H2O在SrTiO3-(001)TiO2表面上吸附和解离的密度泛函理论研究

利用密度泛函理论研究了0.25单层（ML）,0.5ML,0.75ML和1ML吸附率下H₂O在SrTiO₃-（001）TiO₂表面上的吸附行为.比较了不同吸附率下分子吸附和解离吸附的稳定性,利用微动弹性带（nudged elastic band）方法计算了H₂O的解离势垒.结果表明：在低吸附率（0.25ML和0.5ML）时,H₂O表现为解离吸附;在0.75ML吸附率下,分子吸附和解离吸附同时存在;而在全吸附（吸附率为1ML）时,分子吸附更稳定.基于对H₂O分子与表面之间以及H₂O分子之间的电荷转移和相互作用的分析,讨论了吸附率对H₂O吸附和解离的影响. 关键词： 2O')" href="#">H₂O 吸附 3-（001）TiO₂表面')" href="#">SrTiO₃-（001）TiO₂表面 密度泛函理论     

氧在Nb(110)表面吸附的第一性原理研究

通过第一性原理赝势平面波方法研究了氧在Nb(110)表面的吸附性质随覆盖度变化规律. O在Nb(110)表面最稳定吸附位是洞位,次稳定吸附位是长桥位. 在长桥位吸附时, O诱导Nb(110)表面功函数随覆盖度的增加而几乎线性增加;但当O在洞位吸附时, 与干净Nb表面相比, 覆盖度为0.75 ML和1.0 ML时功函数增加, 而覆盖度为0.25 ML和0.5 ML时功函数减小.通过对面平均电荷密度分布和偶极矩变化的讨论, 解释了由吸附导致功函数复杂变化的原因.通过对表面原子结构和态密度分析, 讨论了O在Nb表面吸附时引起表面原子结构变化以及O和Nb(110)表面原子的相互作用.     

水分子在Y_n(n=2-8)团簇表面的分子吸附与解离吸附（英文）

运用密度泛函理论,对H2O在Yn(n=2-8)团簇表面的分子吸附与解离吸附两种模式进行了结构优化,电子性质分析。结果表明:分子吸附中H2O倾向于O端吸附于Y-Y原子桥位,而解离吸附中H2O解离的H,O原子倾向于吸附于Yn团簇的面位。两种吸附模式都导致了(解离吸附n=4,5除外)主团簇Y原子平均键长增大。分子吸附和解离吸附的吸附强度和化学活性都随尺寸增加而增大。解离吸附中体系的稳定性明显高于分子吸附,且与体系的电子壳层效应密切相关。     

Cu在Zr掺杂CeO_2(111)表面吸附特性的第一性原理研究北大核心CSCD

采用第一原理计算方法,计算并分析了Cu在Zr掺杂的CeO2(111)表面吸附的吸附能及所形成的Cu/Ce0.75Zr0.25O2(111)界面体系的吸附结构和电子结构.结果表明:1)Cu在Ce0.75Zr0.25O2(111)表面上邻近Zr原子的次层O的顶位吸附最强;2)Zr的掺杂增强了Cu与CeO2衬底的作用;3)Cu的吸附在Ce0.75Zr0.25O2(111)表面的O2p-Ce4f态之间引入了新的间隙态,这些间隙态主要来自于Cu3d与衬底O2p的杂化作用,这是Cu与Ce0.75Zr0.25O2有较强作用的主要原因;4)吸附的Cu被Ce0.75Zr0.25O2氧化为Cuδ+,并伴随着表面Ce4+→Ce3+的转化,该反应可以总结为:Cu/Ce4+→Cuδ+/Ce3+.     

第一性原理研究O2和H2O在ZnO (101 ̅0)表面上的吸附行为

运用基于密度泛函理论(DFT)的第一性原理方法研究了O2和H2O单分子在ZnO (101 ̅0)表面上的吸附行为。吸附位点主要考虑了表面的Zn顶位和Zn桥位,同时也考虑了其它可能的吸附行为。对于O2在ZnO (101 ̅0)表面上的吸附设计了9个模型,H2O在ZnO (101 ̅0)表面上的吸附设计了12个模型。通过形成能计算发现,O2在表面上的吸附为正值,H2O的吸附为负值。O2和H2O单分子在表面上发生分子吸附,未见解离形态。对于O2吸附最稳定的结构是O2分子与表面相邻的Zn原子形成了Znslab1-Oads1-Oads2-Znslab2桥连键。其它较为稳定的结构是Oads1原子迁移到下一个表面重复晶胞的O原子位置附近,在表面上形成了Znslab1-Oads1键,同时Oads2原子扩散至表面沟渠上方。对于H2O吸附,不论以何种方式吸附结构都比较稳定。其中最稳定的构型是Oads迁移到下一个表面重复晶胞的O原子位置附近,形成了Znslab1-Oads键以及Oslab3-H氢键。另外较稳定的构型是Oads迁移到ZnO (101 ̅0)表面台阶上方,形成了Znslab1-Oads键以及Oslab1-H氢键。     

Cu(100)表面CO分子单层膜的原子结构

利用第一性原理研究了覆盖度分别为1.00, 0.50和0.25 ML时CO分子单层膜在Cu(100)表面的吸附系统. 计算表明CO分子对不稳定. 获得了CO分子单层膜在虚拟Cu(100)表面的原子结构, 以及CO分子单层膜在Cu(100)表面吸附系统的原子结构. 当CO分子单层膜在Cu(100)表面的三个吸附位吸附, 覆盖度为1.00 ML时, 顶位和桥位都稳定, 而空心位不稳定; 覆盖度为0.50和0.25 ML时, 三个吸附位都稳定.比较吸附前后CO分子单层膜的原子结构, 可知CO分子和Cu(100)表面的相互作用强于CO分子单层膜之间的相互作用. 关键词： CO分子单层膜 自组装 CASTEP Cu(100)     

水分子在Yn (n=2-8)团簇表面的分子吸附与解离吸附

运用密度泛函理论,对H2O在Yn (n=2-8) 团簇表面的分子吸附与解离吸附两种模式进行了结构优化,电子性质分析。结果表明：分子吸附中H2O倾向于O端吸附于Y-Y原子桥位,而解离吸附中H2O解离的H, O原子倾向于吸附于Yn团簇的面位。两种吸附模式都导致了（解离吸附n=4, 5除外）主团簇Y原子平均键长增大。分子吸附和解离吸附的吸附强度和化学活性都随尺寸增加而增大。解离吸附中体系的稳定性明显高于分子吸附,且与体系的电子壳层效应密切相关。     

水分子在Yn (n=2-8)团簇表面的分子吸附与解离吸附

运用密度泛函理论,对H2O在Yn (n=2-8) 团簇表面的分子吸附与解离吸附两种模式进行了结构优化,电子性质分析。结果表明：分子吸附中H2O倾向于O端吸附于Y-Y原子桥位,而解离吸附中H2O解离的H, O原子倾向于吸附于Yn团簇的面位。两种吸附模式都导致了（解离吸附n=4, 5除外）主团簇Y原子平均键长增大。分子吸附和解离吸附的吸附强度和化学活性都随尺寸增加而增大。解离吸附中体系的稳定性明显高于分子吸附,且与体系的电子壳层效应密切相关。     

水在金属氧化物表面的吸附与解离

水(H2O)由H原子和O原子组成.地球上有大量的水,若能找到一种经济、实用的方法将H2O解离生成H2和O2,则在新能源的开发和应用方面,意义深远.水在固体表面的吸附现象极为普遍,在某些金属或金属氧化物表面,H2O被吸附并解离成OH-和H+.文章以有序氧化镁(MgO(100))薄膜和Pd/MgO(100)体系为例,在超高真空条件下,用光电子能谱和高分辨电子能量损失谱方法,研究了水在它们表面的吸附与解离.研究结果表明,H2O在MgO(100)表面可以被部分解离,而H2O在Pd/MgO(100)表面的解离与Pd的含量有关.了解水与固体表面的相互作用机理还需要做更多的基础研究工作.     

H2O分子在Fe(100), Fe(110), Fe(111)表面吸附的第一性原理研究

采用第一性原理研究了H2O分子在Fe(100),Fe(110),Fe(111)三个高对称晶面上的表面吸附.结果表明,H2O分子在三个晶面上的最稳定结构皆为平行于基底表面的顶位吸附结构.H2O分子与三个晶面相互作用的吸附能及几何结构计算结果表明H2O分子与三个晶面的相互作用程度不同,H2O分子与Fe(111)晶面的相互作用最强,其次是Fe(100),相互作用最弱的是Fe(110)表面,而这与晶面原子的排列密度相关.吸附体系的电子结构计算结果也得出了相似的结论.同时电荷布居分析表明,H2O分子与Fe表面相互作用时,O原子与基底原子之间的电荷交换使基底Fe原子表面带负电,导致表面电位降低,也促使Fe表面更易于发生电化学腐蚀反应.     

Interaction of oxygen with the Pt(1 1 1) surface in wide conditions range. A DFT-based thermodynamical simulation

We present the results of ab initio calculations of oxygen atomic adsorption in a wide range of coverage on Pt(1 1 1). At θ = 0.25 ML, the O adsorption at fcc hollow site is clearly favoured over the hcp site. At θ = 0.5 ML, the O adsorption energy decreases but the same site is favoured. When experimental or theoretical previously reported data are available, the calculated adsorption energies and site preferences are in good agreement. Among the various configurations and coverages investigated in the present work, no adsorption is stable beyond θ = 0.5 ML, except by occupation of a subsurface tetrahedral site. In that case, a total O coverage of 0.75 ML could be achieved, which is only slightly less stable than the θ = 0.5 ML configuration.

The use of thermodynamics permitted to explore the temperature–pressure stability domain corresponding to 0.25 ML, 0.5 ML and 0.75 ML. From this, we conclude that subsurface O species could be stable at temperatures lower than 700 K, with O₂ pressures of 1 bar or less.     

Adsorption of O and CO on Ir(100) from first principles

The adsorption of O and CO on Iridium (100) surface with different coverages (Θ = 1.0, 0.5, 0.25 monolayer (ML)) is studied using density functional theory (DFT). The most energetically preferred site of adsorption for O is found to be the bridge site. However, the top site is the preferred one for CO at coverages of 0.25 ML and 0.5 ML. Oxygen adsorbed on the bridge site at 0.25 ML and 0.5 ML coverages causes a row pairing. A missing row reconstruction appears in the case of 0.25 ML coverage. We find that the adsorption of O (CO) on Ir(100) surface causes disruptions of Ir–Ir bonds in the metal, which reduces (increases) the Ir–Ir bond length.     

Adsorption and decomposition of H2S on the Ge(100) surface

The adsorption and decomposition of H₂S on the Ge(100) surface is investigated. H₂S is a simple sulfur containing molecule that eventually decomposes to yield hydrogen gas and deposits sulfur on the germanium surface. The surface reactions of H₂S are investigated by ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, and temperature programmed desorption. Room temperature exposure of H₂S to Ge(100) results in dissociative adsorption which can be followed easily by ultraviolet photoelectron spectroscopy. Warming the H₂S exposed surface results in some molecular desorption and further decomposition of the adsorbed species. At saturation, 0.25 ML of H₂S decomposes generating 0.5 ML of atomic hydrogen. Above the hydrogen desorption temperature some etching of the germanium surface is observed by sulfur. The etch product, GeS, is subsequently observed in temperature programmed desorption experiments. Exposure of H₂S to the Ge surface at elevated temperatures leads to higher sulfur coverages. A sulfur coverage approaching 0.5 ML can be deposited at the higher exposure temperatures.     

The Rh(100)-(3 × 1)-2O structure

The O adsorption on Rh(100) has been studied using high resolution core level spectroscopy, low energy electron diffraction and scanning tunnelling microscopy. In addition to the well known (2 × 2), (2 × 2)-pg and c(8 × 2) structures at coverages of 0.25, 0.5 and 1.75 ML respectively, an intermediate (3 × 1) structure with a coverage of 2/3 ML is identified.     

硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25-1.0ML)的关系.结果表明：硫原子吸附在H位最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致的;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

The adsorption position of Hg on Ni(100): a transmission channeling study

The adsorption position of Hg on Ni(100) has been studied with transmission channeling. It is shown that for coverages up to 0.5 monolayer (ML), Hg adsorbs in the four-fold hollow site (FFHS) at a height of 2.25 ± 0.10 rA. This is at variance with an earlier report of adsorption in the bridge site. For a crystal temperature of 115 K and low coverage (θ_Hg t 0.18 ML), the two-dimensional vibration amplitude parallel to the surface, ρ_Hg, is 0.10 +- 0.03 rA, but at higher coverage, θ_Hg 0.45 ML, there is an apparent increase in the root-mean-square displacement of the Hg atoms from the FFHS. Possible origins of this increase are discussed.     

The reaction of H2S with surface oxygen on Ni(110)

The reactions of H₂S with predosed surface oxygen on Ni(110) surfaces were studied for a variety of coverage conditions. The primary reaction product is H₂O, but the details of the water formation and desorption depends on the coverage of both O and H₂S.

For high coverages of oxygen (p(2 × 1)−O; 0.5 ML), the reaction to form water is quantitative. The loss of oxygen from the surface (as measured by AES) is equal to the increase in sulfur coverage. XPS and HREELS measurements indicate the presence of chemisorbed H₂O immediately following large exposures of H₂S on the oxygen predosed surface at 110 K. Deuterium incorporation results suggest that the primary mechanism for these coverage conditions involves direct transfer of hydrogen from SH or H₂S moieties to the oxygen.

A second mechanism involving reaction of surface hydroxyl groups with surface hydrogen was also identified. This mechanism is particularly important for high coverages of oxygen (0.5 ML) and low coverages of H₂S (0.15 ML), where water desorption was observed at 235 K, but was not observed spectroscopically at 110 K. The sequential addition of two surface hydrogen atoms to surface oxygen is not an important mechanism in this system.

These reactions were modeled using a bond-order conservation method, and the model successfully reproduced the important mechanistic conclusions.