Population coherent control of Rydberg potassium atom via adiabatic passage

The time-dependent multilevel approach(TDMA) and B-spline expansion technique are used to study the coherent population transfer between the quantum states of a potassium atom by a single frequency-chirped microwave pulse.The Rydberg potassium atom energy levels of n=6-15,l=0-5 states in zero field are calculated and the results are in good agreement with other theoretical values.The time evolutions of the population transfer of the six states from n=70 to n=75 in different microwave fields are obtained.The results show that the coherent control of the population transfer from the lower states to the higher ones can be accomplished by optimizing the microwave pulse parameters.     

Population coherent control of a Rydberg sodium atom in a microwave field

The B-spline expansion technique and the time-dependent multilevel approach (TDMA) are used to study the interaction between a microwave field and sodium atoms. The Rydberg sodium atom energy levels of p states in zero field are calculated, and the results are in good agreement with the other theoretical ones. The time evolutions during the population transfers of the five states from n = 75 to n = 79 in different microwave fields are obtained. The results show that the coherent control of the population transfer from the lower states to the higher ones can be accomplished by optimizing the microwave pulse parameters.     

Line intensities of the asymptotic asymmetric-top radical HO2 at high temperatures

The total internal partition sums were calculated in the product approximation at temperatures up to 5000 K for the asymptotic asymmetric-top HO2 molecule. The calculations of the rotational partition function and the vibrational partition function were carried out with the rigid-top model and in the harmonic oscillator approximation, respectively. Our values of the total internal partition sums are consistent with the data of HITRAN database with -0.14% at 296 K. Using the calculated partition functions, we have calculated the line intensities of υ2 band of HO2 at several high temperatures. The results showed that the calculated line intensities are in very good agreement with those of HITRAN database at temperatures up to 3000 K, which provides a strong support for the calculations of partition functions and line intensities at high temperatures. Then we have extended the calculation to higher temperatures. The simulated spectra of υ2 band of the asymptotic asymmetric-top HO2 molecule at 4000 and 5000 K are also obtained.     

Investigation of neutron induced reactions on ~(23)Na by using Talys 1.4

The neutron induced reactions on23 Na are investigated by using the Talys1.4 program. The calculated results for the23Na(n, 2n)22Na reaction are found to agree with the experimental results. The cross sections of the residues of the(n, n),(n, γ),(n, p), and(n, np) channels in the reactions are presented, and at the same time, the neutron induced reactions on22 Ne are also investigated.     

Study on High-Temperature Spectra of Asymptotic Asymmetric-Top Molecule O3

The line intensities of 001-000 transition of the asymptotic asymmetric-top Oa molecule at several temperatures are calculated by directly calculating the partition functions and regarding the rotationless transition dipole moment squared as a constant. The calculated values of the total internM partition sums （TIPS） are consistent with the data of HITRAN database with -0.61% at 296 K. The calculated line intensity data at 500 K and 3000 K are also in excellent agreement with the data in HITRAN database with less than 0.659% and 5.458% at 500 K and 3000 K, which provide a strong support for the calculations of partition function and fine intensity at high temperature. Then we extend the calculation to higher temperatures. The line intensities and simulated spectra of v3 band of the asymptotic asymmetric-top O3 molecule at 4000 and 5000 K are reported. The results are of significance for the studying of the molecular high-temperature spectrum including experimental measurements and theoretical calculations.     

High Temperature Spectrum for v3 Band of Carbon Dioxide

The total internal partition sums （TIPS） are calculated at the temperature up to 6000 K for 12 C16 02. Using the calculated partition functions, we produce the line intensities of v3 band of 12C1602 at several high temperatures. The results show that the calculated line intensities are in very good agreement with those of HITRAN database at the temperature up to 3000 K, which provides a strong support for the calculations of TIPS and line intensities at high temperature. Then the calculation is extended to further high temperature, and the simulated spectra of u3 band of 12C1602 at 5000 and 6000 K are reported.     

Half-Lives of Spherical Proton Emitters

The distorted-wave Born approximation （DWBA） method is used to calculate the half-lives of spherical proton emitters. The calculated results are in agreement with the experimental data, The sensitivity of the half-lives to the depth of central potential V0 is investigated by using the DWBA method. The half-lives of spherical proton emitters are insensitive to the detail of their nuclear potential.     

Investigation of neutron induced reactions on ^23Na by using Talys1.4

The neutron induced reactions on ^23Na are investigated by using the Talys1.4 program. The calculated results for the ^23Na（n, 2n）22Na reaction are found to agree with the experimental results. The cross sections of the residues of the（n, n）,（n, γ）,（n, p）, and（n, np） channels in the reactions are presented, and at the same time, the neutron induced reactions on22 Ne are also investigated.     

Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it in-situ} and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.     

Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes

Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300 K is obtained at a fixed forward current after switching from N2 to 10%H2＋N2. The sensor responses under different concentrations from 50ppm H2 to 10%H2＋N2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N2 and air atmosphere at 300 and 373K are compared. Oxygen in air azcelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity Of the sensor are calculated.     

饱和效应对激光场强度相关时间和有效本征值的影响

用全饱和激光模型对既含有加性又含有倍增噪声的激光场进行理论分析，求出了强度相关时间Ｔｃ的数值解和有效本征值λｅｆｆ的解析解。与实验测量相比较表明，全饱和激光模型与实验吻合得最好，而三次激光模型的偏差较大。     

Effective viscosity of confined hydrocarbons

We present molecular dynamics friction calculations for confined hydrocarbon films with molecular lengths from 20 to 1400 carbon atoms. We find that the logarithm of the effective viscosity η(eff) for nanometer-thin films depends linearly on the logarithm of the shear rate: log η(eff)=C-nlog ?γ, where n varies from 1 (solidlike friction) at very low temperatures to 0 (Newtonian liquid) at very high temperatures, following an inverse sigmoidal curve. Only the shortest chain molecules melt, whereas the longer ones only show a softening in the studied temperature interval 0相似文献   

Theory of nonlinear Sagnac effect

A nonlinear wave interaction is considered as a technique to increase the rotation sensitivity of the ring laser. The gyroscopic scale factor K is calculated in an active laser gyro with a dispersive medium. K is in reverse proportion to the group index n* = n + vdn/dv of the medium. In a monolithically-integrated GaAs ring laser, the value K ∼5000 is obtainable (radius ∼1 cm) in a linear case. In the presence of a strong wave, the dynamic nonlinear anomalous dispersion can provide an increase of K by 10–100 times in the vicinity of critical points where n* passes zero. An expression of K is derived for the nonlinear Sagnac effect. The nonlinear dispersion is discussed in terms of “slow/fast” light.     

低阈值852nm半导体激光器的温度特性

通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。     

Conventional MR imaging with simultaneous measurements of cerebral blood volume and vascular permeability in ganglioglioma

The conventional MR imaging appearance of gangliogliomas is often variable and nonspecific. Conventional MR images, relative cerebral blood volume (rCBV) and vascular permeability (K(trans)) measurements were reviewed in 20 patients with pathologically proven grade 1 and 2 gangliogliomas (n = 20) and compared to a group of grade 2 low-grade gliomas (n = 30). The conventional MRI findings demonstrated an average lesion size of 4.1 cm, contrast enhancement (n = 19), variable degree of edema, variable mass effect, necrosis/cystic areas (n = 8), well defined (n = 12), signal heterogeneity (n = 9), calcification (n = 4). The mean rCBV was 3.66 +/- 2.20 (mean +/- std) for grade 1 and 2 gangliogliomas. The mean rCBV in a comparative group of low-grade gliomas (n = 30), was 2.14 +/- 1.67. p Value < 0.05 compared with grade 1 and 2 ganglioglioma. The mean K(trans) was 0.0018 +/- 0.0035. The mean K(trans) in a comparative group of low-grade gliomas (n = 30), was 0.0005 +/- 0.001. p Value = 0.14 compared with grade 1 and 2 ganglioglioma. The rCBV measurements of grade 1 and 2 gangliogliomas are elevated compared with other low-grade gliomas. The K(trans), however, did not demonstrate a significant difference. Gangliogliomas demonstrate higher cerebral blood volume compared with other low-grade gliomas, but the degree of vascular permeability in gangliogliomas is similar to other low-grade gliomas. Higher cerebral blood volume measurements can help differentiate gangliogliomas from other low-grade gliomas.     

Effects of electrodes on performance figures of thin film bulk acoustic resonators

The effects of mechanical losses and elastic properties of the electrodes on the performance figures of a thin film bulk acoustic resonator (FBAR) are analyzed by numerical simulation. Results indicate that the material loss of the electrode has no visible effect on the characterization of the effective electromechanical coupling factor, k(eff)2. The acoustic impedance ratio of the electrode to the piezo-film dominantly determines the behaviors of the k(eff)2 variation with the electrode thickness. The resonance Q value, Q(s), of the FBAR closely relies on the material Q values of film and of electrodes as expected. Besides, the variation of Q(s) versus the thickness of the electrodes crucially depends on the acoustic impedance ratio as well. Especially, three characteristic parameters, i.e., the maximum value of k(eff)2, the sectional mass ratio of the electrode to the piezo film corresponding to the maximum k(eff)2, and the tolerance range of the ratio to keep k(eff)2 near the maximum, are calculated for some typical samples. These results would be useful for optimizing FBAR designs and performances.     

Measurements of CP-violating asymmetries in the decay B0-->K+K-K0

We analyze the decay B0-->K+K-K0 using 383 x 10(6) BB events collected by the BABAR detector at SLAC to extract CP violation parameter values over the Dalitz plot. Combining all K+K-K0 events, we find ACP=-0.015+/-0.077+/-0.053 and beta eff = 0.352+/-0.076+/-0.026 rad, corresponding to a CP violation significance of 4.8 sigma. A second solution near pi/2-beta eff is disfavored with a significance of 4.5 sigma. We also report ACP and beta eff separately for decays to phi(1020)K0, f0(980)K0, and K+K-K0 with mK+K- > 1.1 GeV/c2.     

Non-universal equilibrium crystal shape results from sticky steps

The anisotropic surface free energy, Andreev surface free energy and equilibrium crystal shape (ECS) z = z(x,y) are calculated numerically using a transfer matrix approach with the density matrix renormalization group (DMRG) method. The adopted surface model is a restricted solid-on-solid (RSOS) model with 'sticky' steps, i.e. steps with a point-contact-type attraction between them (p-RSOS model). By analyzing the results, we obtain a first-order shape transition on the ECS profile around the (111) facet; and on the curved surface near the (001) facet edge, we obtain shape exponents having values different from those of the universal Gruber-Mullins-Pokrovsky-Talapov (GMPT) class. In order to elucidate the origin of the non-universal shape exponents, we calculate the slope dependence of the mean step height of 'step droplets' (bound states of steps) (n(p)) using the Monte Carlo method, where p = (?z/?x,?z/?y) and (·) represents the thermal average. Using the result of the |p| dependence of (n(p)), we derive a |p|-expanded expression for the non-universal surface free energy f(eff)(p), which contains quadratic terms with respect to |p|. The first-order shape transition and the non-universal shape exponents obtained by the DMRG calculations are reproduced thermodynamically from the non-universal surface free energy f(eff)(p).     

含Nb微合金钢应变诱导析出的模拟

基于物理冶金原理建立了微合金钢在热轧过程中流变应力、回复、再结晶和析出模型，模拟了含Nb微合金钢Nb（C,N）析出动力学，并利用Thermo-Calc软件计算了不同条件下析出粒子形核驱动力和元素平衡含量值，同时考虑了回复和再结晶对析出的影响.计算结果表明，该模型对含Nb微合金钢在不同热轧形变条件下模拟结果与实验结果符合较好，因此可以有效预测在不同热轧形变条件下析出粒子体积分数和析出粒子尺寸. 关键词： 微合金钢 位错密度 回复 再结晶     

光谱法研究异丙甲草胺及其S-对映体与脲酶的相互作用机制

应用紫外差光谱和荧光光谱法研究了水溶液中酰胺类除草剂异丙甲草胺及其S 异构体与脲酶分子间的相互作用。结果表明 ,随着除草剂浓度的增加 (0 0～ 1 6 μmol·L-1 ) ,脲酶的紫外吸收光谱发生红移 ,吸收强度减弱。除草剂对脲酶的荧光均有猝灭作用 ,且静态猝灭是引起脲酶荧光猝灭的主要原因。从荧光猝灭结果求出了除草剂和脲酶的结合常数及结合位点数。异丙甲草胺 :K =1 4 9× 1 0 3 L·mol-1 ,n =0 84 ;S 异丙甲草胺 :K =2 2 2× 1 0 3 L·mol-1 ,n =0 89。