冲击波作用下CHBr3/NaCl界面热弛豫特性研究

非透明材料冲击温度测量是通过对界面光辐射历史的观察实现的 ,因此对界面光辐射历史的研究是非透明材料冲击温度测量的基础。但由于冲击阻抗的失配导致界面上出现波的反射而引起温度的变化与界面热流动产生的温度变化交杂在一起 ,以及过程的瞬时性 ,使得对这一过程的实验研究显得非常困难。设计了一种界面波阻抗近似相同的特殊实验装置 ,用光辐射测量技术研究了在冲击压缩下CHBr3/NaCl界面的热弛豫过程。实验结果和理论分析表明CHBr3/NaCl界面的热弛豫时间在纳秒量级 ,与Grover等人的理论预估一致。     

冲击状态下仍透明材料的冲击温度测量

 在对冲击作用下界面热传导特性进行分析的基础上,提出了一种在透明材料前加一高发射率特殊填层材料,通过其与透明材料的热平衡温度来确定透明材料的冲击温度的测量方法,并对氯化钠单晶在41 GPa压力下的冲击温度进行了测量。初步实验结果表明,用这种方法测量透明材料的冲击温度是可行的。     

利用液体夹心法测量LiF单晶高压热导率

提出了液体夹心法热导率测量技术, 采用CHBr3液体作为夹心材料实现了样品/窗口界面的理想接触, 并将动载荷作用下的夹心法高压热导率实验测量压力下限拓展至40 GPa, 为绝缘介电晶体高温高压热导率测量提供了技术支持. 实验利用平面碰撞和DPS测试技术, 结合液体夹心法实测了LiF单晶高压热导率数据, 对现有热导率理论模型进行了研究和探讨, 结果显示, 在γ/γ0=(ρ0/ρ)2时, 修正后的Roufosse理论公式与实验数据符合较好, 这一研究结果为非透明材料冲击波温度测量中的热传导修正提供了实验数据和理论模型。     

冲击压缩下NaCl单晶光辐射特性的研究

 用光辐射技术研究了氯化钠单晶冲击压缩下的光辐射特性,得到了在45～70 GPa压力范围内NaCl单晶的光谱吸收系数随冲击压力的变化,把这一结果与Kormer等人的结果比较,发现在较低压力下与Kormer等人的结果相差较少,当压力较高时实验结果比Kormer等人的结果约大1个数量级。并用实验结果计算了电子迁移率随冲击温度的变化,得到的结果与Ziman理论基本一致,从而解决了一直来Kormer的实验结果与Ziman理论不一致的困难,进一步证明了Ziman理论的正确性。     

利用液体夹心法测量LiF单晶高压热导率简

提出了液体夹心法热导率测量技术,采用CHBr3液体作为夹心材料实现了样品/窗口界面的理想接触,并将动载荷作用下的夹心法高压热导率实验测量压力下限拓展至40GPa,为绝缘介电晶体高温高压热导率测量提供了技术支持.实验利用平面碰撞和DPS测试技术,结合液体夹心法实测了LiF单晶高压热导率数据,对现有热导率理论模型进行了研究和探讨,结果显示,在γ/γ0=(ρ0/ρ)2时,修正后的Roufosse理论公式与实验数据符合较好,这一研究结果为非透明材料冲击波温度测量中的热传导修正提供了实验数据和理论模型.     

氟化锂和蓝宝石单晶冲击消光及其对辐射测温的影响

采用冲击波压缩原位光源技术结合时间分辨多波长高温计测量,研究了氟化锂和蓝宝石单晶样品的冲击消光现象,实验压力范围50~183GPa,中心波长覆盖254~800nm。结果表明,氟化锂单晶样品在实验压力下透过率变化不大,对界面温度的拟合值影响不明显,只是使表观发射率略有下降;当压力低于90GPa时,蓝宝石的消光情况同氟化锂接近,对界面温度的拟合影响也不明显;而当压力高于99GPa时,蓝宝石呈现明显的消光衰减现象,实验测定的消光系数随压力增加而增加,与波长间呈反比关系,与文献报道250GPa高压消光特性一致。研究还发现,蓝宝石窗高压消光行为对界面温度的测量存在较大的影响,使得拟合温度明显偏低。本文研究对发展非透明材料冲击测温技术具有一定的参考价值。     

氟化锂和蓝宝石单晶冲击消光及其对辐射测温的影响

采用冲击波压缩原位光源技术结合时间分辨多波长高温计测量,研究了氟化锂和蓝宝石单晶样品的冲击消光现象,实验压力范围50～183了GPa,中心波长覆盖254～800 nm.结果表明,氟化锂单晶样品在实验压力下透过率变化不大,对界面温度的拟合值影响不明显,只是使表观发射率略有下降;当压力低于90GPa时,蓝宝石的消光情况同氟化锂接近,对界面温度的拟合影响也不明显;而当压力高于99 GPa时,蓝宝石呈现明显的消光衰减现象,实验测定的消光系数随压力增加而增加,与波长间呈反比关系,与文献报道250 0Pa高压消光特性一致.研究还发现,蓝宝石窗高压消光行为对界面温度的测量存在较大的影响,使得拟合温度明显偏低.本文研究对发展非透明材料冲击测温技术具有一定的参考价值.     

金属冲击温度的辐射法测量问题

 金属的冲击温度及熔化温度测量对构建其完全状态方程具有重要意义。简要综述了用于金属冲击温度及熔化温度辐射法测量的一维热传导理想界面模型和非理想界面模型,并着重对模型中明示或隐含的关键假定的合理性、影响金属冲击温度与熔化温度结果的主要因素进行了分析、讨论,以期对实验数据有一个合理的评估。还讨论了求解理想和非理想界面模型一维热传导方程界面温度时所隐含的冲击压缩下热导率不随温度而变、冲击压缩下金属样品/窗口界面辐射的灰体假定,以及窗口材料的透明性、非理想界面模型中表观界面温度的修正、动载条件下金属高压熔化温度的测量、界面的非Flourier热传导等问题。分析结果表明,目前采用辐射法测量大致可以得到冲击温度,在发生熔化的情况下可获得熔化温度,但离精密测量的要求还有较大差距。     

固定温度界面对相变波传播规律的影响

冲击载荷作用下,相变波的传播及相互作用是一热力耦合过程。采用理论和实验相结合的方法研究了固定温度界面对相变波传播特性的影响。首先基于形状记忆本构模型和一维特征线理论分析了各类间断面和温度界面的基本相互作用规律,发现温度界面对相变波的作用与相变波强度及界面两侧温度的相对高低有关;然后进行了相变波在具有固定温度界面的形状记忆TiNi杆中的传播实验,并实时测量了相变波传播过程中的温度变化。实验结果与理论分析基本一致,冲击载荷作用下相变波不仅是物质间断面,还是移动的温度界面。     

冲击压缩下金属/窗口界面热弛豫过程的热阻模型研究

 研究了金属/窗口界面在冲击压缩下的热弛豫过程。从热阻模型出发，给出了弛豫时间常数与界面热阻以及材料热输运系数之间的函数关系。讨论了本文模型与Grover和Urtiew模型之间的关系。对两种不同的实验记录图像进行了解释，对产生界面热阻的原因进行了初步分析。     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Etude par diffraction neutronique des solutions solides K1−xBixF1+2xetRb1−xBixF1+2x

Bragg neutron diffraction studies have been carried out on the fluorite type solid solutions K_1?xBi_xF_1+2x (0.50 ? × ? 0.70) and Rb_1?xBi_xF_1+2x (0.50 ? × ? 0.60). The distribution of the fluorine atoms between normal and interstitial sites is given as a function of substitution rate. A substition mechanism is proposed. Electrical and NMR results on one side and structural data on the other side are correlated. A study of the background as a function of temperature has allowed to determine the static origin of its modulation. By inelastic neutron diffusion, it has been shown that the number of carriers is weak, which involves a high mobility.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.