The formation of a surface iodide on Ni{100} and adsorption of I2 at low temperatures

Iodine adsorption on clean Ni[100] has been investigated using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At temperatures below 340 K. a saturated surface of adsorbed iodine atoms in a c(2 × 2) structure is observed. Adsorption of iodine on clean Ni{100} at temperatures in exces of 370 K forms a structure identified as a single layer of the layered compound NiI₂ on the metal substrate. Solid iodine is shown to grow epitaxially on both the c(2 × 2) chemisorbed surface and the surface iodide at temperatures less than 185 K. Heating to 185 < T < 226 K leaves a physisorbed molecular iodine layer, while on returning to room temperature the original c(2 × 2) or iodide is restored.     

Synthesis, characterization and application of iodine modified titanium dioxide in phototcatalytical reactions under visible light irradiation

Iodine doped titanium dioxide has been successfully prepared by simple hydrolysis of tetrabutyl titanate in the presence of iodic acid. The adopted method allowed for the production of spherical iodine doped titaniun dioxide nanoparticles with varied amount of iodine content. Analysis by X-ray diffraction, Raman, transmission electron microscopy as well as UV-vis DRS revealed that titanium dioxide nanostructures were doped with iodine which existed in two different valence states I⁵⁺ and I⁻. The iodine in the form of I⁵⁺ is believed to have doped into the lattice whereas I⁻ was well dispersed on the surface of TiO₂ probably as iodine adducts hence rendering it to be highly absorbing in visible light region. The I-TiO₂ exhibited improved photocatalytic activity toward degradation of acid orange 7 (AO7), methyl orange (MO) and 2,4-dichlorophenol (2,4-DCP) under visible light over the pristine TiO₂ prepared by the same method. High catalytic properties are attributed to iodine doping which led to high specific surface area, absorption in visible region as well as alleviation of charge carrier recombination. The most probable route undertaken in the degradation of AO7 is through indirect oxidation by the hydroxyl radicals.     

Structural, optical properties and VCNR mechanisms in vacuum evaporated iodine doped ZnSe thin films

Iodine doped ZnSe thin films were prepared onto uncoated and aluminium (Al) coated glass substrates using vacuum evaporation technique under a vacuum of 3 × 10⁻⁵ Torr. The composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and study of I-V characteristics, respectively. In the RBS analysis, the composition of the deposited film is calculated as ZnSeI_0.003. The X-ray diffractograms reveals the cubic structure of the film oriented along (1 1 1) direction. The structural parameters such as crystallite size, strain and dislocation density values are calculated as 32.98 nm, 1.193 × 10⁻³ lin⁻² m⁻⁴ and 9.55 × 10¹⁴ lin/m², respectively. Spectroscopic ellipsometric (SE) measurements were also presented for the prepared iodine doped ZnSe thin films. The optical band gap value of the deposited films was calculated as 2.681 eV by using the optical transmittance measurements and the results are discussed. In the electrical studies, the deposited films exhibit the VCNR conduction mechanism. The iodine doped ZnSe films show the non-linear I-V characteristics and switching phenomena.     

Ni离子注入多晶ZrO2的表面电性能和结构

对氧化钇(Y₂O₃)部分稳定氧化锆(ZrO₂)样品在室温下进行了Ni离子注入(140kev,5×10¹⁵-2×10¹⁷ios/cm²)和热退火处理.应用电学测量,Rutherford背散射技术(RBS),X射线光电子能谱(XPS)和喇曼光谱方法研究了Ni离子注入多晶ZrO₂的表面电性能,注入层结构及其热退火的影响。     

Stability of Iodine Content in Iodized Salt

Abstract

Iodization of consumed salts is mandatory in many countries fighting against to iodine deficiency. In salts iodine stability is affected by storage conditions. In this study, stabilization of iodine in salt has been determined by using Isotope Dilution Analysis. Heating, heating with oxidizing agent, incubation by time were the parameters which have been determined. Iodine loss was 41.16% by heating at 200°C up to 24 hours. When the iodized salt heated with oxidized agent iodine loss rose up to 58.46% in 24 hours. Iodine loss mechanism seems similar in both cases. However iodine loss is greater in the presence of H₂O₂. After the salt was stored at room temperature with a relative humidity of 30%–45% and in sealed paper bags for three years, 58.5% of iodine content lost in approximately 3.5 years.     

Kinetics of decomposition of the solid electrolyte RbCu4Cl3I2

The processes of electrochemical decomposition of the solid electrolyte RbCu₄Cl₃I₂ at the vitreous carbon electrode and chemical decomposition of RbCu₄Cl₃I₂ by iodine has been investigated. The anodic decomposition of the electrolyte occurs in two steps. At first, the oxidizing electrode reaction of Cu⁺ ions up to Cu²⁺ ions takes place at potentials higher than 0.57 V and onto the electrode surface the layer of decomposition products is formed, including the compound of divalent copper RbCuCl₃. Then the oxidizing reaction of I ions occurs at potentials higher than approximately 0.67 V with deposition of the iodine layer onto the electrode surface. The deposition rate of the layers of decomposition products is controlled by instantaneous nucleation and two-dimensional growth of the deposit. It was shown that slow diffusion of the iodine in the reaction product layer is a limiting step in the chemical interaction of iodine with RbCu₄Cl₃I₂. For the compressed RbCu₄Cl₃I₂ sample investigated, iodine diffusion coefficient was calculated to be 6.2×10⁻⁷ cm² s⁻¹. Iodine loss from the glassy carbon surface is about 1.1×10⁻⁴ g cm⁻² s⁻¹ at the thickness of the RbCu₄Cl₃I₂ sample is equal to 2 mm.     

Reconstruction dependence of the etching and passivation of the GaAs(001) surface

The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface.     

Diffusion and chemical composition of TiNxOy thin films studied by Rutherford Backscattering Spectroscopy

Thickness and chemical composition of the TiN_xO_y thin films deposited by reactive magnetron sputtering from Ti target at controllable oxygen flow rate were determined by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The films were deposited on carbon foils and amorphous silica (a-SiO₂) substrates at 25 °C and 250 °C. The estimated film thickness is of 75-100 nm. The O/Ti atomic ratio in the films increases up to 1.5 with increasing oxygen flow rate, while that of N/Ti decreases from about 1.1 for TiN to 0.4 at the highest oxygen flow rate. Substantial out-diffusion of carbon from the substrate is observed which is independent of the substrate temperature. Films grown onto a-SiO₂ substrates can be treated as homogeneous single layers without interdiffusion. It is more difficult to determine the nitrogen and oxygen content due to superposition of RBS signals arising from film and substrate. RBS analysis of the depth profile indicates that for the investigated films the carbon diffusion and oxidation not only at the topmost surface layers but over the bulk of the films were found. Comparison with XPS results indicates substantial oxygen adsorption at the surface of TiN_x thin films obtained at zero oxygen flow rate.     

X-ray photoelectron spectroscopy of boron implanted 4145 steel surface

The near-surface region of 4145 steel following boron implantation was investigated by x-ray photoelectron spectroscopy (XPS). The steel surface was implanted with¹¹B⁺ ions to a constant dose of 1.0×10¹⁷ ions cm^–2 at energies of 30 and 135 keV. The XPS spectrum of the implanted surface showed a shift in the B(1s) level towards the higher binding energy. The observed 188.0 eV binding energy of the B(1s) level was found to be in good agreement with the characteristic binding energy of the B(1s) level corresponding to iron boride (Fe₂B). Hence the increase in surface hardness reported previously is related to the formation of an iron boride layer in the near-surface region known for its hardening capabilities.     

Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process

We study the initial growth stages of CdS thin films deposited by an ammonia-free chemical bath deposition process. This ammonia-free process is more environmentally benign because it reduces potential ammonia release to the environment due to its high volatility. Instead of ammonia, sodium citrate was used as the complexing agent. We used atomic force microscopy (AFM), Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) to investigate the morphological and chemical modifications at the substrate surface during the first initial stages of the CdS deposition process. Additionally, X-ray diffraction (XRD) and optical transmission spectroscopy measurements were carried out to compliment the study. XPS results show that the first nucleation centers are composed by Cd(OH)₂ which agglomerate in patterns of bands, as demonstrated by AFM results. It is also observed that the conversion to CdS (by anionic exchange) of the first nucleus begins before the substrate surface is completely covered by a homogenous film.     

Preparation and characterization of iodine-doped mesoporous TiO2 by hydrothermal method

Iodine-doped mesoporous TiO₂ (I/TiO₂) was prepared by hydrothermal method, using tetrabutyl titanate as precursor, potassium iodate as iodine sources. The as-prepared I/TiO₂ catalysts were characterized by UV-vis, XRD, TEM, BET, TG/DTA, XPS and photoluminescence (PL) spectroscopy. Production of OH radicals on the I/TiO₂ surface was detected by the PL technique using terephthalic acid as a probe molecule. The effects of hydrothermal reaction temperature, calcination temperature and iodine doping content on the structure and properties of the catalysts were investigated. The results showed that iodine-doped TiO₂ calcinated at 300 °C have good anatase crystal. The optimal hydrothermal conditions have been determined to be that reaction temperature 120 °C, calcinated temperature 300 °C and added 1.16 mmol iodine dopants. The average particle size of I/TiO₂ synthesized under optimal condition (I-3 sample) is about 3.9 nm. The I-3 photocatalyst contains 100% anatase crystalline phase of TiO₂. BET specific surface area of I-3 sample is184.8 m² g⁻¹ and is 3.67 times that of pure TiO₂ (50.37 m² g⁻¹). Iodine in I/TiO₂ catalyst mainly exists in the form of I₂, and photoactivity of I/TiO₂ catalyst in visible light comes from photosensitize of I₂. I/TiO₂ catalysis shows very high efficiency for the degradation of phenol under visible light.     

Mechanically alloyed Al-I composite materials

Mechanically alloyed aluminum-iodine composites with iodine concentrations from 4 to 17 wt% were prepared from elemental aluminum and iodine. A reference sample was prepared from aluminum and AlI₃. A shaker mill and an attritor mill, operating at both room temperature and liquid nitrogen temperature, were used for preparation. Materials were characterized by electron microscopy and X-ray diffraction. The iodine release upon heating was studied using thermogravimetry. Mechanical alloying was found to be effective for preparation of Al-I composites that do not release iodine until the material is brought to high temperatures. Mechanical alloying in nitrogen gas at liquid nitrogen temperature was more effective in preparing stabilized Al-I composites than milling at room temperature. Iodine was not retained in materials milled directly in liquid nitrogen. In addition to poorly crystalline AlI₃, other iodine compounds were present in the products. Assuming that the products are similar to other mechanically alloyed materials, it is expected that iodine is mixed with aluminum on the atomic scale, forming metastable Al-I compounds where iodine may be bonded to aluminum more strongly than in AlI₃, explaining why their thermal decomposition and respective iodine release occur at higher temperatures compared to decomposition and boiling of AlI₃.     

127I Mössbauer spectra of iodine adsorbed on zeolites

The adsorption behavior of iodine on zeolites and silver-loaded zeolites has been studied by¹²⁷I Mössbauer spectroscopy. Iodine is adsorbed on zeolites in two forms. One is a physically adsorbed species and the other is a dissociative species. The former is the major form and their intermolecular interactions are suggested to be weakened. Iodine is converted to silver iodide on the surface of silver-loaded zeolites, although some portion is physically adsorbed.     

脉冲激光沉积的金属原子团簇的电子状态及生长的研究

 介绍了采用X射线光电子谱(XPS)等技术研究脉冲激光沉积在Ni、Mo、C、NaCl(100)表面的Cu、Au原子团簇的电子状态;结合Cu₂p_3/2 X射线光电子谱峰和Cu L₃M_4,5M_4,5俄歇跃迁分离了电子结合能的初态和终态贡献,得出了它们随Cu表面浓度变化的关系,并对之作出了解释。使用XPS、RBS、TEM三项技术研究了Au在NaCl(100)表面的生长过程,通过计算得出了在不同表面浓度下Au原子团簇的平均高度和表面覆盖率。     

Effect of composition on properties of reactive Al·B·I2 powders prepared by mechanical milling

Metal-based fuels producing halogen-containing combustion products are being developed to enable rapid inactivation of harmful aerosolized spores and bacteria. Ternary reactive materials containing aluminum, boron, and iodine were prepared by mechanical milling with systematically varied Al:B ratio. The aluminum mass fraction varied from 0% to 70%, and most materials included 20 wt% of iodine. Prepared powders were inspected by electron microscopy; particle size distributions were measured using low angle laser light scattering. Stability of materials was studied using thermo-gravimetry and differential scanning calorimetry. As-prepared as well as pre-heated and quenched samples were analyzed using x-ray diffraction. Iodine was released upon heating in several stages. Low-temperature iodine release was relatively small. It overlapped with decomposition of B(OH)₃ releasing water. The most significant amounts of iodine were released when the samples were heated to 400–500 °C, when AlB₂ formed. Both AlB₂ formation and iodine release were further accelerated by melting of aluminum. For the boron-rich samples, in which boron remained after all aluminum was used to form AlB₂, an additional, high-temperature iodine release stage was observed near 900 °C. The results show that both boron and aluminum are capable of stabilizing substantial quantities of iodine in the metal matrix. The iodine is released at temperatures much greater than its boiling point. The mechanism by which iodine is retained in boron and aluminum remains unclear.     

Analysis profiles of oxide films on chrome steel by auger emission and x-ray photoelectron spectroscopies

Samples of steel from two different sources were examined. The materials had nominally the same bulk composition but different samples from each batch had been hardened under two slightly different conditions.The surface oxide films were analysed by both Auger emission spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) after a number of ion bombardments, and the variation in composition with depth was established. In general the outermost oxide layers were chromium deficient and XPS results suggested the presence of Fe₂O₃ at the surface, together with atmospheric contamination. After ion bombardment the proportion of chromium oxide increased and both iron metal and oxide (Fe₃O₄) were present. The amount of chromium oxide reached a maximum at the steel oxide interface and on further bombardment was replaced by chromium metal. AES and XPS results were in agreement qualitatively and also quantitatively after measurement with a curve analyser of the areas under the peaks of certain elements.The present investigation has shown that AES and XPS can give very similar analyses provided some simple corrections are applied. However, the use of the higher resolution of XPS can provide additional information which cannot be obtained by AES. Thus, using expanded XPS scans, together with suitable curve analysis techniques, it is relatively simple to separate signals from oxide and from free metal regions of the sample, and to study in detail the changes in composition of the oxide from the oxide-air to the oxide-metal interfaces.The study of the four steel samples in this manner has shown that there is a thin region rich in chromium oxide adjacent to the metal. The high level of chromium falls off fairly rapidly nearer the surface and appears to stabilize at a very low level. This is particularly obvious in the thicker oxides (PH), where there is a thick surface layer which is principally iron oxide. It would appear that under the conditions of the heat treatment given to the present samples the thickening of the oxide is due almost entirely to iron oxide. Other work has shown that the low temperature air-formed oxide on these steels is chromium rich and it is suggested that the thickening is due to diffusion of iron through the original film with little movement of the chromium.In view of the high chromium deficiency in the outer layers of the oxides examined it is apparent that the supposedly protective chromium oxide film on chrome steel is situated at the oxide-metal interface and not on the outer surface.The present investigation has shown the existence of two unreported iron satellites. One would appear to be associated with the mixed valence oxide Fe₃O₄ and another with the purely trivalent oxide Fe₂O₃. The satellites could be associated with a strong plasma loss mechanism, or be due to shake-up phenomena as in the case of copper and nickel oxides¹⁴As might be expected from the normal oxidation behaviour of iron, the present oxide films appear to consist of a thin layer of Fe₂O₃ overlying the main Fe₃O₄ oxide. The removal of this outermost Fe₂O₃ layer is rapid and is accompanied by the changes in the satellites mentioned above, together with changes in the position of the Fe 2p_{$\text{3}\text{2}$} oxide peak.In conclusion, it is clear that a detailed XPS examination can not only provide information on overall compositional changes, as can be obtained by AES, but can also provide a comprehensive picture of changes in oxide composition, including those due to oxides of one metal in different valency states.     

Emission characteristics of a discharge iodine vapor plasma in the spectral region of the main absorption maximum of DNA molecules

Radiation of glow and capacitive discharges in inert gas-iodine vapor mixtures is studied in the spectral range 150–210 nm, which coincides with the main absorption maximum of the DNA molecules. Iodine atomic spectral lines at 150.7, 161.8, 170.2, 183.0, and 206.2 nm are observed in the spectra. The emission intensity of the iodine spectral lines is optimized by varying the glow discharge current, capacitive discharge frequency, as well as pressure and composition of the gas mixtures. The glow and capacitive discharges are ignited in cylindrical quartz tubes with interelectrode gaps of 10 and 6 cm. Helium and neon are found to be the most effective buffer gases. The optimum partial pressures of the light inert gases and iodine vapor in the glow discharge are within 0.4–0.6 kPa and 100–150 Pa, respectively. In the capacitive discharge in He(Ne)-I₂ mixtures, the optimum partial helium, neon, and iodine vapor pressures are within 0.8–2.0 kPa, 0.5–1.0 kPa, and ≤ 60 Pa, respectively. It is demonstrated that pulsed bactericidal radiation sources with light pulse lengths of 400–500 ns and continuous radiation sources emitting within the spectral range 150–207 nm can be designed on the basis of low-density iodine vapor plasma.     

Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures

Silicon wafers of different orientations were treated with gaseous hydrogen chloride at elevated temperatures in a chemical vapor deposition (CVD) reactor to generate chlorinated surfaces. After the chlorination process, a smooth surface morphology with single layer steps was observed on Si(1 1 1) surfaces. X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering (RBS) measurements showed that the chlorine coverage is directly affected by the Si surface orientation. The surface chlorine is highly reactive with moisture and alcoholic compounds, which provides a new route for organic molecular functionalization of silicon surfaces.     

用掩蔽注入法研究钛注入H13钢的耐磨性

采用由金属蒸汽真空弧离子源引出的强束流钛、碳离子对H13钢进行表面改性研究.钛和碳离子注入剂量分别为3×1017和1×1017cm-2,引出电压分别为48和30kV，平均束流密度分别为47和20μA·cm-2.为了保持相同的摩擦磨损实验条件，注 入过程中采用掩蔽注入技术.摩擦磨损实验结果表明，钛离子注入H13钢提高了其耐磨性，并大幅度降低其摩擦系数.利用卢瑟福背散射谱测量了离子注入表面的成分，并采用逐层递推 法得出了钛在H13钢中的浓度深度分布，借助掠面x射线衍射考察了注入表面的相结构. 关键词： 钛离子注入 金属蒸汽真空弧 卢瑟福背散射 掠面x射线衍射     

Shallow surface etching of organic and inorganic compounds by electrospray droplet impact

The electrospray droplet impact (EDI) was applied to bradykinin, polyethylene terephthalate (PET), SiO₂/Si, and indium phosphide (InP). It was found that bradykinin deposited on the stainless steel substrate was ionized/desorbed without the accumulation of radiation products. The film thickness desorbed by a single collisional event was found to be less than 10 monolayers. In the EDI mass spectra for PET, several fragment ions were observed but the XPS spectra did not change with prolonged cluster irradiation. The etching rate for SiO₂ by EDI was measured to be ∼0.2 nm/min. The surface roughness of InP etched by EDI was found to be one order of magnitude smaller than that etched by 3 keV Ar⁺ for about the same etching depths. EDI is capable of shallow surface etching with little damage left on the etched surface.