A Self-Formed Stable PbI2/NiOx Interface with Increased Ni3+ Centers for Perovskite Photovoltaics

Nickel oxide (NiO_x) is a promising hole transport material (HTM) for perovskite photovoltaics owing to its chemical stability and low cost. However, most NiO_x based solar cells deliver relatively weak performance because of its insufficient electrical property and interfacial contact. In this work, a self-formed PbI₂/NiO_x interface was developed to stabilize the Ni³⁺ centers, which was beneficial for electrical transport and band alignment in perovskite solar cells. Combined with ultraviolet ozone treatment ( UVO ) and sequential deposition, the density of Ni³⁺ centers was greatly increased and could be stabilized by the PbI₂ interface. These merits contributed coordinately to the fast hole extraction and low energy loss across the PbI₂/NiO_x interface, yielding power conversion efficiencies (PCEs) of over 19 %.     

Silole‐containing polymers for high‐efficiency polymer solar cells

Silole‐containing conjugated polymers ( P1 and P2 ) carrying methyl and octyl substituents, respectively, on the silicon atom were synthesized by Suzuki polycondensation. They show strong absorption in the region of 300–700 nm with a band gap of about 1.9 eV. The two silole‐containing conjugated polymers were used to fabricate polymer solar cells by blending with PC₆₁BM and PC₇₁BM as the active layer. The best performance of photovoltaic devices based on P1 /PC₇₁BM active layer exhibited power conversion efficiency (PCE) of 2.72%, whereas that of the photovoltaic cells fabricated with P2 /PC₇₁BM exhibited PCE of 5.08%. 1,8‐Diiodooctane was used as an additive to adjust the morphology of the active layer during the device optimization. PCE of devices based on P2 /PC₇₁BM was further improved to 6.05% when a TiO_x layer was used as a hole‐blocking layer. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Aqueous solution-processed NiOx anode buffer layers applicable for polymer solar cells

A green and facile method has been developed for the room temperature and aqueous solution preparation of NiO_x film as anode buffer layers for polymer solar cells (PSCs). The NiO_x buffer layer is prepared simply by spin-coating nickel acetylacetonate precursor-based aqueous solution onto ITO substrate at room temperature in air. UV-ozone post-treatment promotes the formation of dipolar NiOOH species on the film surface, resulting in the anode buffer layer with suitable work function. PSCs have been fabricated with the device structure of ITO/NiO_x/photoactive layer/PFN/Al. The power conversion efficiencies of the PSCs based on PTB7:PC₇₁BM blends (8.43%) and P3HT:PC₇₁BM blends (3.04%) with NiO_x anode buffer layer are comparable to those with the commonly used PEDOT:PSS anode buffer layer. In addition, the devices made with NiO_x buffer layer exhibit much better air stability than those with PEDOT:PSS. These results indicate that the water solution processed NiO_x film at room temperature in air is a promising anode buffer layer for efficient and stable PSCs. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 747–753     

Dopant-free NiOx Nanocrystals: A Low-cost and Stable Hole Transport Material for Commercializing Perovskite Optoelectronics

Advancing inverted (p-i-n) perovskite solar cells (PSCs) is critical for commercial applications given their compatibility with different bottom cells for tandem photovoltaics, low-temperature processability (≤100 °C), and promising operational stability. Although inverted PSCs have achieved an efficiency of over 25 % using doped or expensive organic hole transport materials (HTMs), their synthesis cost and stability still cannot meet the requirements for their commercialization. Recently, dopant-free and low-cost non-stoichiometric nickel oxide nanocrystals (NiO_x NCs) have been extensively studied as a low-cost and effective HTM in perovskite optoelectronics. In this minireview, we summarize the synthesis and surface-functionalization methods of NiO_x NCs. Then, the applications of NiO_x NCs in other perovskite optoelectronics beyond photovoltaics are discussed. Finally, we provide a perspective for the future development of NiO_x NCs for the commercialization of perovskite optoelectronics.     

Manipulation of the Buried Interface for Robust Formamidinium-based Sn−Pb Perovskite Solar Cells with NiOx Hole-Transport Layers

Low band gap tin-lead perovskite solar cells (Sn−Pb PSCs) are expected to achieve higher efficiencies than Pb-PSCs and regarded as key components of tandem PSCs. However, the realization of high efficiency is challenged by the instability of Sn²⁺ and the imperfections at the charge transfer interfaces. Here, we demonstrate an efficient ideal band gap formamidinium (FA)-based Sn−Pb (FAPb_0.5Sn_0.5I₃) PSC, by manipulating the buried NiO_x/perovskite interface with 4-hydroxyphenethyl ammonium halide (OH-PEAX, X=Cl⁻, Br⁻, or I⁻) interlayer, which exhibits fascinating functions of reducing the surface defects of the NiO_x hole transport layer (HTL), enhancing the perovskite film quality, and improving both the energy level matching and physical contact at the interface. The effects of different halide anions have been elaborated and a 20.53 % efficiency is obtained with OH-PEABr, which is the highest one for FA-based Sn−Pb PSCs using NiO_x HTLs. Moreover, the device stability is also boosted.     

Large area,waterproof, air stable and cost effective efficient perovskite solar cells through modified carbon hole extraction layer

The conventional unstable and expensive hole transporting materials (HTM) has been replaced by cost effective modified carbon hole extraction layer. Herein, we demonstrated a new recipe toward air stable and waterproof modified carbon hole extraction layer for efficient perovskite solar cells (PSCs). The commercial available carbon ink modified with methylammonium lead iodide (MAI) has been used as hole extraction layer for ambipolar perovskite solar cells. The fabricated optimized perovskite solar cell having Glass/FTO/mp-TiO₂/MAPbI_3-xCl_x/carbon + MAI/Carbon configuration exhibited η = 13.87% power conversion efficiency (PCE) with open circuit voltage (V_OC) 0.997 V, current density (J_SC) = 21.41 mAcm^?2 and fill factor (FF) 0.65. Furthermore, the air stability were tested at room temperature in open atmosphere. The water proof stability was tested under water flushing. Our results revealed that, although our carbon based devices show lower PCE (η = 13.87%) compared to spiro-MeOTAD HTM (η = 15%), the fabricated PSCs could even retain >90% after water exposure >20 times and ambient air stability more than 160 days. Further the large area device (>1 cm²) device shows 13.04% PCE with Jsc = 21.47 mAcm^?2, V_OC = 0.996 V and FF = 0.61. We have also demonstrated >13% efficiency for large area device (>1.1 cm²), demonstrating that the developed method is simple, cost effective and promising towards large area device fabrication. The developed methodology based on low cost carbon hole extraction layer will be helpful towards waterproof and air stable perovskite solar cells for large-area devices.     

Defect and doping concentration study with series and shunt resistance influence on graphene modified perovskite solar cell: A numerical investigation in SCAPS-1D framework

Perovskite solar cells (PSCs) have the potential to be highly efficient, low-cost next-generation solar cells. By raising open circuit voltage (V_oc), the interfacial recombination kinetics can further improve device performance. In this study, we used simulation concept to elucidate the influence of using graphene as a surface passivation material in perovskite solar cells. Graphene works well as an interlayer to promote hole extraction and reduce interfacial recombination. In order to evaluate the effect of graphene in PSCs, the simulation was done in the SCAPS-1D framework to compare the performance of a device with and without graphene. Three interface layers were included to the model: TiO₂/MAPbI₃, MAPbI₃/Graphene, and Graphene/Spiro-OMeTAD, in order to account for the impacts of interface defect density on device performance. The impacts of absorber doping concentration, absorber defect density, ETL doping concentration, HTL doping concentration, series resistance, and shunt resistance were also evaluated for the modelled PSC. Without any optimization, the control device with power conversion efficiency (PCE) of 20.677% was outperformed by the graphene-modified device with PCE of 20.911%. This difference is mostly due to the lower recombination losses and more effective suppression of interfacial non-radiative recombination. With optimization, the modified graphene-based device has a PCE of 26.667%. This result shows an enhancement of ∼1.28 times over that of the pristine graphene-based device. The outcomes have opened the way for the development of cost-effective and comparable state-of-the-art, high-efficiency perovskite solar cells with graphene interlayer by eliminating defects and managing non-radiative recombination.     

A Multifunctional Polymer as an Interfacial Layer for Efficient and Stable Perovskite Solar Cells

Metal-cation defects and halogen-anion defects in perovskite films are critical to the efficiency and stability of perovskite solar cells (PSCs). In this work, a random polymer, poly(methyl methacrylate-co-acrylamide) (PMMA-AM), was synthesized to serve as an interfacial passivation layer for synergistically passivating the under-coordinated Pb²⁺ and anchor the I^- of the [PbI₆]⁴⁻ octahedron. Additionally, the interfacial PMMA-AM passivation layer cannot be destroyed during the hole transport layer deposition because of its low solubility in chlorobenzene. This passivation leads to an enhancement in the open-circuit voltage from 1.12 to 1.22 V and improved stability in solar cell devices, with the device maintaining 95 % of the initial power conversion efficiency (PCE) over 1000 h of maximum power point tracking. Additionally, a large-area solar cell module was fabricated using this approach, achieving a PCE of 20.64 %.     

Enhancement of the efficiency and stability of planar p-i-n perovskite solar cells via incorporation of an amine-modified fullerene derivative as a cathode buffer layer

A methanol-soluble diamine-modified fullerene derivative (denoted as PCBDANI) was applied as an efficient cathode buffer layer (CBL) in planar p-i-n perovskite solar cells (pero-SCs) based on the CH₃NH₃PbI_3–x Cl _x absorber. The device with PCBDANI single CBL exhibited significantly improved performance with a power conversion efficiency (PCE) of 15.45%, which is approximately 17% higher than that of the control device without the CBL. The dramatic improvement in PCE can be attributed to the formation of an interfacial dipole at the PCBM/Al interface originating from the amine functional group and the suppression of interfacial recombination by the PCBDANI interlayer. To further improve the PCE of pero-SCs, PCBDANI/LiF double CBLs were introduced between PCBM and the top Al electrode. An impressive PCE of 15.71% was achieved, which is somewhat higher than that of the devices with LiF or PCBDANI single CBL. Besides the PCE, the long-term stability of the device with PCBDANI/LiF double CBLs is also superior to that of the device with LiF single CBL.     

Electrochemical properties of doped lantanum–nickelate-based electrodes

This work is devoted to the studying of effects of La₂NiO₄ doping with alkaline-earth elements: Ca, Sr, and Ba (at an amount of 15 mol %) on its structural, electrical, and electrochemical properties. The effects of the alkaline-earth element nature, introduction of the Ce_0.8Sm_0.2O_1.9-electrolyte (SDC) component to the functional layer, and the presence of collecting film onto electrochemical activity of the electrodes contacting the Ce_0.8Sm_0.2O_1.9-electrolyte are examined. The doping was found to increase the La2NiO4 full conductivity due to increase in the hole conductivity. The maximal conductivity (at the sample density of 86–89%) was obtained for the Ca-doped composition: 85 S/сm at 700°C, as compared with 65 S/сm for undoped La₂NiO₄. at the same time, the doping was found to deteriorate the electrodes’ electrochemical activity which is likely to be due to loss of interstitial oxygen as a result of the doping. The using of composite electrodes allows increasing polarization conductivity markedly. For instance, at 700°С the conductivity of La₂NiO₄ is 0.25 S/сm²; of its based composite, 0.67 S/сm².     

Ti3C2Tx-Modified PEDOT:PSS Hole-Transport Layer for Inverted Perovskite Solar Cells

PEDOT:PSS is a commonly used hole-transport layer (HTL) in inverted perovskite solar cells (PSCs) due to its compatibility with low-temperature solution processing. However, it possesses lower conductivity than other conductive polymers and metal oxides, along with surface defects, limiting its photovoltaic performance. In this study, we introduced two-dimensional Ti₃C₂T_x (MXene) as an additive in the PEDOT:PSS HTL with varying doping concentrations (i.e., 0, 0.03, 0.05, and 0.1 wt.%) to tune the electrical conductivity of PEDOT:PSS and to modify the properties of the perovskite film atop it. We noted that the grain size of the CH₃NH₃PbI₃ (MAPI₃) perovskite layer grown over an optimal concentration of MXene (0.03 wt.%)-doped PEDOT:PSS increased from 250 nm to 400 nm, reducing charge recombination due to fewer grain boundaries. Ultraviolet photoelectron spectroscopy (UPS) revealed increased work function (WF) from 4.43 eV to 4.99 eV with 0.03 wt.% MXene doping, making the extraction of holes easier due to a more favorable energy level alignment with the perovskite. Quantum chemical investigations based on density functional theory (DFT) were conducted at the ωB97XD/6-311++G(d,p) level of theory to provide more insight into the stability, bonding nature, and optoelectronic properties of the PEDOT:PSS–MXene system. The theoretical investigations revealed that the doping of PEDOT:PSS with Ti₃C₂T_x could cause a significant effect on the electronic properties of the HTL, as experimentally demonstrated by an increase in the electrical conductivity. Finally, the inverted PSCs employing 0.03 wt.% MXene-doped PEDOT:PSS showed an average power conversion efficiency (PCE) of 15.1%, up from 12.5% for a reference PSC employing a pristine PEDOT:PSS HTL. The champion device with a 0.03 wt.% MXene–PEDOT:PSS HTL achieved 15.5% PCE.     

Dual-Interface Engineering in Perovskite Solar Cells with 2D Carbides

Passivating the interfaces between the perovskite and charge transport layers is crucial for enhancing the power conversion efficiency (PCE) and stability in perovskite solar cells (PSCs). Here we report a dual-interface engineering approach to improving the performance of FA_0.85MA_0.15Pb(I_0.95Br_0.05)₃-based PSCs by incorporating Ti₃C₂Cl_x Nano-MXene and o-TB-GDY nanographdiyne (NanoGDY) into the electron transport layer (ETL)/perovskite and perovskite/ hole transport layer (HTL) interfaces, respectively. The dual-interface passivation simultaneously suppresses non-radiative recombination and promotes carrier extraction by forming the Pb−Cl chemical bond and strong coordination of π-electron conjugation with undercoordinated Pb defects. The resulting perovskite film has an ultralong carrier lifetime exceeding 10 μs and an enlarged crystal size exceeding 2.5 μm. A maximum PCE of 24.86 % is realized, with an open-circuit voltage of 1.20 V. Unencapsulated cells retain 92 % of their initial efficiency after 1464 hours in ambient air and 80 % after 1002 hours of thermal stability test at 85 °C.     

LixNi0.5Co0.5O2的态密度计算及电化学性能研究

>为获得综合性能更好的锂离子二次电池正极材料, 分析了Co掺杂对Li_xNiO₂电化学性能的影响. 采用密度泛函DFT理论对Li_xNiO₂和Li_xNi_0.5Co_0.5O₂的平均放电电压和态密度进行了计算. 同时, 用共沉淀法制备了Li_xNiO₂和Li_xNi_0.5Co_0.5O₂锂离子二次电池正极材料, 并对其进行了XRD结构分析和恒流充放电测试. 实验和计算结果表明: 随锂离子嵌入正极(电池放电), 电池的电压逐渐降低, 材料的态密度峰向低能量方向移动; 与Li_xNiO₂相比, Li_xNi_0.5Co_0.5O₂的电压平台相对较高(当0.25≤x≤0.5), 而且在Li^＋嵌/脱时, Li_xNi_0.5Co_0.5O₂的结构变化相对较小; Co离子的掺入, 减小了NiO₆八面体的畸变度, 使材料的电化学稳定性得以提高. 在钴掺杂镍酸锂体系中, NiO₆和CoO₆具有相互的稳定作用.     

High‐Purity Inorganic Perovskite Films for Solar Cells with 9.72 % Efficiency

All‐inorganic perovskite solar cells with high efficiency and improved stability are promising for commercialization. A multistep solution‐processing method was developed to fabricate high‐purity inorganic CsPbBr₃ perovskite films for use in efficient solar cells. By tuning the number of deposition cycles (n) of a CsBr solution, the phase conversion from CsPb₂Br₅ (n ≤3), to CsPbBr₃ (n=4), and Cs₄PbBr₆ (n≥5) was optimized to achieve vertical‐ and monolayer‐aligned grains. Upon interfacial modification with graphene quantum dots, the all‐inorganic perovskite solar cell (without a hole‐transporting layer) achieved a power conversion efficiency (PCE) as high as 9.72 % under standard solar illumination conditions. Under challenging conditions, such as 90 % relative humidity (RH) at 25 °C or 80 °C at zero humidity, the optimized device retained 87 % PCE over 130 days or 95 % over 40 days, compared to the initial efficiency.     

Water soluble amino grafted silicon nanoparticles and their use in polymer solar cells

Stable aqueous amino-grafted silicon nanoparticles(SiNPs-NH2) were prepared via one-pot solution method. By grafting amino groups on the particle surface, the dispersion of SiNPs in water became very stable and clear aqueous solutions could be obtained. By incorporating SiNPs-NH2 into the hole transport layer of poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid(PEDOT:PSS), the performance of polymer solar cells composed of poly[2-methoxy,5-(2'-ethylhexyloxy)-1,4-phenylene vinylene](MEH-PPV):[6,6]-phenyl-C61-butyric acid methyl ester(PCBM) as active layer can be improved. SiNPs-NH2 are dispersed uniformly in the PEDOT:PSS solution and help form morphologies with small-sized domains in the PEDOT:PSS film. SiNPs-NH2 serve as screens between conducting polymer PEDOT and ionomer PSS to improve the phase separation and charge transport of the hole transport layer. As a result, the sheet resistance of PEDOT:PSS thin films is decreased from(93 ± 5) × 105 to(13 ± 3) × 105 ?/□. The power conversion efficiency(PCE) of polymer solar cells was thus improved by 9.8% for devices fabricated with PEDOT:PSS containing 1 wt% of SiNPs-NH2, compared with the devices fabricated by original PEDOT:PSS.     

用CdSe/ZnS量子点提高体异质结有机太阳电池的效率

通过掺杂吸收光谱在可见光波段的量子点可提高聚合物对可见光的吸收,因此掺杂CdSe/ZnS核-壳结构量子点(CQDs)能提高聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯(P3HT:PCBM)体异质结太阳电池的能量转换效率.本文研究了CdSe/ZnS量子点在P3HT:PCBM中的不同掺杂比例及其表面配体对太阳电池光伏性能的影响,优化器件ITO(氧化铟锡)/PEDOT:PSS(聚(3,4-乙撑二氧噻吩:聚苯乙烯磺酸)/P3HT:PCBM:(CdSe/ZnS)/Al的能量转换效率达到了3.99%,与相同条件下没有掺杂量子点的参考器件ITO/PEDOT:PSS/P3HT:PCBM/Al相比,其能量转换效率提高了45.1%.     

Synthesis of Cu-Modified Nickel Oxide Nanocrystals and Their Applications as Hole-Injection layers for Quantum-Dot Light-Emitting Diodes

Solution-processed NiO_x thin films have been applied as hole-injection layers (HILs) in quantum-dot light-emitting diodes (QLEDs). The commonly used NiO_x HILs are prepared by the precursor-based route, which requires high annealing temperatures of over 275 °C to in situ convert the precursors into oxide films. Such high processing temperatures of NiO_x HILs hinder their applications in flexible devices. Herein, we report a low-temperature approach based on Cu-modified NiO_x (NiO_x-Cu) nanocrystals to prepare HILs. A simple post-synthetic surface-modification step, which anchors the copper agents onto the surfaces of oxide nanocrystals, is developed to improve the electrical conductivity of the low-temperature-processed (135 °C) oxide-nanocrystal thin films. In consequence, QLEDs based on the NiO_x-Cu HILs exhibit an external quantum efficiency of 17.5 % and a T₉₅ operational lifetime of ∼2,800 h at an initial brightness of 1,000 cd m⁻², meeting the commercialization requirements for display applications. The results shed light on the potential of using NiO_x-Cu HILs for realizing high-performance flexible QLEDs.     

Enhanced efficiency of ternary organic solar cells by doping a polymer material in P3HT:PC61BM

Doping a low‐bandgap polymer material (PDTBDT‐DTNT) as a complementary electron donor in poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C₆₁‐butyricacid methyl ester (PC₆₁BM) blend is experimented to improve the power conversion efficiency (PCE) of organic solar cells (OSCs). The PCE of OSCs was increased from 3.19% to 3.75% by doping 10 wt% PDTBDT‐DTNT, which was 17.55% higher than that of the OSCs based on binary blend of P3HT:PC₆₁BM (host cells). The short‐circuit current density (J_sc) was increased to 10.11 mA·cm⁻² compared with the host cells. Although the PCE improvement could partly be attributed to more photon harvest for complementary absorption of 2 donors by doping appropriate PDTBDT‐DTNT, the promotion of charge separation and transport as well as the suppression of charge recombination due to a matrix of cascade energy levels is also important. And the better morphology of the active layer films is beneficial to the optimized performance of ternary devices.     

Novel ytterbium-doped CsPbI2Br thin-films–based inorganic perovskite solar cells toward improved phase stability

In this study, we used ytterbium (Yb²⁺) as a dopant in the CsPbI₂Br inorganic perovskite thin film and stabilized its black phase. Here, we varied the Yb²⁺ doping concentration in the CsPb_1?xYb_xI₂Br (x = 0–0.04) perovskite phase through simple solution method. The optimum concentration of Yb²⁺ showed improved morphology and crystal growth. The fabricated all-inorganic perovskite solar cells (IPVSCs) having CsPb_0.97Yb_0.03I₂Br-based champion device showed the highest 15.41% power conversion efficiency (PCE) for a small area of 0.09 cm² and 14.04% PCE for a large area of 1 × 1 cm² with excellent reproducibility, which is higher than the controlled CsPbI₂Br device. Detailed photovoltaic analysis revealed that the PCE, open-circuit voltage (V_OC), short circuit current density (J_SC) and fill factor (FF) of the final IPVSC device attributed to the suppressed charge recombination, better film quality, and well growth orientation of the perovskite film. Moreover, the champion CsPb_0.97Yb_0.03I₂Br device retains >85% initial efficiency after 280 h under 85 °C thermal annealings. Our results provide a new method to boost the performance of the photovoltaic application.     

Efficient P3HT:PC61BM solar cells employing 1,2,4-trichlorobenzene as the processing additives

The efficiency of the poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl C_(61)-butyric acid methyl ester(PC_(61)BM) based organic solar cells was enhanced by using 1,2,4-trichlorobenzene(TCB) as a processing additive to control the blend morphology. The addition of TCB improved the arrangement of P3HT which resulted in good phase separated blend films. Correspondingly, the optimized solar cells showed a power conversion efficiency(PCE) of 4.17% with a fill factor(FF) of 0.69, which were higher than those of common thermal annealing devices(PCE 3.84%, FF 0.67). The efficiency was further improved to 4.74% by thermal annealing at 150 °C for 10 min with a higher FF of 0.74.