Shock metamorphism of the graphite quasimonocrystal

Abstract

Micro structure examination of graphite quasimonocrystal recovered after dynamic loading to pressure of 35-45 GPa was carried out. Only a small amount of cubic diamond and recrystalized graphite was detected. Most of the graphite (～80 vol.%) remained in initial high orientation, but transformed to fine, grained phase with crystalite size 0.1-1 microns. Relaxation time of the transformation (～ 10 ns) and the degree of the transformation (～ 70-80 vol.%) were determined by means of measurements of the electrical resistivity during loading up to 26 GPa and following computer simulation of the results. We proposed that two simultaneous processes take place at pressures higher than 20 GPa: i) relatively slow diffusive graphite to diamond transformation localized in the zones with defect structure: ii) highly oriented graphite transforms to a diamond like phase with density of about 3.2 g/cm³ at zero pressure. This, transformation has fast, martensitic kinetics and is reversible.     

Anomalies of the photo-response and thermal boundary resistance of a YBaCuO/YSZ structure

The photoresponse of a YBaCuO/ZrO₂ bolometric structure was measured under modulated (λ = 630 nm) and pulsed (τ ≈ 7 – 8 ns; λ = 337 nm) laser excitation. The shape of the measured photoresponse was interpreted by a thermal model; nevertheless, the pulse amplitude for vanishing YBaCuO film resistance was 5–6 times greater than predicted; the thermal boundary resistance R_Bd between YBaCuO and YSZ was evaluated ? 10^?2 K × cm²/Watt, which is considerably larger than estimated theoretically for the similar situation of YBaCuO/MgO [5].     

退火氧压对YBa2Cu3O7-x薄膜中的激光感生热电电压效应的影响

测量了在不同氧压下退火生长的YBa₂Cu₃O_7-x(YBCO)薄膜中的激光感生热电电压(LITV)信号,发现随退火氧压的增大可使LITV信号的峰值有2—4倍的增强,并且变化趋势与薄膜热电势的各向异性随氧含量的变化规律相同.波长在473—808nm范围内的连续激光辐照,在5000Pa的氧压下退火生长的YBCO薄膜中探测到的LITV信号最大;而紫外脉冲激光辐照时,LITV信号的最大值出现在退火氧压为10⁵Pa 关键词： 2Cu₃O_7-x薄膜')" href="#">YBa₂Cu₃O_7-x薄膜 激光感生热电电压 各向异性的Seebeck系数 氧含量     

Fast scintillation detectors for high-energy X-ray region

We have developed fast scintillation detectors for nuclear resonant scattering experiments using synchrotron radiation and a nuclear excited level existing in >30?keV. A fast x-ray detector using an organic-inorganic perovskite scintillator of phenethylamine lead bromide (PhE-PbBr₄) had a dominant light emission with a fast decay time of 9.9?ns. An x-ray detector equipped with a 0.9-mm-thick PhE-PbBr₄ crystal (size: ～8 × 7?mm²) was used to detect nuclear resonant scattering in ⁶¹Ni (the first excited level: 67.41?keV; half-life: 5.3?ns). We could successfully record the decaying gamma rays emitted from ⁶¹Ni with a relatively high detection efficiency of 24%. A lead-doped plastic scintillator (NE142, Pb ～5?wt% doped) had been known to have a faster decay time of 1.7?ns. Following a test of a single NE142 detector, a four-channel NE142 detector was fabricated and successfully applied to the synchrotron-radiation based M?ssbauer spectroscopy experiment on ⁶¹Ni.     

Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

Time-resolved photography of X-ray emission from CO2 laser generated plasma

The construction and use of an X-ray pinhole camera with a nanosecond shutter is described. Photographs of X-ray emission from plasma generated by a CO₂ laser (at incident intensities of ? 10¹³ W cm^?2) were recorded with time and space resolution of 6 ns and ～ 20 μm respectively, and the structure of localised X-ray emission regions was measured. These observations are related to contemporary theories of non-linear laser-plasma interactions.     

Three-dimensional electromagnetic band-gap structure containing TiO2 fabricated by rapid-prototyping

Three-dimensional (3D) diamond structure electromagnetic band-gap (EBG) structures containing TiO₂ fabricated by rapid-prototyping (RP) technique were investigated. The simulations based on finite element method (FEM) were employed to model the band structures. The influence of aspect ratio on the band gap width was studied. The optimal band gap width EBGs were fabricated and investigated experimentally. Gel-casting together with RP technique were used in the fabrication. TiO₂ gel was cast into the diamond structure molds fabricated by RP method to obtain the green EBG structures. The transmission characteristics of the EBG structures were measured by transmission/reflection (T/R) methods using a vector network analyzer. Complete band-gap was observed in the transmission characteristics in the frequency from 11 GHz to 12 GHz, which agreed well with the simulation results.     

High‐order Stokes and anti‐Stokes Raman generation in monoisotopic CVD 12C‐diamond

We determined, for the first time, the room temperature phonon energy related to the F_2g vibration mode (ω_SRS(12C) ～ 1333.2 cm^–1) in a mono‐crystalline single‐isotope CVD ¹²C‐diamond crystal by means of stimulated Raman scattering (SRS) spectroscopy. Picosecond one‐micron excitation using a Nd³⁺:Y₃Al₅O₁₂‐laser generates a nearly two‐octave spanning SRS frequency comb (～12000 cm^–1) consisting of higher‐order Stokes and anti‐Stokes components. The spacing of the spectral lines was found to differ by Δω_SRS ～ 0.9 cm^–1 from the comb spacing (ω_SRS(natC) ～ 1332.3 cm^–1) when pumping a conventional CVD diamond crystal with a natural composition of the two stable carbon isotopes ¹²C (98.93%) and ¹³C (1.07%). (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effects of hydrogen and oxygen on the electrochemical corrosion and wear-corrosion behavior of diamond films deposited by hot filament chemical vapor deposition

A diamond film was deposited on silicon substrate using hot filament chemical vapor deposition (HFCVD), and H₂ and O₂ gases were added to the deposition process for comparison. This work evaluates how adding H₂ and O₂ affects the corrosion and wear-corrosion resistance characteristics of diamond films deposited on silicon substrate. The type of atomic bonding, structure, and surface morphologies of various diamond films were analyzed by Raman spectrometry, X-ray diffraction (XRD) and atomic force microscopy (AFM). Additionally, the mechanical characteristics of diamond films were studied using a precision nano-indentation test instrument. The corrosion and wear-corrosion resistance of diamond films were studied in 1 M H₂SO₄ + 1 M NaCl solution by electrochemical polarization. The experimental results show that the diamond film with added H₂ had a denser surface and a more obvious diamond phase with sp³ bonding than the as-deposited HFCVD diamond film, effectively increasing the hardness, improving the surface structure and thereby improving corrosion and wear-corrosion resistance properties. However, the diamond film with added O₂ had more sp² and fewer sp³ bonds than the as-deposited HFCVD diamond film, corresponding to reduced corrosion and wear-corrosion resistance.     

Laser induced photovoltages in B-riched MgB2 thin films

Ultrafast photoelectric effects have been observed in MgB₂ thin films fabricated by chemical vapor deposition on MgO (1 1 1) substrates. The rise time and full width at half-maximum of the photoresponse pulse signals were about 2.4 and 4 ns under the irradiation of a 248 nm laser pulse of 20 ns in duration through the MgO substrate at ambient temperature without any bias. Furthermore, the signal polarity is directly bound up with the laser illumination positions, while no photovoltage was observed when the MgO (1 1 1) single crystal was irradiated. The inner origin mechanism of the present positions-dependent photovoltaic response was discussed.     

Electrostatic Layer-by-Layer Assembly of Hierarchical Structure of Multi-Walled Carbon Nanotubes With Glass Fiber Cloth Reinforced Epoxy Composites

A hierarchical structure of glass fiber cloth (GFC) deposited with multiwalled carbon nanotubes (MWCNTs) and cationic polyelectrolyte poly (diallyldimethylammonium chloride) (PDDA) was fabricated by the layer-by-layer (LBL) assembly method. We demonstrated that negatively charged MWCNTs, by acid functionnalization, and positively charged PDDA were sequentially adsorbed onto the GFC to form a uniform and porous interconnected network structure of MWCNTs. Multiscale composites with GFC-[PDDA-MWCNTs] _n were prepared by compression molding. The presence of the MWCNTs with their porous nanostructure helped in the formation of an interpenetrating network with the matrix at the interface layer. The resulting interlaminar strength increased by 18～37% and the surface electrical resistance (～10⁵ Ω) dropped greatly compared to those of epoxy/GFC composites (10¹⁴ Ω), showing them to be promising structural composites with GFC-[PDDA-MWCNTs] _n reinforcement with an improvement in properties over epoxy/GFC composites.     

Fabricating Microbolometer Array on Unplanar Readout Integrated Circuit

In this paper, the integration of an experimental 32 × 32 uncooled IR microbolometer array with an unplanar CMOS Readout Integrated Circuit (ROIC) is presented. A vanadium oxide film fabricated by low temperature reactive ion beam sputtering is utilized as thermal-sensitive material in the bolometric detectors Before the integration, the unplanar ROIC for commercial use is first planarized by bisbenzocyclobutene film, then a electroless nickel-plating on ohmic contact areas is accomplished. Finally the bolometer array is fabricated using a micromachining process, which is completely compatible with CMOS technology. Measurements and calculations for the as-fabricated samples show that the responsivity of 1.4 × 10⁴ V/W and the detectivity of 2.1 × 10⁸cmHz^1/2W^–1 and a thermal response time of 10ms are obtained at a pulse bias of IV.     

Relaxation processes upon photoexcitation of semiconductor CdF<Subscript>2</Subscript> by laser pulses

The microwave-cavity-based technique is used to study the processes of photoionization of electrons from donor levels to the conduction band in semiconductor CdF₂ crystals doped with Y, In, or Ga. The samples were excited by periodic pulses of Nd-laser (λ = 1.06 μm, pulse width ～10 ns) in the temperature range 6–77 K. The transient processes were detected in the absorption and dispersion modes related to variation of the imaginary and real parts of the complex permittivity ?₁ ? i?₂ induced by the light pulses. The observed signals consisted of short peak at t ～ 0, approximately 40–70 ns in length, and a long tail with a duration of ～100 ms. The short peak is likely to be related to the stay of the photoexcited carriers in the conduction band, while the long tail is associated with the processes of excitation relaxation after the electrons coming back to the donor levels of the impurity band. The weak temperature dependence of the width of the peak at t ～ 0 is explained by the tunneling mechanism of relaxation of electrons through the energy (or, probably, spatial) barrier separating the bound and free states of the carriers in the semiconductor CdF₂.     

Characterization of soft-X-ray detectors fabricated with high-quality CVD diamond thin films

We have characterized the performance of soft-X-ray detectors fabricated with undoped and B-doped homoepitaxial diamond layers of high quality which were grown on a commercially available type Ib (1 0 0) substrate by means of a high-power microwave-plasma chemical-vapor-deposition (CVD) method. The signal currents of the diamond-based detectors with thin TiN electrodes formed vertically (along the homoepitaxial growth direction) were measured at room temperature as a function of the applied voltage, V_a, for irradiations of 500-1200 eV soft-X-ray beams ranging from ≈6 × 10⁹ to ≈1 × 10¹¹ photons/s. The deduced apparent quantum efficiencies increased with the increasing V_a and reached to 2.5 × 10³ at V_a = 60 V. As expected from the device structure, the detector performance depended only very slightly on the applied magnetic field up to 10 T. The excellently high sensitivities attained for soft-X-ray photons are discussed in relation to carrier amplification mechanisms which invested the above diamond detectors.     

Study of synthetic diamonds by dynamic nuclear polarization-enhanced13C nuclear magnetic resonance spectroscopy

Four I_b-type synthetic diamond crystals were studied by dynamic nuclear polarization (DNP)-enhanced high resolution solid state¹³C nuclear magnetic resonance (NMR) spectroscopy. The home built DNP magic-angle-spinning (MAS) NMR spectrometer operates at a field strength of 1.9 T and the highest DNP enhancement factor of synthetic diamonds came near to 10³. Comparing with I_b-type natural diamonds, the¹³C NMR linewidths of synthetic diamonds in static spectra are broader. The¹³C spin-lattice relaxation time and DNP polarization time of synthetic diamond are shorter than those of I_b-type natural diamond. From the hyperfine structure of the DNP enhancement curve, four kinds of nitrogen-centred free radicals could be identified in synthetic diamond.     

High-Power GaN Electronic Devices

Gallium Nitride (GaN) and related materials (especially AlGaN) recently have attracted a lot of interest for applications in high-power electronics capable of operation at elevated temperatures and high frequencies. The AlGaInN system offers numerous advantages. These include wide bandgaps, good transport properties, the availability of heterostructures (particularly AlGaN/GaN), the experience base gained by the commercialization of GaN-based laser and light-emitting diodes and the existence of a high growth rate epitaxial method (hydride vapor phase epitaxy, HVPE) for producing very thick layers or even quasisubstrates. These attributes have led to rapid progress in the realization of a broad range of GaN electronic devices. Al_xGa_1-xN (x=0 ～.25) Schottky rectifiers were fabricated in a lateral geometry employing p⁺-implanted guard rings and rectifying contact overlap onto an SiO₂ passivation layer. The reverse breakdown voltage (V_B) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al_0.25Ga_0.75N and 6350 V for GaN, respectively, for 100-µm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of <9.67×10⁵ Vcm^?2, which is roughly a factor of 5 lower than the theoretical maximum in bulk GaN. The figure of merit (V_B)²/R_ON, where RON is the on-state resistance, was in the range 94 to 268 MWcm^?2 for all the devices. Edge-terminated Schottky rectifiers were also fabricated on quasibulk GaN substrates grown by HVPE. For small-diameter (75?µm) Schottky contacts, Vs measured in the vertical geometry was ～700?V, with an on-state resistance (RON) of 3?mΩcm², producing a figure-of-merit V_B ²/R_ON of 162.8?MW-cm^?2. GaN p-i-n diodes were also fabricated. A direct comparison of GaN p-i-n and Schottky rectifiers fabricated on the same GaN wafer showed higher reverse breakdown voltage for the former (490?V vs. 347?V for the Schottky diodes), but lower forward turn-on voltages for the latter (～3.5?V vs. ～5?V for the p-i-n diodes). The forward I-V characteristics of the p-i-n rectifiers show behavior consistent with a multiple recombination center model. The reverse current in both types of rectifiers was dominated by surface perimeter leakage at moderate bias. Finally, all of the devices we fabricated showed negative temperature coefficients for reverse breakdown voltage, which is a clear disadvantage for elevated temperature operation. Bipolar devices are particularly interesting for high current applications such as microwave power amplifiers for radar, satellite, and communication in the l～5?GHz range, powers >l00?W, and operating temperatures >425°C. pnp Bipolar Junction Transistors and pnp Heterojunction Bipolar Transistors were demonstrated for the first time. For power microwave applications, small area self-aligned npn GaN/AlGaN HBTs were attempted. The devices showed very promising direct current characteristics.     

XRD and RBS study of annealing effects in titanium implanted a-silicon films

We have used ion implantation of 30 keV⁴⁸Ti⁺ ions into a-Si films at nominal doses of 10²⁰-10²¹ ions/m² to fabricate coherent silicide layers. Characterization of these layers and study of their annealing behaviour were carried out using XRD and RBS techniques. We find that the layers are a mixture of Ti₅Si₄, TiSi, TiSi₂ and Si. On annealing at relatively lower temperatures (up to ～ 300° C), predominant silicide phases present in the layer are Ti-rich, such as Ti₅Si₄ and TiSi. At higher temperatures, the Ti-rich layer has a tendency to consume unreacted Si from the film and to form a predominantly Si-rich silicide layer. A structure of silicon different from the diamond cubic structure is noticed in these implanted layers.     

Reactive Ion Beams Sputtering of Vanadium Oxides Films for Uncooled Microbolometer

Vanadium oxides thin films for uncooled bolometric detectors have been fabricated on Si₃N₄-film-coated Si substrates by low temperature reactive ion beam sputtering in a controlled oxygen atmosphere. The typical growth temperature is kept at 200°C during sputtering, which is compatible with the post-CMOS technology. The as-deposited film exhibits sheet resistance and temperature coefficient resistant of 32 k and –0.025 K^–1 at room temperature, respectively.     

Nonstationary Raman amplification of superluminescence in crystals

The sequential excitation of LiF crystals with F ₂ ^? color centers and KGd(WO₄)₂ crystals by 1047-nm laser pulses with a duration of 22 ps is investigated. Broadband (275 cm^?1) Stokes superluminescence appearing in the fluoride crystal undergoes nonstationary Raman amplification in the oxide crystal. The amplified pulses with a Stokes frequency shift of 767 cm^?1, a duration of 7 ps, and a power up to ～1.1 MW have high spatial and time coherence and exhibit time delay increasing from ～1 to 4.5 ns with a decreasing pump power. The results are discussed in terms of the cooperative Raman scattering.