13.9 nm马赫贞德干涉仪用软X射线分束镜研究

 介绍了13.9 nm马赫贞德干涉仪用软X射线分束镜的设计、制备与性能检测。基于分束镜反射率和透过率乘积最大的评价标准,设计了13.9 nm软X射线激光干涉实验用多层膜分束镜。采用磁控溅射方法在有效面积为10 mm×10 mm、厚度为100 nm的Si3N4基底上镀制了Mo/Si多层膜,制成了多层膜分束镜。利用X射线掠入射衍射的方法测量了Mo/Si多层膜的周期。用扩束He-Ne激光束进行的投影成像方法定性分析了分束镜的面形精度,利用光学轮廓仪完成了分束镜面形精确测量。利用北京同步辐射装置测量了分束镜反射率和透射率,在13.9 nm处,分束镜反射率和透过率乘积达4%。使用多层膜分束镜构建了软X射线马赫贞德干涉仪,并应用于13.9 nm软X射线激光干涉实验中,获得了清晰的含有C8H8等离子体电子密度信息的动态干涉条纹。     

溅射气压对X射线多层膜反射率的影响

本文在不同的溅射气压的情况下制备了具有相同结构参量的Mo/Si多层膜,测出了其对应的小角度X衍射曲线,在北京同步辐射实验室测量了多层膜的软X射线反射率.小角X射线衍射谱表明:随着溅射气压升高,多层膜的小角X射线衍射曲线的高次峰的峰高急剧变小,半峰宽变大.反射率测量结果也表明:多层膜的X射线反射率随溅射气压的升高而急剧降低.     

单发实验测量软X射线多层膜反射镜反射特性

 提出了一种单发实验测量软X射线波段多层膜反射镜反射特性的简易方法。实验采用激光等离子体软X射线源作为光源,用平焦场光栅谱仪分光,在光路中引入掠入射镜以消除高级次谱的影响,用软X光CCD记录,在一发激光打靶实验中,测量了设计中心波长为13.9 nm的Mo/Si多层膜反射镜的反射特性。     

超强激光超热电子激发的Kα X射线发射研究

建立了无色散型X射线谱仪. 利用SILEX-I激光装置的超强激光辐照固体物质,分别在靶前、后定量测量了Cu和Mo物质在不同激光功率密度时的X射线谱和Kα光子产额,推导了不同激光强度时的Kα X射线光子转换效率. 实验发现,打靶激光能量越高,靶后出射的Kα产额越高,100μm Mo靶可获得10^-5量级转换效率. 关键词： X射线发射 激光-物质相互作用 Kα谱仪')" href="#">Kα谱仪     

超强激光超热电子激发的KαX射线发射研究

建立了无色散型X射线谱仪.利用SILEX-I激光装置的超强激光辐照固体物质,分别在靶前、后定量测量了Cu和Mo物质在不同激光功率密度时的X射线谱和Kα光子产额,推导了不同激光强度时的Kα X射线光子转换效率.实验发现,打靶激光能量越高,靶后出射的Kα产额越高,100μm Mo靶可获得10-5量级转换效率.     

X射线激光干涉对晶体精密测量

基于X射线激光脉冲短、单色性好、能量高而且相干程度高的优点,本文从理论上提出X射线激光干涉用于对晶体结构及缺陷的测量。由于X射线激光波长量级为10~(-10) m,因此可实现高精密测量。此外,本文给出了X射线激光测量晶体的装置、缺陷晶体的测量模型和晶体参量的测量模型。     

研究扩散屏障层对Mo/Si多层膜软X射线反射率影响的模拟

在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.     

中心波长为28.5nm多层膜镜反射率测量

在“星光-Ⅱ”装置上以类Ne铬x射线激光作为标定源，以平场光栅谱仪为分光元件进行了285nm的Mo/Si多层膜反射镜效率测量.介绍了实验方法，给出了实验结果，本次研制的两块多层膜镜反射率分别为31%和9.6%. 关键词： x射线多层膜反射镜 反射率测量 x射线激光     

激光等离子体光源软X射线反射率计

介绍了所研制的激光等离子体光源软X射线反射率计,该反射率计由激光等离子体光源、掠入射光栅单色仪、样品室、真空系统、样品台、光电探测系统和计算机控制系统组成,工作波段8～30 nm,测量样品的最大尺寸为130 mm×120 mm×120 mm(长×宽×高),可以利用这台反射率计对软X射线波段光栅、滤光片和多层膜反射镜等光学元件进行测量和评估。为检验反射率计的性能指标,利用该反射率计对本室研制的软X射线多层膜反射镜的反射率进行了测量,测量结果与理论计算结果符合较好,反射率测量重复性为±0.6%。     

X射线二极管时间特性研究

研究X射线二极管(XRD)时间特性.XRD 是构成软X射线能谱仪的主要部件，它用于激光等离子体发射软X射线谱测量.实验利用激光聚变研究中心的200TW激光器(激光能量～6J，脉冲宽度～30fs)打金箔靶产生的X射线发射谱,用滤片(Al)-XRD探测系统测量，探测信号由高频电缆(SUJ-50-10)传输和宽带示波器(TDS694C和TDS6604B)记录.实验数据进行了线性拟合和比对分析. 关键词： X射线二极管 时间特性 软X射线能谱仪 数据处理     

用不同的Mo靶溅射功率制备Mo/Si多层膜

 用磁控溅射法制备了周期厚度和周期数均相同的Mo/Si多层膜,用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时,Mo/Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。研究发现,随着Mo靶溅射功率的增大,Mo/Si多层膜的表面粗糙度增加,Mo的特征X射线衍射峰也增强,Mo/Si多层膜的软X射线峰值反射率先增大后减小。     

Synthesis of molybdenum silicide by both ion implantation and ion beam assisted deposition

Two groups of Mo/Si films were deposited on surface of Si(1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 °C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 × 10¹⁶ ions/cm². The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/Si films were also measured. For the Mo/Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 °C was pure MoSi₂. Sheet resistance of the Mo/Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/Si films were obviously affected by test parameters.     

月球表面环境对Mo/Si多层膜光学特性的影响

研究了月球表面高温、强辐射的空间环境下Mo/Si多层膜的热稳定性和辐照稳定性。Mo/Si多层膜采用磁控溅射法镀制,将制备好的多层膜在100℃和200℃高温下加热,利用激光等离子体反射率计和X射线衍射仪(XRD)对加热前后的多层膜进行了测量。结果显示在200℃以内,多层膜反射率和中心波长没有显著变化,表现出良好的热稳定性。利用Monte Carlo方法模拟了质子在多层膜内造成的缺陷的分布和浓度分布。模拟显示,能量大的质子沉积在多层膜内部,造成的缺陷也集中在多层膜内部。用能量为60keV,剂量分别为3×1012 cm-2和3×1014 cm-2的质子对Mo/Si多层膜进行辐照实验。发现多层膜内部出现了烧蚀损伤缺陷及节瘤缺陷。结果表明能量相同时,辐照剂量越大对多层膜反射率影响越大。     

Interface roughness, surface roughness and soft X-ray reflectivity of Mo/Si multilayers with different layer number

A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD).Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity.     

Mo/Si软X射线多层膜的界面粗糙度研究

 用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo/Si多层膜系列, 利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo/Si多层膜的新鲜表面近似等同于同一多层膜的内界面,通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加,Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小,多层膜的峰值反射率先增加后减小。     

On the interplay of internal/external stress and thermal stability of Mo/Si multilayers

Mo/Si multilayer (ML) systems were deposited on Si(100) substrate by DC magnetron sputtering. The MLs were annealed at temperatures up to 440 °C under high-vacuum conditions, both with and without the influence of external mechanical stress, and characterized before and after thermal treatment by means of X-ray reflectometry, wide-angle X-ray scattering and optical microscopy. Two ML configurations were compared, one composed of pure Mo and Si layers and another with additional B₄C and C interlayers at the Mo/Si interfaces, respectively. The external mechanical stress applied caused bending of the substrate and adherent ML, with an accompanied internal stress of approximately 60 GPa. An important outcome of the investigation was that dedicated release bending of MLs can reduce/compensate the influences of the internal stressed states. Thermal stability could be increased for both ML systems during sample annealing. For ML samples with additional B₄C and C layers at the Mo/Si interfaces, the influence of external stress was more significant compared to that for pure Mo/Si MLs. This indicates that the additional layers mainly act as diffusion barriers and additionally as stress-relaxing buffers. PACS 68.60.Dv; 68.65.Ac; 42.79.Bh     

质子辐照下Mo/Si多层膜反射镜的微观结构状态

利用透射电子显微镜对质子辐照前后空间太阳望远镜Mo/Si多层膜的微观结构进行了表征, 并对其辐照前后反射率的变化进行了测量.研究表明, Mo/Si多层膜经质子辐照后形成了一些缺陷结构,局部区域Mo/Si的周期性遭到破坏, Mo层与Si层的宽度发生了变化,多层膜层与层之间的界面也比辐照前更为粗糙,部分层状结构由于质子辐照发生了明显的扭曲和折断等现象;此外,质子辐照导致了Mo/Si多层膜反射率的下降,这些微观缺陷的形成是光学性能降低的直接诱因. 关键词： 空间太阳望远镜 Mo/Si多层膜 微观结构 反射率     

Study on the composition and phase change of BaO/Hf/Mo under high temperature

Hafnium films were deposited onto the molybdenum grids by radio-frequency magnetron sputtering from an Hf target in argon gas. Emission current of Mo grids coated with and without Hf film during the lifetime testing, which were contaminated by active electron-emission substances (i.e. Ba or BaO) from the cathode, were measured using an analogous-diode method. The results show that emission current from the Mo grid coated with Hf film is much less than that from the Mo grid without Hf film. The BaO layer was deposited on Hf/Mo substrates by chemical method in order to simulate the working conditions of the grids contaminated by electron-emission substances from the cathode. The suppression mechanism of electron emission from the Mo grid coated with Hf film is discussed according to the experimental results and the calculation of the reaction free energy.     

Influence of oxygen on diffusion in the Cu/Mo/Au system

The annealing behaviour of the Cu/Mo/Au metallization system is investigated. Backscattering spectrometry reveals a rapid diffusion of Cu and Au across the Mo film and the formation of AuCu after annealing at 600°C for 30 min in vacuum, but only when no impurity is detected in the as-deposited polycrystalline Mo layer. The Au-Cu interaction is impeded when 5.5 at% of oxygen is introduced in the as-deposited Mo layer. The thin film microstructures are analyzed using X-ray diffraction and transmission electron microscopy. The thermal stability difference between the samples with a pure Mo layer and a contaminated Mo layer is discussed in terms of fast diffusion process inhibited by a grain boundary decoration with oxygen atoms.     

Luminescence study of pure and Fe- or Mo-doped ZnWO4 crystals

ZnWO₄, ZnWO₄:Fe and ZnWO₄:Mo crystals were investigated by the methods of time-resolved spectroscopy in the temperature range of 4.2–300 K. It is shown that the Mo and Fe impurities significantly reduce the light yield of ZnWO₄. The main 2.5 eV emission of ZnWO₄ and the 1.77 eV emission band of ZnWO₄:Mo are shown to originate from the triplet excited state of the WO₆ and MoO₆ complex, respectively. In ZnWO₄:Fe,Mo the MoO₆ emission band is shifted to lower energies due to the perturbing influence of the iron impurity. No perturbing effect of Fe or Mo ions was observed for the main emission of ZnWO₄:Fe and ZnWO₄:Mo. The creation spectrum of self-trapped holes was measured for ZnWO₄, ZnWO₄:Fe and ZnWO₄:Mo crystals in the energy region of 4–30 eV.