Doppler-broadening measurements of microvoids at the Au/GaAs interface

Recent positron lifetime studies made on the Au/GaAs interface with an applied electric field returning a significant fraction of bulk implanted positrons to the interface have revealed the presence of microvoids( 1 nm diameter) at the interface. In this work an attempt has been made to study these microvoids by observing the Doppler broadening on the annihilation radiation coming from them. This is done both by observing theS-parameter as a function of applied bias and by applying the generalized least-squares method to the deconvolution of the annihilation radiation lineshape. The general conclusion is that the Doppler-broadened data are consistent with the majority of positrons trapping into microvoids, probably associated with grain boundaries. The data suggest that these open volume defects are more associated with the Au film rather than the Au-Ga alloyed interfacial region.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Structural and IR studies on Cu-Ti mixed ferrite

The sensitivity of the positron to the internal electric fields in good quality thin (100 nm) Molecular Beam Epitaxy (MBE)-grown layers is experimentally demonstrated. Both a thin intrinsic layer grown on a p-type substrate and a highly n-doped profile buried in intrinsic silicon form effective barriers to positron diffusion although no defects can be detected. We also extract, from a full treatment of the positron diffusion, a quantitative estimate of the concentration, below the detection limits of other methods, of large vacancy clusters in a thick (680 nm) film.     

On the origin of the intermediate component in the positron lifetime spectra in polymers

We have carried out an investigation of the nature of the 1 ns intermediate component in the positron time annihilation spectra of five polymers (atactic and isotactic polypropylene, polymethylmethacrylate, teflon, and polyethylene), using the magnetic quenching technique at high fields (1.5–3 T), coupled to lifetime spectroscopy. The results indicate that this component comes from the decay of a positron-electron bound system, different from that associated with the longest lifetime component. Therefore, two different Ps-like systems must be considered in the investigated polymers.     

Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation

The crystallinity of synthesized and natural crystals of diamond was characterized by double-crystal X-ray diffraction and positron annihilation. The two-dimensional angular correlation of annihilation radiation and positron lifetime measurements revealed that in natural crystals positroniums are formed in a high fraction. The synthesized crystal Ib showed both an extremely small width for the diffraction and a positron lifetime spectrum with a single component of the lifetime of 115 ps. In contrast, the natural diamonds contain a long-lived component of lifetime longer than 2 ns. The diffusion length of positrons was also measured by a variable-energy positron beam. In the synthesized crystal IIa, a diffusion length of about 100.8 nm was observed.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Real-time measurement and control of particle-number density and size of the detonation products of lead azide

Time-resolved measurement and modeling of the number density and size of lead particles produced following the detonation of Lead Azide (LA) are presented. Particles expanding freely into vacuum through a supersonic nozzle or interacting with a barrier placed above the LA sample are monitored via attenuation of laser beams at 0.67, 1.3 and 10.6 µm. The attenuation depends on the conditions of expansion, but is always much more pronounced at 0.67 µm and 1.3 µm. From the ratio between the attenuations at 0.67 µm and 10.6 µm, the radius and number density of the particles are calculated applying Beer's law and Mie's theory. It is found that 20–90 µs following the detonation the attenuation at 32–36 mm above the LA sample is due to particles with radii of 0.9, 0.7 and 0.1 µm for free expansion into vacuum through the nozzle or near the barrier, respectively. Also, the expansion through the nozzle results in a transparent medium above the nozzle exit for the first few µs following the detonation. The effect of the nozzle is attributed to the fact that the velocity of the expanding detonation products is supersonic, which leads to compression and heating in the throat region, in contrast to the more familiar phenomenon of cooling at subsonic velocities. The dynamics of particles expanding under the different conditions and the mechanism of size reduction and elimination of particles is discussed.     

Demonstration of positron re-emission microscopy using an immersion objective

Hulett et al. have suggested forming a magnified image of the positrons re-emitted from a surface having a negative positron affinity as a new kind of microscope, the positron re-emission microscope (PRM). We have built an immersion objective (cathode lens) for the PRM and obtained the first images using a Ni film back-illuminated with 5 keV positrons from a brightness enhanced slow positron beam. The magnification at the detector plane is 330x and the resolution is better than 1m. With the addition of a projector lens the magnification and resolution should be sufficient to observe defect structures and large molecules on the surface.     

Transmission of positrons with aβ + energy distribution through thin films

The transmission through Al foils of isotropically implanted positrons from a²²Na ⁺ source has been measured. It is shown that the transmission is reasonably well-described using an exponential profile once backscattering is accounted for, except for thicknesses below approximately 7 mg/cm². Below this thickness, the measured transmission is slightly less than that predicted by the exponential profile. Such a deviation has previously been observed for collimated positrons, suggesting that the implantation profile has no significant dependence on the spatial distribution of the incident positrons. This deviation is critical for the proper interpretation of positron lifetime experiments on thin films using a conventional positron lifetime spectrometer.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

Thermodynamic properties of the spin-Peierls transition in CuGeO3

We present an investigation of the spin-Peierls transition atT _SP=14.5 K in polycrystalline CuGeO₃ through specific-heat and thermal-expansion measurements. Clear second-order phase-transition anomalies are found in both properties atT _SP, although only a small entropy of S0.1 Rn2 is released at the transition. Most of the entropy is released atT _SP<T<150 K, where the temperature dependence of the magnetic contribution to the specific heat as well as the thermal expansion exhibit extrema atT ^*40 K. These are caused by one-dimensional antiferromagnetic fluctuations along the Cu chains, possibly accompanied by structural fluctuations. Using Ehrenfest's relation, a hydrostatic pressure coefficient (T _SP/_p)_p0 (0.45±0.06) K/kbar is derived.     

Negative mass cyclotron resonance maser

Physical principles, design and operation characteristics of a negative mass cyclotron resonance maser inp-type germanium are considered in this paper. The formation of anisotropic inverted distributions of negative effective mass heavy holes in strong electric and magnetic fieldsE H [001], resulting in negative conductivity in the millimetre and submillimetre wavelength ranges, is discussed. The generation is observed at 0.9 to 8mm in low compensated germanium samples with the hole concentration rangeN ₀ 2×10¹² to 2×10¹⁴ cm^–3 at low temperaturesT 25 K in electric fieldsE 40 to 350Vcm^–1. The maser frequency is tuned by the magnetic field corresponding to a cyclotron resonance frequency of carriers with an effective mass ofm _c 0.4m ₀. The spectral width of the emission in single mode operation does not exceed several megahertz. A pulse duration of 1 to 200 s and a repetition rate off _rep 1 to 200 Hz has been obtained limited by sample heating. Possibilities of improving the maser characteristics inp-Ge as well as in other A_III B_v semiconductors and the perspectives of new frequency tuning methods due to the application of uniaxial stress and magnetic field are demonstrated.     

Structural phase transitions in ‘hcp’ C70 single-crystals

The thermal expansion of vapor-grownC ₇₀ single crystals ahs been investigated using high-resolution capacitance dilatometry from 5–380 K. Measurements were made both parallel and perpendicular to the hexagonalc-axis. Three first-order phase transitions which we associate with the consecutive disordering of theC ₇₀ molecules are observed upon heating at 280 K (long-axis spinning), 300 K (long-axis precession) and 355 K (quasi-free rotation), respectively. The highest-temperature transition exhibits a very large (50 K) thermal hysteresis. Powder and single-crystal X-ray diffraction show that the crystals are predominantly hexagonal-close-packed (HCP) with an idealc/a1.63 above 360 K andc/a1.84 at 295 K.     

Carrier lifetime in single-crystal PbS films

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, increases exponentially with decreasing temperature, with an activation energy of e O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below 160 ° K in the n-type films, does not depend on the temperature, while in the p-type films, decreases exponentially with an activation energy of 0. 11–0. 14 eV.Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.     

Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching

We present a study of pattern-transfer and etch-induced damage in photon-induced cryoetching. Features with effective radii as small as 100 nm have been formed in both bulk and layered GaAs/AlGaAs materials. A measurement of the photoluminescence of etch-defined deep- submicrometer structures material suggests that this form of etching results in minimal process-induced damage. Modeling of the luminescence vs feature size for these features shows that the luminescence is limited only by carrier diffusion and non-radiative surface recombination.     

Temperature dependence of positron annihilation characteristics on the surfaces of graphite powders

Positron lifetime measurements have been made on graphite powders, grafoils, and pyrolytic graphite crystals with different surface areas in the temperature range between 25° and 600 °C. Three positron lifetimes were found in these systems: a short-lived component (0.2 ns) due to positrons in the bulk; a component (0.45 ns) due to surface-trapped positrons; and a long-lived component (2 ns) ofo-Ps in the voids or the interfacial spaces of powders. Both bulk and surface positron lifetimes increase as a function of temperature. Correlations between the intensity of surface-trapped positrons and the surface area and between Ps formation and the surface area of graphite are found. The Ps formation probability increases as a function of temperature. A thermal desorption model interprets the emission process of Ps atoms from the surface of graphite to the vacuum and gives an activation energy of 0.23±0.02 eV.Preliminary results of this paper were presented at the March Meeting of American Physical Society, Los Angeles. Bull. Am. Phys. Soc.28, 347 (1983)     

Intense source of slow positrons from pulsed electron accelerators

A pulsed LINAC is used for pair production in a tantalum target of 2.5 radiation lengths in an energy range from 80 to 260 MeV. Several well-annealed tungsten vanes are placed immediately behind the target and thermalize a small fraction of the fast positrons. The slow positrons are extracted from the target region and magnetically guided over a distance of 17 m to the detector at the end of an S-shaped solenoid. Two Nal detectors with well-known detection efficiency are used to register the 511 keV annihilation-rays. To reduce pile-up effects 50 mm of Pb were placed in front of the detectors. At an average electron current of 1 A we could detect about 10⁷ slow positrons per second. The positron yield is proportional to the electron current, and shows an increase with the electron energy for our target. The positron energy distribution has a FWHM of 1.8 eV.     

Long-wave optical absorption in electron-bombarded GaAs

The absorption spectra of n- and p-type GaAs bombarded with 2-MeV electrons at T=300K were studied in the spectral range from 0.2 eV to Eg. It was found that shallow radiation-defect levels E_c – 0.01 eV and E_c + (0.06–0.1) eV were formed. The structureless character of the absorption in the region h < Eg in electron-bombarded gallium arsenide specimens was shown to be due to the distinctive features of photoionization of deep levels and the strong electron-phonon interaction in this material.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 93–97, July, 1981.     

Positron lifetime and 2D-ACAR studies of divacancies in Si

We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V₂) with the definite charge states, V ₂ ⁰ , V ₂ ^–1 or V ₂ ^–2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V ₂ ^– using a specimen containing oriented divacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

New parametric emissions in diatomic sodium molecules

By excitation of sodium vapor with an ultra-violet laser, tunable coherent emissions around 688 and 770 nm generated from diatomic sodium molecules have been observed for the first time. We demonstrate that the emission around 688 nm is due to an axially phase-matched four-wave-mixing process involving cascade emissions of 2.54 µm and 910 nm radiation from sodium dimers.     

Pressure dependence of the electric field gradient at Cd-impurities in the heavy rare-earth metals

The pressure dependence of the electric field gradient at Cd impurities in Gd, Tb, Dy, Ho and Er have been measured at room temperature.The average isotropic volume dependence is dlneq/dlnV –4.4 and no systematic trend within the RE series is observed. The rather large volume dependence can be explained if the screening charge distribution of the host ions is considered.On leave from Panjab University, Chandigarh, India     

Positrons and electron-irradiation induced defects in the layered semiconductor InSe

The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two stages. The first, starting after annealing at 150K, could be induced by the formation of complexes (V_In-Sn_In). The second stage, observed at temperatures T375K, is attributed to the dissociation of these complexes and subsequent annealing of the In vacancies.