Effects of acetoin as chelating agent on the preparation of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films from non-hydrolyzing precursors

Ferroelectric thin films of strontium bismuth tantalate (SBT) have been fabricated by a chemical solution deposition technique using non-hydrolyzing precursors. Strontium acetate, bismuth nitrate and tantalum ethoxide were used as precursor materials, with methanol and glacial acetic as solvents. We investigate the effects of the precursor chemistry, by the selection of the chelating agent, on the elimination of residual organic compounds, thermal evolution of phase formation, and microstructure evolution of derived films. We found that the utilization of alkanolamines as chelating agent produce the segregation of metallic bismuth in as-prepared powders. On the other hand, acetoin, one of the hydroxyketones, showed the elimination of residual organics at low temperature, an earlier onset of crystallization, and no segregation of secondary phases during the whole crystallization process. A comparative investigation of the surface microstructure, grain size distribution, crystallinity, and degree of crystal orientation of films fabricated with the different chelating agents is presented. The dielectric and ferroelectric properties of films prepared with acetoin are investigated.     

Electrochemical deposition of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> for thermoelectric microdevices

The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3–4:3 lead to cathodic deposits of films of bismuth telluride (Bi₂Te₃), an n-type semiconductor. Current densities of 2–5 mA/cm² were applied. Voltammetric investigations showed that Bi₂Te₃ deposition occurred at potentials more negative than −0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (γ-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.     

Ion-beam analysis of CuInSe<Subscript>2</Subscript> solar cells deposited on polyimide foil

CuInSe₂ (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration–depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber.     

Chemical modifications of Pb(Zr<Subscript>0.3</Subscript>,Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> precursor solutions and their influence on the morphological and electrical properties of the resulting thin films

Tetragonal lead zirconate titanate thin films on platinized silicon wafers have been prepared from chemically different precursor solutions by chemical solution deposition. Literature known routes have been evaluated and an optimized standard process has been developed leading to Pb(Zr_0.3,Ti_0.7)O₃ films with a high degree of (111) orientation which consequently shows square hysteris loops with Pr values of 34 μC/cm². Other solvents, different alkoxides of the transition metals, and different carboxylates of lead have been systematically introduced in this standard process and their influence on the final morphological and electrical properties has been studied. It has been found that the use of lead (II) propionate and titanium tetra n-butoxide for solution synthesis leads to a decrease of the remanent polarization of ∼50%. Furthermore the reaction atmosphere after spinning and during the pyrolysis has been investigated. Increased ambient humidity after the spin coating process also caused a significant deterioration of the final film properties. The findings have been explained in terms of a hindered formation of the (111) texture promoting intermediate Pt _x Pb phase.     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Time-resolved electrochromic properties of MoO<Subscript>3</Subscript> thin films electrodeposited on a flexible substrate

In this paper, a MoO₃ thin film was firstly electrodeposited on flexible ITO/PET substrates. Its electrochromic properties were examined using an electrochemical workstation coupled in situ with a charge-coupled device (CCD) spectrophotometer. The film was characterized by XRD and AFM. The electrodeposited MoO₃ thin film on the ITO/PET substrate showed a large transmittance contrast between the colored and bleached states, a quick response, and good durability and reversibility. The low working potential range, –0.5 to 1.6 V (vs. Ag/AgCl), for the MoO₃/ITO/PET film prepared in this work makes it a good candidate for flexible smart windows, as well as other plastic electrochromic devices. Electronic Publication     

Electrodeposition of CuInSe<Subscript>2</Subscript> films onto a molybdenum electrode

Joint reduction of Cu(II), Se(IV), and In(III) ions at a molybdenum electrode from a solution based of sulfosalicylic acid solution was studied. The optimal range of potentials for deposition of the CuInSe₂ compound was chosen. The composition of the films obtained was confirmed by X-ray phase and electron microprobe analyses.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO<Subscript>2</Subscript> substrates

Structural changes at annealing temperatures (T_an) of 500–1,100°C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal -Ta, whereby the [001] texture is independent of the substrate material. At lower annealing temperatures, the microstructural evolution is essentially the same for both Ta films. Incorporation of O atoms causes an increase of the intrinsic compressive stress, and diffusion of C atoms into the Ta layer leads to the formation of Ta₂C. Additionally, a partial transformation of the original -Ta phase into a second phase with tetragonal unit cell (denoted as -Ta) occurs. For the Ta/Si system, the formation of a Ta–Si intermixing layer is initiated at T_an=550°C, and nucleation of crystalline TaSi₂ occurs at T_an=620°C. The formation of a second Ta silicide was not detected up to T_an=900°C. In the case of the Ta film deposited onto the SiO₂ substrate, the metastable -Ta and the -Ta transform completely into the thermodynamically stable cubic -Ta at T_an=750°C. A marked reaction with the substrate indicated by the formation of Ta₂O₅ and Ta₅Si₃ occurs at T_an=1,000°C.     

Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte

Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO₂) coated glass substrates from a sulfamatic solution containing Na₂MoO₄ and H₂SeO₃ under potentiostatic conditions. The deposition potential varied from –0.6 V to –0.9 V, at a deposition temperature of 20–40 °C and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO₂ and MoSe₂. The lattice parameters of the as-deposited MoSe₂ are a=b=3.2340 Å and c=13.2859 Å, which fits a hexagonal structure.     

Preparation and characterization of poly(phthalazinone ether ketone)/SiO<Subscript>2</Subscript> hybrid composite thin films with low friction coefficient

Organic–inorganic poly(phthalazinone ether ketone) (PPEK)/SiO₂ hybrid composite thin films were prepared by the dip-coating method on pre-cleaned glass substrates. The covalent bonds between organic and inorganic phases were introduced by an in-situ O-acylation reaction of isocyanatopropyltriethoxysilane (ICPTES) with the borohydride-reduced PPEK forming a polymer bearing triethoxysilyl groups. Theses groups were subsequently hydrolyzed with tetraethoxysilane (TEOS) and allowed to form a network via a sol–gel process. The polymer hybrid composite exhibited good thermal stability and a higher glass transition temperature as compared with the pure resin. Atomic force microscope, water contact angle measurement and scanning electron microscope were used to characterize the polymer hybrid thin films. The tribological experiment showed that the films have very low friction coefficient (about 0.1) and good anti-wear properties, without failure even after sliding for 18,000 s under modest loads. The improved tribological properties of the modified substrate were attributed to good adherence of PPEK/SiO₂ hybrid films on the substrate and synergy of both PPEK matrix and silica particles.     

Characterization of nanocrystalline anatase TiO<Subscript>2</Subscript> thin films

Nanoporous thin films were deposited onto glass substrates by painting with a solution of nanocrystalline anatase TiO(2) particles (with a size of either 6 nm or 16 nm) suspended in an organic solvent. Upon drying in air for about 1 day, the films were tempered at 450 degrees C in air for 1 h. This procedure results in stoichiometric TiO(2) films with a thickness of several micro m and a milky whitish appearance. Scanning force microscopy of the surface revealed that the nanoparticles of the films agglomerated into structures with lateral dimensions of some 100 nm. Transmission electron microscopy was utilized to investigate the structural arrangement of the crystallites in the films. High-resolution electron diffraction and X-ray diffraction analyses demonstrated, furthermore, that the material consists exclusively of a single TiO(2) phase, namely anatase, and that the films do not exhibit any preferential texture. The elemental stoichiometry and the possible presence of impurities were monitored throughout the films by means of secondary-ion mass spectrometry depth profiling. Electrical measurements have been carried out as a function of both the sample temperature T and the ambient oxygen partial pressure p(O(2)). From these data the electrical conductivity sigma of the porous films was determined in dependence of those parameters.     

Photoelectrochemical study of electrodeposited TiO<Subscript>2</Subscript> thin films onto F:SnO<Subscript>2</Subscript> substrates

TiO₂ thin films have been effectively fused onto F:SnO₂ (FTO) substrates via the electrodeposition method. The influence of deposition temperature on the synthesis of F:SnO₂ substrates and relative information of as-deposited and annealed TiO₂ thin films have been studied. Novel TiO₂ microspheres are detected on F:SnO₂ substrates at an optimized electrodeposition potential. Raman bands approve the creation of single-anatase-phase TiO₂. The optimized deposition surroundings show a decrease in the band gap of F:SnO₂ substrates and TiO₂ thin films. The determined photoelectrochemical properties of annealed TiO₂ thin films indicate a fill factor of 51% and power conversion efficiency of 0.15% for application in solar cells.     

Photocatalytic properties of mesoporous TiO<Subscript>2</Subscript>/ZrO<Subscript>2</Subscript> films in gas-phase oxidation of alcohols

We have used the sol-gel template synthesis method to obtain mesoporous zirconium-containing titanium dioxide films and have studied their structural and sorption characteristics, surface acid function, and photocatalytic activity during gas-phase oxidation of aliphatic alcohols. We have shown that the zirconium content changes the acidity and specific surface area of the films, determining the rate at which the studied processes occur and the relative yield of reaction products. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 41, No. 6, pp. 354–359, November–December, 2005.     

Deposition of Prussian blue on nanoporous gold film electrode and its electrocatalytic reduction of H<Subscript>2</Subscript>O<Subscript>2</Subscript>

Prussian blue-modified nanoporous gold film (PB-NPGF) electrode was fabricated in this study. The fabrication was realized through electrodeposition of Prussian blue nanoparticles on the skeleton of a nanoporous gold film electrode without destroying the porous structure of NPGF electrode. The resulting PB-NPGF composite electrode showed very high electrocatalytic activity, repeatability, and stability to the reduction of H₂O₂. For instance, its activity was about twenty times that of the PB-modified polished gold electrode. More importantly, the sensitivity of the PB-NPGF composite electrode reaches as high as 10.6 μA μM⁻¹ cm⁻². This PB-NPGF composite electrode is very promising in the fields of catalysis, analysis, and so on.     

Effect of H<Subscript>2</Subscript>SeO<Subscript>3</Subscript> on the early stages of nucleation and growth during Cu electrocrystallization in acidic medium on glassy carbon electrode

The early stages of Cu electrodeposition onto a GC electrode were investigated in 0.5 M H₂SO₄ + 0.01 M CuSO₄ solution without or with H₂SeO₃ when a molar concentration ratio [Cu(II)]/[Se(IV)] was 1.10⁴ to 2.10². The H₂SeO₃ solution in 0.5 M H₂SO₄ was also used. The electrochemical techniques such as cyclic voltammetry and chronoamperometry and structural investigation using ex situ AFM were applied to study the nucleation and growth of Cu onto a GC electrode. Chronoamperometric results were shown to follow an instantaneous 3D nucleation and diffusion-controlled growth model by Scharifker and Hills. The values of number of Cu nuclei N and average nuclei radius r _av were calculated. It was shown that, in the presence of H₂SeO₃ in amounts of 0.001 to 0.005 mM, N increases and r _av decreases. At higher concentrations of the additive, the changes of these parameters with the deposition potential E _dep were shown to be somewhat more complex. The dependences of N and r _av on the concentration of H₂SeO₃ in different regions of Cu overpotentials were also revealed.     

Inkjet printing of Ce<Subscript>0.8</Subscript>Gd<Subscript>0.2</Subscript>O<Subscript>2</Subscript> thin films on Ni-5%W flexible substrates

The successful inkjet printing of a cerium gadolinium oxide (Ce_0.8Gd_0.2O₂) precursor solution on highly textured Ni-5%W is reported. A stable ink was synthesised from metal acetates and propionic acid with rheological properties suitable for inkjet printing and also the development of solid–liquid interface comparable with thin film formation by dip coating. Two different drop-on-demand print heads were used for deposition: a 16-nozzle piezoelectric cartridge and a single electromagnetic nozzle. Two different rastering patterns with different droplet sizes and spacing were compared. Thermogravimetry and X-ray diffractometry were used to study the thermal decomposition of the metal oxide precursors and to determine the shortest possible heat treatment of the deposited layers, potentially suitable for continuous large scale production. The results from X-ray diffraction show that the single phase Ce_0.8Gd_0.2O₂ was obtained in all cases, but only piezoelectric inkjet printing with optimised drop overlapping produces a highly textured buffer layer. Optical micrographs and atomic force microscopy also indicate the good quality of deposited films after heat treatment.     

Electrodeposition of thin Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films

The electrochemical behavior of copper(II), zinc(II), and thiosulfate (S₂O₃ ^2-) ions on the molybdenum electrode in individual 0.2 М sodium sulfate solutions (рН 6.7) and with addition of either 0.1 М tartaric acid (рН 4.6) or 0.1 М citric acid (рН 4.7) is studied. A one-step electrochemical method is developed for the deposition of thin Cu₂ZnSnS₄ films, which is carried out on the molybdenum electrode at a constant potential in sodium sulfate solutions containing tartaric acid. The effect of the concentration of electrolyte components on the chemical composition of Cu₂ZnSnS₄ films is determined. The phase composition is confirmed by the Raman spectroscopy data. The surface morphology of synthesized films is studied by means of scanning-electron and atomic-force microscopes. The photoelectrochemical characteristics of Cu₂ZnSnS₄ films are determined. Samples of these coatings on the Mo electrode are found to be highly photosensitive.