V:YAG – a new passive Q-switch for diode-pumped solid-state lasers

gsa =3.0×10^-18 cm² and σ_esa=1.4×10^-19 cm² at 1064 nm, and σ_gsa=7.2×10^-18 cm² and σ_esa=7.4×10^-19 cm² at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO₄ microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W. Received: 17 March 1998/Revised version: 8 June 1998     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

State selective step-wise photoionization of NO with mass spectroscopic ion detection

State and isotope selective two-step photoionization of NO with mass spectroscopic ion detection has been demonstrated and investigated. Using saturation condition the photoionization cross section for a single rotational level of the intermediate state, No(A ²Σ⁺, ν′=0), has been measured: σ_i=(7.0±0.9) X 10⁻¹⁹ cm². The charge transfer¹⁵NO⁺+¹⁴NO→¹⁵NO+¹⁴NO⁺ has been observed and investigated, yielding a cross section of the order of 13×10⁻¹⁶ cm², consistent with recent measurements at about 1 eV.     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Off-axis continuous-wave cavity-enhanced absorption spectroscopy of narrow-band and broadband absorbers using red diode lasers

We present an application of continuous-wave (cw) cavity-enhanced absorption spectroscopy (CEAS) with off-axis alignment geometry of the cavity and with time integration of the cavity output intensity for detection of narrow-band and broadband absorbers using single-mode red diode lasers at λ=687.1 nm and λ=662 nm, respectively. Off-axis cw CEAS was applied to kinetic studies of the nitrate radical using a broadband absorption line at λ=662 nm. A rate constant for the reaction between the nitrate radical and E-but-2-eneof (3.78±0.17)×10^-13 cm³ molecule^-1 s^-1 was measured using a discharge-flow system. A nitrate-radical noise-equivalent (1σ≡ root-mean-square variation of the signal) detection sensitivity of 5.5×10⁹ molecule cm^-3 was achieved in a flow tube with a diameter of 4 cm and for a mirror reflectivity of ∼99.9% and a lock-in amplifier time constant of 3 s. In this case, a noise-equivalent fractional absorption per one optical pass of 1.6×10^-6 was demonstrated at a detection bandwidth of 1 Hz. A wavelength-modulation technique (modulation frequency of 10 kHz) in conjunction with off-axis cw CEAS has also been used for recording 1f- and 2f-harmonic spectra of the ^RR(15) absorption of the b¹Σ_g ⁺-X³Σ_g ^- (1,0) band of molecular oxygen at =14553.947 cm^-1. Noise-equivalent fractional absorptions per one optical pass of 1.35×10^-5, 6.9×10^-7 and 1.9×10^-6 were obtained for direct detection of the time-integrated cavity output intensity, 1f- and 2f-harmonic detection, respectively, with a mirror reflectivity of ∼99.8%, a cavity length of 0.22 m and a detection bandwidth of 1 Hz. Received: 24 June 2002 / Revised version: 12 August 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1865/275410, E-mail: vlk@physchem.ox.ac.uk     

One-dimensional ionic conduction in solid Ag2 Tl6I10

The ionic and electronic conductivities of Ag₂Tl₆I₁₀ single crystals have been studied as a function of crystallographic orientation and temperature from 20 to 135°C. EMF as well as AC and DC techniques have been employed. The highly anisotropic material is predominantly an Ag⁺-ion conductor parallel toc-direction, with the Ag⁺ ions moving through linear channels that are not interconnected. The conductivity σ_‖c =1.6×10⁻⁷Ω⁻¹cm⁻¹ at 25°C, with an activation enthalpy for σ_‖c of 0.38 eV. The conduction perpendicular toc-direction has been found to be predominantly electronic with a value of σ_⊥c =3×10⁻⁹Ω⁻¹cm⁻¹ at 25°C and an activation enthalpy for σ_⊥c of 0.64 eV. This is the first observation of one-dimensional Ag⁺ conduction and this type of orientation-dependent change from ionic to electronic conduction. On leave from Institute of Physics, Academia Sinica, Peking, China.     

Anisotropy of nonlinear absorption in Co<Superscript>2+</Superscript>:MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystal

Anisotropy of the nonlinear absorption of Co²⁺ ions in MgAl₂O₄ single crystal at the wavelengths of 1.35 and 1.54 μm has been experimentally demonstrated. The experimental data are analyzed in the framework of a phenomenological model when the Co²⁺ ions are described as three sets of linear dipoles oriented along the crystallographic axes. Ground-state and excited state absorption cross-sections at 1.35 and 1.54 μm are evaluated to be σ_gsa=(4.0±0.3)×10^-19, σ_esa=(3.6±0.4)×10^-20 cm² and σ_gsa=(5.1±0.3)×10^-19, σ_esa=(4.6±0.4)×10^-20 cm², respectively. PACS 42.55.Rz; 71.20.Be     

Cavity-enhanced absorption: detection of nitrogen dioxide and iodine monoxide using a violet laser diode

We present an application of cavity-enhanced absorption spectroscopy with an off-axis alignment of the cavity formed by two spherical mirrors and with time integration of the cavity-output intensity for detection of nitrogen dioxide (NO₂) and iodine monoxide (IO) radicals using a violet laser diode at λ=404.278 nm. A noise-equivalent (1σ≡ root-mean-square variation of the signal) fractional absorption for one optical pass of 4.5×10^-8 was demonstrated with a mirror reflectivity of ∼0.99925, a cavity length of 0.22 m and a lock-in-amplifier time constant of 3 s. Noise-equivalent detection sensitivities towards nitrogen dioxide of 1.8×10¹⁰ molecule cm^-3 and towards the IO radical of 3.3×10⁹ molecule cm^-3 were achieved in flow tubes with an inner diameter of 4 cm for a lock-in-amplifier time constant of 3 s. Alkyl peroxy radicals were detected using chemical titration with excess nitric oxide (RO₂+NO→RO+NO₂). Measurement of oxygen-atom concentrations was accomplished by determining the depletion of NO₂ in the reaction NO₂+O→NO+O₂. Noise-equivalent concentrations of alkyl peroxy radicals and oxygen atoms were 3×10¹⁰ molecule cm^-3 in the discharge-flow-tube experiments. Received: 4 February 2003 / Revised version: 10 March 2003 / Published online: 12 May 2003 RID="*" ID="*"Corresponding author. Fax: +44-1865/275-410, E-mail: vlk@physchem.ox.ac.uk     

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence (EL) quenching in Ge-implanted ITO-SiO₂-Si light-emitting silicon diodes. Good correlation between the negative charge capture in traps of small effective capture cross-sections (σ_t1 ^e=1.7×10^-19 cm² and σ_t2 ^e=4.8×10^-20 cm²) located in SiO₂, and the quenching of the asymmetrical EL line with a maximum intensity at 400 nm has been observed. Similar correlation between the electron capture in traps with extremely small effective capture cross-section (σ_t3 ^e=5×10^-21 cm²) and the quenching of the EL line at 637 nm has been established. A quantitative model for the EL quenching has been developed, which takes into account the modification of the luminescent centers with subsequent electron capture at the newly generated traps. The model shows good agreement between simulation and experimental data. It also demonstrates that small effective capture cross-sections for electron charging during the EL quenching are determined by the probability of the luminescence centers (LCs) being disrupted, and enables one to estimate the Ge concentration associated with the EL at 400 nm. PACS 72.20.Jv; 73.40.Qv; 73.50.Gr     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Growth,spectroscopic and laser properties of Yb<Superscript>3<Emphasis Type="Bold">+</Emphasis></Superscript>-doped GdAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal: a candidate for infrared laser crystal

Yb³⁺:GdAl₃(BO₃)₄ (hereafter Yb³⁺:GAB) crystals with large sizes and good optical quality have been grown by the top-seed solution growth (TSSG) method. The polarized absorption and emission spectra have been investigated at room temperature. For the σ-polarization, the intensities of both absorption and emission spectra are stronger than those for the π-polarization, the σ-absorption cross section of Yb³⁺ in GAB being 3.43×10^-20 cm² at 977 nm, and the σ-emission cross section being 0.98×10^-20 cm² at 1045 nm. The fluorescence lifetime of the ² F _5/2→² F _7/2 transition was measured to be 800 μs in the 5% doped sample used for our laser experiments, 993 μs in a 10% doped sample and 569 μs in a 0.5% doped sample. The laser parameters were estimated as: β_min=0.022, I_sat=10.4 kW/cm² and I_min=0.23 kW/cm². About 0.4 W laseroutput at the wavelength of 1043 nm was achieved when the Yb³⁺:GAB crystal was pumped by a 974 nm laser diode, with 27.4% slope efficiency. PACS 42.55.-f; 42.70.Hj; 78.20.-e; 81.10.Dn     

Nonlinear optical properties of a new two-photon-absorption organic dye: HEASPS

Trans-4-[p-(N-hydroxyethyl-N-ethylamino)styryl]-N-methylpyridinium p-toluene sulfonate (abbreviated as HEASPS) is a two-photon-absorption (TPA) dye newly synthesized by our research group. It possesses a much larger TPA cross-section and much stronger upconversion fluorescence emission than those of common organic dyes (such as rhodamine) when excited with near-infrared (IR) radiation. TPA spectrum and upconversion efficiency spectrum of HEASPS solution at different wavelengths have been measured. The largest molecular TPA cross-section σ₂ ^′ is measured to be 2.06×10^-47 cm⁴ s/photon at 930 nm. At 1064 nm, σ₂ ^′ is 2.71×10^-48 cm⁴ s/photon, which is only one-ninth of that at 930 nm. The upconverted lasing efficiency spectrum has been measured at different wavelengths. The highest efficiency is 5.1% at 1020 nm, whereas it is 3.5% at 1064 nm. Its optical-power-limiting properties at 930 nm have also been illustrated. Received: 30 November 2000 / Published online: 27 April 2001     

New analysis of the Douglas-Herzberg system (A1Π- X1Σ+) in the CH+ ion radical

Three bands of the A¹Π- X¹Σ⁺ system in the ¹²CH⁺ ion radical have been rephotographed under high resolution as an emission spectra using a Geissler-type discharge tube. The conventional technique of spectroscopy has been implemented. Using the Th lines as a standards, as well as an interferometric comparator equipped with a photoelectric scanning device, the 0-0 , 0-1 and 2-1 bands have been reanalyzed. By means of much longer bands (J_max = 17 in the Q(J) branch of the 0-0 band; J_max = 16 in the R(J) branch of the 0-1 band; J_max = 14 in the P(J) and Q(J) branches of the 2-1 band), than have been observed so far, as well as the merged calculations, using another five bands given by Carrington et al. [A. Carrington, D.A. Ramsay, Phys. Scripta 25, 272 (1982)] additionally, more accurate molecular constants for the X¹Σ⁺ state, the improved reduced band system origin T_e = 24118.726 (14) cm^-1 as well as for the first time the equilibrium molecular constants with their one standard deviation for the A¹Π state in the CH⁺ molecule have been computed: ω_e'=1864.402(22), ω_ex_e'=115.832(14), ω_ey_e'= 2.6301(24), B_e'=11.88677(72), α_e'= 0.9163(18), γ_e'= -2.29(12)×10^-2, ε_e'= 4.95(20)×10^-3, D_e'=1.92960(31)×10^-3, β_e'= 1.0733(50)×10^-4, δ_e'= -1.312(16)×10^-5, , α_qe'= -3.14(16)×10^-3, and q_De'= -2.20(14)×10^-5 cm^-1. Only in our research the addition to the zero-point energy Y'₀₀=-1.9430 cm^-1 and cm^-1 have been calculated. The equilibrium bond lengths of r'_e=1.235053(37) ? and ? for the A¹Π and X¹Σ⁺ states, respectively have been computed. Full quantum-mechanics characteristic of the A-X bands system in the ¹²CH⁺ molecule, i.e. RKR turning points, the Franck-Condon factors and r-centroids have been obtained. Dissociation energies D_e^{X1 Σ+}=(38470± 3503) cm^-1 and D_e^{A1 Π}= (14415 ±3509) cm^-1 for the molecule under consideration have been estimated.     

Wavelength-modulation spectroscopy using a frequency-doubled current-modulated diode laser

We have studied atomic absorption in an argon discharge by wavelength-modulation spectroscopy with a frequency-doubled diode laser. The tunable wavelength-modulated radiation at 430 nm was generated by frequency doubling a current-modulated 860-nm diode laser in a KNbO₃ crystal. 2f-, 4f- and 6f-harmonic spectra as a function of diode laser modulation depth were measured on a Doppler-broadened sample of excited argon atoms produced in a capacitively coupled plasma chamber. Characterisation of the harmonic signals was accomplished. Minimum detectable absorbances of 7.7×10^-5 and 1.9×10^-4 based on a 3σ criterion (σ being the standard deviation of the noise) were estimated for 2f- and 4f-harmonic detection of the frequency-doubled radiation with a time constant of 0.1 s. The concentrations of argon in the 1s₄ state were found to be in the range of 3×10⁸ to 1.2×10¹¹ cm^-3 for the experimental conditions studied. Received: 25 February 2002 / Revised version: 4 April 2002 / Published online: 14 May 2002     

Plasma-based nitrogen tail pulse shutter for CO2-TEA lidar dial systems

This paper presents the construction, use and characterisation of a laser-induced sealed plasma shutter to clip off the nitrogen pulse tail of a CO₂-TEA laser-based lidar dial system. Investigation of the optimum gas filling pressure, temporal profile of the clipped pulse, and the laser threshold power intensities to achieve ionisation growth and breakdown in helium, argon, and nitrogen are also presented. Values of these power density thresholds lie between 3×10¹¹ W cm^-2–5×10¹² W cm^-2, 2×10¹¹ W cm^-2–2×10¹² W cm^-2 and 3×10¹³ W cm^-2–2×10¹⁴ W cm^-2 for helium, argon, and nitrogen, respectively. The range resolution attainable with the present clipped pulses is 15 m, which is 30 times better than that readily obtained with the nitrogen-tailed pulses. Field measurements of the lidar returns with the clipped pulse from a co-operative target are presented. Received: 27 December 1999 / Revised version: 11 February 2000 / Published online: 27 April 2000     

Crystalline structure and optical spectroscopy of Er3+-doped KGd(WO4)2 single crystals

4 )₂ single crystals doped with Er³⁺ have been grown by the flux top-seeded-solution growth method. The crystallographic structure of the lattice has been refined, being the lattice constants a=10.652(4), b=10.374(6), c=7.582(2) Å, β=130.80(2)°. The refractive index dispersion of the host has been measured in the 350–1500 nm range. The optical absorption and photoluminescence properties of Er³⁺ have been characterised in the 5–300 K temperature range. At 5 K, the absorption and emission bands show the (2J+1)/2 multiplet splittings expected for the C₂ symmetry site of Er in the Gd site. The energy positions and halfwidths of the 72 sublevels observed have been tabulated as well as the cross sections of the different multiplets. Six emission band sets have been observed under excitation of the ⁴F_7/2 multiplet. The Judd–Ofelt (JO) parameters of Er³⁺ in KGW have been calculated: Ω₂=8.90×10^-20 cm², Ω₄=0.96×10^-20 cm², Ω₆=0.82×10^-20 cm². Lifetimes of the ⁴S_3/2, ⁴F_9/2, and ⁴I_11/2 multiplets have been measured in the 5–300 K range of temperature and compared with those calculated from the JO theory. A reduction of the ⁴S_3/2 and ⁴I_11/2 measured lifetimes with increasing erbium concentration has been observed, moreover the presence of multiphonon non-radiative processes is inferred from the temperature dependence of the lifetimes. Received: 15 December 1997/Revised version: 10 July 1998     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Three-body decay of a rubidium Bose–Einstein condensate

We have measured the three-body decay of a Bose–Einstein condensate of rubidium (⁸⁷Rb) atoms prepared in the doubly polarized ground state F=m _F =2. Our data are taken for a peak atomic density in the condensate varying between 2×10¹⁴ cm^-3 at initial time and 7×10¹³ cm^-3, 16 s later. Taking into account the influence of the uncondensed atoms on the decay of the condensate, we deduce a rate constant for condensed atoms L=1.8 (±0.5) ×10^-29 cm⁶ s^-1. For these densities we did not find a significant contribution of two-body processes such as spin dipole relaxation. Received: 24 November 1998 / Revised version: 26 June 1999 / Published online: 8 September 1999