The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W–1 and 70.1 cd A–1, respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.
The broadband enhancement of single‑photon emission from nitrogen‐vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS‐compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1‐xN). It is demonstrated that employing the metamaterial results in significant enhancement of collected single‑photon emission and reduction of the excited‐state lifetime. Our results could have an impact on future CMOS‐compatible integrated quantum sources.
Nanoscale lasers are attractive for their potential applications in highly integrated photonic devices and systems. Here, nanolaser arrays are realized based on individual waved CdS nanoribbons (NRs) with periodically modulating thickness along the length direction. Microstructure investigations reveal that such a waved NR is formed with triangular‐prism‐like ridges alternately assembled on both sides of a surface flat nanoribbon. Under the focused laser (488 nm) excitation, the emitted light is guided along the length of the waved ribbons and can be well confined into theses ridges, being reflected and leaked out at their ends along both the lateral sides of the NRs. Polarization measurements further demonstrate the formation of the cavities along the length of the ridges. Under pulse laser excitation, the confined light in all these parallel ridges can resonate and realize lasing, forming a nanolaser array based on these individual waved NRs. These nanolasers arrays have potential applications in highly integrated photonics, signal processing, and high‐throughput sensing.
A scheme for active temporal‐to‐spatial demultiplexing of single photons generated by a solid‐state source is introduced. The scheme scales quasi‐polynomially with photon number, providing a viable technological path for routing n photons in the one temporal stream from a single emitter to n different spatial modes. Active demultiplexing is demonstrated using a state‐of‐the‐art photon source—a quantum‐dot deterministically coupled to a micropillar cavity—and a custom‐built demultiplexer—a network of electro‐optically reconfigurable waveguides monolithically integrated in a lithium niobate chip. The measured demultiplexer performance can enable a six‐photon rate three orders of magnitude higher than the equivalent heralded SPDC source, providing a platform for intermediate quantum computation protocols.
Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well‐established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dual‐wavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dot‐based semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical‐to‐terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy‐dependent optical and electronic characteristics of quantum‐dot‐based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot‐based semiconductor lasers as pump sources. Proof‐of‐concept experiments are demonstrated here that show quantum dot‐based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.
Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.
A very promising recent trend in applied quantum physics is to combine the advantageous features of different quantum systems into what is called “hybrid quantum technology”. One of the key elements in this new field will have to be a quantum memory enabling to store quanta over extended periods of time. Systems that may fulfill the demands of such applications are comb‐shaped spin ensembles coupled to a cavity. Due to the decoherence induced by the inhomogeneous ensemble broadening, the storage time of these quantum memories is, however, still rather limited. Here we demonstrate how to overcome this problem by burning well‐placed holes into the spectral spin density leading to spectacular performance in the multimode regime. Specifically, we show how an initial excitation of the ensemble leads to the emission of more than a hundred well‐separated photon pulses with a decay rate significantly below the fundamental limit of the recently proposed “cavity protection effect”.
High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 μm. The active region was dry etched before being regrown with semi‐insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550μm, were identified as slow Bloch photonic crystal modes by means of three‐dimensional photonic simulations and measurements.
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
The generation of sub‐optical‐cycle, carrier–envelope phase‐stable light pulses is one of the frontiers of ultrafast optics. The two key ingredients for sub‐cycle pulse generation are bandwidths substantially exceeding one octave and accurate control of the spectral phase. These requirements are very challenging to satisfy with a single laser beam, and thus intense research activity is currently devoted to the coherent synthesis of pulses generated by separate sources. In this review we discuss the conceptual schemes and experimental tools that can be employed for the generation, amplification, control, and combination of separate light pulses. The main techniques for the spectrotemporal characterization of the synthesized fields are also described. We discuss recent implementations of coherent waveform synthesis: from the first demonstration of a single‐cycle optical pulse by the addition of two pulse trains derived from a fiber laser, to the coherent combination of the outputs from optical parametric chirped‐pulse amplifiers.
The ferroelectric domain structures of periodically poled KTiOPO4 and two‐dimensional short range ordered poled LiNbO3 crystals are determined non‐invasively by interferometric measurements of the electro‐optically induced phase retardation. Owing to the sign reversal of the electro‐optical coefficients upon domain inversion, a π phase shift is observed for the inverted domains. The microscopic setup provides diffraction‐limited spatial resolution allowing us to reveal the nonlinear and electro‐optical modulation patterns in ferroelectric crystals in a non‐destructive manner and to determine the poling period, duty cycle and short‐range order as well as detect local defects in the domain structure. Conversely, knowing the ferroelectric domain structure, one can use electro‐optical microscopy so as to infer the distribution of the electric field therein.
Narrow‐linewidth lasers are key elements in optical metrology and spectroscopy. Spectral purity of these lasers determines accuracy of the measurements and quality of collected data. Solid state and fiber lasers are stabilized to relatively large and complex external optical cavities or narrow atomic and molecular transitions to improve their spectral purity. While this stabilization technique is rather generic, its complexity increases tremendously moving to longer wavelenghts, to the infrared (IR) range. Inherent increase of losses of optical materials at longer wavelengths hinders realization of compact, room temperature, high finesse IR cavities suitable for laser stabilization. In this paper, we report on demonstration of quantum cascade lasers stabilized to high‐Q crystalline mid‐IR microcavities. The lasers operating at room temperature in the 4.3‐4.6 μm region have a linewidth approaching 10 kHz and are promising for on‐chip mid‐IR and IR spectrometers.
Teleportation describes the transmission of information without transport of neither matter nor energy. For many years, however, it has been implicitly assumed that this scheme is of inherently nonlocal nature, and therefore exclusive to quantum systems. Here, we experimentally demonstrate that the concept of teleportation can be readily generalized beyond the quantum realm. We present an optical implementation of the teleportation protocol solely based on classical entanglement between spatial and modal degrees of freedom, entirely independent of nonlocality. Our findings could enable novel methods for distributing information between different transmission channels and may provide the means to leverage the advantages of both quantum and classical systems to create a robust hybrid communication infrastructure.
A diode‐pumped Yb:YAG MOPA‐System for the unprecedented generation of transform limited pulses with variable pulse duration in the range between 10 ps and 100 ps is presented. First applications relying on unique pulse parameters as modulation free spectrum, tunability and coherence length, namely the direct laser interference patterning (DLIP) and laser cooling of stored relativistic ion beams are highlighted. Pulses are generated by a mode‐locked fs‐oscillator while the spectral bandwidth is narrowed in the subsequent regenerative amplifier by an intra‐cavity grating monochromator. Two alternative booster amplifiers were added to increase the pulse energy to 100 μJ and 10 mJ, respectively.
Photonic waveguide arrays provide an excellent platform for simulating conventional topological systems, and they can also be employed for the study of novel topological phases in photonics systems. However, a direct measurement of bulk topological invariants remains a great challenge. Here we study topological features of generalized commensurate Aubry‐André‐Harper (AAH) photonic waveguide arrays and construct a topological phase diagram by calculating all bulk Chern numbers, and then explore the bulk‐edge correspondence by analyzing the topological edge states and their winding numbers. In contrast to incommensurate AAH models, diagonal and off‐diagonal commensurate AAH models are not topologically equivalent. In particular, there appear nontrivial topological phases with large Chern numbers and topological phase transitions. By implementing Thouless pumping of light in photonic waveguide arrays, we propose a simple scheme to measure the bulk Chern numbers.
The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct‐bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single‐ and entangled‐photon generation by radiative recombination, low‐loss routing, electro‐optic modulation and single‐photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully‐functional and densely integrated quantum photonic circuit.
Optically levitated nanodiamonds with nitrogen‐vacancy centers promise a high‐quality hybrid spin‐optomechanical system. However, the trapped nanodiamond absorbs energy from laser beams and causes thermal damage in vacuum. It is proposed here to solve the problem by trapping a composite particle (a nanodiamond core coated with a less absorptive silica shell) at the center of strongly focused doughnut‐shaped laser beams. Systematical study on the trapping stability, heat absorption, and oscillation frequency concludes that the azimuthally polarized Gaussian beam and the linearly polarized Laguerre‐Gaussian beam LG03 are the optimal choices. With our proposal, particles with strong absorption coefficients can be trapped without obvious heating and, thus, the spin‐optomechanical system based on levitated nanodiamonds are made possible in high vacuum with the present experimental techniques.
