共查询到16条相似文献,搜索用时 141 毫秒
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用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用的HfO2光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把节瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。 相似文献
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用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用HfO2/SiO2薄膜进行了表面显微图象研究,分析了薄膜常见的表面缺陷,如节瘤,孔洞和划痕等。薄膜表面缺陷的激光损伤实验表明,不同缺陷的抗激光损伤能力不大相同。节瘤缺陷最低,约为15J/cm^2,薄膜的损伤阈值主要由其决定,孔洞的激光损伤能力与节瘤相比较高,约为节瘤的2-3倍。节瘤缺陷在低能量密度的激光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。 相似文献
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激光弱吸收是导致光学薄膜损伤的重要原因。在(5~43)mPa的氧分压下制备并测试了一组HfO2薄膜。实验发现,当氧分压小于20mPa时,薄膜弱吸收越大,损伤阈值越低;当氧分压大于20mPa时,薄膜的损伤阈值与弱吸收并不一一对应,具有较高弱吸收的薄膜可能同时具有较高的损伤阈值。建立了缺陷模型,采用有限元法模拟了缺陷对弱吸收测量和损伤阈值测量的影响,分析了缺陷尺寸、密度、吸收系数对弱吸收和损伤阈值的影响。研究结果显示,吸收系数高于薄膜1 000倍的缺陷可以降低薄膜的损伤阈值1 000倍,却并不影响薄膜的弱吸收。缺陷对HfO2薄膜的激光弱吸收与损伤阈值测试有完全不同的影响,是导致某些薄膜弱吸收与损伤阈值背离的原因。 相似文献
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In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are observed, which are located at ?E ~-1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO_2/HfO_2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO_2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment,and reliability improvement for advanced semiconductor devices. 相似文献
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采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜,采用波长为1 064 nm的激光对其进行了小光斑激光预处理,对比研究了预处理前后的激光损伤差异,研究表明:激光预处理对于洁净的SiO2薄膜影响不大;含10 μm SiO2颗粒杂质的样品微透镜效应很明显,容易成为损伤起始的种子,激光预处理后情况有所改善;含有CeO2颗粒杂质的样品表现出了很强的吸收性质,损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化,透光率峰值均有约50 nm的蓝移。 相似文献
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Samples with nodular defects grown from gold nanoparticles are prepared,and laser-induced damage tests are conducted on them.Nodular defects,which are in critical state of damage,are cross-sectioned by focusing on the ion beam and by imaging using a field emission scanning electron microscope.The crosssectional profile shows that cracks are generated and propagated along the nodular boundaries and the HfO2/SiO2 interface,or are even melted.The thermomechanical process induced by the heated seed region is analyzed based on the calculations of temperature increase and thermal stress.The numerical results give the critical temperature of the seed region and the thermal stress for crack generation,irradiated with threshold fluence.The numerical results are in good agreement with the experimental ones. 相似文献
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The accumulation effects in high-reflectivity(HR) HfO2/SiO2 coatings under laser irradiation are investigated.The HR HfO2/SiO2 coatings are prepared by electron beam evaporation at 1 064 nm.The laser-induced damage threshold(LIDT) are measured at 1 064 nm and at a pulse duration of 12 ns,in 1-on-1 and S-on-1 modes.Multi-shot LIDT is lower than single-shot LIDT.The laser-induced and native defects play an important role in the multi-shot mode.A correlative theory model based on critical conduction band electron density is constructed to elucidate the experimental phenomena. 相似文献