辉光放电质谱法测定超高纯铜溅射靶材中痕量杂质元素及其相对灵敏度因子的求取北大核心CSCD

通过选择合适的同位素及分辨率,提出了辉光放电质谱法(GDMS)测定超高纯铜溅射靶材中39种痕量杂质元素的分析方法。对辉光放电过程中的参数进行了优化,条件如下:放电气体流量为450 mL·min^(-1),放电电流为2.00 mA,预溅射时间为20 min。由于高纯铜的GDMS标准样品极难获得,为提高痕量杂质元素的检测准确度,在现有的标准样品条件下,利用高纯铜标准样品只获得了与基体匹配的21种杂质元素的相对灵敏度因子(RSF),其余18种杂质元素的RSF只能按照仪器自带的标准RSF进行计算。参照美国材料与试验协会的标准ASTM F1593-08(2016)的TypeⅢ中的第2种方法计算33种杂质元素的检出限,而其他6种主要杂质元素因其含量高于仪器噪声水平而无法用此法得到检出限。用GDMS对超高纯铜溅射靶材样品进行了检测,主要杂质元素为硅、磷、硫、氯、铁、银,检出量为0.015~0.082μg·g^(-1),杂质总量小于1μg·g^(-1)。除锌、碲、金的检出限在10 ng·g^(-1)级外,其余元素的检出限能够达到ng·g^(-1)级,其中钍、铀的检出限甚至达到了0.1 ng·g^(-1)级,说明方法能够满足GB/T 26017-2010中的6N(99.9999%)超高纯铜溅射靶材的检测要求。     

直流辉光放电质谱法测定多晶硅中关键杂质元素的相对灵敏度因子

采用直流辉光放电质谱(dc-GD-MS)测定多晶硅中关键杂质元素的相对灵敏度因子(RSF).标样制作过程中主要是在连续通入氩气条件下将固定量的非标准多晶硅样品熔化,向硅熔体中均匀掺入浓度范围为1～30 μg/g的关键杂质元素(如B和P),采用快速固化法制成标样;再将制成的标准样品加工成一系列适合GD-MS扁平池(Flat Cell)的片状样品(20 mm×20 mm×2mm).采用二次离子质谱法(SI-MS)对标准样品中关键掺杂元素进行多次定量测定,取平均值作为关键杂质元素的精确含量.优化一系列质谱条件后,运用GD-MS对标样中关键掺杂元素的离子强度进行多次测定,计算平均结果,得到未校正的表观浓度,利用标准曲线法计算出关键杂质元素的相对灵敏度因子.     

直流辉光放电质谱法测定高纯二氧化锗中的16种杂质元素及其相对灵敏度因子的求取

取高纯GeO_2粉末5.00g(颗粒度小于30μm)5份,其中一份作为空白,其余4份中依次加入Li、Be、Mg、Al、Ti、V、Cr、Fe、Ni、Co、Cu、Zn、Sn、Sb、Tl、Pb等16种元素的标准溶液,使其浓度梯度为0,0.4,1.0,2.0,5.0μg·g~(-1),于烘箱中100℃烘干。充分研磨混匀后制得GeO_2粉末中含16种杂质元素的控制样品。取高纯铟按方法规定压制成直径约为15mm的In薄片。取5片铟薄片,取适量上述5个GeO_2控制样品分别置于铟薄片上,盖上数层称量纸后用手动压紧压实,使铟薄片上的控制样品的直径约为4mm,并分别进行直流辉光放电质谱法(dc-GD-MS)测定。选择放电电流为1.8mA,放电电压为850V,采用电感耦合等离子体质谱法(ICP-MS)测定控制样品中各杂质元素的含量,并将这些测定值作为标准值。将ICP-MS测定所得待测元素和基体元素的离子束强度比值为横坐标,以与其对应的信号强度为纵坐标绘制校准曲线,曲线的斜率即为各元素的相对灵敏度因子(RSF)值。所得16种元素的校准RSF(calRSF)值和仪器自带的标准RSF(stdRSF)值之间存在显著的差异,其比值大都在2～3之间。由此可见制备的一组GeO_2粉末控制样品不仅建立了各元素的工作曲线,而且获得了与基体相匹配的RSF值,解决了用GD-MS测定高纯GeO_2中16种杂质元素的问题。     

辉光放电质谱测量中的相对灵敏度因子研究

辉光放电质谱(GDMS)作为高纯金属和半导体材料分析的强有力工具在国内已得到了大量应用,该文简要介绍了GDMS的基本原理和国内外应用现状,对仪器测量条件的选择、测量重复性进行了详细研究,对于含量在1 mg/kg左右的杂质,测量的重复性将产生约1%～5%的不确定度;对不同金属基体的系列标准物质进行对比研究,发现对于基体相同的样品,杂质元素在较宽的浓度范围内可以使用同样的校正系数进行校正,大部分元素的线性相关系数达到0.999以上,但对于不同基体的样品,测量中仍存在明显的基体效应,一些元素,尤其是轻质量数元素的相对灵敏度因子(RSF)设定值存在较大的偏差,并不适合定量分析,但绝大部分不超过2倍误差,可以满足半定量分析的要求。通过对GDMS定量分析中关键因素的研究,认为相对灵敏度因子的校正是GDMS测量结果可溯源性的关键。     

辉光放电质谱法研究高纯氧化铋中19种元素的相对灵敏度因子

采用标准溶液加入法,往高纯氧化铋中加入混合标液,烘干并研磨均匀,制备了5个高纯氧化铋的控制样品。在挑取适量的粉末样品压在高纯铟薄片上,建立了辉光放电质谱法(GDMS)研究高纯氧化铋中的Mg、Al、Ca等19个元素相对灵敏度因子的方法。实验考察了放电参数和制样面积对基体信号强度和稳定性的影响,优化后的辉光放电电流为1.8 mA,放电电压为950 V,压在铟薄片上的高纯氧化铋直径约为6~8 mm。通过选择合适的同位素,在4000的中分辨率下测定即可消除质谱干扰。为了验证加标的准确性,采用电感耦合等离子体质谱仪(ICP-MS)对控制样品进行测定,所有元素的回收率都在80%以上。采用GDMS法测定5个控制样品并结合ICP-MS的测定值建立工作曲线,大部分元素的线性均达到0.995以上;除Al、Ga、Sb外,大部分元素的校准相对灵敏度因子(calRSF)和仪器自带的标准相对灵敏度因子(stdRSF)的比值都在1/2~2之间,说明GDMS的半定量分析不会有数量级的差别。但对于某些需要准确测定纯度的定量分析,则必须采用基体相匹配的RSF值进行校正。     

辉光放电质谱法测定高纯铟中痕量元素

采用辉光放电质谱法(GDMS)对高纯铟中铁、铜、铅、锌、铊、镉、锡等14种元素进行了测定,对仪器工作参数进行了优化,对预溅射过程时间的确定和质谱干扰的排除进行了讨论,结果表明,GDMS是目前具有足够灵敏度对高纯导电材料进行直接分析的有效手段。     

辉光放电质谱法在高纯材料分析中的应用

高纯材料是现代高新技术发展的基础,在电子、光学和光电子等尖端科学领域发挥着重要作用。采用固体样品直接分析的辉光放电质谱法(GDMS),在高纯金属、高纯半导体材料的痕量和超痕量杂质分析中有着非常广泛的应用。综述了GDMS法对高纯金属、高纯半导体材料进行的元素分析,并对分析过程中工作参数、溅射时间、干扰峰等因素的影响进行了阐述。同时,也详述了应用GDMS法对高纯金属钛、镉,高纯半导体硅,分别进行的痕量杂质元素分析,结果显示放电稳定性良好,典型元素含量的相对标准偏差均在较为理想范围内。GDMS应用前景广泛,未来,GDMS将在除固体样品之外的其他样品类型的分析领域中发挥重要作用。     

辉光放电质谱法测定核级石墨粉中痕量杂质

建立了直流辉光放电质谱法(DC-GDMS)测定核级石墨粉中痕量杂质元素的方法。用一定的压力将石墨粉镶嵌在高纯铟片上,形成一个直径约为5 mm的圆形石墨薄层,用铟片辅助石墨粉放电,实现了粉状样品直接检测。优化的实验条件为放电电流0.8 mA,放电电压1.2 kV,放电气体流速0.437 mL/min。用石墨粉标准样品(19J T61029)单点校准了仪器相对灵敏度因子,消除基体效应,实现15个关键杂质元素定量分析。方法检出限为5.0 ng/g,在单侧0.05显著性水平下,利用Student’s t检验,方法测定结果 t值均小于临界值,与标准值无显著性差异。相对标准偏差(RSD)均小于10%。本方法与电感耦合等离子体光谱法测定结果比较,相对误差在2.4%～17.4%之间。     

辉光放电质谱法测定稀土矿中的15种稀土元素

利用高纯铜粉与稀土矿石粉末均匀混合压片制样.混合15种高纯稀土氧化物制样建立标准工作曲线,校正15种稀土元素相对灵敏度因子,再进行定量分析.结果 表明,稀土元素工作曲线的线性方程相关系数R2均大于0.996,相对标准偏差(RSD)小于5％,满足定量分析要求.测定结果与电感耦合等离子体质谱法(ICP-MS)和电感耦合等离...     

辉光放电质谱技术应用进展

对辉光放电质谱(GDMS)在金属与半导体、非导体、薄层与深度分析、分子信息分析方面的应用和一些新装置、新方法进行了综述.着重介绍了近20年来我国学者在辉光放电质谱方面的成就,并结合国际上的报道对该领域的发展现状进行了总结.     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

辉光放电质谱法测定高纯材料中痕量硫杂质

准确测定并控制材料中杂质元素含量是发挥高纯材料性能不可或缺的环节。辉光放电质谱法(GDMS)是准确、快速、高灵敏分析高纯材料中痕量及超痕量硫的理想方法。对GDMS分析高纯铜和镍基高温合金中痕量硫的质谱干扰进行了讨论,优化了放电电流和放电电压,采用多种标准物质对硫的相对灵敏度因子(RSF)进行了校准和验证,并与二次离子质谱法(SIMS)进行分析结果比对,验证了GDMS定量分析结果的准确性和可靠性。     

The laser as an analytical probe in glow discharge mass spectrometry

A pulsed dye laser was used alone and in combination with an auxiliary glow discharge for diagnostic studies. We have compared the mass ablation rate and ion signal in high vacuum and in the presence of an ambient buffer gas. Laser pulse energy and repetition rate were studied over the analytical range of the system. The effect of ambient gas pressure on redeposition was determined for three different gases: helium, neon, and argon. The laser/auxiliary discharge system was also shown to have analytical utility for the analysis of nonconducting samples. Spectra are included to illustrate the enhancement of the laser atomization/discharge ionization scheme over laser atomization/ionization.Presented in part at the 1989 European Winter Conference on Plasma Spectrochemistry, Reutte, Austria     

Multielemental characterisation of cobalt by glow discharge quadrupole mass spectrometry

Multielemental determination and the assessment of purity of cobalt metal used in the preparation of Ni-based super-alloys have been carried out by glow discharge quadrupole mass spectrometry (GD-QMS). Relative sensitivity factors (RSF) generated from certified iron matrix reference samples (NIST 663 and 664 low alloy steel pin standards) could be used for the determination of different trace element constituents of the sample. Different wet chemical procedures were also carried out for the determination of the trace constituents in the sample. The GD-QMS results are in reasonably good agreement with those obtained from wet chemical procedures, validating the use of the RSF values generated on low alloy steel standards for the computation of trace element concentrations in cobalt metal. A variety of molecular ions formed through the reaction of cobalt (matrix) with the discharge gas (argon) were also detected.     

Evaluation of pulsed radiofrequency glow discharge time-of-flight mass spectrometry for precious metal determination in lead fire assay buttons

In this paper, an exploration of the capabilities and limitations of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (GD-TOFMS) for the determination of the precious metals Ag, Au, Pd, Pt and Rh in lead buttons obtained by Pb fire assay is reported on. Since the matrix consists almost entirely of lead (>99%), the occurrence of doubly charged Pb (Pb²⁺) ions can hinder accurate determination of Rh. This problem was counteracted by relying on the time-resolved formation of different ion types over the pulse period of the glow discharge, which allows discrimination against the Pb²⁺ ions. The formation of ArCu⁺ ions as a result of the use of a copper anode was assessed to pose no threat to the accuracy of the results obtained for the set of samples analyzed as its contribution to the total signal at m/z = 103 could be adequately corrected for. The method developed was evaluated in terms of accuracy and precision using a set of Pb button standards with analyte concentrations between 5 and 100 μg g⁻¹. For the purpose of validation, a 10 μg g⁻¹ standard was considered as a sample. Overall, an acceptable accuracy was obtained with a bias of <5% between the experimental results and the corresponding reference values, except for Au, for which a larger deviation occurred. Precision values (repeatability) of typically <5% relative standard deviation (RSD) (for N = 3) were obtained and the limits of detection (LODs) vary from ∼0.020 μg g⁻¹ for Ag to ∼0.080 μg g⁻¹ for Pt.     

Spectroscopic evaluation of a compact magnetically boosted radiofrequency glow discharge for time-of-flight mass spectrometry

A compact magnetically boosted radiofrequency glow discharge (GD) has been designed, constructed and its analytical potential evaluated by its coupling to a mass spectrometer (MS). Simple modifications to the original source configuration permitted the insertion of permanent magnets. Small cylindrical Nd–Fe–B magnets (∅ = 4 mm, h = 10 mm) were placed in an in-house-modified GD holder disc that allows easy and fast exchange of the magnets. The different processes taking place within the GD plasma under the influence of a magnetic field, such as sputtering, ionisation processes and ion transport into the MS, were studied using different GD operating conditions. Changes to the ionisation and ion transport efficiency caused by the magnetic field were studied using an rf-GD-TOFMS setup. A magnetic field of 60–75 gauss (G) was found not to affect the sputtering rates but to enhance the analyte ion signal intensities while decreasing the Ar species ion signals. Moreover, magnetic fields in this range were shown not to modify the crater shapes, enabling the fast and sensitive high depth resolved analysis of relatively thick coated samples (micrometre) by using the designed compact magnetically boosted rf-GD-TOFMS.

Model of microsecond pulsed glow discharge in hollow cathode for mass spectrometry

A new model for microsecond pulsed glow discharge in a hollow cathode and its afterglow is described. The model is based on the Monte-Carlo method together with a new method for electrical field calculation, which is based on some phenomenological laws of plasma behavior. The afterglow model uses continuity and Poisson equations. A qualitative agreement between the model results and results published in experimental and theoretical works is demonstrated. Some processes in the microsecond pulsed discharge in the hollow cathode, such as sputtering, ionization and transfer of sample, are investigated. The model is successfully used for the optimization of the operational parameters of the time-of-flight mass spectrometer with ionization by microsecond pulsed glow discharge in a hollow cathode.     

RF-pulsed glow discharge time-of-flight mass spectrometry for glass analysis: Investigation of the ion source design

Radiofrequency (RF) millisecond pulsed glow discharge (PGD) coupled to time-of-flight mass spectrometry (TOFMS) was investigated for direct elemental analysis of glass samples. Aiming at achieving highest elemental sensitivity, appropriate discrimination from polyatomics, and good crater shapes on glasses, a new Grimm-type GD chamber (termed from now “UNIOVI GD”, designed and constructed in our laboratory) was coupled to TOFMS, and the results compared with those obtained with the former GD design (here denominated as “GD.1”) of the initial RF-PGD-TOFMS prototype. The critical differences distinguishing the two GDs under scrutiny are the GD chamber thickness (15.5 mm for the GD.1 and 7 mm for the UNIOVI GD) and the “flow tube” which is inserted in the GD.1 and inexistent in UNIOVI GD.