Determination of trap parameters by simultaneous measurement of thermostimulated luminescence and thermostimulated conductivity

A method is proposed for processing of thermostimulated luminescence (TSL) curve in the presence of thermostimulated conductivity (TSC) in which no assumption is made as to the smallness of dn_c/dt (n_c is the conduction electron concentration). Results of the theory are applied to study of ZnSAg, Al and ZnSCu single crystals, in which elementary traps are revealed, and their activation energy and the value of the frequency factor determined. For ZnSCu the radiative transition recombination section is calculated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 94–101, June, 1977.     

Photo- and cathodoluminescence investigation of ZnO films

Photo- and cathodoluminescence spectra of ZnO films obtained by magnetron sputtering and annealed at different temperatures have been studied. The effect of irradiation in a scanning electron microscope on the cathodoluminescence spectra of these films is investigated. It is shown that even relatively small irradiation durations result in a noticeable change in signal intensity. Both signal enhancement and reduction can occur depending on the annealing temperature. Data obtained are explained by defect formation and rearrangement stimulated by electron irradiation.     

Short-wavelenght luminescence and thermostimulated processes in single crystals of BeO

The results of a study of thermostimulated luminescence and recombination processes in pure and impure single crystals of BeO are reported. The origin of the trapping and recombination centers, their parameters (activation energies, frequency factors), the recombination schemes and the TL spectra were determined. It was shown that, in the BeO single crystals during electron and hole recombinations, the excitation of the intrinsic luminescence band at 4.9 eV proceeds and its characteristics inherit no properties from the recombination centers.     

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er³⁺ and N⁺ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er³⁺ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO_6−xN_x octahedron complexes. With the increase of the annealing temperature (T_a), the Er³⁺ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.     

Influence of S incorporation on the luminescence property of ZnO nanowires by electrochemical deposition

Sulfur-doped zinc oxide (ZnO) nanowires have been successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. X-ray diffraction and the selected area electron diffraction results show that the as-synthesized nanowires are single crystalline and have a highly preferential orientation. Transmission electron microscopy observations indicate that the nanowires are uniform with an average diameter of 120 nm and length up to several tens of micrometers. Room-temperature photoluminescence is observed in the doped ZnO nanowires, which exhibits a violet emission and blue emissions besides the typical photoluminescence spectrum of a single crystal ZnO.     

Photo- and cathodoluminescence of the cetylpyridinium chloride: ZnO nanocomposites

The cathodoluminescence and photoluminescence (PL) spectra of ZnO nanoparticles (NPs) embedded into the cetylpyridinium chloride (CPCL) matrix were studied. The composites were obtained by drying an aqueous suspension of CPCL and ZnO NPs, with NaCl and with NaOH additives. We observed that only NaOH addition lead to a significant increase in the PL intensity which we attribute to the surface chemistry of the ZnO NPs. We propose that thin ZnOH₂ and Na₂ZnO₂ layers form on the surface of the NPs; these layers present an increased number of oxygen vacancies, which act as emitting centres.     

Electrowetting on ZnO nanowires

In this paper, we study the electrowetting character on ZnO nanowires. We grow the ZnO nanowires on indium tin oxide (ITO) by a hydrothermal method, and the ZnO nanowires surface is further hydrophobized by spin-coating Teflon. Such a prepared surface shows superhydrophobic properties with an initial contact angle 165°. When the applied external voltage between the ITO and the sessile droplet is less than 50 V, the contact angle continuously changed from 165° to 120°, and exhibits instant reversibility. For a slightly higher voltage, a mutation of the contact angle changing to 100° was observed and the contact angle was not reversible after removing the applied voltage, which indicates a transition from non-wetting state to wetting state. Further increasing of the applied voltage, the apparent contact angle decreased to an invariable value 70°, and electrical breakdown emerged synchronously.     

Nanoindentation of vertical ZnO nanowires

We report the experimental observations of buckling instabilities of vertical well-aligned single-crystal ZnO nanowires prepared on ZnO:Ga/glass templates. It was found that critical buckling load and buckling energy of the ZnO nanowires were 215 μN and 3.69×10⁻¹¹ J, respectively. It was also found that Young's modulus of the ZnO nanowires were 232 and 454 GPa while critical buckling strains were 0.35% and 0.18% when fixed–fixed column mode and fixed–pinned column mode were used, respectively.     

Mechanical properties of ZnO nanowires

Semiconductor nanowires are unique as functional building blocks in nanoscale electrical and electromechanical devices. Here, we report on the mechanical properties of ZnO nanowires that range in diameter from 18 to 304 nm. We demonstrate that in contrast to recent reports, Young's modulus is essentially independent of diameter and close to the bulk value, whereas the ultimate strength increases for small diameter wires, and exhibits values up to 40 times that of bulk. The mechanical behavior of ZnO nanowires is well described by a mechanical model of bending and tensile stretching.     

Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors

A series of undoped and rare earth (Dy, Yb, Nd, Pr, Gd, La, Sm and Er) doped ZnO electroluminors have been prepared and their photo-(PL) and electroluminescence (EL) spectra at different concertrations of rare earth ions have been investigated. PL and EL spectra of undoped electroluminors consist of three peaks. Due to the addition of the rare earth ions these peaks are shifted either to the longer or to the shorter wavelength side. The intensities are also either decreased or increased. Experimental results favour the donor—acceptor model for this system.     

Ferromagnetism of V-doped ZnO nanowires

The geometry structures,electronic structures,and magnetic properties of Zn46V2O48 nanowires are studied by density functional theory(DFT) calculations.We find that the ferromagnetic(FM) coupling is more stable for six configurations of Zn46V2O48 nanowires,and is mediated by neighboring O as evidenced from the strong hybridization of V 3d and O 2p states,exhibiting strong spin polarization.The spin polarization is found to be 100% in the Zn46V2O48 nanowires,which confirms that it is a half-metallic ferromagnet and very suitable for the injection of the spin carriers,which shows that Zn46V2O48 nanowire is one of the ideal materials to realize spin electronic devices.At the same time,the magnetic coupling mechanisms of Zn46V2O48 nanowires are analyzed with V 3d and O 2p orbitals and their magnetic moments mainly come from the contributions of the unpaired electrons of V 3d orbitals.The above results provide a theoretical basis for the preparation of 3d transition metal-doped ZnO nanowire materials.     

Dielectrophoretic assembly of ZnO nanowires

The synthesis of zinc oxide （ZnO） nanowires is achieved by vapor phase transportation （VPT） method. The designed quartz tube, whose both ends are narrow and the middle is wider, is used to control the growth of ZnO nanowires. Dielectrophoresis （DEP） method is employed to align and manipulate ZnO nanowires which are ultrasonic dispersed and suspended in ethanol solution. Under the dielectrophoretic force, the nanowires are trapped on the pre-patterned electrodes, and further aligned along the electric field and bridge the electrode gap. The dependence of the alignment yield on the applied voltage and frequency is investigated.     

Absorption and thermostimulated electron emission and luminescence of LiF crystals bombarded with alpha particles

The paper gives the results of measuring the absorption and thermostimulated electron emission and luminescence in the same kind of LiF crystals irradiated with X-rays and alpha particles. The different method of excitation has the consequence that the curves of the three phenomena are to a certain extent different. The possible causes of these differences are discussed.The author would like to thank K. Listoová and Z. Klímová for carefully performing the measurements.     

Preparation and photoluminescence of Sc-doped ZnO nanowires

We demonstrate bulk synthesis of single-crystal Sc-doped ZnO nanowires by using (Sc+Zn) powders at . These mass nanowires are characterized through X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction, and high-resolution TEM, which have uniform diameters of about 40 nm and microns of several decades in length. The growth of ZnScO nanowires is suggested for self-catalyzed vapor–liquid–solid. In particular, PL spectra of these nanowires show emission peaks that intensely shift to long wavelength with increasing Sc and the doping quantity is found responsible for the different characteristics, in which PL mechanism is explained in detail.     

The luminescence of ZnO ceramics

The luminescence properties of ZnO ceramics with grains 100–5000 nm sintered by different techniques from nanopowders were studied. The luminescence decay times were compared with that obtained for ZnO single crystal. The temperature dependence of non-exponential decay of defect luminescence (2.0–2.6 eV) was measured in wide time, intensity and temperature range. The luminescence decay kinetic at T ≤ 20 K shows the decay close to I(t) ～ t^?1 dependence. At temperature region 50–250 K the decay kinetics is more complicate since the TSL was observed in this temperature region. It is shown that the luminescence properties of NP and ceramics strongly depend on defect distribution on grains surface and the volume/surface ratio determine the luminescence decay in ZnO nanostructures and ceramics.