Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond(NCD) films produced by only adding 0.24% N2 into 4% CH4 /H2 plasma,as compared to the high quality transparent microcrystalline diamond(MCD) films,grown using the same growth parameters except for nitrogen.These experimental results clearly evidence that defect formation and impurity incorporation(for example,N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CH x(x=1,2,3) growth species for adsorption sites.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

A New Dopant of NaN3 for High-Concentration-Nitrogen Diamond Synthesized by HPHT

Nitrogen is successfully doped in diamond by adding sodium azide （NaN3 ） as the source of nitrogen to the graphite and iron powders. The diamond crystals with high nitrogen concentration, 1000-2200ppm, which contain the same concentrations of nitrogen with natural diamond, have been synthesized by using the system of iron-carbon- additive NAN3. The nitrogen concentrations in diamond increase with the increasing content of NAN3. When the content of NaN3 is increased to 0.7-1.3 wt. %, the nitrogen concentration in the diamond almost remains in a nitrogen concentration range from 1250ppm to 2200ppm, which is the highest value and several times higher than that in the diamond synthesized by a conventional method without additive NaN3 under high pressure and high temperature （HPHT） conditions.     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.     

Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films

An electroluminescence (EL) device is investigated by using boron and nitrogen double-doped diamond films.The characteristics of the EL spectrum and the dependence of EL intensity on boron and nitrogen impurity are investigated.The experiment indicated that the intensity of EL increases obviously and the threshold voltage decreases with increasing nitrogen impurity within our doped level.Meanwhile the highest emission line changes from the blue region (peaks at 470nm) to the yellow region (peaks at 584nm).     

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^- 1.     

Creating nitrogen-vacancy ensembles in diamond for coupling with flux qubit

Hybrid quantum system of negatively charged nitrogen–vacancy(NV~-) centers in diamond and superconducting qubits provide the possibility to extend the performances of both systems. In this work, we numerically simulate the coupling strength between NV~-ensembles and superconducting flux qubits and obtain a lower bound of 1016cm~(-3) for NV~-concentration to achieve a sufficiently strong coupling of 10 MHz when the gap between NV~-ensemble and flux qubit is 0. Moreover, we create NV~-ensembles in different types of diamonds by14~(N+)and12(C+)ion implantation, electron irradiation, and high temperature annealing. We obtain an NV~-concentration of 1.05 × 1016cm~(-3) in the diamond with1-ppm nitrogen impurity, which is expected to have a long coherence time for the low nitrogen impurity concentration. This shows a step toward performance improvement of flux qubit-NV~-hybrid system.     

Design and Application of a Near Field Microwave Antenna for the Spin Control of Nitrogen-Vacancy Centers

Controlled manipulation of the electron spin by means of a microwave field is investigated. The near magnetic field generated by a copper wire antenna is measured experimentally and simulated theoretically, and the optimum antenna length and position are obtained. By measuring the change in the fluorescence of nitrogen-vacancy （N-V） centers in diamond after excitation with a 532 nm continuous wave laser at room temperature, it is verified that the spin of the N-V center can be effectively controlled by the microwave field.     

Quantum information processing and metrology with color centers in diamonds

The Nitrogen Vacancy （NV） center is becoming a promising qubit for quantum information processing. The defect has a long coherence time at room temperature and it allows spin state initialized and read out by laser and manipulated by microwave pulses. It has been utilized as a ultra sensi- tive probe for magnetic fields and remote spins as well. Here, we review the recent progresses in experimental demonstrations based on NV centers. We first introduce our work on implementation of the Deutsch- Jozsa algorithm with a single electronic spin in diamond. Then the quantum nature of the bath around the center spin is revealed and continuous wave dynamical decoupling has been demonstrated. By applying dynamical decoupling, a multi-pass quantum metrology protocol is realized to enhance phase estimation. In the final, we demonstrated NV center can be regarded as a ultra-sensitive sensor spin to implement nuclear magnetic resonance （NMR） imaging at nanoscale.     

Evolution of Spin and Charge in a System with Interacting Impurity and Conducting Electrons ＊

We investigate the dynamics of spin and charge in an interacting system consisting of impurity and conduct-ing electrons. The time evolution of spin and charge in the impurity is given by solving the time-dependent Schroedinger equations for the many-body states of the interacting system. By switching on the interaction be-tween impurity and conducting electrons, the spin and charge of the impurity begin oscillations with frequencies that reflect the elementary excitations of the interacting system. The dynamics reflects the basic picture of the Kondo effect.     

Inversion of the electron spin resonance signal from a P1 center in a synthetic diamond crystal

We have studied the electron spin resonance (ESR) of a 0.59 carat synthetic diamond single crystal at room temperature. The crystal was grown on a “split-sphere” apparatus in the Fe-Ni-C system by the temperature gradient method. After high-temperature/high-pressure treatment of the diamond, it was observed that as the microwave power supplied to the sample increased from 70 μW to 70 mW in an H₁₀₂ cavity, the ESR signal from the P1 center (a nitrogen atom substituting for carbon at a lattice point of the diamond crystal: C-form nitrogen) is inverted. In the original diamond (before high-temperature/high-pressure treatment), no inversion of the ESR signal was observed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 9–12, January–February, 2006.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Structural and Magnetic Properties of Fe-Doped Anatase TiO2 Films Annealed in Vacuum

Structural and magnetic properties of Fe-doped anatase TiO2 films fabricated by sol-gel spin coating are investigated. X-ray diffraction measurements reveal that Fe^3＋ ions are incorporated into the TiO2 lattice. No ferromagnetism-related secondary phases and magnetic nanopaxticles are observed in the films. The presence of electron paramagnetic resonance signals at 9- 2.0 supports oxygen vacancies and/or defects generated in the films after annealing in vacuum. Magnetic measurements indicate that Fe-doped anatase TiO2 films are ferromagnetic at room temperature. These observations suggest that oxygen vacancies and/or defects axe energetically favorable for the long range Fe^3＋-Fe^3＋ ferromagnetic coupling in Fe-doped anatase TiO2 films.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

Vacancy Aggregation in Diamond Films grown in CH4＋H2 Atmosphere by MPCVD

Transmission electron microscopy is applied to study the diamond film grown in a CH₄ and H₂ gaseous mixture by microwave plasma assisted chemical vapour deposition. Defects in the nanometre scale, dislocation loops, arefirst observed in diamond films. The dislocation loops are found to be of co-existence with planar defects and are next to the planar defects for {111} faceting grains. A possible mechanism is suggested to interpret the co-existence of dislocation loops with planar defects.     

First-Principles Studies on Properties of Boron-Related Impurities in c-BN

We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.