Anomalous physical properties and Raman spectra of glassy B2O3BaTiO3Na2O materials

Anomalous physical properties (refractive index and density) of B₂O₃BaTiO₃Na₂O ternay glasses are determined and discussed on the basis of the structure present in the glasses and evidenced by vibrational Raman spectroscopy.These glasses behave in a manner analogous to the alkali B₂O₃X₂O binary glasses for molar ratio R = basic oxide/B₂O₃ up to 0.3, with oxygen binding by means of bridging bonds while boron coordination changes from the trigonal to tetrahedral type. The phenomenon is indicated by a progressive weakening of the 806 cm^?1 peak (attributable to a breathing vibration of the boroxol unit) and by a concomitant strengthening of the ～775 cm^?1 peak (attributable to a vibrational mode of boroxol units, or derived units, containing at least one 4-coordinate boron atom). For higher R values the Raman spectra bring to light the progressive demolition of the structural units responsible for the 775 cm^?1 Raman peak, which gives rise (the transformation is complete for R ～ 1) to two new main structural units, orthoborate [BTi₄O₁₀]^?1 (peak at 845 cm^?1) and metaborate BO₂^? (peak at 715 cm^?1).     

Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4

Vibrational excitations of α- and β-Si₃N₄ were studied by Raman and infrared absorption spectroscopies. Group theory was employed to interpret the observed spectra of crystalline α- and β-Si₃N₄. Both Raman and IR spectra of amorphous Si₃N₄ exhibit two broad peaks centered at about 400 and 900 cm^?1. Amorphous Si₃N₄ was found to be of the non-molecular, random-network type.     

Raman spectroscopic study of scandium in sodium silicate glasses

Glasses in the Na₂OSiO₂Sc₂O₃ system have been studied by Raman and difference Raman spectroscopy. Addition of Sc₂O₃ to sodium silicate glasses results in new vibrational bands at 1025 cm^?1 and 360 cm^?1. The high frequency band is interpreted to be due to Sc⁺³ quasi-complexes formed by Sc⁺³ ions coordinated by SiO₄^?4 tetrahedra having non-bridging oxygens. The discrete character of the scandium-produced bands implies incipient separation of Sc⁺³-enriched silicate structures from purely silicate structures.     

Raman Scattering From TMTSF-Salts

Abstract

Experimental results for Raman scattering from TSeF, TMTSF-D12, (TMTSF)₂PF₆ and (TMTSF)₂AsF₆ excited with blue-green laser light at liquid nitrogen temperature are reported. A strong resonance effect for excitation of TMTSF with 4579 Å was observed and an assignment for the a_g modes was obtained by comparison with results from TTF. Methyl group modes were identified at 328 cm^?1, 472 cm^?1 and 916 cm^?1, respectively. Charging the TMTSF molecule resulted in a strong frequency shift of -122 cm^?1 and -76 cm^?1 for the a_gu₂ mode, respectively. A study of the temperature dependence of the scattering from molecular modes between 2 K and 300 K did not reveal any correlation with the phase transitions in the conducting compounds.     

High temperature ESR study of Fe(III) in various vitreous matrices

The Raman spectra of binary high-silica glasses have been studied. The main peaks at 808 cm^?1 and 710 cm^?1 in vitreous B₂O₃ and vitreous P₂O₅, respectively, are greatly reduced in binary high-silica glass, whereas a peak at 425 cm^?1 due to GeOGe vibration and a peak at 1320 cm^?1 due to P = O vibration remain strong, increasing in intensity with decreasing SiO₂ concentration. In the stimulated Raman spectra of a P₂O₅-SiO₂ glass fiber pumped by a mode-locked and Q-switched Nd:YAG laser at 1.064 μm, strong Stokes emissions due to the P = O vibration have been observed at 1.24 μm and 1.48 μm. In the spectra for a GeO₂-SiO₂ glass fiber, four narrow-width Stokes emissions due to the GeOGe vibration have been observed at 1.115, 1.172, 1.235 and 1.305 μm.     

In Situ Raman and Epr Investigations of A Cis-(Ch)X Electrode

Abstract

In situ Raman and EPR experiments have been performed on a cis-(CH)_x electrode in an electrochemical cell {(CH)_x/1M L1C10₄ in THF/Li}. After a n-type doping with Li, the Raman spectra exhibit new features at = 1600 cm^?1 and 1270 cm^?1, comparable to those obtained with [CH)_X films Li doped via a chemical treatment. The evolution of the EPR signal is followed in a doping-dedoping cycle, showing both the reversibility of the process as well as the evidence for a metallic behavior at the maximum doping concentration.     

Stimulated Raman scattering by C<Subscript>12</Subscript>H<Subscript>22</Subscript>O<Subscript>11</Subscript> sugar (sucrose)

The efficient Stokes and anti-Stokes laser emissions with Raman frequency shift at about 2960 cm^?1 are excited in a food C₁₂H₂₂O₁₁ sugar (sucrose) single crystal under pulsed pumping. Other (χ⁽²⁾ + χ⁽³⁾) effects of the parametric Raman generation are also detected.     

Spectres de vibration du Cristal de Biphényle à Basse Température

Abstract

Low-temperature infrared and Raman spectra of Crystalline biphenyl have been investigated in the 3100–25 cm^?1 range, and those of biphenyl-D₁₀ between 200 and 25 cm^?1. The infrared dichroism of an Oriented crystal at 77°K has been measured in the 3100–400 cm^?1 region. The assignment for the internal modes V ₅(B_2u), v ₆ (B_2u), v ₁(B_1u), v ₁₀(B_1g), v ₂(B_2g) et v ₃ (B_3g) is given.

The band splitting is analized and hte components due ot the correlation effect in the fundamentals are separated from the components due to combinations. Isotopic shifts are used to assign the nine external vibrations as well as the torsional mode. The temperature effect on the frequencies occuring below 500 cm^?1 is discussed.     

Ionic conductivity of Li2OB2O3 thin films

The ionic conductivity of evaporated Li₂OB₂O₃ thin films has been studied. These thin films were found to show a considerably high ionic conductivity of 1 × 10^?7 Ω^?1 cm^?1 at room temperature. The conductivity increases with increasing Li content and exhibits a maximum value near 3Li₂O·B₂O₃. The structure of these films was determined using infrared absorption and laser Raman scattering spectroscopy. Using the results, the correlation between structure and conductivity is also discussed.     

Low frequency Raman scattering in chalcogenide glasses

Low frequency Raman spectra of chalcogenide glasses are analyzed in terms of matrix element effects and modes of a layered structure. The spectra of GeSe₂ at low temperature shows no peaks which can be assigned to layer modes. The reduced spectra indicates that the density of states exhibits nearly ω² dependence for ω < 60 cm^?1, and the coupling constant approaches ω² dependence at frequencies less than 20 cm^?1.     

Raman Investigation of Alkali-Doped (Ch)x films

Abstract

Resonance Raman spectra induced by (CH)_x films chemically or electrochemically doped with alkali metals are reported. At low doping levels, Raman bands characteristic of the trans isomer are observed. The Raman spectra can be well fitted using the theory developped by Mulazzi based on a bimo-dal distribution of long and short trans segments respectively. At the same time, typical results obtained for a cis-rich (CH)_x sample, as well as its behavior during a thermal isomerization, are recalled in the frame of the Mulazzi model. When the polymer is highly doped with Li (or Na) atoms, new features at ? 1600 cm^?1 and 1270 cm^?1 appear and could be an indication that n-doped films are less disordered than p-doped systems.     

Quantitation of sulfate solubility in borosilicate glasses using Raman spectroscopy

Raman spectroscopy is used here as an innovative technique to investigate sulfate content in borosilicate glasses. Using Raman spectroscopy after having heated the material, the evolution of sulfate amounts can be followed as a function of temperature, time and chemical composition of the starting matrix. The accuracy of this technique was verified using electron probe micro analysis (EPMA), on two systems of glasses (SiO₂–B₂O₃–Na₂O (SBNa) and SiO₂–B₂O₃–BaO (SBBa)) in order to compare the effect of alkaline or alkaline-earth elements on sulfur speciation and incorporation. To quantitate sulfate content with Raman spectroscopy, the integrated intensity of the sulfate band at 990 cm^?1 was scaled to the sum of the integrated bands between 850 and 1250 cm^?1, bands that are assigned to Qⁿ silica units. Calibration curves were then determined for different samples. The determination of sulfate contents with Raman spectroscopy analysis is possible with an accuracy of approximately 0.1 wt% depending on the composition of the glass. It mainly allows us to follow sulfate removal during the elaboration process and to establish kinetic curves of sulfate release as a function of the viscosity of the borosilicate glass.     

X-ray diffraction study and quantitative measurements of high dislocation densities in superlattices and single crystal layers of heteroepitaxial systems with pronounced lattice mismatch

Plastic deformation in a single-crystal layer of the In_0.12Ga_0.88As/(111)InP solid solution is identified by the methods of X-ray diffractometry (XRD) and the double-crystal pseudorocking curves (DCPRC). X-ray topographs showed the generation of three intersecting systems of straight dislocations in the layer. In a one-layer ZnSe/GaAs structure and multilayer ZnSe/ZnSe_{1 − x} S_x/ZnSe/GaAs structures, the elastic and plastic strains were detected by the combined XRD-DCPRC method. The major components of the thermoelastic and plastic-deformation tensors were determined as ε_xx = ε_yy = 3.5 × 10⁻³ and ε_zz = 2.35 × 10⁻³. Using these data, the dislocation densities were determined as N _d ∼ 2.5 × 10⁸ cm⁻² and N _d ∼ 3 × 10¹⁰ cm⁻² for the 7 μm-thick ZnSe and 1 μm-thick InAs layers, respectively. In a superlattice of the Al_xGa_{1 − x} As/GaAs/⋯/GaAs-type with a large lattice parameter, the plastic deformation was detected. X-ray topography confirmed that the dislocation density in this superlattice equals ∼10⁵ cm⁻². __________ Translated from Kristallografiya, Vol. 45, No. 2, 2000, pp. 326–331. Original Russian Text Copyright ? 2000 by Kuznetsov.     

The preparation and structural studies in the (80 − x)TeO2–20ZnO–(x)Er2O3 glass system

Er³⁺-doped tellurite glasses of the (80 ? x)TeO₂–20ZnO–(x)Er₂O₃ system (0.5 mol% ? x ? 2.5 mol%) have successfully been made by melt-quenching technique and their structure has been investigated by means of DTA and Raman spectroscopy. The DTA results show the thermal parameters; such as the glass transition temperature (T_g) and crystallization temperature (T_c) were determined. It is found that this system provides a stable and wide glass formation range in which the glass stability around 99–140 °C may be obtained. The Raman spectroscopy used the structural studies in the glass system. Two Raman shift peaks were observed around 640–670 cm^?1 and 720–740 cm^?1, which correspond to the stretching vibration mode of TeO₄ tbp and TeO₃ tp, respectively. It is found that the spectral shift in Raman spectra is depending on the Er₂O₃ content. This evolution is an indication of the changes in the basic unit of the glass structure.     

Microscopic origin of anomalously narrow Raman lines in network glasses

Molecular models for the mysterious 495 and 606 cm^?1 “defect” lines in the Raman spectra of g-SiO₂ are discussed in the context of a general theory and a survey of a wide range of experimental data, including hydroxylation, neutron bombardment, and isotope shifts.     

X-ray diffraction study of defects in zinc-diffusion-doped silicon

Samples of CZ n-Si〈Zn〉(111) are prepared by high-temperature zinc-diffusion annealing followed by quenching and are studied by X-ray diffraction. The silicon contains an initial phosphorus impurity and zinc-compensating admixture at concentrations N _P = 1.5 × 10¹⁴ cm^?3 and N _Zn = 1 × 10¹⁴ cm^?3; i.e., the relation N _P/2 < N _Zn < N _P is fulfilled. Microdefects are studied by double- and triple-crystal X-ray diffraction in the dispersion free modes (n, ?n) and (n, ?n, +n). The samples are found to contain microdefects with two characteristic sizes (average sizes of about 1 μm and 70 nm). The interplanar distance in the near-surface layer with a thickness of 0.1 μm is smaller than this parameter in the remaining matrix, the difference being equal to d ₀ Δd/d ₀ ≈ 2 × 10^?5. This layer contains mainly vacancy-type microdefects. The angle between the reflecting planes and the local surface relief is Δψ = (7 ± 1) arcmin.     

Intrinsic and impurity infrared absorption in As2Se3 glass

A quantitative study of infrared absorption in the 250–4000 cm^?1 region of As₂Se₃ glasses doped with small amounts of As₂O₃ or purified by various procedures has been carried out with particular attention to absorption in the wavelength regions of the CO₂ and CO lasers. The dependence of the relative intensities of the oxide impurity bands in the 650–1340 cm^?1 region on the total amount of As₂O₃ added to the glass indicates the existence of three distinct oxide-impurity species. A number of higher-frequency impurity bands which are due to the presence of hydrogen in the glass and whose intensities are highly dependent on the glass-melting conditions have been observed and classified. Intrinsic multiphonon absorption in the 400–1100 cm^?1 region has been interpreted in terms of combination and overtone bands of the two highest-frequency fundamental vibrational modes. Absorption coefficients of As₂Se₃ glass in the 920–1090 cm^?1 CO₂ laser region are limited by intrinsic multiphonon absorption to values of around 10^?2 cm^?1. The lowest absorption coefficients measured in the 1700–2000 cm^?1 CO laser region were around 2 × 10^?3 cm^?1 and may contain contributions from hydrogen-impurity bands.     

Bulk and impurity infrared absorption in 0.5 As2Se30.5 GeSe2 glass

A study of infrared absorption in the 250–4000 cm^?1 region has been carried out for 0.5 As₂Se₃0.5 GeSe₂ glasses quantitatively doped with oxide impurity. The frequencies of the intrinsic 2- and 3-phonon absorption bands at 490 and 690 cm^?1 correspond well to those predicted from combinations of the high frequency bands in the first order IR and Raman spectra of As₂Se₃ and GeSe₂ glasses.Glasses doped with As₂O₃ exhibit the same oxide impurity absorptionbands as those doped with GeO₂. Unlike As₂Se₃ glass, at impurity concentrations up to 1000 ppm As₂O₃, 0.5 As₂Se₃0.5 GeSe₂ glass exhibits only one major oxide impurity species, characterized by absorption bands at 780 and 1260 cm^?1 and due to oxygen bonded to network Ge. The observation of a much weaker network AsO vibration band at 670 cm^?1 confirms that oxygen bonds preferentially to Ge in this glass. The same minor oxide species appears to determine excess IR absorption at the CO₂ laser wavelength of 10.6 μm in both As₂Se₃ and 0.5 As₂Se₃ 0.5 GeSe₂ glasses. The frequencies and intensities of absorption bands due to hydrogen impurities are also quite comparable for these two materials.     

Structural interpretations for some Raman lines from vitreous silica

An interpretation based on non-random structural features is advanced for the 490 and 604 cm^?1 Raman lines from vitreous silica. The sharp, polarized 490 cm^?1 line is considered to arise from a small concentration of planar rings involving three $\text{SiO}{}_{\mathrm{<mtext>4</mtext><mtext>2</mtext>}}$ tetrahedra. The somewhat broader line at 604 cm^?1 is thought to be associated with rings of various sizes, both planar and puckered, that are connected to the rest of the structure by elongated SiO bonds. Changes in the concentration and/or Raman scattering cross-section of these ring structures produced by changes in fictive temperature, neutron irradiation, high elastic tensile and compressive stresses, annealing, and by changes in the SiOH content are thought to produce the intensity variations observed in these two Raman lines.     

Infrared spectra and structure of superionic conducting glasses in the system AgIAg2OMoO3

Thin blown films of glasses with the mole ratio Ag₂O/MoO₃ = 1 in the system AgIAg₂OMoO₃ (or the pseudobinary system AgIAg₂MoO₄) show three absorption bands in the range 4000-200 cm^?1; 875 cm^?1 (w), 780 cm^?1 (s), and 320 cm^?1 (m, b), which are characteristic of tetrahedral MoO₄^2? ions. The glasses with the ratio Ag₂O/MoO₃ < 1 have two additional bands at 600 cm^?1 (w) and 450 cm^?1 (vw), which are characteristic of condensed ions of MoO₄ tetrahedra, probably Mo₂ O₇^2? ions. These glasses are thus composed of Ag⁺, I^?, MoO₄^2?, and probably Mo₂O₇^2? ions, and classified as “ionic” glasses containing one type of cations. The presence of partial covalency in the Ag⁺… ^?OMo link and the influence of ion exchange of Ag⁺ with K⁺ on IR spectra are discussed. The molar volume of the glasses with the ratio Ag₂O/MoO₃ = 1 is primarily determined by a fairly dense packing of the constituent anions, I^? and MoO₄^2?.