First Principles Study of Adsorption and Reaction of CO on SrTiO3 （100） Surface： the Role of Surface Oxygen Vacancies

The adsorption and reaction of CO on SrTiO3 （100） surface with and without surface oxygen vacancy are investigated by the first-principles calculation based on the density functional theory. The calculated results reveal that the oxygen vacancy site prefers to the activation of the C-O bond. The adsorption energies increase to 1.0855 and 0.3245eV for defect-CO and defect-OC orientations, respectively. Particularly the C-O bond is elongated by about 0.1285 ？ in the defect-OC orientation compared with that in the Ti-OC one without surface oxygen vacancies. There is predominantly a chemisorption mechanism between the CO molecule and the surface in the defect-CO orientation.     

Crystal Structure of β-La2Mo2O9 from First Principles Calculation

Arrangements of O ions in β-La2Mo2O9 are studied by first principles calculation with two different calculation schemes. All final structure configurations consist of MoO4-tetrahedra, MoO5-hexahedra, LaO8 and LaO7 polyhedra. Molybdenum polyhedra are isolated from each other, lanthanum polyhedra are connected together by sharing O ions. The occupancies of three crystallographic distinct O sites O（1）, O（2） and O（3） are 100%, 91.7% and 25%, respectively, consistent with experiments. All configurations are related to each other by one of 12 symmetry operations of P213 space group, suggesting that the structure observed experimentally may be interpreted as a time and spatial average of these local or inherent structures.     

Influence of High Atomic Hydrogenation on the Electronic Structure of Zigzag Carbon Nanotubes： A First-Principles Study

Using density functional theory, we study high hydrogenated zigzag single-walled carbon nanotubes from （7,0） to （11,0）. Two structure transitions are classified： type A is a metallic transition and type B is a ＂semiconductive transition＂ according to the energy band structure. The charge density transforms only at the C-C bonds without hydrogenated sites. The sp^3 hybridization is mainly enhanced for all the C-C bonds in the vertical axial direction for type-A configurations, and the sp^3 hybridization mainly increases for all C-C bonds along the axial direction for the type-B case.     

Bulk Modulus and Electronic Band Structure of ZnGa2Xa （X=S,Se）： a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa2X4 （X = S, Se）. We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2Xa by fitting the Birch-Murnaghan＇s equation of state. The extended Cohen＇s empirical formula agrees well with our ab initio results.     

First Principles Study on Electronic Structures of Mn^2＋：CdMoO4 Crystals

Electronic structures of the Mn^2＋ ：CdMoO4 crystal axe studied within the framework of the fully relativistic self-consistent Dirac Slater theory, using a numerically discrete variation （DV-Xα） method. The calculated results indicate that the 3d states of Mn have donor energy level in the forbidden band of CdMoO4 crystal. The O^2- transition energy of O 2p→Mn 3d is 3.12eV under excitation corresponding electronic transition being O^2-＋Mn^2＋→↑hvex=3.12 eV O^-- ＋Mn^＋→↑hvem O^2-＋Mn^2＋. It is predicted that the wavelength of emission should be located in the range of the 500-600nm. Thus the 500-600mm emission bands peaking at 550nm （2.25eV） of CdMoO4 crystal under excitation may be related to the Mn-like dopant ion in CdMoO4 crystal.     

A density functional theory study on the adsorption of CO and O2 on Cu-terminated Cu2O （111） surface

The adsorptions of CO and 02 molecules individually on the stoichiometric Cu-terminatcd Cu20 （111） surface are investigated by first-principles calculations on the basis of the density functional theory. The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of-1.69 eV, whereas the 02 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cul site, and has an adsorption energy of -1.97 eV. From the analysis of density of states, it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate. The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption, and overlaps substantially with bands of the adsorbed CO molecule. There is a broadening of the 2π orbital of the 02 molecule because of its overlapping with the Cu 3d orbital, indicating that strong 3d-2π interactions are involved in the chemisorption of the 02 molecule on the surface.     

First-principles study of the structural,mechanical and electronic properties of ZnX204 （X=Al,Cr and Ga）

This paper performs first-principles calculations to study the structural, mechanical and electronic properties of the spinels ZnA1204, ZnGa2O4 and ZnCr2O4, using density functional theory with the plane-wave pseudopotential method. Our calculations are in good agreement with previous theoretical calculations and the available experimental data. The studies in this paper focus on the evolution of the mechanical properties of ZnAl2O4, ZnGa2O4 and ZnCr2O4 under hydrostatic pressure. The results show that the cubic phases of ZnAl2O4, ZnCa2O4 and ZnCr2O4 become unstable at about 50 GPa, 40 GPa and 25 GPa, respectively. From analysis of the band structure of the three compounds at equilibrium volume, it obtains a direct band gap of 4.35 eV for ZnA1204 and 0.89 cV for ZnCr2O4, while ZnGa2O4 has an indirect band gap of 2.73 eV.     

插层化合物LixTiS2中Li离子-空位二维有序结构稳定性的第一性原理研究

根据局域密度近似下的密度泛函理论，用第一性原理方法对TiS₂，LiTiS₂和Li_xTiS₂(x=1/4, 1/3, 1/2, 2/3, 3/4)有序系统进行了几何优化和总能量计算.将计算结果与已有的实验和理论结果进行了对比，得到的归一化结构参量增量Δa₀和Δc₀随离子浓度单调地增加，与实验结果符合较好.Li_{关键词： x}TiS₂')" href="#">Li_xTiS₂ 有序结构 第一性原理计算 密度泛函理论     

Structures,stabilities, and electronic properties of F-doped Sin （n=1～12） clusters：Density functional theory investigation

The geometries, stabilities, and electronic properties of FSin （n=1～12） clusters are systematically investigated by using first-principles calculations based on the hybrid density-functional theory at the B3LYP/6-311G level. The geometries are found to undergo a structural change from two-dimensional to three-dimensional structure when the cluster size n equals 3. On the basis of the obtained lowest-energy geometries, the size dependencies of cluster properties, such as averaged binding energy, fragmentation energy, second-order energy difference, HOMO–LUMO （highest occupied molecular orbital–lowest unoccupied molecular orbital） gap and chemical hardness, are discussed. In addition, natural population analysis indicates that the F atom in the most stable FSin cluster is recorded as being negative and the charges always transfer from Si atoms to the F atom in the FSin clusters.     

Electronic Raman Scattering in Graphene

Linear dispersion near the Dirac points in the band structure of graphenes can give rise to novel physical properties. We calculate the electronic contribution to the Raman spectra in graphenes, which also shows novel features. In the clean limit, the Raman spectrum in the undoped graphene is linear （with a universal slope against impurity scattering） at low energy due to the linear dispersion near the Dirae points, and it peaks at a position corresponding to the van Hove singularity in the band structure. In a doped graphene, the electronic Raman absorption is forbidden up to a vertical inter-band particle-hole gap. Beyond the gap the spectrum follows the undoped case. In the presence of impurities, absorption within the gap （in the otherwise clean case） is induced, which is identified as the intra-band contribution. The Drude-like intra-band contribution is seen to be comparable to the higher energy inter-band Raman peak. The results are discussed in connection to experiments.     

Adsorption and diffusion of OH on Mo modified Pt(111) surface: First-principles theory

A first-principles study of adsorption and diffusion of OH on Pt and PtMo(111) surfaces is described. It confirms that the dissociation of water is much easier on PtMo than on pure Pt. Furthermore, we also found that OH binds most strongly at Mo atop site with adsorption energy of −3.32 eV, which is ∼1 eV stronger than binding to the pure Pt(111) surface. OH is much more localized on the PtMo alloy surface than on pure Pt. Both the stranger bond and the higher localization of OH contribute to the enhanced fuel cell performance with PtMo electrodes compared to pure Pt.     

Energy level alignment between C60 and Al using ultraviolet photoelectron spectroscopy

The energy level alignment between C₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C₆₀ and Al, C₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C₆₀ and Al. The barrier height of electron injection from Al to C₆₀ is 0.11 eV, which is smaller value than that of hole injection.     

Origin of HfO2/GaAs interface states and interface passivation: A first principles study

First principles calculations of HfO₂/GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO₂ and GaAs surfaces. We find that a model neutral interface (HfO₂ and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell) removes gap states due to the balance of the interface charge. F and H can neutralize the HfO₂/GaAs interface resulting in useful band offsets, thus becoming possible candidates to passivate the interface states.     

Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)

First principles calculations of clean and adsorbate-covered surfaces of Si(001) and Ge(001) are reported. Chemical trends in the adsorption of ordered Na, K, Ge, As, Sb, S, Se and Cl overlayers are discussed. The calculations are based on the local-density approximation and employ non-local, norm-conserving pseudopotentials together with Gaussian orbital basis sets. The semi-infinite geometry of the substrate is properly taken into account by employing our scattering theoretical method. From total-energy minimization calculations we obtain optimal surface reconstructions which show asymmetric dimers for Si(001), Ge(001) and Ge:Si(001). For As:Si(001), Sb:Si(001) and Sb:Ge(001), we find symmetric adatom dimers in the equilibrium geometries. S or Se adlayers are found to be adsorbed in bridge positions forming a (1×1) unit cell with a geometry very close to the configuration of a terminated bulk lattice. Cl atoms adsorb on top of the dangling bonds of symmetric Si dimers residing in the first substrate-surface layer. Our calculations for Na:Si(001) and K:Si(001) confirm valley-bridge site adsorption for half monolayer coverage. For full monolayer alkali-metal coverage, adsorption in pedestal and valley-bridge positions is found to be energetically most favourable. The calculated optimal adsorption configurations are in excellent agreement with a whole body of recent experimental data on surface-structure determination. For these structural models, we obtain electronic surface band structures which agree very good with a wealth of data from angle-resolved photoemission spectroscopy investigations.     

Band bending and band alignment at HfO2/HfSixOy/Si interfaces

Band bending and band alignment at HfO₂/SiO₂/Si and HfO₂/Hf/SiO₂/Si interfaces were investigated using X-ray photoelectron spectroscopy. After Hf-metal pre-deposition, a 0.55 eV band bending in Si and a 1.80 eV binding energy decrease for Hf 4f and O 1s of HfO₂ were observed. This was attributed to the introduction of negative space charges at interface by Hf pre-deposition. Band bending decrease and synchronous binding energy increases of O 1s and Hf 4f for HfO₂ were observed during initial Ar⁺ sputtering of the Hf pre-deposited sample. This was interpreted through the neutralization of negative space charges by sputtering-induced oxygen vacancies.     

First-Principles Calculations of Structures and Electronic Properties of Solid Pentaerythritol under Pressure

Structures and electronic properties of the pentaerythritol （PE） crystal under volume compression up to 0.85V0 are studied by E - V fitting method using density functional theory （DFT）. The compression dependences of the cell volumes, lattice constants, and molecular geometries of solid PE are presented and discussed. It is found that the solid PE presents anisotropy along a- and c-axes, and the c axis is the most compressible. Decreasing anisotropy ratio （c/a） with elevating compression suggests an enhancement of the vdW interaction with increasing compression. The C-C and C-H bonds are significantly reduced under compression, which may be related to the sensitivity. The solid PE has indirect band gap （X - G） in the range of the researched compression and the band gap is decreased with compression.     

Electronic properties of the single-domain Li/Si(001) surface

Received: 14 October 1996/Accepted: 17 December 1996     

Electronic structure and magnetism of V monolayer on a TM(0 0 1) (TM=Cr,Mo, W) surfaces: First-principles calculations

We investigated the electronic structure and magnetism of V monolayer (ML) on a TM(0 0 1)(TM=Cr, Mo, W) surface, using the full potential linearized augmented plane wave method based on density functional theory. General gradient approximation is used for exchange-correlation potential. The magnetic moments of the V ML's are calculated to be 1.33, 1.35, and 1.30 μ_B on Cr(0 0 1), Mo(0 0 1), and W(0 0 1) surfaces, respectively. All of the TM surfaces are coupled antiferromagnetically to the V monolayer and their magnetic moments are calculated to be −1.01, −0.26 and −0.17 μ_B for Cr, Mo and W substrates, respectively.     

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/Al_xGa_1−xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated.