计及溅射损失的平行板静电场法离子引出和收集

采用粒子模拟-Monte Carlo碰撞(particle in cell_Monte Carlo collision)方法研究了 原子蒸气激光同位素分离工程中一维平行板静电场法离子引出和收集过程，记录引出离子的 能量分布和角度分布，计算离子在收集板上造成的溅射损失.模拟结果表明，增加引出电压 可以缩短引出时间，降低碰撞损失，但是增加了溅射损失，使得收集率降低；增加电子温度 可以缩短引出时间，提高收集率；增加初始等离子体密度将使引出时间增加，收集率降低；而目标同位素丰度较高的情况下，离子引出过程的碰撞损失 关键词： 原子蒸气激光同位素分离 离子引出 溅射     

用自洽的蒙特卡罗—流体结合模型模拟溅射过程

 采用自洽的蒙特卡罗－流体结合模型对溅射过程进行模拟,以了解等离子体粒子行为与溅射参数的关系。溅射过程包括气体放电和溅射原子传输。对于气体放电,蒙特卡罗部分模拟快电子和快气体原子,而流体部分则描述离子和慢电子。对于溅射原子传输,蒙特卡罗部分模拟溅射原子的碰撞过程,而流体部分则描述溅射原子的扩散和漂移。模拟的结果包括：等离子体粒子的密度和能量分布;不同电离机制对气体原子和溅射原子电离的贡献;不同等离子体粒子对阴极溅射碰撞的贡献;溅射原子的密度分布;溅射场和溅射粒子相对于入射离子能量和角度的分布;溅射原子经碰撞后在整个等离子体区的分布。     

离子引出收集的沉积与溅射研究

研究离子引发收集过程中的沉积和溅射特性,给出了离子沉积和溅射的数理模型,其中重点分析了结合能、捕获概率和溅射系数这几个参数的物理意义和计算公式,给出了收集板总收集量和损失量.并且用计算机模拟了收集板的收集,给出不同的离子入射能量下入射离子元素沉积厚度和不同元素靶对各入射离子溅射特性的影响.得出以下的结论:随着离子沉积在收集板表面涂层厚度的增加溅射率也增加;离子的引出电压不是越高越好;轻质量离子的总收集率比较小;入射离子沉积和溅射特性和收集板靶原子质量有关,质量轻的金属材料作收集板,有利于提高离子的收集率. 关键词： 溅射 捕获概率 溅射概率     

溅射及其应用

当入射离子能量超过靶材料的溅射阈能时,就会发生溅射现象.离子刻蚀和薄膜生长乃是溅射实际应用中的两个重要方面. 一、溅射的物理基础1.溅射率随寓子入射能量的变化 一个离子轰击靶表面时,被溅射出来的靶原子数目称为溅射率S(原子数/离子).溅射率S随入射离子能量E的变化而变化     

考虑溅射损失的RF共振法离子引出和收集

采用PIC-MCC方法研究了AVLIS工程中一维RF共振法离子引出和收集过程，重点研究离子在收 集板上造成的溅射损失以及离子的收集效率.模拟结果表明，RF共振法与平行板静电场法相 比，引出时间较短，碰撞损失和溅射损失较低，收集率较高；增加引出电压，可以缩短引出 时间，降低碰撞损失，但是增加了溅射损失，使得收集率降低；增大磁场强度，使碰撞损失 降低，溅射损失增加，收集率降低. 关键词： AVLIS PIC-MCC 离子引出 溅射     

多组分固体表面的择优溅射

近十多年来,由于表面分析技术发展的需要,对许多固体材料开展了离子溅射研究[1].从合金和化合物的溅射研究发现,离子轰击能改变材料的表面成分[2].研究多组分固体的表面成分在离子束作用下的变化,对阐明入射离子与靶原子间的作用,了解各成分原子在表面上的结合特性以及进行表面成分分析,都是十分必要的[3].本文将简要说明目前对多组分固体表面离子溅射的了解,并讨论择优溅射对表面分析结果的影响. 一、溅射过程和择优溅射 在表面科学研究中常使用几百至几千电子伏能量的离子进行固体表面溅射.溅射时入射离子大部分进入固体体内,与固体原子产…     

离子溅射(Ⅰ)

荷能粒子轰击固体表面,打出离子和中性原子的现象称为溅射.由于离子易于在电磁场中加速或偏转,所以荷能粒子一般为离子,称这种溅射为离子溅射.随着真空技术、薄膜技术、表面分析技术以及表面科学的发展。离子溅射的用途越来越广泛,其重要性也日益为人们所共知.如今,离子溅射在溅射离子源、二次离子质谱分析(SIMS)、离子束分析、溅射镀膜、离子镀、离子和离子束刻蚀、表面微细加工等领域有广泛的应用.同时,溅射理论在分析核材料的辐照损伤,防止聚变堆中的等离子体沾污,研究离子注入、离子束混合等方面也有重要意义. 离于溅射理论经历了漫长…     

C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明,随着C⁺离子的入射能量增大,C⁺离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C⁺离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C⁺离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。     

260～520 keV Krq+ (8≤q≤17)离子轰击Al靶产生的可见光辐射

低速高电荷态离子与金属表面相互作用,原子从靶材表面溅射,其中一部分处于激发态的溅射原子通过辐射退激产生可见光。在这一相互作用过程中,低速高电荷态离子从靶材表面捕获一个或多个电子进入其激发态,这些处于激发态的入射离子也会通过辐射退激产生可见光。研究表明,离子在靶材中的核阻止本领与溅射原子产额密切相关。为了更好地理解溅射原子的激发过程,认识低速高电荷态离子与金属相互作用过程中,溅射原子的激发概率与入射离子动能和势能之间的关联,研究了260～520 keV Krq+ (8≤q≤17)离子与Al靶相互作用过程中的可见光发射。给出了520 keV Kr13+ 与Al表面相互作用过程中,发射300～550 nm波长范围的发射光谱。实验结果包括溅射的Al原子在309.0和395.9 nm处的共振跃迁,Al+和Al2+分别在358.3和451.6 nm处的共振跃迁,以及Kr+在430.0,434.1,465.8和486.0 nm处的共振跃迁。还给出了谱线强度比值Y(309.0)/Y(395.9),Y(358.5)/Y(395.9),Y(452.8)/Y(395.9)随入射离子动能和势能的变化。结果表明：谱线强度比值均随入射离子动能的增加而增大,而比值Y(309.0)/Y(395.9)随势能的增加而减小。分析表明,在低速高电荷态离子与Al靶相互作用过程中,动能（电子阻止本领）和势能共同作用导致Al原子的激发,与激发态Al(4s)相比,电子布居较高激发态Al(3d)的概率随着离子电子阻止本领的增加而增大,而随着离子势能增加而减小。在低速高电荷态离子与金属表面相互作用过程中,入射离子在靶材中的核阻止本领影响溅射原子产额,而电子阻止本领与激发概率相关。在这一作用过程中,动能和势能共同决定溅射原子的激发概率,当动能和势能在同一数量级时,动能作用比势能作用小两个量级。     

复合电磁磁控溅射靶及其镀膜方法

平面磁控溅射镀膜是70年代发展起来的新型镀膜技术,目前已在工业上镀制各种机械和物理功能膜. 溅射镀膜技术的物埋基础是载能离子的溅射效应.能量超过数十电子伏的离子射到靶材表面即可将靶材表面的原子击出.溅射的原子沉积到工件上,即实现溅射镀膜. 最简单的溅射镀膜技术是二极溅射.该装置相当于一个大型的气体辉光放电管,以靶材作为阴极,机壳作为阳极(图1).两极之间加上千伏以上的电压以产生辉光放电,并加速等离子体中的离子,使其轰击靶村,产生溅射效应. 磁控溅射是70年代迅速发展起来的新型溅射技术.其特点是在靶材表面建立一个环状跑道…     

Energy exchange in structure scattering: a molecular dynamics study for Cs from Pt(1 1 1)

We have employed a classical molecular dynamics simulation to investigate the energy transfer of a heavy projectile ion to a surface, i.e. Cs⁺ impacting onto Pt(1 1 1), for incidence energies between 25 and 100 eV and an incidence angle of 45°. The in-plane scattering results show a continuous increase of the final energy with increasing scattering angle. All scattering intensities have a main supraspecular peak and scattering into subspecular angles increases with increasing incidence energy. The large projectile/target mass ratio causes a high energy loss and a strong angular dependence of the final energy distribution. The trends of the energy transfer and its angular dependence can be understood in terms of a binary collision model, augmented with double collisions and an the image charge correction. Backscattering at high incidence energies leads to a distribution of very low final energies, indicating the onset of surface sputtering. Peaks in the energy spectra arise from impact site dependent scattering and can be assigned to single, double, triple or sputtering type collisions.     

Temperature dependence of angular characteristics of boron nitride sputtering

The angular dependence of the sputtering yield and the spatial distribution of particles ejecting from a boron nitride polycrystal with a wurtzite structure in the temperature range from 0 to 2800°C under bombardment with 300 eV xenon ions are calculated by the molecular dynamics method. A reduction of steepness of the curves of angular dependence of boron nitride sputtering with increasing temperature is revealed. Features of the obtained distributions are analyzed on the basis of mechanisms of interaction of slow heavy ions with surface target atoms.     

聚变α粒子对第一壁辐照损伤的蒙特-卡罗研究(Ⅱ)——溅射

本文应用蒙特-卡罗方法研究聚变α粒子对不锈钢第一壁的溅射损伤。首先,计算单种元素Fe,Cr,Ni的溅射产额随入射能量的变化,并与实验结果比较,以确定计算中所用到的一些重要参数,如原子位移能等。在此基础上计算聚变α粒子对不锈钢(Fe_0.73Cr_0.18Ni_0.09)的部分(和总)溅射产额,溅射粒子的能谱、角分布和源深度分布,以及上述各量与α粒子入射角的关系。结果表明,在考虑入射α粒子随能量及入射角的分布后,其平均总溅射产额为0.375。由于1     

Anisotropic angular distribution of sputtered atoms

The sputtering yield angular distributions have been calculated on the basis of the ion energy dependence of total sputtering yields for Ni and Mo targets bombarded by low-energy Hg⁺ ions. The calculated curves show excellent agreement with the corresponding Wehner's experimental results of sputtering yield angular distributions. This fact clearly demonstrates the intrinsic relation between the ion energy dependence of total sputtering yields and the sputtering yield angular distribution. This intrinsic relation had been ignored in Yamamura's papers [Yamamura, Y. (1982). Theory of sputtering and comparison to experimental data, Nucl. Instr. and Meth., 194, 515–522; Yamamura, Y. (1981). Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms, Rad. Eff., 55, 49–55.] due to some obvious mistakes.     

Angular distributions of sputtered atoms for low-energy nitrogen irradiation of silicon

We studied the angular distributions of silicon and nitrogen atoms emitted from a Si target subjected to reactive sputtering by N ₂ ⁺ ions at primary energies of 0.5 and 2keV. The composition of the deposited material does not depend strongly on the substrate position. From a comparison with nonreactive sputtering, we show that the observed shift of the Si angular distribution is mainly due to the contribution of collision events occurring in the first monolayer. Contrary to the case of noble gas ions, the sharpness of the Si distribution depends on the N ₂ ⁺ energy. The behavior of the differential sputtering yield of silicon indicates that this effect is likely to be due to a loss of recoil atoms out of the preferential direction. A possible explanation of the observed phenomena consists in assuming an anisotropic emission of Si _x N _y radicals. This hypothesis is very attractive as it could satisfactorily explain the similarity we observed between the angular distributions of silicon and nitrogen.     

Sputtering studies with the Monte Carlo Program TRIM.SP

The Monte Carlo Program TRIM.SP (sputtering version of TRIM) was used to determine sputtering yields and energy and angular distributions of sputtered particles in physical (collisional) sputtering processes. The output is set up to distinguish between the contributions of primary and secondary knock-on atoms as caused by in- and outgoing incident ions, in order to get a better understanding of the sputtering mechanisms and to check on previous theoretical models. The influence of the interatomic potential and the inelastic energy loss model as well as the surface binding energy on the sputtering yield is investigated. Further results are sputtering yields versus incident energy and angle as well as total angular distributions of sputtered particles and energy distributions in specific solid angles for non-normal incidence. The calculated data are compared with experimental results as far as possible. From this comparison it turns out that the TRIM.SP is able to reproduce experimental results even in very special details of angular and energy distributions.     

Interaction of MEV atomic ions with molecular solids: Ion track structure and sputtering phenomena

Recent results obtained in our research groups from studies of the interactions of swift, heavy atomic ions with molecular solids are concisely outlined. The focus is on material ejection (sputtering) and surface track formation. The experimental techniques employed include time-of-flight mass spectrometry, energy analysis, collection and analysis of sputtered material, and scanning force microscopy. Characteristics of the sputtering process probed include the sputtering yield, radial and axial velocity distributions, angular distributions, and surface track morphology. Besides reviewing and correlating experimental results, we also emphasize the common quasi-thermal origin of pressure-pulse/hydrodynamic and evaporative spike sputtering models.