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Abstract Transformation kinetics from hBN to cBN has been studied at 6 GPa with changing reaction temperature and content of catalyst mixed with hBN powder. At lower catalyst content (3–10 wt %), rate of transformation was extraordinary rapid between 1300 and 1350 C. At higher catalyst content (30–50 wt %), rate of transformation was decreased. Normal nucleation kinetics was observed at about 1500 C. The rapid transformation temperature region correlates characteristic behavior of the sintering process. 相似文献
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V. M. Beresnev I. M. Torianyk O. V. Sobol’ A. D. Pogrebnyak A. Yu. Kropotov N. G. Stervoedov U. S. Nyemchenko D. A. Kolesnikov S. A. Klimenko P. V. Turbin 《Technical Physics》2014,59(8):1220-1223
AlN-TiB2 composite ceramic samples with a TiSi2 additive are obtained by magnetron sputtering. After deposition, ordered regions in the coatings measure 1 nm across, so that they can be categorized as amorphous-like. Annealing at 900 and 1300°C causes crystallization with grain sizes of 11 and 25 nm, respectively. However, crystallization does not dramatically deteriorate the mechanical properties owing to the formation of high-enthalpy phases (AlB2 at 900°C and AlB3 at 1300°C). The hardness of the coatings varies from 15.1 GPa in the as-prepared samples to 11.0 GPa after annealing to 1300°C. This makes it possible to improve the wear resistance of edge tools with these coatings by a factor of 1.32 at a temperature of 1300°C near the contact. 相似文献
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Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature
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We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development. 相似文献
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Analysis of Transition Mechanism of Cubic Boron Nitride Single Crystals under High Pressure-High Temperature with Valence Electron Structure Calculation
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The possibilities of hexagonal boron nitride(hBN) and lithium boron nitride(Li_3BN_2) transition into cubic boron nitride(cBN) under synthetic pressure 5.0 GPa and synthetic temperature 1700 K are analyzed with the use of the empirical electron theory of solids and molecules. The relative differences in electron density are calculated for dozens of bi-phase interfaces hBN/cBN, Li_3BN_2/cBN. These relative differences of hBN/cBN are in good agreement with the first order of approximation(10%), while those of Li_3BN_2/cBN are much greater than 10%.This analysis suggests that Li_3BN_2 is impossible to be intermediate phase but is a catalyst and cBN should be directly transformed by hBN. 相似文献
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利用球磨法制备石墨-六角氮化硼微晶混合物,并在6.1 GPa、800~1 500 ℃条件下与水进行高压反应,以便研究用水作触媒合成B-C-N三元化合物的可能性。通过对反应产物的XRD、XPS谱分析发现:高压下随着温度的升高,反应产物中出现再结晶石墨,其晶化程度逐渐提高;但没有出现再结晶六角氮化硼,也未出现立方氮化硼。在球磨不充分条件下,石墨-六角氮化硼混合物的XRD谱没有完全弥散,它们与水高压反应时,能观察到石墨与立方氮化硼分别结晶的现象,但都没有形成B-C-N晶化结构。 相似文献
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A. D. Pogrebnjak A. A. Dem’yanenko V. M. Beresnev O. V. Sobol’ O. M. Ivasishin K. Oyoshi Y. Takeda H. Amekura A. I. Kupchishin 《Physics of the Solid State》2016,58(7):1453-1457
The recrystallization of the structure of an X-ray amorphous AlN–TiB2–TiSi2 coating containing short-range order regions with characteristic sizes of 0.8–1.0 nm has been performed using a negative gold ion (Au–) beam and high-temperature annealing. Direct measurements using methods of high-resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectral (EDXS) microanalysis have demonstrated that thermal annealing at a temperature of 1300°C in air results in the formation of nanoscale (10–15 nm) phases AlN, AlB2, Al3O3, and TiO2, whereas the ion implantation of negative ions Au– leads to a fragmentation (decrease in the size) of nanograins to 2–5 nm with the formation of spheroidal gold nanocrystallites a few nanometers in size, as well as to the formation of an amorphous oxide film in the depth (near-surface layer) of the coating due to ballistic ion mixing and collision cascades. 相似文献
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研究了常压高温下Li3N在B4C与含氮化合物生成BN反应中的作用。实验结果表明,在950℃高温下,B4C与Si3N4反应不生成hBN,B4C与NH4Cl反应只生成少量hBN。在该两种原料中加入Li3N后,反应产物中hBN生成量都明显增多。但Li3N本身没有与B4C生成hBN的反应。由此推断,Li3N在上述B4C与含氮化合物生成hBN的反应中表现出了催化作用。此外,在以hBN为原料,以Li3N为催化剂合成出cBN的温度压力区域内,对B4C-Si3N4-Li3N体系所做的高温高压实验没有合成出hBN或cBN。还讨论了在低压条件下原位合成cBN的探索实验中,应如何选择硼源和氮源的问题。 相似文献
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Crystallographic relations between different forms of boron nitride (BN) appearing at the high pressure–high temperature structural phase transformation have been revealed by high-resolution transmission electron microscopy (HRTEM). As starting materials, crystalline hexagonal BN (hBN) with different degrees of crystallinity, or with defects intentionally introduced, were used. Cubic BN (cBN) is formed only as a minor component, the rest consisting of different forms of sp 2 bonded BN: hBN, compressed, monoclinic deformed hBN, or turbostratic BN (tBN). The small cBN crystallites (300–400?nm) contain many defects such as twins, stacking faults and nanoinclusions of other BN forms: tBN, rhombohedral BN (rBN) and wurtzite BN (wBN). The cBN phase grows epitaxially on the basal plane of hBN. The nucleation sites for cBN are revealed by HRTEM. They consist of nanoarches (sp 3 hybridized, highly curved nanostructures), frequently observed at the edges of the hBN crystallites in the starting materials. Based on HRTEM observations of specimens not fully transformed, a nucleation and growth model for cBN is proposed which is consistent with existing theoretical and experimental models. 相似文献
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The 50 vol% SrTiO3/yttria-stabilized zirconia (YSZ) composite ceramic was prepared through powder sintering route in 1400~1500 °C. Only the cubic YSZ and SrTiO3 phases are detected in all the sintered ceramics, and the typical XRD peak positions of both phases have varied dramatically. The grain sizes and relative densities of all specimens increase evidently with the sintering temperature. The width of the SrTiO3/YSZ interfacial region increases from 100.4 to 468.8 nm as the sintering temperature rises from 1400 to 1500 °C. The total electrical conductivities of the sample sintered at 1500 °C are remarkably higher than those at 1400 and 1450 °C, while the ion transference numbers drop from 0.837 to 0.731 with sintering temperature from 1400 to 1500 °C. The variations in the electrical properties above can be interpreted based on the effects of sintering temperature on the elemental diffusions during the sintering process. 相似文献
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High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites
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The high-temperature dielectric properties of SiO2/Si3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures. 相似文献
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Fateme Abdi 《哲学杂志》2016,96(13):1305-1317
Thick (3.0 mm) Al samples (7049 an alloy with 15 elements) were implanted by N+ ions of 30 keV energy and fluence of 5 × 10 17 N+ cm?2 at different temperatures. The surface modification of the samples was studied using X-ray diffraction (XRD) and atomic force microscope (AFM) analysis. XRD spectra of the samples clearly showed the formation of different phases of AlN. Crystallite sizes (coherently diffracting domains) obtained from AlN diffraction lines showed that at a certain substrate temperature the crystallite size decreases considerably. AFM images showed the formation of grains on Al samples, and it was observed that both grain size and sample surface roughness first decrease and then increase with temperature (i.e. a minimum at a certain temperature is observed). In addition at this temperature, a minimum of intensity is also observed for the intensity of different phases of AlN and the intensity ratio of AlN (200)/AlN (311). This phenomenon is similar to those obtained for thin films and pure metal foils though the sample studied in this work is an Al alloy and the minimum for Al occurred at a value three times larger than that reported for the above cases. Alloy nature of this sample with 14 elements is responsible for the observed results because they may act as defects. Results may also be affected by the residual gases, substrate temperature, dissociation of water in the chamber and the ion energy. Results also showed that the processes of Al nitride and Al oxide formations are competing with each other; decrease of aluminium nitride phases are associated with increase of aluminium oxide phases. 相似文献
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本文把非晶La80Al20在真空中、不同温度及其时间条件下进行退火,以及在6 GPa不同温度退火40 min,并对退火样品的相结构及超导性进行了研究。发现真空中,250 ℃退火的样品晶化成了T>4.2 K、不超导的单相四方La4Al;300 ℃及450 ℃退火的样品晶化成La3Al、α-La、β-La及一些未知杂相,这些多相混合物的TC<6.0 K。在6 GPa 300 ℃及以下温度退火的样品,晶化成单相六角La4Al,其晶格常数与六角La3Al的完全相同,这些样品的TC>5.1 K;6 GPa、350 ℃及以上温度退火的样品,晶化成La3Al相及新未知相H,新相H的TC约为6.3 K。 相似文献
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研究了常压高温下Li3N在B4 C与含氮化合物生成BN反应中的作用。实验结果表明 ,在 950℃高温下 ,B4 C与Si3N4 反应不生成hBN ,B4 C与NH4 Cl反应只生成少量hBN。在该两种原料中加入Li3N后 ,反应产物中hBN的生成量都明显增多。但Li3N本身没有与B4 C生成hBN的反应。由此推断 ,Li3N在上述B4 C与含氮化合物生成hBN的反应中表现出了催化作用。此外 ,在以hBN为原料 ,以Li3N为催化剂合成出cBN的温度压力区域内 ,对B4 C Si3N4 Li3N体系所做的高温高压实验没有合成出hBN或cBN。还讨论了在低压条件下原位合成cBN的探索实验中 ,应如何选择硼源和氮源的问题 相似文献
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WANG Hui ZHU Ji-Hong JIANG De-Sheng ZHU Jian-Jun ZHAO De-Gang LIU Zong-Shun ZHANG Shu-Ming YANG Hui 《中国物理快报》2009,26(10)
Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600-850°C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750°C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400nm. 相似文献