Metallic adhesion in atomic-size junctions

We report high resolution simultaneous measurements of electrical conductance and force gradient between two sharp gold tips as their separation is varied from the tunneling distance to atomic-size contact. The use of atomically sharp tips minimizes van der Waals interaction, making it possible to identify the short-range metallic adhesion contribution to the total force.     

Electron transport properties of single molecular junctions under mechanical modulations

Electron transport behaviors of single molecular junctions are very sensitive to the atomic scale molecule-metal electrode contact interfaces, which have been difficult to control. We used a modified scanning probe microscope-break junction technique (SPM-BJT) to control the dynamics of the contacts and simultaneously monitor both the conductance and force. First, by fitting the measured data into a modified multiple tunneling barrier model, the static contact resistances, corresponding to the different contact conformations of single alkanedithiol and alkanediamine molecular junctions, were identified. Second, the changes of contact decay constant were measured under mechanical extensions of the molecular junctions, which helped to classify the different single molecular conductance sets into specific microscopic conformations of the molecule-electrode contacts. Third, by monitoring the changes of force and contact decay constant with the mechanical extensions, the changes of conductance were found to be caused by the changes of contact bond length and by the atomic reorganizations near the contact bond. This study provides a new insight into the understanding of the influences of contact conformations, especially the effect of changes of dynamic contact conformation on electron transport through single molecular junctions.     

金属电极对有机分子非弹性电子隧穿谱的影响

利用第一性原理计算金属电极下1,6-己二硫醇和1,4-二巯基苯分子结的非弹性电子隧穿谱,发现非弹性电子隧穿谱对金属电极的变化十分灵敏,并且非弹性电子隧穿谱的振动峰位置和强度与硫原子和金属电极表面的距离密切相关.结果表明电极材料和分子与金属成键的情况是影响分子结的非弹性电子输运的重要因素.理论分析进一步表明不同金属电极和有机分子的耦合能不同导致了谱峰强弱的调整.     

Towards a Fundamental Understanding of the Mechanics of Crystal Agglomeration: A Microscopic and Molecular Approach

A novel experimental apparatus has been developed which enables the measurement of adhesion forces between two crystals suspended in a supersaturated solution and allowed to agglomerate over a fixed time period. The geometry of the crystal surfaces at the contact points and the dynamic development of the bond are captured on video and characterised using an image analysis technique. The experimental apparatus has been designed to allow control of supersaturation, orientation of crystal faces, distance between crystals, relative movement of crystals and contact time. The experimental results show that the agglomerate bond strength, expressed as the agglomerate adhesion force per unit contact area, increases with increasing supersaturation and is higher for faster growing faces than for slower growing faces. In addition, a qualitative comparison has been made between the measured force and a theoretical estimation of the interaction force between crystal faces, determined through molecular modelling. It is shown that the speed of approach of two opposing crystal faces is a key parameter in the nature of the subsequent bond, as is their atomic structure.     

Structural deformation and intertube conductance of crossed carbon nanotube junctions

We present a first-principles study of the structure and quantum electronic conductance of junctions consisting of two crossed (5,5) single-walled carbon nanotubes. The structures are determined by constrained minimization of total energy at a given force between the two tubes, simulating the effects of substrate-tube attraction or an applied force. We find that the intertube contact distance is very sensitive to the applied force in the range of 0--10 nN. The intertube conductance is sizable for realistic deformation expected from substrate interaction. The results explain the recent transport data on crossed nanotubes and show that these systems may be potentially useful as electromechanical devices.     

Reversible bond formation in a gold-atom-organic-molecule complex as a molecular switch

We report on the formation of a metal-molecule complex that can be used as a molecular switch. Using a cryogenic scanning tunneling microscope, a covalent bond was formed reversibly between a gold atom and a perylene-3,4,9,10-tetracarboxylic dianhydride molecule supported by a thin insulating film. The bonded and the nonbonded state of the complex were found to be associated with different charge states, and the switching between the two states was accompanied by a considerable change in the tunneling current. Atomic force microscopy molecular imaging was employed to determine precisely the atomic structure of the complex, and the experimental results were corroborated by density functional theory calculations.     

Single atom adhesion in optimized gold nanojunctions

We study the interaction between single apex atoms in a metallic contact, using the break junction geometry. By carefully training our samples, we create stable junctions in which no further atomic reorganization takes place. This allows us to study the relation between the so-called jump out of contact (from contact to tunneling regime) and jump to contact (from tunneling to contact regime) in detail. Our data can be fully understood within a relatively simple elastic model, where the elasticity k of the electrodes is the only free parameter. We find 5相似文献   

Thermal conductivity of superconducting tunneling junctions

We present the first measurements of thermal conductivity of superconducting tunneling junctions. Point contact junctions were established between a GaAs (Zn) point and a superconducting Nb base. We also used a dielectric tip made of GaAs (Cr).We conclude that electrons carry the heat across these type of junctions, in the same way they do in a bulk superconductor, and that the acoustical mismatch at the interface is not affected by the superconducting transition of the base metal.     

Local spectroscopy and atomic imaging of tunneling current, forces, and dissipation on graphite

Theory predicts that the currents in scanning tunneling microscopy (STM) and the attractive forces measured in atomic force microscopy (AFM) are directly related. Atomic images obtained in an attractive AFM mode should therefore be redundant because they should be similar to STM. Here, we show that while the distance dependence of current and force is similar for graphite, constant-height AFM and STM images differ substantially depending on the distance and bias voltage. We perform spectroscopy of the tunneling current, the frequency shift, and the damping signal at high-symmetry lattice sites of the graphite (0001) surface. The dissipation signal is about twice as sensitive to distance as the frequency shift, explained by the Prandtl-Tomlinson model of atomic friction.     

耦合形貌对Si4团簇电子输运影响的第一性原理计算

运用密度泛函理论与非平衡格林函数相结合的方法,对Si₄团簇与Au （100）-3×3两电极以顶位-顶位、顶位-空位、空位-空位三种形貌相连构成的Au-Si₄-Au纳米结点的拉伸过程进行第一性原理模拟,计算不同构型纳米结点在不同距离的电导和结合能.讨论耦合形貌、距离对结点电导的影响,结合能的计算表明三种不同耦合形貌结点存在稳定平衡结构,其平衡电导分别为0.71 G₀、0.96 G₀和2.44 G₀,且在-1.2 V~1.2 V的电压范围内,三种不同耦合形貌结点稳定结构表现出类似金属的导电特性,其I-V关系都近似为直线.计算结果表明Si₄团簇与电极的耦合形貌、两极距离对纳米结点电子输运有重要影响.     

Single electron tunneling rates in multijunction circuits

The rate of electron tunneling through normal metal tunnel junctions is calculated for the case of ultrasmall junction capacitances. The so-called Coulomb blockade of electron tunneling at low temperatures is shown to be strongly affected by the external electrical circuit. Under the common experimental condition of a low impedance environment the Coulomb blockade is suppressed for single tunnel junctions. However, a Coulomb gap structure emerges for junctions embedded in a high impedance environment. For a double junction setup a Coulomb blockade of tunneling arises even for low impedance environments due to the charge quantization on the metallic island between the junctions. An approach using circuit analysis is presented which allows to reduce the calculation of tunneling rates in multijunction circuits to those of a single junction in series with an effective capacitance. The range of validity of the socalled local rule and global rule rates is clarified. It is found that the tunneling rate tends towards the global rule rate as the number of junctions is increased. Some specific results are given for a one-dimensional array of tunnel junctions.     

Polyelectrolyte multilayer formation: Electrostatics and short-range interactions

We investigate the phenomenon of multilayer formation via layer-by-layer deposition of alternating charged polyelectrolytes. Using mean-field theory, we find that a strong short-range attraction between the two types of polymer chains is essential for the formation of multilayers. For strong enough short-range attraction, the adsorbed amount per layer increases (after an initial decrease), and finally it stabilizes in the form of a polyelectrolyte multilayer that can be repeated hundreds of times. For weak short-range attraction between any two adjacent layers, the adsorbed amount (per added layer) decays as the distance from the surface increases, until the chains stop adsorbing altogether. The dependence of the threshold value of the short-range attraction as function of the polymer charge fraction and salt concentration is calculated.     

Observation of electronic states on Si(111)-(7 x 7) through short-range attractive force with noncontact atomic force spectroscopy

We experimentally reveal that the short-range attractive force between a Si tip and a Si(111)-(7 x 7) surface is enhanced at specified bias voltages; we conduct force spectroscopy based on noncontact atomic force microscopy with changing bias voltage at a fixed separation. The spectra exhibit prominent peaks and a broad peak, which are attributed to quantum mechanical resonance as the energy levels of sample surface states are tuned to those of the tip states by shifting the Fermi level through changing bias voltage, and to the resonating states over a lowered tunneling barrier, respectively.     

Controlled contact to a C60 molecule

The tip of a low-temperature scanning tunneling microscope is approached towards a C60 molecule adsorbed at a pentagon-hexagon bond on Cu(100) to form a tip-molecule contact. The conductance rapidly increases to approximately 0.25 conductance quanta in the transition region from tunneling to contact. Ab-initio calculations within density functional theory and nonequilibrium Green's function techniques explain the experimental data in terms of the conductance of an essentially undeformed C60. The conductance in the transition region is affected by structural fluctuations which modulate the tip-molecule distance.     

Distance dependence of noncontact-AFM image contrast on Si(111) × –Ag structure

Atomic resolution imaging of the Si(111) × R30°–Ag surface was investigated using a noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum. NC-AFM images showed three types of contrasts depending on the distance between an AFM tip and a sample surface. When the tip–sample distance was about 1–3 Å, the images showed the honeycomb arrangement with weak contrast. When the tip–sample distance was about 0–0.5 Å, the images showed the periodic structure composed of three bright spots with relatively strong contrast. On the other hand, the contrasts of images measured at the distance of 0.5–1 Å seemed to be composed of the above-mentioned two types of contrasts. By comparing the site of bright spots in the AFM images with honeycomb-chained trimer (HCT) model, we suggested the following models: when the tip is far from the sample surface, tip–sample interaction force contributing to imaging is dominated by physical bonding interaction such as Coulomb force and/or van der Waals (vdW) force between the tip apex Si atoms and Ag trimer on the sample surface. On the other hand, just before the contact, tip–sample interaction force contributing to imaging is dominated by chemical bonding such as the force due to hybridization between the dangling bond out of the tip apex Si atom and the orbit of Si–Ag covalent bond on the sample surface.     

Josephson and quasiparticle currents in tunneling junctions between partially dielectrized (partially gapped) superconductors with spin density waves

The current-voltage characteristics (CVC) are calculated for the Josephson, interference, and quasiparticle components of the current through a tunneling junction formed by two superconductors with spin density waves (SDW). The treatment is based on the model of partial dielectrization (gapping) of the Fermi surface and the assumption of pinning of the spin density waves. The following particular cases are studied in detail: asymmetric SDW superconductor-ordinary superconductor junctions and symmetric junctions between two identical SDW superconductors. The positions and nature of the singularities in the CVC are determined. For a symmetric contact the possibility of the existence of asymmetric CVC’s is predicted. The calculations are in qualitative agreement with the experimentally observed behavior of the CVC’s of tunneling junctions and microcontacts containing the SDW superconductor with heavy fermions URu₂Si₂. Fiz. Tverd. Tela (St. Petersburg) 41, 1743–1749 (October 1999)     

分子电子器件的电性能测试方法

介绍了用于两端分子电子器件电性能测试的纳米孔技术、交叉线接触技术、导电原子力显微镜技术、扫描隧道显微镜技术、纳米间距电极技术以及机械可控断裂结技术．结合分子器件的电性能测试要求，对各类测试方法进行了分析评价，并简要指出了分子器件电性能测试研究的发展趋势。     

The influence of tip–sample interaction on step fluctuations on Ag(111)

The fluctuations of the position of monatomic steps on Ag(111) are investigated by scanning tunneling microscopy (STM). We analyze the influence of tip–sample interaction by varying the gap impedance over more than two orders of magnitude. For tunneling tips providing a weak tip–sample interaction, we show that the step position autocorrelation function remains essentially unaltered. In this unperturbed case, the kinetics of step fluctuations are found to be dominated by one-dimensional mass transport. For larger variations of the tip–sample distance or for less favorable tip configurations, we observe a tip-induced increase of the step fluctuations. Our measurements suggest that this effect is caused rather by short-range forces than by the electric field in the tunneling gap.     

Effect of salt on the compression of polyelectrolyte brushes in a theta solvent

Classical strong-stretching theory (SST) predicts that, as opposing polyelectrolyte brushes are compressed together in a salt-free theta solvent, they contract so as to maintain a finite polymer-free gap, which offers a potential explanation for the ultra-low frictional forces observed in experiments despite the application of large normal forces. However, the SST ignores chain fluctuations, which would tend to close the gap resulting in physical contact and in turn significant friction. In a preceding study, we examined the effect of fluctuations using self-consistent field theory (SCFT) and illustrated that high normal forces can still be applied before the gap is destroyed. We now look at the effect of adding salt. It is found to reduce the long-range interaction between the brushes but has little effect on the short-range part, provided the concentration does not enter the salted-brush regime. Consequently, the maximum normal force between two planar brushes at the point of contact is remarkably unaffected by salt. For the crossed-cylinder geometry commonly used in experiments, however, there is a gradual reduction because in this case the long-range part of the interaction contributes to the maximum normal force.     

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.