成了尺寸均一的五重孪晶银纳米十面体.而在K30、K60和K90的乙二醇(EG)溶液中得到了纵横比随着PVP分子质量增大而增大的银纳米线.产物的形貌和微结构通过透射电镜(TEM)和场发射扫描电镜(FE-SEM)进行表征,表面等离子共振(SPR)吸收峰通过紫外-可见分光光度计进行测试,结果显示银纳米结构的表面等离子共振随着其形貌和尺寸的改变而发生变化.     

Vapor-solid growth of Sn nanowires: growth mechanism and superconductivity

A noncatalytic and template-free vapor transport process has been employed to prepare single-crystalline Sn nanowires with diameters of 10-20 nm. The growth of one-dimensional Sn nanowires follows the mechanism similar to the vapor-solid (V-S) mechanism. Two-dimensional square-shaped nanostructures were also found to form in the region of lower deposition temperatures. The rich morphology may be attributed to the competition in growth rate among different crystallographic planes. Structural characterization with high-resolution transmission electron microscopy showed that the nanowires and nanosquares grew in a preferential direction of [200]. The superconducting transition temperatures for Sn nanowires and Sn nanosquares were about 3.7 K, which was very close to that of bulk beta-Sn. Magnetization measurements showed that the critical magnetic fields for both Sn nanowires and Sn nanosquares increased significantly as compared to that of bulk Sn.