Porous Semiconductors: Advanced Material for Gas Sensor Applications

The present review article is devoted to the analysis of the problems related to the design of gas sensors based on porous semiconductors (PS). The peculiarities of the semiconductor porosification by anodic etching and the principles of gas sensor design based on porous semiconductors, including gas sensor construction and main operating characteristics, are considered in the article. It is shown that the influence of the surrounding atmosphere on such parameters of porous semiconductors as refractive index, the intensity of photoluminescence, electroconductivity, dielectric constant, and surface potential might be used for gas sensor design. Based on the conducted analysis it is concluded that porous semiconductors have a great potential for the above-mentioned applications. However, the realization of those opportunities is restrained by such factors as bad reproducibility, increased temporal drift of characteristics, low selectivity, and an unsatisfactory level of understanding of the operating mechanism of sensors fabricated on the basis of porous semiconductors.     

Effects on the evolution of microstructure and properties of low-silicon cast aluminum alloys in service

ABSTRACT

The microstructure evolution and property change of four kinds of low silicon cast aluminum alloy exposed to heat for 0–50?h at 200°C were studied by means of Brinell hardness test, tensile property test, friction and wear property test and XRD analysis. The results show that with increasing thermal exposure time, the tensile strength of each group of samples decreased and the amount of wear increased. The tensile strength of samples with more Si content decreased slowly. When the time increased to 50?h, the increase of wear loss was the largest. The hardness of samples after thermal exposure increases compared with that before thermal exposure. The residual stress of (311) diffraction crystal surface of AlSi3.5Mg0.66 under different thermal exposure time was measured. The type of residual stress changed from residual tensile stress to residual compressive stress after thermal exposure. There is an abnormal phenomenon that the hardness of the sample increased and the amount of wear increased, and it is evident that the distribution of residual stress was inhomogeneous after thermal exposure. It is found that with increasing thermal exposure time to 50?h, the average lattice distortion ε of the low-index crystal plane and the high-index crystal plane in the aluminum alloys gradually increased.     

快速测定硅铁中的硅量

试样以硝酸、氢氟酸溶解，在3mol/L硝酸介质中，加入饱和硝酸钾，使硅酸生成氟硅酸钾沉淀，经过滤，洗涤，除去大部分游离酸，在硝酸钾－乙醇混合液存在下，用氢氧化钠中和残余游离酸，加入沸水使氟硅酸钾沉淀水解，以溴百里香粉蓝－酚红为指示剂，用氢氧化钠标准溶液滴定计算硅量，本方法操作简单，容易掌握，可大大节约分析时间，测定结果令人满意。     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

硅光波导的束传播法设计及制备

报道用束传播法模拟设计、指导硅大断面单模脊形光波导的制备工艺，应用傅里叶变换法计算了硅光波导中导模的传播常数，对实际研制成功的ＳＩＭＯＸ及Ｓｉ／ＧｅｘＳｉ１－ｘ／Ｓｉ单模脊形光波导，比较了其性能差异并给予理论解释。     

溶胶-凝胶法制备发光薄膜现状

发光薄膜在对比度、分辨率、热传导、均匀性、与基底的附着性、释气速率等方面都显示出较强的优越性,在平板显示领域具有很好的应用背景。本文结合我们的工作综述了通过溶胶－凝胶工艺制备发光薄膜的基本过程、薄膜的表征方法、发光薄膜的当前发展及应用情况。依据组成特点,溶胶－凝胶法制备的发光薄膜可分为无机发光薄膜和有机／无机杂化发光薄膜,它们的光致发光、阴极射线发光、场发射发光和电致发光等性质都已被广泛研究。我们除了采用硅酸酯为主要原料制备了一些硅酸盐基发光薄膜外,还以无机盐为主要原料通过Pechini溶胶－凝胶法制备了稀土离子掺杂的钒酸盐发生薄膜,并结合毛细管微模板技术实现了发光薄膜的图案化。最后,我们对未来溶胶－凝胶法制备发光薄膜的发展及应用情况进行了展望。     

氮化硅粉料的漫反射傅里叶变换红外光谱研究

利用漫反傅里叶变换红外（DRIFT）光谱技术，研究了氮化硅粉示纯样品和KBr稀释后样品的漫反射光谱的差别，并利用氮化硅粉末纯样品的DRIFT谱图，研究了四种商业氮化硅粉料初始及锻烧后的表面特征，研究发现，与KBr稀释的样品相比，氮化硅粉末纯样品的漫反射红外光谱在1190cm^-1波数处出现了对应于颗粒表面Si-O振动的尖锐强峰。所研究的四种商业氮化硅原始料漫反射光普有很大的差异，煅烧处理后粉料表面的氨基基因和Si-H消失，Si-O和Si-OH的数量显著增加。     

间接原子吸收光谱法测定四氧化三钴中的微量硅

以盐酸、甲醛溶解试样,在ｐＨ１～２的盐酸介质中,硅、磷与钼酸铵生成硅钼及磷钼杂多酸。以乙酸丁酯萃取磷钼酸分离除去磷,再用ＭＩＢＫ萃取硅钼酸,因硅与钼原子数之比为１１２,利用原子吸收光谱法测定有机相中的钼,即可间接测定硅。本法测定高纯四氧化三钴中的硅有很高的灵敏度,检测限达０．２μｇ／ｍＬ,并可避免基体钴及其他共存元素的干扰。与分光光度法对照,结果满意。     

ICP-AES测定鲜蔬果等农作物中硅

试样经料理机打成浆体,湿-干法（700-750℃）消解完全,HCI-HF溶解后,加入适量H_3BO_3消除氟离子干扰,基体匹配后用ICP-AES测定鲜蔬果等农作物中硅。方法检出限0.48mg/L,回收率88%—120%,ICP-AES测定值与重量法测定值一致。本方法可快速、准确测定Si含量≥2.4mg/kg的农作物样品。     

包埋于氮化硅薄膜中的硅团簇的光致发光特性

采用等离子体增强化学气相沉积(PECVD)技术,在低温下制备了富硅氢化氮化硅薄膜。利用红外吸收(IR)谱,光电子能谱(XPS)和光致发光(PL)谱,研究了在不同温度下退火的薄膜样品的结构和发光特性。在经过低温退火的薄膜中观测到一个强的可见发光峰。当退火温度较高时,随着与硅悬键有关的发光峰消失,可见发光峰位发生了蓝移。讨论了退火对薄膜中硅团簇的形成及其对发光的影响。根据Raman谱,计算了氮化硅薄膜中硅团簇的尺寸大小。通过实验结果和分析,我们认为PL谱中较强的室温可见发光峰来自于包埋于氮化硅中的硅团簇。     

提高多孔硅传感特性的一种新方法(英文)

研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。     

In situ Grafting onto Silica Surface with Epoxidized Natural Rubber via Solid State Method

An in situ solid state grafting reaction between epoxidized natural rubber (ENR) and silica was performed in a Haake internal mixer. Resulting ENR‐grafted silica was characterized by Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis (TGA) measurements. Based on these results, it was concluded the silanol groups (Si‐OH) of silica caused the ring opening of ENR oxirane rings so that ENR was grafted onto the silica surface. Transmission electron microscopy (TEM) photographs showed ENR‐grafted silica had better dispersibility and smaller aggregates compared with the original silica. Dynamical mechanical analysis (DMA) of vulcanized rubber compounds contained ENR‐grafted silica showed the glass transition temperature (T _g) of grafted ENR molecules shifted to higher temperature, from ?3°C to 20°C, indicating the mobility of ENR was greatly restricted. As a result, the compounds containing ENR‐grafted silica have higher hysteresis, and can be applied in a much wider field, such as damping materials, tires of racing cars, and so on.     

Strain Effect on the Absorption Threshold Energy of Silicon Circular Nanowires

In this work,the influence of strain on threshold energy of absorption in Silicon circular nanowires is investigated.For this purpose,we first have used the density functional theory(DFT) to calculate the electron and hole effective masses.Then,we have obtained absorption threshold energy with two different procedures,DFT and effective mass approximation(EMA).We have also obtained the band structures of Si nanowires both DFT and EMA.The results show that:i) the expansive strain increases the hole effective mass while compressive strain increases the electron effective mass,ii) the electron and hole effective masses reduce with decreasing the wire size,iii) the absorption threshold energy decreases by increasing strain for compressive and tensile strain and its behavior as a function of strain is approximately parabolic,iv) the absorption threshold energy(for all sizes) obtained using EMA is greater than the DFT results.     

硅衬底GaN基LED薄膜芯片的应力调制

将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片,并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现:垂直结构LED薄膜芯片在160~180℃下退火应力释放明显,200℃时应力释放充分,GaN的晶格常数接近标准值。继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。     

In插入层对硅衬底外延InN晶体质量和光学特性的影响

在Si(111)衬底上分别预沉积0,0.1,0.5,1 nm厚度的In插入层后,采用等离子辅助分子束外延法制备了纤锌矿结构的InN材料,结合X射线衍射(XRD)、扫描电子显微镜(SEM)、吸收谱及光致发光谱研究了不同厚度的In插入层对外延InN晶体质量和光学特性的影响。XRD和SEM的测试结果表明,在Si衬底上预沉积0.5 nm厚的In插入层有利于改善外延InN材料的形貌,提高材料的晶体质量。吸收谱和光致发光谱测试表明,0.5 nm厚In插入层对应的InN样品吸收边蓝移程度最小,光致发射谱半峰宽最窄,并且有最高的带边辐射复合发光效率。可见,引入适当厚度的InN插入层可以改善Si衬底上外延InN材料的晶体质量和光学特性。     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

In插入层对硅衬底外延InN晶体质量和光学特性的影响

在Si（111）衬底上分别预沉积0,0.1,0.5,1 nm厚度的In插入层后,采用等离子辅助分子束外延法制备了纤锌矿结构的InN材料,结合X射线衍射（XRD）、扫描电子显微镜（SEM）、吸收谱及光致发光谱研究了不同厚度的In插入层对外延InN晶体质量和光学特性的影响。XRD和SEM的测试结果表明,在Si衬底上预沉积0.5 nm厚的In插入层有利于改善外延InN材料的形貌,提高材料的晶体质量。吸收谱和光致发光谱测试表明,0.5 nm厚In插入层对应的InN样品吸收边蓝移程度最小,光致发射谱半峰宽最窄,并且有最高的带边辐射复合发光效率。可见,引入适当厚度的InN插入层可以改善Si衬底上外延InN材料的晶体质量和光学特性。     

Investigation of characteristic properties of Pr-doped SnO2 thin films

In the present work, an investigation study on the crystal structure, surface morphology, electrical conductivity and optical transparency of spray-deposited Pr-doped SnO₂ was made as a function of Pr doping content. The X-ray diffraction studies indicated that the films were grown at the (2 1 1) preferential orientation. The values of crystallite size and strain were determined using Williamson–Hall method and they varied between 71.47 and 208.76 nm, and 1.98 × 10^?3 – 2.78 × 10^?3. As seen from Scanning Electron Microscope micrographs, the films were composed of homogenous dispersed pyramidal-shaped grains. The n-type conductivity of films was confirmed with Hall Effect measurements, and the best electrical parameters were found for 3 at.% Pr doping level. The highest optical band gap and transmittance values were observed for undoped SnO₂ sample. The highest figure of merit (Φ), which is a significant parameter to interpret the usage efficiency of conductive and transparent materials in the optoelectronic and solar cell applications, was calculated to be 2.85 × 10^?5 Ω^?1 for 1 at.% Pr doping content. As a result of this study, it may be concluded that Pr-doped SnO₂ films with above properties can be used as a transparent conductor in various optoelectronic applications.     

1064 nm纳秒脉冲激光诱导硅表面微结构研究

利用Nd:YAG纳秒激光(波长为1064 nm)在不同气氛(空气、N₂,真空)中对单晶硅进行累积脉冲辐照,研究了表面微结构的演化情况.在激光辐照的初始阶段,与532和355 nm纳秒脉冲激光在硅表面诱导出波纹结构不同,1064 nm脉冲激光诱导出了微孔结构和折断线结构,并且硅的晶面取向不同,相应的折断线结构也不同.对于Si(111)面,两条折线交角为120°或60°,形成网状;而对于Si(100)面,两条折断线正交,从而将表面分成了15—20 μm的矩形块.结果表明,微孔结构的生长过程主要与相爆炸有关,而折断线的形成主要是热应力作用的结果.不同气氛对微结构形成的影响表明,刻蚀率和生长率与微结构的形成有密切的关系. 关键词： 纳秒激光 硅的微结构 相爆炸 热应力     

Lead Inclusions in Silicon: Structure, Morphology, and Thermal Behavior

Small inclusions of lead have been embedded in pure silicon by rapid quenching. They are topotactic-truncated octahedra with a smaller aspect ratio than the ones found in aluminum. They appear also on single and multiple twins as a bicrystalline unit with a compound morphology. No overheating has been detected, while undercooling is size dependent and can reach 80 K. These results are compared to the structure, morphology and thermal behavior of lead inclusions in aluminum and other cubic matrices.