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1.
The possible defect models of Y^3+:PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3+ ions are studied by using the general utility lattice program (GULP). The calculated results indicate that in the lightly doped Y^3+ :PWO crystal, the main compensating mechanism is [2Ypb^+ + VPb^2-], and in the heavily doped Y^3+ :PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^+, forming defect clusters of [2Ypb^+ +Oi^2-] in the crystal. The electronic structures of Y3+ :PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.  相似文献   

2.
The electronic structures, dielectric functions, complex refractive indices and absorption spectra for a perfect PbW04 (PWO) crystal and the PWO crystals containing lead vacancy V^2-pb have been calculated using a full-potential (linearized) augmented plane-wave (LAPW) local orbitals (LO) method with the lattice structureoptimized. The peaks of the absorption spectra corresponding to the electronic transitions have been studied.  相似文献   

3.
The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-:PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.  相似文献   

4.
The electronic structures and optical properties of both the perfect CsI crystal and the crystal containing a pair of VCs^1- -V1^1+ are calculated using CASTEP code with the lattice structure optimized. The calculated results indicate that the optical symmetry of the CsI crystal coincides with the lattice structure geometry Vcs^1- - V1^1+ of the CsI crystal. The absorption spectrum of the CsI crystal containing a pair of Vcs^1- - V1^1+ also does not occur in the visible and near-ultraviolet range. It reveals that the existence of the pair of Vcs^1- - V1^1+ in CsI crystal has no visible effects on the optical properties of the CsI crystal.  相似文献   

5.
Electronic structures of PbMoO4 crystals containing F-type colour centres with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational (DV-Xa) method. The calculated results show that F and F+ centres have donor energy levels in the forbidden band. The optical transition energies are 2.166eV and 2.197eV, respectively, corresponding to the 580nm absorption bands in PbMoO4 crystal. The 580nm absorption band in PbMoO4 is originated from the F-type colour centres.  相似文献   

6.
Electronic structures of PbWO4 crystals containing F-type colour centres with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational (DV-Xα) method. The calculated results show that F and F^+ centres have donor energy levels in the forbidden bands. Their optical transition energies are 1.84 eV and 2.21 eV, respectively, which correspond to the 680nm and 550 nm absorption bands. It is predicted that the 680 nm and 550nm absorption banas originate from the F and F^+ centres in PbWO4 crystals.  相似文献   

7.
Transparent and colorless lead fluoride crystals with sizes of 20 × 20 × 20 (ram3) are irradiated with several doses of γ-rays from a ^60Co source. Their transmittance spectra before and after irradiation are measured, and a new parameter ΔT = Tb - Ta is defined to evaluate the irradiation damage. Three optical absorption bands peaking at 27Onto, 37Onto and 50Onto are found in the plots of AT versus wavelength, and their intensities increase with the irradiation dose. These optical absorption bands, except the one at 27Onto, can recover spontaneously with time. Thermal annealing treatment can enhance this recovery of the transmittance, while the optimum annealing temperature for different samples depends on the irradiation dose.  相似文献   

8.
Traditional ligand-field theory has to be improved by taking into account both pure electronic contribution and electron-phonon interaction one (including lattice-vibrational relaxation energy). By means of improved ligand-field theory, the R line, t^322T1 and t^322T2 lines, t^22(^3T1)e^4T2, t^22(^3T1)e^4T1 and t2e^2(^4A2)4T1 bands, g factors of t^32 ^4A2 and t32E, four strain-induced level-splittings and R-line thermal shift of MgO:V^2+ have been calculated. The results are in very good agreement with the experimental data. It is found that for MgO:V^2+, the contributions due to electronphonon interaction (EPI) come from the first-order term; the contributions from the second-order and higher terms are insignificant. In thermal shift of R line of MgO:V^2+, the temperature-dependent contribution due to EPI is dominant. The results obtained in this work may be used in theoretical calculations of other effects of EPI.  相似文献   

9.
By means of an improved ligand-field theory, the "pure electronic" PS and the PS due to EPI of R line of MgO: V^2+ have been calculated, respectively. The calculated results are in very good agreement with the experimental data. The behaviors of the pure electronic PS of R line of MgO:V^2+ and the PS of its R line due to EPI are different. It is the combined effect of them that gives rise to the total PS of R line, which has satisfactorily explained the experimental results. The mixing-degree of |t2^2(^3T1)e^4T2〉 and |t2^3 ^2E〉 in the wavefunetion of R level and its variation with pressure have been calculated and analyzed. The comparison between the feature of R-line PS of MgO:V^2+ and that of MgO:Cr^3+ has been made.  相似文献   

10.
We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd^3+:Y3A15 O12 (Nd: YAG) and Yb^3+ : Y3A15 O12 (Yb: YAG) crystals grown by the Czochralski method. Two additional absorption (AA) bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is contributed due to Fe^3+ impurity, the latter is due to Fe^2+ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd:YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb:YAG crystal. These results indicate that Yb: YA G crystal possesses the advantage over Nd: YA G crystal that has better reliability for applications in harsh radiant environment.  相似文献   

11.
The electronic structures and absorption spectra for both the perfect PbWO4 (PWO) crystal and the three types of PWO crystals, containing VPb2−, VO2+ and a pair of VPb2−-VO2+, respectively, have been calculated using CASTEP codes with the lattice structure optimized. The calculated absorption spectra indicate that the perfect PWO crystal does not occur absorption band in the visible and near-ultraviolet region. The absorption spectra of the PWO crystal containing VPb2− exhibit seven peaks located at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), respectively. The absorption spectra of the PWO crystal containing VO2+ occur two peaks located at 370 nm and 420 nm. The PWO crystal containing a pair of VPb2−-VO2+ does not occur absorption band in the visible and near-ultraviolet region. This leads to the conclusions that the 370 and 420 nm absorption bands are related to the existence of both VPb2− and VO2+ in the PWO crystal and the other absorption bands are related to the existence of the VPb2− in the PWO crystal. The existence of the pair of VPb2−-VO2+ has no visible effects on the optical properties. The calculated polarized optical properties are well consistent with the experimental results.  相似文献   

12.
The electronic structures and absorption spectra for the perfect PbWO4 (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.  相似文献   

13.
刘廷禹  张启仁  庄松林 《中国物理》2005,14(6):1142-1146
本文利用完全势缀加平面波局域密度泛函近似,计算了含氧空位的PbWO4(PWO)晶体的电子结构,模拟计算了复数折射率及光学参数的偏振特性。比较含氧空位的PWO晶体与完整的PWO晶体的吸收光谱及其偏振特性,得到与氧空位相关的光学偏振特性。结果表明:完整的PWO晶体在可见和近紫外区域内无吸收,而含氧空位的PWO晶体在可见和近紫外区域出现吸收,该吸收谱有2个峰值分别位于370nm和420nm吸收带,它们的峰值位置与实验测得的350nm和420nm吸收带十分接近,由此可见PWO晶体中350nm和420nm吸收带与氧空位的存在有关。  相似文献   

14.
含铅空位的PbWO4晶体光学性质及其偏振特性的研究   总被引:1,自引:0,他引:1       下载免费PDF全文
刘廷禹  张启仁  庄松林 《物理学报》2005,54(8):3780-3786
利用完全势缀加平面波局域密度泛函近似,计算了含铅空位的PbWO4(PWO)晶 体的电 子结构,模拟计算了复数折射率、介电函数及吸收光谱的偏振特性. 比较含铅空位的PWO晶 体与完整的PWO晶体的吸收光谱及其偏振特性,得到与铅空位相关的吸收光谱及其偏振特性 ,计算结果与实验结果基本相符. 计算得到的含铅空位的PWO晶体的光学偏振特性反映了PWO 晶体的结构对称性. 计算结果表明PWO晶体中350,420,550和680 nm的吸收带的出现与PWO 晶体中铅空位的存在直接相关. 关键词: 4晶体')" href="#">PbWO4晶体 电子结构 光学性质 铅空位  相似文献   

15.
含铅空位PbWO4晶体光学性质的模拟计算   总被引:1,自引:1,他引:0  
为了研究钨酸铅晶体中铅空位对光学性质的影响,利用完全势缀加平面波局域密度泛函近似,按照能量最低原理采用共轭梯度方法,对含铅空位的PbWO4(PWO)晶体进行结构优化处理。计算了含铅空位的PWO晶体的电子结构、复数折射率、介电函数及吸收光谱,并与完整的PWO晶体进行了比较。结果表明:完整的PWO晶体在可见和近紫外区域内无吸收,而含铅空位的PWO晶体在可见和近紫外区域出现2个明显的吸收峰,这2个吸收峰可分解成4个高斯线型的吸收带,它们的峰值分别为350nm、405nm、550nm和670nm。可以得出这样的推论:PWO晶体中350nm、420nm、550nm和670nm吸收带的出现都与铅空位的存在有关。  相似文献   

16.
晶体PZCST:VO2+的EPR谱及光吸收谱的理论研究   总被引:1,自引:1,他引:0  
采用双旋-轨耦合参量模型和3d1电子组态在四角对称下的能级公式,计算了KZnClSO4·3H2O(PZCST): VO2+的EPR谱和光吸收谱,所得EPR谱和光吸收谱的理论结果与实验发现符合得很好. 研究发现,该晶体沿C4轴局域对称结构呈压缩的四角畸变,其大小为0.47 nm;大的κ值表明VO2+的未配对电子的自旋极化对超精细结构常数有着较大的贡献.  相似文献   

17.
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3+ and Pr^3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3+ ions occupied Bi^3+ sites, and there could be an energy transfer from Bi^3+ ions to RE^3+ ions.  相似文献   

18.
氟离子掺杂钨酸铅闪烁晶体的发光特性   总被引:1,自引:0,他引:1       下载免费PDF全文
钨酸铅(PWO)晶体是一种综合性能非常优异的无机闪烁晶体,并且在高能物理研究领域已获得重要应用,但光输出偏低的缺点严重制约了它在非高能物理领域的应用.本文采用氟化铅作为掺杂剂,用Bridgman方法生长出了光输出比普通PWO晶体高出2—3倍的新型PWO晶体.紫外和X射线荧光光谱的测试结果表明,这种新型晶体的发光波长比纯PWO晶体红移了大约134 nm,即为553 nm,衰减时间也从几十纳秒延长到100 ns以上,且光输出随积分时间的增加而增强.此外,发射波长和光输出沿晶体生长方向存在明显的位置依赖性,初期  相似文献   

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