Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields

We report an experimental study indicating ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice under the action of a THz field. Our experiment was performed for an InGaAs/InAlAs superlattice with the conduction electrons undergoing miniband transport. We applied to a superlattice a dc bias that was slightly smaller than a critical bias necessary for the formation of space-charge domains caused by a static negative differential conductivity. Additionally subjecting the superlattice to a strong THz field, resulted in a dc transport governed by the formation of domains if the frequency of the field was smaller than an upper frequency limit (~3 THz). From this frequency limit for the creation and annihilation of domains we determined the characteristic time of the domain buildup. Our analysis shows that the buildup time of domains in a wide miniband and heavily doped superlattice is limited by the relaxation time due to scattering of the miniband electrons at polar optic phonons. Our results are of importance for both an understanding of ultrafast dynamics of pattern formation in nanostructures and the development of THz electronic devices.Received: 25 March 2004, Published online: 23 July 2004PACS: 72.20.Ht High-field and nonlinear effects - 72.30. + q High-frequency effects; plasma effects - 73.21.Cd SuperlatticesK.N. Alekseev: Permanent address: Department of Physical Sciences, P.O. Box 3000, University of Oulu FIN-90014, Finland.     

Nonparabolic multivalley balance-equation approach to impact ionization: Application to wurtzite GaN

Extended nonparabolic multivalley balance equations including impact ionization (II) process are presented and are applied to study electron transport and impact ionization in wurtzite-phase GaN with a , L-M, and conduction band structure at high electric field up to 1000kV/cm. Hot-electron transport properties and impact ionization coefficient are calculated taking account of the scatterings from ionized impurity, polar optical, deformation potential, and intervalley interactions. It is shown that, for wurtzite GaN when the electric field approximately equals 530kV/cm, the II process begins to contribute to electron transport and results in an increase of the electron velocity and a decrease of the electron temperature, in comparison with the case without the II process. Similar calculations for GaAs are also carried out and quantitative agreement is obtained between the calculated II coefficients by this present approach and the experimental data. Relative to GaAs, GaN has a higher threshold electric field for II and a smaller II coefficient. Received: 27 April 1998 / Revised: 17 July 1998 / Accepted: 13 August 1998     

Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems

The linear dc and high-frequency transresistivity of coupled electron-hole systems are investigated using the Lei-Ting balance equations approach extended to include many-body corrections. A possible indirect method of experimentally measuring the dynamical transresistivity in the high frequency (terahertz) regime is designed basing on the detailed analysis on the relationship between the directly measurable resistivities in the electron- and hole-layer and the dynamical transresistance. The theoretically predicted dc transresistance is in good agreement with the experimental data for the given electron-hole system experimentally investigated. The calculated dynamical transresistance exhibits pronounced double-resonant structure, which can be attributed to the cooperation and competition between the two plasmon modes. It is pointed out that the behavior of the frequency-dependent transresistance is temperature-sensitive and the dynamical transport properties are essentially influenced by the short range correlations. Received: 1st April 1998 / Revised: 22 June 1998 / Accepted: 6 August 1998     

Balance-equation approach to terahertz-field-driven magnetotransport in semiconductors

We investigate the magnetotransport in semiconductors under the influence of a dc or slowly-varying electric field, an intense polarized radiation field of terahertz frequency, and a uniform magnetic field, being in arbitrary directions and having arbitrary strengths. Effective force- and energy-balance equations are derived by using a gauge that the magnetic field and the high-frequency radiation field are described by a vector potential and the dc or slowly-varying field by a scalar potential, and by distinguishing the slowly-varying velocity from the rapidly-oscillating velocity related to the high-frequency field. These equations, which include the elastic photon process and all orders of multiphoton absorption and emission processes, are applied to the examination of the effect of a terahertz radiation on the magnetophonon resonance of the longitudinal resistivity in the transverse configuration in nonpolar and polar semiconductors. We find that the previous zero-photon resonance peaks are suppressed by the irradiation of the terahertz field, while many new peaks, which may be related to multiphoton absorption and emission processes, emerge and can become quite distinct, at moderately strong radiation field. Received 17 May 1999     

Microscopic Three-Dimensional Theory of Space-Charge-Wave Modes in GaAs-Based Planar Superlattices

We report a systematic, fully three-dimensional thkoreticd examination of convective space-charge wave modes of a planar superlattice subject to negative differential miniband conductance (NDC) in a dc bias electric field. Our analysis is based on a set of hydrodynamic balance equations for system having an arbitrary energy band, with an accurate microscopic treatment of phonon and impurity scatterings. When applied to the longitudinal transport of an unconfined planar superlattice, these equations, which take full account of the role of carrier transverse motion, give rise to bulk NDC in the dc steady state conduction and provide a unified formulation to analyze the small-signal ac response in the space homogeneous case and the drift-relaxational modes under spatidy inhomogeneous condition.     

Balance-equation approach to impact ionization induced by an intense terahertz radiation: Application to InAs/AlSb heterojunctions

We have extended the balance equations to account for conduction-valence interband impact ionization (II) process induced by an intense terahertz (THz) electromagnetic irradiation in semiconductors, and applied them to study the II effect on electron transport and electron-hole pair generation-recombination rate in THz-driven InAs/AlSb heterojunctions (HJ). As many as needed multiphoton channels are self-consistently taken into account for yielding a given accuracy. The time evolution of transport state including THz-radiation-induced II process are monitored in details by an extensive time-dependent analysis. Two different physical stages, the quasi-steady state and the complete steady-state, are clearly identified from the present calculations. Intersubband electron transfer rate and net electron-hole generation rate are derived as functions of the THz radiation strength E _ac for various radiation frequencies from f _ac = 0.42 to 6 THz at lattice temperatures T = 6 K. It's indicated that the THz radiation with a larger E _ac or a lower f _ac, has a stronger effect on electron transport and II process. Qualitative agreement is obtained between the calculated electron-hole generation rate and the available experimental data for InAs/AlSb HJ's at T = 6 K. Received 24 May 2002 / Received in final form 26 August 2002 Published online 31 October 2002 RID="a" ID="a"e-mail: jccao8@hotmail.com     

Theory of parametric amplification in superlattices

We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. We show that Bragg reflections in miniband result in a parametric resonance which is detectable using ac probe field. We establish theoretical feasibility of phase-sensitive THz amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. This prevents a formation of destructive domains of high electric field inside the superlattice.     

Loss and gain in Bloch oscillating super-superlattices: THz Stark ladder spectroscopy

Bloch oscillation in electrically biased semiconductor superlattices offer broadband terahertz gain from DC up to the Bloch frequency or Stark splitting. Useful gain up to 2–3 THz can provide a basis for solid-state electronic oscillators operating at 10 times the frequency of existing devices.A major stumbling block is the inherent instability of the electrically biased doped superlattices to the formation of static or dynamic electric field domains. To circumvent this, we have fabricated super-superlattices in which a large superlattice is punctuated with heavily doped regions. The short superlattice sections have subcritical “nL” products.Room temperature, terahertz photon-assisted transport in short InGaAs/InAlAs superlattice cells allows us to determine the Stark ladder splitting as the superlattice is electrically biased and confirms the absence of electric field domains in short structures.Absorption of radiation from 1.5 to 2.5 THz by electrically biased InAs/AlSb super-superlattices exhibit a crossover from loss to gain as the Stark ladder is opened. Measurements are carried out at room temperature in a novel planar terahertz waveguide defined by photonic band gap sidewalls and loaded with an array of electrically biased super-superlattices. The frequency-dependent crossover voltage indicates 80% participation of the super-superlattice.     

Superlattice vertical transport with high-lying minibands

We examine the role of high-lying minibands in superlattice vertical transport using a nonparabolic balance-equation approach. We find that the inclusion of high-lying minibands results in a decrease of the electron temperature, a reduction of the peak drift velocity and a slow-down of the velocity-drop rate in the negative differential mobility (NDM) regime, in comparison with those predicted by a single miniband model. These effects become significant when the strength of the electric field gets close to or falls in the NDM regime.     

THz-field induced nonlinear transport and dc voltage generation in a semiconductor superlattice due to Bloch oscillations

We report on a theoretical analysis of terahertz (THz-) field induced nonlinear dynamics of electrons in a semiconductor superlattice that are capable to perform Bloch oscillations. Our results suggest that for a strong THz-field a dc voltage should be generated. We have analyzed the real-time dynamics using a balance equation approach to describe the electron transport in a superlattice miniband. Taking account of both Bloch oscillations of electrons in a superlattice miniband and dissipation, we studied the influence of a strong THz-field on currently available superlattices at room temperature. We found that a THz-field can lead to a negative conductance resulting in turn in a THz-field induced dc voltage, and that the voltage per superlattice period should show, for varying amplitue of the THz-field, a form of wisted plateaus with the middle points being with high precision equal to the photon energy divided by the electron charge. We show voltage to the finite voltage state, and that in the finite voltage state dynamic localization of the electrons in a miniband occurs.     

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field

Based on an improved energy dispersion relation, the terahertz field induced nonlinear transport of miniband electrons in a short period AlGaN/GaN superlattice is theoretically studied in this paper with a semiclassical theory. To a short period superlattice, it is not precise enough to calculate the energy dispersion relation by just using the nearest wells in tight binding method: the next to nearest wells should be considered. The results show that the electron drift velocity is 30% lower under a dc field but 10% higher under an ac field than the traditional simple cosine model obtained from the tight binding method. The influence of the terahertz field strength and frequency on the harmonic amplitude, phase and power efficiency is calculated. The relative power efficiency of the third harmonic reaches the peak value when the dc field strength equals about three times the critical field strength and the ac field strength equals about four times the critical field strength. These results show that the AlGaN/GaN superlattice is a promising candidate to convert radiation of frequency ω to radiation of frequency 3ω or even higher.     

Proposal of a Microwave-Driven Semiconductor Superlattice Oscillator for Generation of THz Radiation

We present the proposal of a microwave-driven semiconductor superlattice oscillator. We show that the interplay of a microwave pump field with a synchronous harmonic field can make a semiconductor superlattice to a gain medium for the harmonic field. Placing the superlattice in a resonator for the harmonic field allows the operation of an oscillator. The gain mechanism is based on Bloch oscillations of miniband electrons. The gain is mediated either by the interaction of the high-frequency field with the single electrons or with space charge domains or with both. The microwave-driven superlattice oscillator should be suitable for generation of coherent radiation up to several THz.     

Nonlinear Transport of Three-Dimensional Electron Gases Under the Influenceo f an Intense Terahertz Radiation

We present a detailed theoretical and numerical investigation on nonlinear transport of a model three-dimensional electron gas driven by an intense terahertz (THz) radiation at lattice temperature T = 10,77,300 K using the conventional and recently developed balanceequation approach. Ionized-impurity, acoustic-phonon and polar optical-phonon scatterings were taken into account for electrons in a single parabolic band. The heating of electrons and the suppression of the dc electron mobility by the irradiation of the intense THz field are predicted. We find that the dc average mobility of electrons peaks around a certain value of the amplitude of the ac field at low lattice temperature.     

Terahertz conductivity and possible BLOCH gain in semiconductor superlattices

We have investigated terahertz emission due to dynamical electron transport in wide-miniband GaAs/Al(0.3)Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy inherently measures the step-response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit to the THz gain for the samples studied here.     

Subterahertz superlattice parametric oscillator

We report a superlattice parametric oscillator (SPO), with a GaAs/AlAs superlattice as the active element. The SPO was pumped by a microwave field (power 4 mW) and produced third harmonic radiation at subterahertz frequencies (near 300 GHz; 0.1 mW). We attribute the parametric gain to the nonlinearity of the miniband transport.     

Quasiclassical Describing of the Bloch Oscillation in a Superlattice by Fokker-Planck Equation

A theoretical study of Bloch electron transport in a superlattice miniband driven by an electric field parallel to the growth axis is carried out, by Fokker-Planck equation (FPE) in momentum space with the averaged momentum relaxation time (γ) approximation. Steadystate drift-velocity/field characteristics exhibit the expected maximum followed by negative differential conductivity (NDC), and then followed by drift-velocity oscillation when γ or electric field is large. The oscillation frequency is an increasing function of γ, and when γ → ∞, the limit of the oscillation frequency is the Bloch frequency as expected.     

Wannier-Stark resonances under strong localization conditions in natural silicon-carbide superlattices

A detailed experimental investigation is made of the electronic transport under conditions of Wannier-Stark localization of carriers in a natural superlattice of hexagonal polytypes of silicon carbide. The 4H and 6H polytypes, which possess different superlattice and miniband spectrum parameters, are employed. Direct measurements of the electronic current versus the average electric field in the active region of the sample revealed a series of regions of negative differential conductivity in fields ranging from 500 to 2100 kV/cm. Analysis of the results shows that the observed current resonances are associated with the development of the Wannier-Stark quantization process and are due to conduction mechanisms such as hopping conduction, induced between the levels of a Wannier-Stark ladder by a resonant electron-phonon interaction, and the resonant interminiband tunneling from the first into the second miniband. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 2, 105–109 (25 July 1996)     

Terahertz radiation of Bloch oscillators excited by an electromagnetic field in lateral semiconductor superlattices

The action of a strong high-frequency electromagnetic field on a lateral semiconductor superlattice is considered based on the quasi-classical electron transport theory in the self-consistent wave formulation. The theory predicts that a lateral superlattice can emit terahertz radiation wave trains, which are associated with periodic excitation of Bloch oscillations in the superlattice arising because of the development of transient processes in it in a variable self-consistent electric field. The conditions necessary for observing Bloch oscillator radiation were found. The spectral composition of radiation transmitted through the superlattice and the energy efficiency of frequency multiplication related to Bloch oscillator excitation were calculated.