Electric Conductivity of Phosphorus Nanowires

We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I - V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures.     

Transition Metal Silicide Nanowires Growth and Electrical Characterization

We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires （TM-NW） growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM （c-AFM）, the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω＆#12539;cm.     

Discrete-charge quantum circuits and electrical resistance

From the theory of quantum LC circuits with discrete charge, and semiclassical considerations, we obtain approximate energy eigenvalues, depending on the parameter . Next, we include electrical resistance for the quantum RLC circuit, obtaining a relation that strongly reminds us of the Landauer formula.     

Quantum RLC circuits: Charge discreteness and resonance

In a recent article [C.A. Utreras-Díaz, Phys. Lett. A 372 (2008) 5059], we have advanced a semiclassical theory of quantum circuits with discrete charge and electrical resistance. In this work, we present a few elementary applications of this theory. For the zero resistance inductive circuit, we obtain the Stark ladder energies in yet another way; for the circuit driven by a combination d.c. plus a.c. electromotive force (emf) we generalize earlier results by Chandía et al. [K. Chandía, J.C. Flores, E. Lazo, Phys. Lett. A 359 (2006) 693]. As a second application, we investigate the effect of electrical resistance and charge discreteness, in the resonance conditions of a series RLC quantum circuit.     

Effects of electronic state modulation on the high-frequency response characteristics of GaAs quantum wells

The effect of electronic-state modulation on the high frequency response of GaAs quantum well with thin inserted barrier layer is studied. The carrier scattering by polar optic phonons, acoustic deformation potential and background ionized impurities are incorporated in the present calculations considering the carrier distribution to be heated drifted Fermi-Dirac distribution. Modified phonon spectra and modulated electron wave function give different values of form factor compared to bulk mode phonon. Mobility is found to be enhanced on insertion of thin layer inside the quantum well. The ac mobility and the phase lag increases with the increase in both the channel width and the 2D carrier concentration. Cutoff frequency, where ac mobility drops down to 0.707 of its low frequency value, is observed to be enhanced reflecting better high frequency response.     

Transport Properties of Binary Clusters

We present first-principles studies on the transport properties of small sificon and aluminium clusters： Al2, Si2, Al4 and AlSi sandwiched between two Al （100） electrodes. The variation of the equilibrium conductance as a function of contact distance for these two-probe systems is probed. Our results show that the transport properties are dependent on both the specific nanostructure and the separation distance between the central molecule and the electrodes. For equilibrium transport properties, the clusters with the similar structure show similar transmission spectra at large distances, the small difference can be explained by the electron filling. For current-voltage characteristics, all the clusters show the metallic behaviour at lower bias, however very different non-linear behaviour can be observed at higher bias. For AlSi and Al2, when the distance between the central cluster and the electrodes is 3.5 A, large negative differential resistance （NDR） can be found in the bias range 0.8V～1.4V.     

The dependence of electronic transport on compressive deformation of C60 molecule

The dependence of electronic transport on compressive deformation of C₆₀ molecule is studied theoretically in this work. Brenner's “second generation” empirical potential is used to describe the many-body short-range interatomic interactions for C₆₀ in the molecular dynamics simulations. Our results demonstrate that C₆₀ can be compressed up to a strain ε=0.31 before collapsing. Electronic transport under an applied bias is calculated by using a self-consistent field approach coupled with non-equilibrium Green's function (NEGF) formalism. The transmission probability, conductance gap, and conductance spectrum are found to be sensitive to the compression. The peak value of conductance decreases with the increase of strain until the C₆₀ is compressed up to a strain ε=0.31.     

Antiresonance Effect in Electronic Tunnelling through a One-Dimensional Quantum Dot Chain

Electronic tunnelling through a one-dimensional quantum dot chain is theoretically studied, when two leads couple to the individual component quantum dots of the chain arbitrarily. If there are some dangling quantum dots in the chain outside the leads, the electron tunnelling through the quantum dot chain is wholly forbidden while the energy of the incident electron is just equal to the molecular energy levels of the dangling quantum dots, which is known as the antiresonance effect. In addition, the influence of electron interaction on the antiresonance effect is discussed within the Hartree-Fock approximation.     

Electrical transport characteristic of carbon nanotube after mass-separated ultra-low-energy oxygen ion beams irradiation

Mass-separated ultra-low-energy oxygen ion beams were irradiated to the single-walled carbon nanotubes (SWCNTs) under an ultra-high-vacuum pressure of 10⁻⁷ Pa for the purpose of achieving n-type conduction of nanotubes. The ion beam energy was 25 eV, which was close to the displacement energy of graphite. The incident angle of the ion beam was normal to the target nanotube. The ion dose ranged from 3.3 × 10¹¹ to 3.8 × 10¹² ions/cm². The structure of SWCNTs after the ion irradiation was investigated. The CNTs still have a clear single-walled structure after the ion irradiation. The graphite structure is distorted and some defects are induced in the nanotube by the oxygen irradiation. The oxygen ions with the ion energy of 25 eV are irradiated to the field effect transistor (FET) device with the nanotube channel. The n-type characteristic appears upon the oxygen ion irradiation, and the device exhibits ambipolar behavior. The defects induced by the ion irradiation may act as the n-type dopants.     

On the electronic band structure of zigzag-type single-walled carbon nanotubes

The electronic band structure of a zigzag-type carbon nanotube has been computed by using the tight-binding approximation method in the framework of SSH Model Hamiltonian modified by the inclusion of two Lagrange multipliers instead of one. This modification yielded an electronic band structure consistent with the experimental reports that an infinite (3,0) zigzag-type single-walled carbon nanotubes displays a metallic behaviour.     

Theoretical study of the performance for short channel carbon nanotube transistors with asymmetric contacts

We have simulated short channel carbon nanotube field-effect transistors with asymmetric source and drain contacts using a coupled mode space approach within the non-equilibrium Green's function framework. The simulated results show that the asymmetric conduction properties under positive and negative drain-to-source voltages are caused by the asymmetric Schottky barriers to carriers at the source and drain contacts. Under negative drain-to-source voltages, hole and electron conduction are dominated by thermionic emission and tunneling through the Schottky barrier, respectively, leading to the different subthreshold behaviors of the hole and electron conduction. With increasing channel length, short channel effects can be suppressed effectively and ON/OFF ratio can be improved.     

Amine-functionalized boron nitride nanotubes

The surface of boron nitride nanotubes (BNNTs) has been functionalized with amine groups via ammonia plasma irradiation. The functionalized tubes were characterized by Fourier transform infrared spectroscopy and electron energy loss spectroscopy. Amine-functionalized BNNTs were found to be highly dispersible in chloroform, and are predicted to form the basis of a new class of chemically reactive nanostructures.     

Structures of water molecular nanotube induced by axial tensile strains

Five well-ordered nano-ice structures embedded in carbon nanotubes are obtained in this study. These five nano-ice phases all exhibit single walled tubular morphologies, including the pentagon, hexagon ice nanotubes whose structures are quite different from bulk ice. Our simulation results indicate that water molecules tend to rearrange into surface ring structures to reduce the number of free OH groups. The structural behavior of these ice nanotubes inside CNTs subject to axial stress is also investigated. The ice nanotubes tend to be drawn to ice nanorings or ice nanospring during the mechanical stretching. The distribution function exhibits typical order-to-disorder transition of the water network confined in carbon nanotube during the stretching. By analysis, we suggest that it is unlikely that additional water molecules will enter the tubes because of the increased volume available if the tubes are stretched at contact with a water reservoir.     

Defect-Related Photoresponse and Polarization-Sensitive Photodetection of Single ZnO Nanowires

Defect-related photoconductivity of single ZnO nanowires is investigated. The photoconductivity shows powerlaw dependence with incident green laser intensity due to the defect mechanisms including both recombination centres and traps. The device based on single ZnO nanowire shows a sensitive photoresponse to green light with significant on/off ratios. In addition, the photocurrent ＆ highly sensitive to the polarization of the incident illumination. Therefore, the nanowire may act as a polarized photodetector.     

On the possibility of designing interacting semiconductor quantum wells with zero perturbation coupling

The paper describes the possibility of designing matched interacting semiconductor quantum wells. It is shown that for a given eigenstate of a quantum well (QW), it is always possible to find another QW in such a way that the coupling leaves the original eigenstate of the host QW unperturbed irrespective of the strength of interaction. For rectangular QWs, the condition is met with whenever the second QW has appropriate width and depth so that phase travelled by an electron wave through it is an integral multiple of π.     

Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

Resonant Tunnelling in Barrier-in-Well and Well-in-Well Structures

A Schrödinger equation is solved numerically for a barrier in a quantum well and a quantum well in another well structure by the transfer matrix technique. Effect of structure parameters on the transmission probabilities is investigated in detail. The results suggest that symmetry plays an important role in the coupling effect between the quantum wells. The relationship between the width of the inner well and the resonant energy levels in well-in-well structures is also studied. It is found that the ground state energy and the second resonant energy decrease with increasing width of the inner well, while the first resonant energy remains constant.     

Time-Dependent Transport in Nanoscale Devices

A method for simulating ballistic time-dependent device transport, which solves the time-dependent Sehrǒdinger equation using the finite difference time domain （FDTD） method together with Poisson＇s equation, is described in detail. The effective mass Schrǒdinger equation is solved. The continuous energy spectrum of the system is discretized using adaptive mesh, resulting in energy levels that sample the density-of-states. By calculating time evolution of wavefunctions at sampled energies, time-dependent transport characteristics such as current and charge density distributions are obtained. Simulation results in a nanowire and a coaxially gated carbon nanotube field-effect transistor （CNTFET） are presented. Transient effects, e.g., finite rising time, are investigated in these devices.     

Nanowire growth on Si wafers by oxygen implantation and annealing

We report on nanowire formation on oxygen implanted Si wafers. In this method, a Si wafer is first oxygen-implanted and then annealed at high temperatures in Ar ambient to promote growth of nanowires with high aspect ratio. Their lengths range from several micrometers to thousands of micrometers and their diameters range from tens of nanometers to a few microns.