差分光学吸收光谱(DOAS)技术在烟气SO2监测中的应用

本文将差分光学吸收光谱(Differential Optical Absorption Spectroscopy,DOAS)技术中的浓度反演方法运用到烟气SO₂监测中.利用SO₂分子在300nm附近具有强吸收的特性,测量出烟气SO₂的吸收光谱,用DOAS方法反演出SO₂分子的浓度,消除了烟气中烟尘、水汽和其它成分的影响,使在线实时测量成为可能,在实验室内对几种SO₂分子浓度样气进行了测量和浓度反演.     

Ba2CuO2Cl2的高压合成及原位高压结构稳定性研究

 在高温高压下合成出了单相的Ba₂CuO₂Cl₂化合物,在高压下对该化合物晶体结构的稳定性进行了研究。结果表明,在实验测量的压力范围内,Ba₂CuO₂Cl₂化合物的晶体结构是稳定的,并且其压缩性表现出较强的各向异性,计算得到了Ba₂CuO₂Cl₂化合物的体弹模量和状态方程。     

固体电解质ZrO2薄膜气敏光学特性的研究

本文采用溶胶凝胶法制备了ZrO₂薄膜,并研究它在乙醇蒸汽和氨蒸汽中的透射光谱,发现当掺入适量的稳定剂后,其光学特性显著增大,光学透过率随乙醇蒸汽和氨蒸汽的浓度增大而单调上升,敏感波段扩展至整个可见光区域.其气敏光学特性的灵敏度、单调性、可重复性表明了该材料是一种有实用价值的气敏光纤传感器新材料.本文亦讨论了ZrO₂薄膜的气敏光学机理.     

高压高温下B2O3与Mg和Li3N的反应

 通过B₂O₃与Mg和Li₃N分别在不同温度压力条件下的反应，用X射线方法研究了生成物的物相。当采用Mg与B₂O₃为原料时，其产物是Mg₃B₂O₆；用Li₃N与B₂O₃反应时，产物中除了Li₃BO₃，还有立方氮化硼（cBN）生成。这表明，当原料中含有相同数量B₂O₃时，用Mg和Li₃N分别作触媒合成立方氮化硼，将得到不同的结果。     

色散SiO2/TiO2薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性

用特征矩阵法研究了由正常色散SiO₂/TiO₂薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性,并与无色散时的传输特性做了对比。结果表明,随序列项数的增加,相应的前一序列的透射谱中透射率较低的凹带逐渐变成禁带,禁带数增加;初始介质是低折射率的SiO₂薄膜时比高折射率的TiO₂薄膜时各序列的透射谱中的禁带数多,各禁带的宽度和中心波长基本相同;在总厚度一定的条件下,随SiO₂薄膜的厚度增大（TiO₂薄膜的厚度减小）,禁带的宽度减小,禁带的中心波长基本不变;随入射角增大,禁带的中心波长向短波方向移动,禁带宽度变小。在其它相同条件下,无色散时的最宽禁带和最宽禁带的中心波长比有色散时的最宽禁带和最宽禁带的中心波长都有增加。     

稀土焦绿石化合物R2Fe4/3W2/3O7的高温高压稳定性研究和X射线相分析

 本文利用X射线粉末衍射和位敏探测技术，研究了R₂Fe_4/3W_2/3O₇（R=Er、Yb、Dy）化合物经高温高压处理后的变化情况。在3.7 GPa，1 200 ℃条件下，六方相R₂Fe_4/3W_2/3O₇化合物按两种方式分解，而直接由R₂O₃，Fe₂O₃和WO₃原料出发，经上述同样的高温高压条件合成所得的产物与六方相高温高压分解产物相同，均为R₂WO₆、RFeO₃、WO₃和Fe₂O₃的多相聚合物。同时给出了R₂Fe_4/3W_2/3O₇六方相高温高压下的稳定区范围。     

压缩CO2中聚合物玻璃化转变温度的实验研究

 玻璃化转变温度（T_g）是聚合物重要的特性参数，压缩CO₂环境中聚合物的玻璃化转变温度的测定，更是超临界流体技术在聚合物科学领域中成功应用的前提条件。根据蠕变柔量实验原理，自建一套测定高压环境下玻璃化转变温度的实验装置。利用该装置对聚对苯二甲酸乙二醇酯（PET）、聚苯乙烯（PS）、聚氯乙烯（PVC）以及聚甲基丙烯酸甲酯（PMMA）在大气中及压缩CO₂环境中的T_g进行了测定。设定实验的平衡吸附温度为室温，平衡吸附压力范围分别为：PET，0~3.5 MPa；PS，0~11.0 MPa；PVC，0~9.0 MPa；PMMA，0~4.5 MPa。在大气中测定的结果与文献中的结果相吻合，表明所设计的实验方法及实验装置是可靠并有效的，可用于高压环境下聚合物的玻璃化转变温度的测定。从压缩CO₂中的聚合物T_g测定结果可以看出，CO₂对聚合物具有较明显的溶胀、增塑作用，可显著降低聚合物的T_g。     

高压对纳米ZnO和ZnO/SnO2复合材料的结构和发光性能的影响

 利用溶胶-凝胶法制备出了纳米晶ZnO与含有3%摩尔分数SnO₂的ZnO/SnO₂复合材料,在六面顶压机上对制备出的两种样品进行了室温下、6GPa的高压处理。采用X射线衍射（XRD）、透射电子显微镜（TEM）和光致荧光谱（PL）等方法,对高压处理前后样品的结构和发光性质进行了表征。结果表明：高压处理后回收到的纳米晶ZnO和ZnO/SnO₂复合材料的平均粒径分别减小5.9%和26.3%;高压处理后ZnO和ZnO/SnO₂复合材料光致发光谱的发光带强度都有所降低,但ZnO/SnO₂复合材料发光带强度降低幅度比纯ZnO小,对产生这些现象的原因进行了讨论。     

500 MHz LiNbO3 2×2光开关/调制器

本文描述一种采用铬-金电极的Ti:LiN_bO₃型2×2光开关/调制器。给出了该器件的设计参数,工艺条件,带单模尾纤的器件性能为:总插入损耗<8dB,开关电压<10V,串音<-15dB(λ=1.3μm)。本文讨论了器件的高频特性,测得器件的调制频率>500MHz。     

液态CO2高温高密度状态方程研究

 利用二级轻气炮作冲击加载手段，采用自己建立的低温靶，比较系统地研究了液态CO₂的冲击压缩行为。在20～60 GPa压力区获得六个新的Hugoniot数据点。根据这些实验点，采用液体统计力学理论和化学平衡方法，重新优化获得一组CO₂－CO₂，CO₂－O，CO－O作用势参数。分析表明，引起体系在25 GPa以上区域冲击软化现象的主要机制是CO₂离解反应，CO₂—→CO+O。     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

CO2 laser assisted removal of UO2 and ThO2 particulates from metal surface

Pulsed laser assisted removal of uranium dioxide and thorium dioxide particulates from stainless steel surface have been studied using a TEA CO₂ laser. Decontamination efficiency is measured as a function of laser fluence and number of pulses. Threshold fluence for the removal of UO₂ particulates has been found to be lower than that required for the removal ThO₂ particulates. Usage of a ZnSe substrate, that is transparent to the laser wavelength used here, enabled us to decouple the cleaning effect arising out of absorption in the particulates from that in the substrate and has contributed towards understanding the mechanism responsible for cleaning. The experimental observations are also corroborated by simple theoretical calculations.     

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

La₂O₃ grown by atomic layer deposition (ALD) and thermally grown GeO₂ are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO₂ dielectrics, grown by ALD at 250 °C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO₂ based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO₂. As a consequence the formation of a ZrGeO_x compound inside the ZrO₂ matrix and a decline of the interfacial GeO₂ are observed. The La₂O₃ passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy.     

SnO2/TiO2 mixed oxide particles synthesized in doped premixed H2/O2/Ar flames

SnO₂/TiO₂ mixed oxides with primary particle size ranging between 5 nm d_p 12 nm were synthesized by doping a H₂/O₂/Ar flame with Sn(CH₃)₄ and Ti(OC₃H₇)₄ co-currently. The effects of “flow coordinate,” concentration and flame configurations were investigated with respect to particle size and morphology of the generated mixed oxides. In situ characterization of the mixed oxides was performed using the particle mass spectrometer (PMS), while XRD, TEM, BET and UV–Vis were performed ex situ. Results obtained showed that primary particle size of mixed oxides can be controlled by varying experimental parameters. The mixed oxides have interesting properties compared to those of the pure oxides of TiO₂ and SnO₂, which were also synthesized in flames earlier. Band gap tuning opportunities are possible using mixed oxides.     

Optical properties of Mn-activated Na2SnF6 and Cs2SnF6 red phosphors

Alkaline hexafluorostantanate red phosphors Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺ are synthesized by chemical reaction in HF/NaMnO₄ (CsMnO₄)/H₂O₂/H₂O mixed solutions immersed with tin metal. X-ray diffraction patterns suggest that the synthesized phosphors have a tetragonal symmetry with the space group D_4h¹⁴ (Na₂SnF₆:Mn⁴⁺) and a trigonal symmetry with the space group D_3d³ (Cs₂SnF₆:Mn⁴⁺). Photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and the Raman scattering techniques are used to investigate the optical properties of the phosphors. The Franck-Condon analysis of the PLE data yields the Mn⁴⁺-related optical transitions to occur at ∼2.39 and ∼2.38 eV (⁴A_2g→⁴T_2g) and at ∼2.83 and ∼2.76 eV (⁴A_2g→⁴T_1g) for Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺, respectively. The crystal field parameters (Dq) of the Mn⁴⁺ ions in the Na₂SnF₆ and Cs₂SnF₆ hosts are determined to be ∼1930 and ∼1920 cm⁻¹, respectively. Temperature-dependent PL measurements are performed from 20 to 440 K in steps of 10 K, and the obtained results are interpreted by taking into account the Bose-Einstein occupation factor. Comprehensive discussion is given on the phosphorescent properties of a family of Mn⁴⁺-activated alkaline hexafluoride salts.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Double-ceramic-layer thermal barrier coatings based on La2(Zr0.7Ce0.3)2O7/La2Ce2O7 deposited by electron beam-physical vapor deposition

Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La₂(Zr_0.7Ce_0.3)₂O₇ (LZ7C3) and La₂Ce₂O₇ (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO₃ is formed due to the chemical reaction between LC and Al₂O₃ which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.     

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

The diamond abrasive particles were coated with the TiO₂/Al₂O₃ film by the sol-gel technique. Compared with the uncoated diamonds, the TiO₂/Al₂O₃ film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO₂/Al₂O₃ film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO₂/Al₂O₃ film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2H_RC to 66.5H_RC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Mechanism of amorphous Ge2Sb2Te5 removal during chemical mechanical planarization in acidic H2O2 slurry

In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2 . Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.