稀土配合物Tb（Sal）3·3H2O纳米微晶的制备及发光性质

利用化学沉淀法制备了不同粒径的Tb（Sal）3·3H2O纳米微晶和Tb（sal）3·2H2O稀土配合物。利用元素分析、红外光谱、热重分析和透射电镜表征了纳米微晶和稀土配合物的结构、热性质和粒径大小。利用荧光激发和发射光谱、紫外光谱探讨了有机配体和中心离子之间的能量传递过程。结果显示Tb（Sal）,·3H2O纳米微晶的粒径主要分布在50～250nm区域并且发出较强铽（Ⅲ）离子的特征荧光。这些结果为进一步扩展稀土配合物在发光材料以及磁材料中的应用奠定了基础。     

Si(001)-(2*2*1):H表面O2吸附的密度泛函理论研究

建立了一种计算Si(001)-(2×2×1):H表面O2吸附的理论模型．在周期性边界条件下,采用基于密度泛函理论广义梯度近似的超软赝势法对Si(001)-(2×2×1):H表面O2吸附进行了第一性研究．通过占位能的计算,得到了Si(001)-(2×2×1):H表面O2的最佳吸附位置．计算结果表明吸附后的反应产物应为Si=O和H2O,从理论上支持了D．Kovalev等人提出反应机制．     

Si（100）（2×1）表面光学二次谐波强度随温度的变化关系

通过测量基频光波长为１．０６４μｍ时几个不同掺杂类型和掺杂浓度的Ｓｉ（１００）（２×１）样品表面反射二次谐波强度随温度的变化关系，说明在此波长上二次谐波不是来源于表面耗尽场的影响，而是来源于表面态电子。Ｓｉ（１００）（２×１）表面反射二次谐波强度反比于温度的平方。本文提出了一个简单模型，给出了初步解释。     

Intergranular Tunnelling and Field-Induced Percolation Fluctuation of Granular Composites （La1-zAgzMnO3）/（MnO2/Mn2O3）

We investigate the giant magnetoresistance of composites （La1-xAgzMnO3）1-υ（MnO2/Mn2O3）υ. The magnetoresistive property of the composites shows the characteristics of intergranular tunnelling. A conductivity leap has been observed around y = 0.7. The composite （La0.926Ag0.074MnO3）0.698（MnO2/Mn2O3）0.302 has been found to show the greatest magnetoresistance in the samples. Its room-temperature MR ratio reaches 24% under a field of 1.8T. These phenomena suggest a percolation transformation and a kind of field-induced fluctuation in percolation in the samples investigated.     

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.