直接带隙Ge耦合双量子阱中的光吸收系数

在有效质量近似下,详细研究了直接带隙Ge/Ge Si耦合双量子阱中带间光跃迁吸收系数和阈值能量随量子阱结构参数的变化情况.结果表明:随着量子阱阱宽增大,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象.增强耦合量子阱间的耦合效应使得带间光吸收强度显著提升.此外,与非对称耦合量子阱相比,耦合效应对对称耦合量子阱中光吸收系数的影响更为显著.     

直接带隙Ge耦合双量子阱中的光吸收系数

在有效质量近似下,详细研究了直接带隙Ge/GeSi耦合双量子阱中带间光跃迁吸收系数和阈值能量随量子阱结构参数的变化情况。结果表明：随着量子阱阱宽增大,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象。增强耦合量子阱间的耦合效应使得带间光吸收强度显著提升。此外,与非对称耦合量子阱相比,耦合效应对对称耦合量子阱中光吸收系数的影响更为显著。     

Spinor-electron wave guided modes in coupled quantum wells structures by solving the Dirac equation

A quantum analysis based on the Dirac equation of the propagation of spinor-electron waves in coupled quantum wells, or equivalently coupled electron waveguides, is presented. The complete optical wave equations for Spin-Up (SU) and Spin-Down (SD) spinor-electron waves in these electron guides couplers are derived from the Dirac equation. The relativistic amplitudes and dispersion equations of the spinor-electron wave-guided modes in a planar quantum coupler formed by two coupled quantum wells, or equivalently by two coupled slab electron waveguides, are exactly derived. The main outcomes related to the spinor modal structure, such as the breaking of the non-relativistic degenerate spin states, the appearance of phase shifts associated with the spin polarization and so on, are shown.     

加偏置电场的双曲线量子阱中线性与三阶非线性光学吸收系数的计算

利用紧致密度矩阵近似方法,研究了加偏置电场双曲线量子阱中的线性与三阶非线性光学吸收系数. 得到了该系统中的线性与三阶非线性光学吸收系数的解析表达式.分析了势阱的形状、外加电场的大小以及入射光场的强度对吸收系数的影响规律. 文章以典型的AlxGa1－xAs/ GaAs双曲线量子阱为例作了数值计算.结果表明：随着势阱宽度的增加,系统的吸收系数将减小;随着外加电场的增加,系统的非对称性增加,系统的吸收系数将增加;随着外加光场强度的增加,系统的吸收系数将减小,并且当光强增加到一定值时会出现明显的饱和吸收现象,这一结论为进一步的实验研究提供了相应的理论依据.     

Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field

The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/ Ga_{1 − x}Al_xAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a function of the potential symmetry, size of the quantum well, and coupling parameter of the wells. In coupled double quantum wells we obtain a large Stark effect that can be used to fabricate tuneable photodetectors. We show that the effect of an applied electric field on the intersubband optical absorption is similar to changes in the dimensions of the structure. This behaviour in the intersubband optical absorption for different wells and barrier geometries can be used to study these systems in regions of interest, without the need for the growth of many different samples.     

Nonlinear intersubband optical absorption in semiparabolic quantum wells

The linear and third-order nonlinear optical absorptions in semiparabolic quantum wells are studied in detail. Analytic formulas for the linear and third-order nonlinear optical absorption coefficients are obtained using the compact density matrix approach. Based on this model, numerical results are presented for typical GaAs/AlGaAs semiparabolic quantum wells. The results show that the factors of the incident optical intensity and the semiparabolic confinement frequency have great influences on the total optical absorption coefficients.     

Spin-orbit interaction in coupled quantum wells

We theoretically investigate the spin-orbit interaction in GaAs/AlxGa1 x As coupled quantum wells. We consider the contribution of the interface-related Rashba term as well as the linear and cubic Dresselhaus terms to the spin splitting. For the coupled quantum wells which bear an inherent structure inversion asymmetry, the same probability density distribution of electrons in the two step quantum wells results in a large spin splitting from the interface term. If the widths of the two step quantum wells are different, the electron probability density in the wider step quantum well is considerably higher than that in the narrower one, resulting in the decrease of the spin splitting from the interface term. The results also show that the spin splitting of the coupled quantum well is not significantly larger than that of a step quantum well.     

非对称耦合量子阱Zn1-xCdxSe/ZnSe的二次谐波产生及其光学各向异性研究

采用反射式二次谐波产生方法对非对称Ⅱ-Ⅵ族耦合量子阱Zn1-xCdxSe/ZnSe的非线性光学特性进行了研究。与衬底相比,非对称量子阱在可见光波段的二次谐波信号增强一个量级以上。测量和比较了室温下量子阱样品与衬底样品的荧光光谱,研究了在入射光和反射光均为p偏振,以及入射光和反射光分别为s偏振和p偏振两种情况下,二次谐波强度随样品旋转方位角的变化关系,可见其有非常明显的二阶非线性一光学各向异性。     

非对称耦合量子阱的吸收非线性增强

基于V 形三能级模型运用密度矩阵方程推导了非对称耦合量子阱三阶光学非线性极化率. 具体分析了三阶吸收非线性效率（三阶光学非线性极化率与线性吸收系数之比）随阱间电子相干振荡频率的变化规律. 理论结果表明：三阶吸收非线性效率对阱间电子相干振荡频率相当敏感，当阱间电子相干振荡频率增大时三阶吸收非线性效率显著增强，而当阱间电子相干振荡频率为零时，这种非线性效率类似于单量子阱情况. 与单量子阱相比，对于已设计好的非对称耦合量子阱结构其突出特征表现在，其非线性吸收与色散特性可经由沿材料生长方向偏压进行控制. 据此，我们预期利用这种非对称耦合量子阱结构能设计成光通信中的光限幅器和可控克尔光开关.     

Optical properties of quasi-zero-dimensional magneto-excitons

We discuss the evolution of optical properties of semiconductor quantum wells, as the quasi-two-dimensional electronic states are further confined into quasi-zero dimensions by a perpendicular magnetic field. We show that confinement in all three directions strongly modifies both linear and nonlinear optical response. In particular, quasi-zero-dimensionality makes an ensemble of magneto-excitons a unique many-body system, distinct from higher-dimensional excitons and the one-component Coulomb system in the fractional quantum Hall regime or Wigner crystal.     

Excitons and magnetoexcitons in coupled quantum nanostructures: the role of a dirty environment

The effect of a random field caused by impurities, interface roughness and so on, on the optical properties and superfluidity of a quasi-two-dimensional system of excitons is studied. The influence of a random field on the density of the superfluid component of excitonic systems at low temperatures is investigated. For quasi-two-dimensional excitonic systems in a random field the Kosterlitz–Thouless temperature in the superfluid state is calculated. The superfluidity and Bose–Einstein condensation of indirect excitons in coupled quantum dots are studied. Magnetoexciton light absorption in the disordered quantum wells is considered. The two-particle problem of the magnetoexciton motion in the external field depending on the external magnetic field is reduced to the one-particle motion with effective magnetic mass in some effective field. The energy and optical absorption of the magnetoexciton in a single and coupled quantum dots are studied using the effective-magnetic-mass Hamiltonian. In the coherent potential approximation the coefficient of magnetoexciton optical absorption in single and coupled quantum wells is calculated. In the strong magnetic fields the exciton peak decreases with magnetic field increasing in accordance with the experimental data. The localization of direct and indirect magnetoexcitons is investigated. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Possible implementation of CNOT and CCNOT gates

The quantum optical gate CCNOT based on five level atomic scheme is discussed. The qubits are encoded in polarization properties of three optical beams. The nonlinear cross Kerr effect is used for getting nonlinear phase shifts in these beams. A way of CNOT implementation using coupled double quantum wells is suggested. The device is described in the framework of the model based on the operator extensions theory.     

Nonlocal optical properties in AlGaAs/GaAs coupled quantum well nanostructures

Nonlocal intersubband optical absorption properties in AlGaAs/GaAs coupled quantum well (CQW) nanostructures are investigated for a p-polarized light in the case of taking spatial nonlocality of optical response into account. The numerical results show that the spatial nonlocality of optical response can lead optical spectrum lines to have a radiation shift due to the nonlocal effects, and the spatial nonlocality is associated closely with the coupling effects between the potential wells of the CQW system. The dependence of the radiation shift on structure parameters of the CQW is clarified. It is also demonstrated that the maximal radiation shift and the least optical absorbance can be obtained by optimizing structure parameters of the CQW. These results may be constructive in designing nanomaterials with various nonlocality and observing the spatial nonlocal effects in experiment.     

(CdSe)1(ZnSe)3/ZnSe短周期超晶格多量子阱的共振Ramam谱

在(CdSe)₁(ZnSe)₃/ZnSe短周期超晶格多量子阱中,根据一维线性链模型计算的结果与实验结果的比较表明,我们在不同的共振条件下分别观察到了来自多量子阱的阱中和垒中ZnSe限制纵光学声子模的Raman散射。与GaAs/AlAs量子阱的偏振选择定则不同,在共振条件下,我们在两种偏振配置下都观察到了阱中ZnSe限制模LO₁,并认为这种不同可能来源于样品特殊的电子子带结构和光学声子行为。 关键词：     

Linear and nonlinear intersubband optical absorption in symmetric double semi-parabolic quantum wells

The linear and the nonlinear intersubband optical absorption in the symmetric double semi-parabolic quantum wells are investigated for typical GaAs/AlxGa1−xAs. Energy eigenvalues and eigenfunctions of an electron confined in finite potential double quantum wells are calculated by numerical methods from Schrödinger equation. Optical properties are obtained using the compact density matrix approach. In this work, the effects of the barrier width, the well width and the incident optical intensity on the optical properties of the symmetric double semi-parabolic quantum wells are investigated. Our results show that not only optical incident intensity but also structure parameters such as the barrier and the well width really affect the optical characteristics of these structures.     

极化子效应对非对称量子阱中光吸收系数的影响(英文)

从理论上研究子电子-声子相互作用对Morse量子阱中光吸收系数的影响,首先利用微扰论方法求出考虑极化子效应时的电子波函数和能级,然后利用密度矩阵和迭代法得到光吸收系数的解析表达式,最后以典型的GaAs/AlGaAs Morse量子阱为例进行数值计算。结果表明,极化子效应使光吸收系数比仅考虑电子的情况增大了,并且在相同光强的情况下吸收饱和现象更明显;极化子效应的影响随着阱的非对称性的增强而增大;电声相互作用对电子能级的修正导致光吸收系数峰值向高能方向偏移。     

非对称耦合量子阱ZnCdSe/ZnSe的荧光光谱与拉曼散射谱

本文研究了非对称Ⅱ -Ⅳ族耦合多量子阱Zn1-xCdxSe/ZnSe的荧光光谱和拉曼散射谱特性。实验中观察到了比较明显的量子阱荧光峰 ;在拉曼散射谱中观察到了分别对应于与ZnCdSe窄阱和宽阱的一级限制光学模LOL 和LOW 及对应于ZnSe/GaAs界面的声子和等离子体的耦合模 ,并对它们进行了简单分析。     

Intersubband optical absorption in two-level quantum wells embedded in a planar microcavity

A theoretical analysis of the optical absorption including both the linear and third-order non-linearity arising from intersubband transitions in two-level quantum wells, which are embedded in a planar microcavity, has been performed. Starting from the Maxwell–Lorentz equations, the expressions of the field in each layer are explicitly given, and the field in the quantum wells is determined via an integral equation, in which the third-order non-linearity is included. Then, by matching the boundary conditions, the field in the quantum-well microcavity structure is rigorously determined, and the absorption coefficient is thus obtained. Detailed numerical calculations show that the optical intersubband absorption can be significantly modified due to the coupling between the quantum wells and the microcavity. This revised version was published online in November 2006 with corrections to the Cover Date.     

Specific features of the hybridization of Frenkel and Wannier–Mott excitons in a microcavity

Polariton states have been investigated in a microcavity, where the energy of the Frenkel exciton in an organic quantum well and the energy of the semiconductor Wannier–Mott exciton in an inorganic quantum well are close to the microcavity optical mode. It has been shown that the interaction of each of these excitons with the microcavity optical mode leads to their interaction with each other and to the formation of mutually coupled hybrid excitations. The influence of the location of the quantum wells in a microcavity on the spectra of hybrid states with different polarizations has been analyzed.     

Vanishing and emerging of absorption quantum beats from electron spin coherence in GaAs quantum wells

We report experimental studies of absorption quantum beats induced by electron spin coherence in GaAs quantum wells. Absorption quantum beats occur for strongly localized excitons, but nearly vanish for mobile excitons in the third order nonlinear optical response. Pronounced quantum beats for mobile excitons emerge in an unusual fifth order process. These results, along with a qualitative analysis based on the use of N-exciton eigenstates, elucidate how the manifestation of electron spin coherence in the excitonic nonlinear optical response can differ fundamentally from that in an atomic system.