Intrinsic versus extrinsic anomalous Hall effect in ferromagnets

A unified theory of the anomalous Hall effect (AHE) is presented for multiband ferromagnetic metals with dilute impurities. In the clean limit, the AHE is mostly due to extrinsic skew scattering. When the Fermi level is located around anticrossing of band dispersions split by spin-orbit interaction, the intrinsic AHE to be calculated ab initio is resonantly enhanced by its nonperturbative nature, revealing the extrinsic-to-intrinsic crossover which occurs when the relaxation rate is comparable to the spin-orbit coupling.     

Ab initio theory of the scattering-independent anomalous Hall effect

We report on first-principles calculations of the side-jump contribution to the anomalous Hall conductivity (AHC) directly from the electronic structure of a perfect crystal. We implemented our approach for a short-range scattering disorder model within the density functional theory and computed the full scattering-independent AHC in elemental bcc Fe, hcp Co, fcc Ni, and L1(0) FePd and FePt alloys. The full AHC thus calculated agrees systematically with experiment to a degree unattainable so far, correctly capturing the previously missing elements of side-jump contributions, hence paving the way to a truly predictive theory of the anomalous Hall effect and turning it from a characterization tool to a probing tool of multiband complex electronic band structures.     

Current carrying states in the disordered quantum anomalous Hall effect

In a quantum Hall effect, flat Landau levels may be broadened by disorder. However, it has been found that in the thermodynamic limit, all extended (or current carrying) states shrink to one single energy value within each Landau level. On the other hand, a quantum anomalous Hall effect consists of dispersive bands with finite widths. We numerically investigate the picture of current carrying states in this case. With size scaling, the spectrum width of these states in each bulk band still shrinks to a single energy value in the thermodynamic limit, in a power law way. The magnitude of the scaling exponent at the intermediate disorder is close to that in the quantum Hall effects. The number of current carrying states obeys similar scaling rules, so that the density of states of current carrying states is finite. Other states in the bulk band are localized and may contribute to the formation of a topological Anderson insulator.     

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about approximately 240 K (0.8TC).     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic （fcc） FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity （AHC） increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.     

Surface-quantized anomalous Hall current and the magnetoelectric effect in magnetically disordered topological insulators

We study theoretically the role of quenched magnetic disorder at the surface of topological insulators by numerical simulation and scaling analysis based on the massive Dirac fermion model. This addresses the problem of Anderson localization on chiral anomaly. It is found that all the surface states are localized, while the transverse conductivity is quantized to be ±e2/2h as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi et al. [Phys. Rev. B 78, 195424 (2008)] with the surface magnetization direction being controlled by the simultaneous application of magnetic and electric fields.     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic, and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically.Based on a unified semiclassical theoretical approach,it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions,namely an intrinsic contribution determined by the Berry curvature in the momentum space,an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering.The characteristics of these competing contributions are discussed in detail in the paper.     

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN2CSCl MXene

Quantum anomalous Hall effect (QAHE) is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention. However, it has only been observed in few materials in experiments. Here, according to the first-principles calculations, we report that the MXene MoYN$_{2}$CSCl shows a topologically nontrivial band gap of 37.3~meV, possessing QAHE with a Chern number of $C = 1$, which is induced by band inversion between $ {\rm d}_{xz}$ and ${\rm d}_{yz}$ orbitals. Also, the topological phase transition for the MoYN$_{2}$CSCl can be realized via strain or by turning the magnetization direction. Remarkably, MoYN$_{2}$CSCl shows the nodal-line semimetal state dependent on the electron correlation $U$. Our findings add an experimentally accessible and tunable member to the QAHE family, which stands a chance of enriching the applications in spintronics.     

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic, and external electric-field induced spinben orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.     

Liquid-vapor interface in liquid binary alloys: an ab initio molecular dynamics study

We report the results of an ab initio molecular dynamics simulation of the liquid-vapor interface of two binary liquid alloys, Na(0.3)K(0.7) and Li(0.4)Na(0.6), whose bulk behavior exhibits rather differing ordering tendencies. The study has been performed using samples of 2000 and 3000 particles, respectively, in a slab geometry with periodic boundary conditions. In both cases, the total ionic density distributions along the normal to the interface display some layering with a virtually pure monolayer of the lower surface tension component located outermost at the interface. However, the two systems behave very differently below the interface which can be accounted for by their different ordering tendencies in the bulk.     

Field dependence of the anomalous Hall effect coefficient of granular alloys with giant Magnetoresistance

It is shown theoretically that the anomalous Hall effect (AHE) coefficient R _s of magnetic granular alloys exhibiting giant magnetoresistance (GMR) depends strongly and, in the general case, nonmonotonically on the magnetic field as a result of the effect of the field on the character of the charge-carrier scattering and the AHE. The experimental data, presented by H. Sato, H. Hemmi, Y. Kobayashi et al., J. Appl. Phys. 76, 6919 (1994), on the field dependence R _s (H) in Co-Ag granular alloys at low temperatures are explained. The presence of a maximum in the field dependence |R _s (H)| in annealed Co-Ag alloys attests to the fact that skew scattering plays a dominant role in the formation of the AHE and that the main carriers of the AHE in these alloys are states whose spin polarization is directed oppositely to the magnetization. The presence of a minimum in this dependence for unannealed samples indicates nonuniformity of the granule size distribution. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 481–484 (25 March 1997)     

反常霍尔效应理论的研究进展

文章介绍了在铁磁性材料中反常霍尔效应的发现及其机制研究的历史;阐述了反常霍尔效应理论研究最近取得的重大进展,即倒空间中布洛赫态的贝里曲率(规范场)特性决定了霍尔电导率;同时指出,建立系统地解释反常霍尔效应机制的理论仍然是一个挑战性的任务.     

反常霍尔效应理论的研究进展

文章介绍了在铁磁性材料中反常霍尔效应的发现及其机制研究的历史；阐述了反常霍尔效应理论研究最近取得的重大进展，即倒空间中布洛赫态的贝里曲率（规范场）特性决定了霍尔电导率；同时指出，建立系统地解释反常霍尔效应机制的理论仍然是一个挑战性的任务．     

Crossover behavior of the anomalous Hall effect and anomalous nernst effect in itinerant ferromagnets

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are experimentally investigated in a variety of ferromagnetic metals including pure transition metals, oxides, and chalcogenides, whose resistivities range over 5 orders of magnitude. For these ferromagnets, the transverse conductivity sigma{xy} versus the longitudinal conductivity sigma{xx} shows a crossover behavior with three distinct regimes in accordance qualitatively with a recent unified theory of the intrinsic and extrinsic AHE. We also found that the transverse Peltier coefficient alpha{xy} for the ANE obeys the Mott rule. These results offer a coherent and semiquantitative understanding of the AHE and ANE to an issue of controversy for many decades.