Influence of coating material on laser damage threshold of TiO_2 films

The optical property,structure,surface properties(roughness and defect density)and laser-induced dam- age threshold(LIDT)of TiO_2 films deposited by electronic beam(EB)evaporation of TiO_2(rutile),TiO_2 (anatase)and TiO_2 Ta_2O_5 composite materials are comparatively studied.All films show the polycrys- talline anatase TiO_2 structure.The loose sintering state and phase transformation during evaporating TiO_2 anatase slice lead to the high surface defect density,roughness and extinction coefficient,and low LIDT of films.The TiO_2 Ta_2O_5 composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated.Guidance of selecting materials for high LIDT laser mirrors is given.     

Laser-induced damage of high reflectors for Ti:sapphire laser system

A broadband(～176nm,R>98%,λo=800nm)and high laser-induced damage threshold(LIDT= 2.4J/cm~2)TiO_2/HfO_2/SiO_2 high reflector(HR)for Ti:sapphire chirped-pulse amplification(CPA)laser system is fabricated by the electron beam evaporation.The refractive index and extinction coefficient of TiO_2 and HfOu films are calculated from single-layer films' transmittance spectra.The properties of HR are mainly determined by the high refractive index material.The high refractive index leads to wide bandwidth.A low extinction coefficient indicates low absorption and high LIDT.The possible damage mechanism of HR is discussed.     

Study on absorbance and laser damage threshold of HfO_2 films prepared by ion-assisted reaction deposition

Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.     

Ti:sapphire laser pumped high average power laser crystal Nd:GGG with high efficiency output

High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.     

Surface modulation of silicon surface by excimer laser at laser fluence below ablation threshold

Controlled single step fabrication of silicon conical surface modulations on [311] silicon surface is reported utilizing KrF excimer laser [λ=248 nm] at laser fluence below ablation threshold laser fluence. When laser fluence was increased gradually from 0 to 0.2 J/cm² for fixed 200 numbers of shots; first nanopores are observed to form at 0.1 J/cm², then very shallow nanocones evolve as a function of laser fluence. At 0.2 J/cm², nanoparticles are observed to form. Up to 0.15 J/cm² the very shallow nanocone volume is smaller but increases at a fast rate with laser fluence thereafter. It is observed that the net material volume before and after the laser irradiation remains the same, a sign of the melting and resolidification without any ablation.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold(LIDT)of dielectric antireflection(AR) coating is proposed.Compared with AR film stack of H2.5L(H:HfO_2,L:SiO_2)on BK7 substrate,SiO_2 interfacial layer with four quarter wavelength optical thickness(QWOT)is deposited on the substrate before the preparation of H2.5L film.It is found that the introduction of SiO_2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings.The measured LIDT is enhanced by about 50%,while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm.Detailed mechanisms of the LIDT enhancement are discussed.     

Comparison of different side-pumping configurations for high power laser diode pumped solid-state laser

Ray-tracing method is used to simulate the distribution of absorption in crystal rod for different side-pumping configuration. The distribution of pumping power and absorption efficiency is compared, and the numerical results are presented. The results show that the more uniform pumping and the higher absorption coefficient are obtained with a diffuse cavity. And the method of the slow axis of laser diode stack perpendicular to the axis of lasing gives the higher central pumping density.     

Suppressing the preferential o-polarization oscillation in a high power Nd：YVO4 laser with wedge laser crystal

We observe the phenomenon of priority oscillation of the unexpected a-polarization in high-power Nd：YVO4 ring laser. The severe thermal lens of the a-polarized lasing, compared with the n-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd：YVO4 crystal as the gain medium, the unexpected a-polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected zc-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no a-polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated.     

Scaling of Yb-doped photonic crystal fiber to 200 μm core diameter for high beam quality laser output

The rare earth-doped active fibers not only have ten thousands of square-micron core-area but also deliver a laser with near-diffraction-limited beam quality. However, they have been studied little. In this paper, we design a 200-μm-corediameter Yb~(3+)-doped photonic crystal fiber with a large pitch in the air-hole cladding region. Simulations demonstrate that only fundamental mode(FM) with a mode field area(MFA) of ～ 28000 μm~2 can be amplified and propagated at the gain saturation, and the beam quality M~2 is about 1.5. It is predicted that almost 105 m J single-pulse energy is available from such a 1.5-meter-length fiber.     

Design of tunable wavelength microcavity organic electroluminescent diode with liquid crystal

A novel designed method for tunable wavelength microcavity organic electroluminescent diode (MOLED) based on the birefringence of liquid crystal was presented. By modulated the refractive index of liquid crystal, the device could radiate with different wavelength continuously. The simulated result showed that the tunable range could reach to 60 nm and the full width of half maximum is 5.5 nm. The device could be applied to wavelength converter and tunable light source.     

热退火对KDP晶体损伤阈值的影响（英）

研究了不同退火温度下磷酸二氢钾（KDP）晶体的透过光谱和损伤阈值的变化。发现热退火对晶体的透过光谱没有影响,退火温度分别为140 ℃和160 ℃时晶体的损伤阈值没有明显变化。但是在150 ℃下,晶体的损伤阈值提高了约1.4倍。实验证明150 ℃下的热退火对提高晶体的损伤阈值效果最好。     

热退火对KDP晶体损伤阈值的影响（英）

研究了不同退火温度下磷酸二氢钾（KDP）晶体的透过光谱和损伤阈值的变化。发现热退火对晶体的透过光谱没有影响,退火温度分别为140 ℃和160 ℃时晶体的损伤阈值没有明显变化。但是在150 ℃下,晶体的损伤阈值提高了约1.4倍。实验证明150 ℃下的热退火对提高晶体的损伤阈值效果最好。     

膜系结构对激光损伤阈值的影响

本文以TiO_2/SiO_2及ZrO_2/SiO_2膜系为例,研究了A(HL)~mHG、A[(2p+1)HL]~m(2p+1)HG以及A[H(2q+1)L]~mHG等不同膜系结构对激光损伤阈值的影响.同时结合光学损耗测量及保护膜厚度效应研究,对光学薄膜的激光损伤机理作了初步探讨.     

聚乙二醇对溶胶-凝胶SiO2增透膜激光损伤行为的影响

采用溶胶-凝胶工艺制备了聚乙二醇（PEG）改性SiO2单层增透膜,用输出波长1.06 μm,脉宽3 ns的调Q激光系统产生的强激光进行辐照实验。观察了添加PEG前后的膜层的微结构、表面形貌以及激光损伤行为的变化,讨论了PEG对薄膜激光损伤行为产生影响的机制。结果表明：添加的PEG可以修饰、导向溶胶簇团的生长和交联,并使之有序,由此制备的薄膜结构规整,微缺陷减少,这就提高了膜层的激光损伤阈值;在激光辐照过程中,膜料吸收激光能量,膜层温度升高,膜层的PEG分子受热逐步分解挥发,膜层产生损伤。     

SiO2半波覆盖层对HfO2/SiO2高反膜激光损伤的影响

 研究了SiO₂半波覆盖层对HfO₂/SiO₂高反射膜1064nm激光损伤的影响,分析薄膜的激光损伤特性及图貌得出, 对于单脉冲（1-ON-1）激光损伤,SiO₂半波覆盖层能提高HfO₂/SiO₂高反膜的激光损伤阈值;可显著降低激光损伤程度,减小灾难性损伤发生的概率;可大幅度提高HfO₂/SiO₂高反膜膜的抗激光损伤能力。     

KDP晶体微纳米加工表层缺陷对其激光损伤阈值的影响

使用有限元方法分析了在激光辐照条件下,KDP晶体已加工表面存在的残余内应力、微裂纹及微孔等多种微纳米加工表层缺陷对晶体激光损伤阈值的影响。通过分析发现：KDP晶体微纳米加工表层缺陷的存在,会影响晶体表面的温度场及热应力场的分布,使入射激光的能量积聚在缺陷附近的很小范围内,造成晶体缺陷处产生局部熔融现象,从而使KDP晶体产生损伤,降低KDP晶体的激光损伤阈值。针对微纳米表层的微裂纹进行了损伤阈值测试实验,结果表明微裂纹的存在会降低KDP晶体的激光损伤阈值（约降低3 J/cm2）,实验结果与仿真结果符合得很好。     

KDP晶体微纳米加工表层缺陷对其激光损伤阈值的影响

使用有限元方法分析了在激光辐照条件下,KDP晶体已加工表面存在的残余内应力、微裂纹及微孔等多种微纳米加工表层缺陷对晶体激光损伤阈值的影响。通过分析发现:KDP晶体微纳米加工表层缺陷的存在,会影响晶体表面的温度场及热应力场的分布,使入射激光的能量积聚在缺陷附近的很小范围内,造成晶体缺陷处产生局部熔融现象,从而使KDP晶体产生损伤,降低KDP晶体的激光损伤阈值。针对微纳米表层的微裂纹进行了损伤阈值测试实验,结果表明微裂纹的存在会降低KDP晶体的激光损伤阈值(约降低3J/cm2),实验结果与仿真结果符合得很好。     

溶胶-凝胶方法制备ZrO2及聚合物掺杂ZrO2单层光学增反射膜

以丙醇锆(Zr(OPr)₄)为原料，乙酸(HAc)为络合剂，聚乙二醇(PEG200)和聚乙烯吡咯烷酮(PVP)为大分子添加剂，在乙醇体系中成功合成了ZrO₂及聚合物掺杂ZrO₂溶胶.用旋涂法在K9玻璃基片上制备单层光学增反射膜.借助小角X射线散射和激光动态光散射技术研究胶体的微结构.采用傅里叶变换红外光谱、差示扫描量热分析、X射线衍射分析、原子力显微镜、紫外/可见/近红外透射光谱以及椭偏仪对薄膜的结构和光学性能进行表征.用输出波长为1064 关键词： 二氧化锆 溶胶-凝胶 增反射膜 激光损伤     

不同方法DKDP晶体生长和损伤阈值

生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法,利用同种原料从氘化程度为85%的溶液生长了DKDP晶体,并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明,不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反,即由于生长溶液过饱和度的差别,点籽晶快速生长法晶体生长速度为传统方法的10倍,但晶体损伤阈值下降了50%,且紫外波段透过性能下降明显。     

不同方法DKDP晶体生长和损伤阈值

生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法,利用同种原料从氘化程度为85%的溶液生长了DKDP晶体,并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明,不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反,即由于生长溶液过饱和度的差别,点籽晶快速生长法晶体生长速度为传统方法的10倍,但晶体损伤阈值下降了50%,且紫外波段透过性能下降明显。