Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Preparation of ferromagnetic γ - Fe2O3 nanocrystallites by oxidative co-decomposition of PEG 6000 and ferrocene

Highly crystalline and ferromagnetic γ-Fe₂O₃ nanocrystallites were prepared by controlled oxidative co-decomposition of PEG 6000 and ferrocene at a temperature of 450 ^°C under air atmosphere. The morphology, crystalline structure and preliminary magnetic properties of the as-synthesized nanocrystallites have been characterized by using transmission electron microscope (TEM), X-ray powder diffraction (XRD) and vibrating sample magnetometer (VSM). The highly crystalline γ-Fe₂O₃ nanocrystallites are in quasi-cubic shape with an average size of 30 nm and exhibit room-temperature ferromagnetism. The capping effect of PEG 6000 has also been investigated by thermogravimetry analysis (TGA) and Fourier transform infrared (FTIR) regarding controlling the size of the nanocrystallites and preventing the volatilization of ferrocene and thus raising the yield of the products. This simple method has a high yield of over 80% as well as low cost.     

Photoluminescence of Electrospun Poly-Methyl-Methacrylate:Alq3 Composite Fibres

Tris（8-hydroxyquinoline） aluminium doped poly-methyl-methacrylate （PMMA：Alq3） composite nanofibres are fabricated by electrospinning. The morphology of fibres is characterized by scanning electron microscopy. The photoluminescence of a series of the nanofibres with various contents of Alq3 to PMMA is investigated. UVvisible absorption and the PL spectra analysis are employed to analyse the interaction between the polymer and the luminescent molecule.     

Optimization of (002)-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property

By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn²⁺ concentration is the most important factor to grow a highly (002)-oriented ZnO film. We take an appropriate Zn²⁺ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn²⁺ concentrations precursor solution. The Zn²⁺ concentration either larger or smaller than 0.35mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure

Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W₁₈O₄₉ pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.     

VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4

Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.     

Space-Selective Precipitation of Ba2TiSi2O8 Crystals in Sm3^＋-Doped BaO-TiO2-SiO2 Glass by Femtosecond Laser Irradiation

The ferroelectric crystal Ba2TiSi2O8 with high second-order optical nonlinearity is precipitated in Sm^3＋-doped BaO-TiO2-SiO2 glass by a focused 800hm, 250 kHz and 150fs femtosecond laser irradiation. No apparent blue and red emissions are observed at the beginning, while strong blue emission due to second harmonic generation and red emission due to the f-f transitions of Sm^3＋ are observed near the focal point of the laser beam after irradiation for 25s. Micro-Raman spectra confirm that Ba2 TiSi2O8 crystalline dots and lines are formed after laser irradiation. The mechanism of the phenomenon is discussed.     

Superhydrophobicity of LaMnO3 Coatings with Hierarchical Microstructures

As proposed by Herminghaus, a hierarchical structure could render any surface nonwettable as long as the roughness amplitude at small scales is sufficient to suspend a free liquid surface. Recently we reported that the wettability of La0.7Sr0.3MnO3, an intrinsic hydrophilic oxide, can be tuned from superhydrophilicity to superhydrophobicity by hierarchical microstructures generated by annealing the coatings of La0.7Sr0.3MnO3 powder in nanometric scale at different temperatures. Here we further demonstrate the similar phenomenon observed on LaMaO3 coatings, which conforms THAT the surface geometrical structure is a key factor to determine the wettability.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Concentration and Temperature Dependences of YBO3：Bi^3＋ Luminescence under Vacuum Ultraviolet Excitation

Bi^3＋ doped YB03 phosphors are prepared by solid state reaction and their luminescent properties are investi- gated by using synchrotron radiation instrument, Concentration and temperature dependences of YBO3：Bi3＋ luminescence under VUV/UV excitation is observed, The emission and excitation spectra are assigned, and the mechanism for these phenomena is explored, which result from the energy transfer between Bi^3＋ ions occupying different sites in YB03 crystal lattice.     

Luminescence and Energy Transfer of Eu^2＋, Mn^2＋ in SrZnP2O7

The SrZnP2OT：Eu^2＋, Mn^2＋ phosphor is synthesized by high temperature solid state reaction. The luminescence properties and the energy transfer between Eu^2＋ and Mn^2＋ are investigated. The emission bands of this phosphor peaked at 42Ohm and 67Ohm are originated from the 5d → 4f transition of Eu^2＋ and from the 4T1 （4G） --〉 6A1 （6S） transit/on of Mn^2＋, respectively. With the increasing Mn^2＋ concentration, the intensity of fixed concentra- tion Eu^2＋ decreases and the intensity of Mn^2＋ also increases. It is suggested that there is an energy transfer from Eu^2＋ to Mn^2＋ in SrZnP2O7 host. According to Dexter＇s energy transfer formula of multipolar interaction, the energy transfer between Eu^2＋ and Mn^2＋ is due to the electric dipole-quadrupole interaction of the resonance transfer.     

Optical properties of nanocrystalline-coated Y2O3:Er, Yb obtained by mechano-chemical and combustion synthesis

Y₂O₃:Er³⁺, Yb³⁺ nanocrystals have been obtained by ball milling and using a combustion synthesis procedure. In both cases the nanocrystals have been successfully coated with SiO₂ following the Stöber method. The average size of the as-synthesized nanoparticles has been estimated from X-ray diffraction patterns and transmission electron microscopy images. The dependence of the optical properties of these samples on synthesis procedure or dopant concentration has been investigated. Emission, excitation and lifetime measurements have been carried out. Upconversion luminescence has been detected in all samples and an enhancement of the red to green emission ratio has been observed in all samples after infrared compared to visible excitation. The mechanisms responsible for the upconversion phenomena have been discussed.     

Luminescent Characteristics of LiSrBO3：Eu3＋ Phosphor for White Light Emitting Diode

LiSrBO3 ：Eu3＋ phosphor is synthesized by a high solid-state reaction method, and its luminescent characteristics are investigated. The emission and excitation spectra of LiSrBO3：Eu3＋ phosphors exhibit that the phosphors can be effectively excited by near ultraviolet （401 nm） and blue （471 nm） light, and emit 615nm red light. The effect of Eua＋ concentration on the emission spectrum of LiSrBO3：Eu3＋ phosphor is studied; the results show that the emission intensity increases with increasing Eu3＋ concentration, and then decreases because of concentration quenching. It reaches the maximum at 3mol%, and the concentration self-quenching mechanism is the dipoledipole interaction according to the Dexter theory. Under the conditions of charge compensation Li＋, Na＋ or K＋ incorporated in LiSrBO3, the luminescent intensities of LiSrBO3 ：Eua＋ phosphor are enhanced.     

Excitation power controlled luminescence switching in Yb-Tm co-doped hexagonal NaYF4 nanorods

Intense infrared-to-visible up-conversion (UC) emissions were obtained in hexagonal Yb³⁺-Tm³⁺ co-doped NaYF₄ nanorods under excitation at 980 nm. Especially, luminescent switching between different UC emission wavelengths at 800, 480 and 450 nm were observed by adjusting excitation powers. Based on power-dependent spectral analyses, it was found that the cooperative energy transfer between Yb³⁺-Yb³⁺ pairs and Tm³⁺ ions play a key role on the luminescent switching besides the saturation effect of Yb³⁺²F_5/2 and Tm³⁺¹G₄ excited states. Our results indicate that hexagonal NaYF₄ nanostructures have potential applications in miniaturized solid-state laser, optical processing sensors and fluorescent biolabels.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Microwave Response of MgB2/A12O3 Superconducting Thin Films by Microstrip Resonator Technique

Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK （λe0 = 463nm） and surface resistance （R8 = 1.52 mΩ at 11 K and 8. 73 GHz） by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.     

Electroluminescence of Si Nanocrystal-Doped SiO2

We perform a comparative st udy on the electroluminescence （EL） and photoluminescence （PL） of Si nanocrystaldoped SiO2 （nc-Si：SiO2） and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si：SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.[第一段]     

High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Effect of Al^3＋ on Photoluminescence Properties of Eu^3＋-Doped BaZr（BO3）2 Phosphors

We discuss the influence of Al^3＋ on the charge transfer state （CTS） and the photoluminescence properties of BaZr（BO3）2：Eu. The results reveal that there is a red shift which is about 20nm for the charge transfer state when doping with Al^3＋ and indicate the formation of ‘free＇ electrons due to the change of microstructures. In addition, the influence or Al^3＋ doping on the PPR is analysed and a new explanation is raised based on the photo luminescent mechanism. It is the CTS intensity rather than the CTS energy that influences the peak-peak ratio.