Kinetics of hydrochemical deposition of PbSe films in the presence of ascorbic acid

The boundary conditions of the formation of PbSe and concomitant impurity phases, Pb(OH)₂ and PbCN₂, were determined by calculation of the ionic equilibria in the Pb²⁺–Na₃C₅Н₆О₇–CH₄N₂Se system. Complex kinetic studies of the PbSe deposition from an ammonia–citrate mixture containing ascorbic acid as antioxidant for selenourea were performed. PbSe films 250 to 425 nm thick were synthesized by the hydrochemical method based on the results obtained. The absence of impurities in the deposited samples was confirmed by X-ray diffraction analysis.     

The effect of Sn dopant on crystal structure and photocatalytic behavior of nanostructured titania thin films

In this study, preparation of Sn doped (0–30 mol % Sn) TiO₂ dip-coated thin films on glazed porcelain substrates via sol–gel process have been investigated. The effects of Sn content on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), field emission SEM (FE-SEM), and high resolution transmission electron microscopy (HR-TEM). Surface topography and surface chemical state of thin films were examined by atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). XRD patterns showed an increase in peak intensities of the rutile crystalline phase by increasing the Sn dopant. The prepared Sn-doped TiO₂ photo-catalyst films showed optical absorption edge in the visible light area and exhibited excellent photo-catalytic ability for degradation of methylene blue solution under UV irradiation. The result shows that doping an appropriate amount of Sn can effectively improve the photo-catalytic activity of TiO₂ thin films, and the optimum dopant amount is found to be 15 mol%. The Sn⁴⁺ dopants substituted Ti⁴⁺ in the lattice of TiO₂ and increased surface oxygen vacancies and the surface hydroxyl groups. TEM results showed small increase in planar spacing (was detected by HR-TEM caused by Sn dopants in titania based crystals).     

Enhanced photo-catalytic activity of TiO2 nanostructured thin films under solar light by Sn and Nb co-doping

In this study, preparation of Sn and Nb co-doped TiO₂ dip-coated thin films on glazed porcelain substrates via sol–gel process have been investigated. The effects of co-doping content on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction (XRD), field emission SEM (FE-SEM), high resolution transmission electron microscopy (HR-TEM), and UV–Vis absorption spectroscopy. Surface chemical state of thin films was examined by atomic X-ray photoelectron spectroscopy (XPS). XRD results suggest that adding impurities has a great effect on the crystallinity and particle size of TiO₂. Titania Rutile phase formation in thin film was promoted by Sn⁴⁺ addition but was inhibited by Nb⁵⁺ doping. The prepared co-doped TiO₂ photo-catalyst films showed optical absorption edge in the visible light area and exhibited excellent photo-catalytic ability for degradation of methylene blue (MB) solution under solar irradiation. Comparison with undoped and Sn or Nb-doped TiO₂, codoped TiO₂ shows an obviously higher catalytic activity under solar irradiation.     

A Highly Sensitive and Selective Non-enzymatic Hydrogen Peroxide Sensor Based on Nanostructured Co3O4 Thin Films Using the Sol-gel Method

In this work we report an easy and efficient way to fabricate nanostructured cobalt oxide (Co₃O₄) thin films as a non-enzymatic sensor for H₂O₂ detection. Co₃O₄ thin films were grown on ITO glass substrates via the sol-gel method and characterized with several techniques including X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and optical absorbance. The Co₃O₄ thin films’ performance regarding hydrogen peroxide detection was studied in a 0.1 M NaOH solution using two techniques, cyclic voltammetry (CV) and amperometry. The films exhibited a high sensitivity of 1450 μA.mM⁻¹.cm⁻², a wide linear range from 0.05 μM to 1.1 mM, and a very low detection limit of 18 nM. Likewise, the Co₃O₄ thin films produced showed an exceptional stability and a high selectivity.     

Novel chemical synthesis of polypyrrole thin film electrodes for supercapacitor application

Present investigation describes the cost-effective, novel and simple chemical synthesis of polypyrrole (PPy) thin films for supercapacitor application. These PPy films are characterized by different techniques such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The XRD pattern reveals the amorphous nature of PPy thin film, which is highly feasible for supercapacitors. Further, FTIR study confirms the formation of PPy. The surface morphological study exhibit the coverage of uniform and smooth morphology on thin film. The electrochemical supercapacitive properties of PPy thin films are evaluated using cyclic voltammetry (CV) in 0.5 M H₂SO₄ electrolyte, which exhibits the maximum specific capacitance of 329 Fg⁻¹ at the scan rate of 5 mV s⁻¹. Additionally, an equivalent series resistance (ESR) of PPy thin films is found to be 1.08 Ω using electrochemical impedance measurement.     

Microwave assisted novel MoBi2S5 nanoflowers: Synthesis,characterization, photoelectrochemical performance

In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi₂S₅ thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi₂S₅ thin films. The XRD patterns confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.     

Synthesis, morphology and specific magnetization of the electrodeposited Zn-Ni-P thin films on copper substrate from non-cyanide electrolyte

Thin films of Zn-Ni-P on a copper substrate were synthesized by electrodeposition from chloride baths. It was found that the diffraction reflections of the crystal structure of Zn-Ni-P thin layers occur at thicknesses d ≥ 5 µm. The X-ray diffraction studies results confirm the formation in the Zn-Ni-P films of ZnNi₁₀P₃ compound. The morphology of the obtained films was analyzed by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS). The films are continuous and have a typical topography with many homogeneous globular features. EDS confirmed the formation of Zn-Ni-P coating only in 2 samples with Zn:Ni:P atomic ratios of 1:8:4 and 4:8:3, respectively. X-ray Photoelectron Spectroscopy (XPS) revealed the chemistry and the thickness of the studied thin films. At room temperature and thickness d ≥ 5 µm the investigated thin layers exhibit high values of the specific magnetizations in the range (25–37) A m² kg^?1, leading to the potential use in devices, appliances and electronics. The Curie temperature values of the synthesized Zn-Ni-P films were determined. It was found that by heating Zn-Ni-P thin layers of thicknesses d ≥ 5 µm up to a temperature T=900 K an interaction was detected with the copper substrate leading to a lower specific magnetization.      

X-ray absorption fine structure study of amorphous metal oxide thin films prepared by photochemical metalorganic deposition

The oxidation state and local geometry of the metal centers in amorphous thin films of Fe₂O₃ (Fe³⁺ oxidation state), CoFe₂O₄ (Co²⁺/Fe³⁺ oxidation states), and Cr₂O₃ (Cr³⁺ oxidation state) are determined using K edge X-ray absorption near-edge structure (XANES) spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. The metal oxide thin films were prepared by the solid-state photochemical decomposition of the relevant metal 2-ethylhexanoates, spin cast as thin films. No peaks are observed in the X-ray diffraction patterns, indicating the metal oxides are X-ray amorphous. The oxidation state of the metals is determined from the edge position of the K absorption edges, and in the case of iron-containing samples, an analysis of the pre-edge peaks. In all cases, the EXAFS analysis indicates the first coordination shell consists of oxygen atoms in an octahedral geometry, with a second shell consisting of metals. No higher shells are observed beyond 3.5 Å for all samples, indicating the metal oxides are truly amorphous, consistent with X-ray diffraction results.     

CuInS2：两步电沉积制备及性能

采用恒电位沉积法制备铜铟合金预制膜,并存管式炉中通过固态源蒸发硫化预制膜得到CuInS:薄膜.通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表而形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS:薄膜的形貌及其光学吸收性质的影响.结果表明:不同的退火温度能够影响CuInS:薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性.     

Electrodeposition and characterization of PbSe films on indium tin oxide glass substrates

Electrodeposition of lead selenide (PbSe) thin films on indium tin oxide (ITO) covered glass is described. While disodium salt of ethylenediaminetetraaceticacid was used to complex the lead ions, well crystallized, nearly stoichiometric and mirror-like PbSe films were deposited on ITO glass in potentiostatic mode using aqueous acidic electrolyte containing Pb and Se precursors at different bath temperature. The improvement of crystallinity of the PbSe films deposited at different temperature was studied using X-ray diffraction and Raman scattering. The morphology and composition of the films were characterized by scanning electron microscopy and energy disperse analysis by X-ray, respectively. The optical property of the film was studied by optical measurement techniques.     

溶胶浸渍模板法制备有序多孔氧化钛、氧化锌薄膜

采用溶胶浸渍模板法制备了有序多孔的氧化钛(TiO₂)和氧化锌(ZnO)薄膜。首先，在洁净的玻璃基片上通过浸渍-提拉工艺组装有序的聚苯乙烯微球(PS)阵列模板；然后再采用溶胶浸渍法将TiO₂和ZnO溶胶灌充到PS模板微球的间隙内；最后通过煅烧去除PS而得多孔薄膜。采用SEM观察了薄膜的表面形貌，并用XRD对薄膜的性能进行了表征。结果表明，溶胶的浓度对薄膜形貌有着显著的影响。经煅烧后，TiO₂和ZnO薄膜分别为锐钛矿和六方纤锌矿结构。此外，对模板的组装及溶胶的灌注过程进行了分析。     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

超声电化学制备PbSe纳米枝晶

近年来，纳米晶态半导体粒子因其具有大的表面体积比、高的活性、特殊的电学性质和独特的光学性质引起了科学界的广泛关注犤１，２犦。基于半导体纳米粒子的量子尺寸效应和表面效应，半导体纳米粒子在发光材料犤３犦、非线性光学材料犤４犦、光敏传感器材料犤５犦、光催化材料犤６犦等方面具有广阔的应用前景。如何实现对半导体纳米粒子的尺寸大小、粒度分布以及形状和表面修饰的控制，寻找更简便的合成方法以及改善制备环境等是半导体纳米粒子研究的关键。超声电化学是结合了电化学和超声辐照而建立起来的一种新方法，它显示了两者的优点犤…     

Preparation and photoelectric properties of mesoporous ZnO films

Mesoporous ZnO films doped with Ti⁴⁺ (M-ZnO) have been prepared by doping process and sol–gel method. The films have mesoporous structures and consist of nano-crystalline phase, as evidenced from small angle X-ray diffraction and high resolution transmission electron microscopy. The wide angle X-ray diffraction of M-ZnO films confirms that M-ZnO has hexagonal wurtzite structure and ternary ZnTiO₃ phases. Ultraviolet–visible transmittance spectra, absorbance spectra and energy gaps of the films were measured. The Eg of M-ZnO is 3.25 eV. Photoluminescence intensity of M-ZnO centered at 380 nm increases obviously with the excitation power, which is due to the doping process and enhanced emission efficiency. M-ZnO thin films display a positive photovoltaic effect compared to mesoporous TiO₂ (M-TiO₂) films.     

Investigation of the structural properties of annealed CdIn2Te4/CdS thin film solar cells produced by the electron-beam evaporation (e-beam) technique

Thin film CdIn₂Te₄/CdS solar cells were deposited onto the ITO-coated glass substrate by electron beam evaporation (e-beam) technique, and the the effect of annealing on their structural properties is studied. The annealing was performed under nitrogen atmosphere for 1 h. The manufactured solar cells were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX) analysis. Crystallite size (D), inter-planer distance (d) and lattice constant (a) values were calculated for the thin film solar cell from XRD data. Annealed samples display well defined XRD patterns with three diffraction peaks. We observed increased peak intensity in the annealed films. EDAX analysis showed that only CdIn₂Te₄ is present in absorber layer and CdS is found in the window layer, but no impurity atoms are present the structure. It is observed that surface roughness of the annealed films incresed, according to SEM images. The I–V characteristics show that the current is increased for annealed thin films solar cells.

     

Structural and electrical properties of chemical solution deposited (Bi0.9Tb0.1)(Fe0.975 TM 0.025)O3±δ (TM = Ni, Mn and Ti) thin films

Effects of Tb and transition metal (TM = Ni, Mn and Ti) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO₃ thin films prepared by using a chemical solution deposition method were reported. From X-ray diffraction and Raman scattering analyses, distorted rhombohedral perovskite structures were observed for all thin films. Improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 2.67 × 10^?6 A/cm² (at 100 kV/cm), large remnant polarization (2P _r ) of 82.2 μC/cm² and low coercive field (2E_c) of 680 kV/cm (at 1,036 kV/cm) were measured for the (Tb, Mn) co-doped thin film.     

Comparison of optical and structural properties of nanostructure TiO2 thin film doped by Sn and Nb

The thin films of TiO₂ doped by Sn or Nb were prepared by sol–gel method under process control. The effects of Sn and Nb doping on the structural, optical and photo-catalytic properties of applied thin films have been studied by X-ray diffraction (XRD) high resolution transmission electron microscopy and UV–Vis absorption spectroscopy. Surface chemical state of thin films was examined by atomic X-ray photoelectron spectroscopy. XRD results suggest that adding impurities has a great effect on the crystallinity and particle size of TiO₂. Titania rutile phase formation in thin film was promoted by Sn⁴⁺ addition but was inhibited by Nb⁵⁺ doping. The activity of the photocatalyst was evaluated by photocatalytic degradation kinetics of aqueous methylene blue under UV and Visible radiation. The results show that the photocatalytic activity of the Sn-doped TiO₂ thin film have a larger degradation efficiency than Nb-doped TiO₂ under visible light, but under UV light photocatalytic activity of the Nb-doped TiO₂ thin film is better.     

石墨烯-氧化钌纳米复合材料的水热法合成及电化学电容性能

通过水热法制备了石墨烯-氧化钌(G-RuO₂)纳米复合材料。对样品进行了X射线衍射(XRD),扫描电子显微镜(SEM),透射电子显微镜(TEM)和能量色散谱(EDS)表征。SEM结果表明氧化钌粒子均匀地分散在石墨烯层片上。TEM结果显示氧化钌纳米粒子的平均粒径约为3 nm。对样品进行了循环伏安和充放电性能测试,结果表明在1 A·g^-1的电流密度下,样品在H₂SO₄(1 mol·L^-1)溶液中具有219.7 F·g^-1的比电容。     

Preparation and characterization of thin TiO2-films on gold/mica

Flat and highly (111) oriented gold and silver films were prepared by physical vapour deposition (PVD) using optimized deposition parameters. On these films, which were characterized with atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), titanium dioxide films were deposited by electron beam evaporation and dip coating. Dip coating from titanium tetraisopropoxide solutions resulted in films with different morphology and coverage depending on the alkoxide concentration (0.009 mol/L – 0.60 mol/L) and the post-treatment. Scanning electron microscopy (SEM) and AFM revealed that the deposited TiO₂ consists of amorphous, highly porous islands when the applied alkoxide concentration is high (0.05 mol/L – 0.6 mol/L). At higher temperatures these amorphous TiO₂ islands sintered significantly and crystallized to anatase. In contrast, transparent TiO₂ films were obtained from low concentrated alkoxide solutions (< 0.01 mol/L) which covered the whole substrate, similar to electron beam evaporated thin films. Sputter profiles with ion scattering spectroscopy (ISS) indicated that the film thickness is in the range of 2 nm when alkoxide solutions with a concentration of 9 mmol/L are used. The deposition of TiO₂ by electron beam evaporation normally resulted in significantly reduced TiO₂ films, completely oxidized ones were obtained when deposition was performed at elevated oxygen partial pressures (p(O₂) > 2 × 10^–5 mbar).     

The oxygen sensitive properties of (LaBa)Co2O5+δ thin films fabricated by polymer-assisted deposition technique

(LaBa)Co₂O_5+δ (LBCO) thin films were successfully fabricated on Si (001) substrates by polymer-assisted deposition method. Microstructures were examined by X-ray diffraction technique, which confirmed the films were a single phase, pseudo cubic structure. The electrical transport properties of the films were investigated by the temperature dependence of films resistance, which suggested that LBCO films have typical semiconductor properties. After circle tests, the oxygen–hydrogen response rate did not show obvious variation in the specific temperature environment of 580 °C. This demonstrates that the LBCO thin films have a superior stability in both oxygen and hydrogen (6 % H₂, 94 % N₂) environment. Simultaneously, the drastic changes of films resistance (from ~10⁶ to ~10² Ω) with the switch of redox (O₂–H₂) environment within such a short time (~2.2 s) indicated that LBCO films have an excellent oxygen sensitive property and extraordinary fast surface exchange rate.