Magnetic susceptibility and short-range order in iron pnictides: Anisotropic J1-J2 Heisenberg model

The electron spin relaxation times by piezoelectric and polar optical phonon scattering in GaAs are calculated using the formula derived from the projection-reduction method. The temperature, magnetic field, and electron density dependences of the relaxation time are investigated. The electrons are found to be scattered mostly by piezoelectric phonons at low temperatures and polar optical phonons at high temperatures. The electron density affects the magnetic field dependence of the relaxation time at low temperatures but have only slight affects at high temperatures.     

Modeling of the non-equilibrium effects by high electric fields in small semiconductor devices

For the purpose of the future theory of energy and momentum relaxation in semiconductor devices, the introduction of two temperatures and two mean velocities for electron and phonons is required. A new model, based on an asymptotic procedure for solving the generalized kinetic equations of electrons and phonons is proposed, which gives naturally the displaced Maxwellian at the leading order. After that, balance equations for the electron number, energy densities, and momentum densities are constructed, which now constitute a system of five equations for the chemical potential of electrons, the temperatures and the drift velocities. In the drift-diffusion approximation the constitutive laws are derived and the Onsager relations recovered.     

Theory of nonlinear effects in semiconductors with a nondiffusion approximation for acoustic phonons

Momentum and energy balance equations in impurity semi-metals and degenerate semiconductors are derived and investigated in a nondiffusion approximation for the acoustic phonons with arbitrary heating and entrainment of electrons and phonons taken into account. It was shown that the diffusion approximation is not satisfied even for relatively weak electrical fields. In cases of thermal entrainment and no heating of the phonons, cases are possible when the electron temperature becomes equal to and less than the lattice temperature, which is associated with radiation obtained from the energy field by electrons in the form of acoustic phonons at a point of acoustic instability. If mutual entrainment and heating of electrons and phonons occurs then the crystal boundaries are the main channel of energy and momentum relaxation. Necessary conditions delimiting the strong changes of all the galvano- and thermomagnetic effects at a point of acoustic instability are found in every specific case.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 11–16, November, 1990.     

Optical and intervalley scattering in quantized inversion layers in semiconductors

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E₀, E₁, E'₀) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.     

The kinetics of low-temperature electron-phonon relaxation in a metallic film following instantaneous heating of the electrons

The theoretical analysis of experiments on pulsed laser irradiation of metallic films sputtered on insulating supports is usually based on semiphenomenological dynamical equations for the electron and phonon temperatures, an approach that ignores the nonuniformity and the nonthermal nature of the phonon distribution function. In this paper we discuss a microscopic model that describes the dynamics of the electron-phonon system in terms of kinetic equations for the electron and phonon distribution functions. Such a model provides a microscopic picture of the nonlinear energy relaxation of the electron-phonon system of a rapidly heated film. We find that in a relatively thick film the energy relaxation of electrons consists of three stages: the emission of nonequilibrium phonons by “hot” electrons, the thermalization of electrons and phonons due to phonon reabsorption, and finally the cooling of the thermalized electron-phonon system as a result of phonon exchange between film and substrate. In thin films, where there is no reabsorption of nonequilibrium phonons, the energy relaxation consists of only one stage, the first. The relaxation dynamics of an experimentally observable quantity, the phonon contribution to the electrical conductivity of the cooling film, is directly related to the dynamics of the electron temperature, which makes it possible to use the data of experiments on the relaxation of voltage across films to establish the electron-phonon and phonon-electron collision times and the average time of phonon escape from film to substrate. Zh. éksp. Teor. Fiz. 111, 2106–2133 (June 1997)     

Theorie des stimulierten Raman-Effekts

We consider stimulated Raman emission in solids, placed in a plane laser beam external to the cavity. The Hamiltonian of the system of phonons, electrons and electromagnetic fields is derived within the framework of a generalized adiabatic approximation for electrons and nuclei. It contains terms due to nonlinear interactions between electrons and phonons. Because the usual time-dependent perturbation theory cannot describe coherence effects properly we turn toHeisenberg's equations of motion for the operators of photons, phonons and electron excitations. In order to solve these equations in the steady state we apply an iteration procedure. We start with the light waves which give rise to electron transitions. The electrons such excited create phonons which then react on the electrons. Finally the electrons are coupled again to the lightfield. This procedure yields besides the usual wellknown Raman process two main processes occurring in stimulated Raman emission: a coupled two step Raman process and a parametric process. In the first one two phonons are involved. If the linewidth of phonons is comparable to the phonon frequencies the non-resonant parts of the above processes also become important. In solving the set of coupled equations for the light amplitudes, obtained from the iteration procedure, we only consider terms due to the first Stokes, the first anti-Stokes and the laser line. We then find frequency shifts of these lines due to the stimulated emission which are of the order of the linewidth of photons if this linewidth is very much smaller than that of phonons as it is the case in solids. This means that the coupled two step Raman process is dominant, in good agreement with measurements ofChiao andStoicheff in calcite.     

Photoconductivity of semiconductors at low temperatures

Low-temperature oscillations in the photoconductivity of semiconductors are discussed. It is shown that oscillations will be observed if the probability for energy relaxation with optical phonons exceeds both the probability of carrier recombination and the energy-relaxation time for acoustic phonons. The oscillation shape is studied for momentum relaxation with acoustic phonons and with ionized impurities for the case in which interelectronic collisions can be neglected and when an account of these collisions leads to the establishment of an electron temperature.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 85–92, September, 1968.     

Theory of magnetooptical effects in thin ferromagnetic films

A systematic theory is derived for the anomalous magnetooptical effects in thin ferromagnetic films for the more general case in which conduction electrons are scattered by both phonons and impurities. The Kohn-Luttinger density-matrix method is used to find the tensor for the complex transverse conductivity, which is linear in the spin-orbit interaction and can be used to find the magnetooptical parameter. The temperature dependences of the real and imaginary parts of the conductivity tensor are found for high temperatures.     

Probability of electron emission in photoemission from doped semiconductor

Electron motion is investigated in a strong-field region —in the region of bending of the band close to the surface of a semiconductor. In this region there is a change in the electron distribution function under the action of the electric field and interaction mechanisms leading to energy loss of the hot electrons. The main characteristics of the external photoeffect are determined by the energy lost by the electron in the region of band bending and the size of the barrier at the semiconductor-vacuum interface. The electron-emission probability from a crystal containing a space-charge region is determined from the solution of the Boltzmann kinetic equation. The energy dependence of the energy scattering length of the hot electrons is taken into account in the calculation. The calculation is made for photoemission from GaAs in conditions when the interaction with polar optical phonons is the most effective energy-scattering mechanism. An expression is obtained for the energy distribution function of the emitted electrons for the case of strong electric fields. The position of the distribution-function maximum depends on the electric field and the effective interaction constant with phonons. The current and quantum yield of the photoeffect are calculated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1978.In conclusion, it remains to extend profound thanks to V. L. Bonch-Bruevich for Ms constant interest in the work.     

Shift and damping of optical phonons caused by interaction with electrons

Frequency shift and damping of long-wave optical phonons caused by interaction with electrons are calculated. The equations of the dynamic theory of elasticity are considered together with the Maxwell equations and the kinetic equation for determining the deformation field, the electric field, and the distribution function of electrons. Changes in the spectrum of electrons are described using a local potential. Coulomb screening of the longitudinal electric field is taken into account.     

Scattering of electrons in the GaAs/AlAs transistor structure

This paper reports on the results of a self-consistent calculation of the rates of electron scattering from surface roughnesses, acoustic phonons, and polar optical phonons in a transistor structure based on a GaAs quantum wire in an AlAs matrix at temperatures T = 77 and 300 K. The rates of electron scattering are calculated in the electric-quantum limit approximation with due regard for both the collisional broadening of the electron energy spectrum and the Pauli principle. The influence of the gate voltage on these rates is investigated. The wave function of electrons and the energy level of their quantum ground state are determined by the self-consistent solution of the Poisson and Schrödinger equations.     

Temperature and concentration dependences of the electrical resistivity for alloys of plutonium with americium under normal conditions

The temperature and concentration dependences of the electrical resistivity for alloys of americium with plutonium are analyzed in terms of the multiband conductivity model for binary disordered substitution-type alloys. For the case of high temperatures (T > Θ_D, Θ_D is the Debye temperature), a system of self-consistent equations of the coherent potential approximation has been derived for the scattering of conduction electrons by impurities and phonons without any constraints on the interaction intensity. The definitions of the shift and broadening operator for a single-electron level are used to show qualitatively and quantitatively that the pattern of the temperature dependence of the electrical resistivity for alloys is determined by the balance between the coherent and incoherent contributions to the electron-phonon scattering and that the interference conduction electron scattering mechanism can be the main cause of the negative temperature coefficient of resistivity observed in some alloys involving actinides. It is shown that the great values of the observed resistivity may be attributable to interband transitions of charge carriers and renormalization of their effective mass through strong s-d band hybridization. The concentration and temperature dependences of the resistivity for alloys of plutonium and americium calculated in terms of the derived conductivity model are compared with the available experimental data.     

Heating and cooling of a two-dimensional electron gas by terahertz radiation

The absorption of terahertz radiation by free charge carriers in n-type semiconductor quantum wells accompanied by the interaction of electrons with acoustic and optical phonons is studied. It is shown that intrasubband optical transitions can cause both heating and cooling of the electron gas. The cooling of charge carriers occurs in a certain temperature and radiation frequency region where light is most efficiently absorbed due to intrasubband transitions with emission of optical phonons. In GaAs quantum wells, the optical cooling of electrons occurs most efficiently at liquid nitrogen temperatures, while cooling is possible even at room temperature in GaN heterostructures.     

Theory of magnetoresistive and thermomagnetic effects with electron scattering by optical phonons in semiconductors

The magnetoresistance and transverse Nernst-Ettingshausen effect in classical magnetic fields are calculated for the case of low-temperature scattering of electrons by optical phonons. It is shown that even though the electron relaxation time does not depend on the energy, not only are the indicated effects still possible, they can have a magnitude much greater than for other scattering mechanisms.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp. 116–120, February, 1976.The author is indebted to V. L. Bonch-Bruevich and A. G. Mironov for a useful discussion.     

The energy relaxation due to electron-two short wave length transverse acoustic phonons in semiconductors

The energy relaxation time, due to the interaction of electrons with two short wave lenght acoustic phonons, is calculated in nondegenerate semiconductors and compared with an experiment in n-type InSb at low temperatures.     

介电界面系统的电-声子相互作用

本文应用体极化电荷和面极化电荷产生的宏观电势导出了极化本征矢量遵从的积分和微分方程。证明了极化本征矢量应按正文中的正交归一关系(18)归一化,并导出了双层界面系统的极化本征模的哈密顿量及其与荷电粒子相互作用哈密顿量的算符表示形式。证明了电子与P-偏振SO声子的相互作用可用电子与有效频率为ωeff,±SO的SO声子的相互作用耦合常数α±SO表征;电子与P-偏振LO声子相互作用在性质上是电子与它所在的介质的体LO声于的相互作用,但被面效应减弱了。     

Mobility as controlled by the transverse component of phonon wave vector in quantum layers at low temperatures

Without resorting to either the Kawaji’s simplified model of interaction with only two-dimensional phonons or to the equipartition approximation for the phonon distribution, the characteristics of the momentum relaxation time of the conduction electrons in a quantized surface layer for interaction with intravalley acoustic phonons have been analysed under the condition of low temperature. The scattering and the mobility characteristics thus obtained for an n-channel (1 0 0)-oriented Si inversion layer are apparently quite different from what follows in the traditional framework.     

General theory for the interference of two-photon and one-photon processes in semiconductor heterostructures

We develop a general theory for the dynamics of multi-photon processes in semiconductor heterostructures. The resulting effective multi-band Bloch equations describe the dynamics of electrons in the reduced set of bands between which the optical pulses induce quasi-resonant transitions. The model is specialized to the case of interfering one- and two-photon transitions across the band gap. The withdrawn bands are included as intermediate states for an effective interaction that is quadratic in the electromagnetic fields. The benefit of this perturbative approach is to lead to equations of motion for slowly varying quantities only, in the spirit of the rotating wave approximation. Coulomb interaction and relaxation can also easily be included. Finally, a general expression for the time dependent polarization current that is consistent with the approximations involved by the effective multi-band Bloch equations is derived.     

Echo spectroscopy of two-level systems in a Y2SiO5: Pr3+ crystal

The results of an experimental investigation of low-temperature optical spectra and phase relaxation of electronic excitations of Pr³⁺ impurity ions in a Y₂SiO₅ crystal are reported. It is established that at low temperatures spectral lines are broadened by a mechanism that is uncharacteristic for crystals and is due to the interaction of impurity ions with two-level systems. The constants characterizing the interaction of Pr³⁺ impurity ions with phonons and two-level systems are found. Zh. éksp. Teor. Fiz. 115, 704–715 (February 1999)