复合层状Bi7Ti4 NbO21铁电陶瓷的结构与介电和压电性能研究

制备了Bi7Ti4NbO21，Bi4Ti3O12及Nb掺杂Bi4Ti3O12(Nb-Bi4Ti3O12)层状结构铁电陶瓷材料．结合Nb-Bi4Ti3O12的介电温谱和退极化实验结果，研究了Bi7Ti4NbO21的晶体结构对其介电、压电性能的影响．高分辨透射电镜结果表明，在Bi7Ti4NbO21中，沿着c轴方向，(Bi2Ti3O10)^2-和(BiTiNbO7)^2-。两个类钙钛矿层分别与(Bi2O2)^2 层叠加堆积而成．这种晶体结构决定了Bi7Ti4NbO21的介电温谱在668℃和845℃出现介电双峰．结合极化样品的退化实验分析，说明材料在这两个温度附近发生了铁电一铁电相变、铁电一顺电相变，分别是(Bi2Ti3O10)^2-和(BiTiNbO7)^2-层状结构发生微观结构相变的结果．在退极化过程中，由于受热时钙钛矿层内空位引起的缺陷偶极子的定向排列受到破坏，引起材料部分退极化，表现为300℃热处理后Bi7Ti4NbO21的压电活性降低了10％，显示了室温下材料的压电性能来源于自发极化的固有电偶极子和缺陷偶极子的共同贡献．     

致密—多孔—致密夹心PZT压电陶瓷及其在换能器方面的应用

本文用比较简单的陶瓷制造方法,制备了致密—多孔—致密夹心PZT陶瓷,并测定其在不同致密层和不同气孔率下的介电、弹性和压电性.这种夹心陶瓷呈现了大的静态电压压电系数g_k~*—170×10~(-3)vM/N,和小的介电常数—210. 用这种夹心陶瓷做成的水听器,要比用同样尺寸的普通致密PZT陶瓷做成的水听器灵敏度高,频带宽,并能经受100kg/cm~2的静压力.若用于无损检测或医学超声探头,夹心陶瓷具有较大的潜力.     

多孔钛酸钡陶瓷制备及其增强的压电灵敏性

在压电陶瓷中增加孔洞数量,可以有效改善陶瓷的静水压优值,提高其压电灵敏性.考虑到铅基压电陶瓷对环境和人体的危害,本文以糊精为造孔剂,采用传统固相烧结法制备无铅钛酸钡(BaTiO_3)多孔压电陶瓷.研究烧结温度(1250,1280,1300℃)和糊精含量(5%,10%,15%)对BaTiO_3陶瓷晶体结构、孔隙率以及孔形貌特征的影响,探索孔隙率与BaTiO_3陶瓷介电、压电、声阻抗以及静水压优值等性能之间的相关性.结果表明:所有多孔陶瓷表现出三维贯通的开气孔,尺寸约为1—7μm.烧结温度强烈影响BaTiO_3陶瓷的孔隙率,加入10%低沸点的糊精时,1250℃和1280℃烧结均获得孔隙率高达58%的多孔BaTiO_3陶瓷;然而1300℃烧结,陶瓷孔隙率急速下降到13%.1250℃烧结10%糊精含量的陶瓷表现出高的静水压优值(约8376×10~/(-15)Pa~(-1))和低的声阻抗(约2.84MRrayls(1Rayl=10Pa·s/m)).与1250℃相比,1280℃烧结的陶瓷晶粒之间的结合力明显增强,有利于提高陶瓷的力学强度.这些优异的性能预示着多孔钛酸钡陶瓷在传感器和水听器领域有着潜在的应用前景.     

晶粒尺寸对钙钛矿型压电陶瓷压电性能的影响

压电陶瓷能够通过正/逆压电效应实现电能与机械能之间的相互转化,在电子信息、通信、传感等领域中具有广阔的应用前景.压电陶瓷的压电性能对晶粒尺寸极为敏感,其晶粒尺寸效应的研究受到了广泛关注.本文对目前应用较多的几类钙钛矿型压电陶瓷,包括钛酸钡、锆钛酸铅、铌酸钾钠、钛酸铋钠陶瓷的压电性能晶粒尺寸效应的研究与进展进行了综述;总结了这些体系中晶粒尺寸的调控方法,晶粒尺寸效应的表现规律,同时回顾了相关物理模型与理论机制.本文为系统理解压电性能的晶粒尺寸效应提供了指导,并对压电陶瓷晶粒尺寸效应的未来研究方向做出了展望.     

Sr位Nd掺杂对SrBi2Nb2O9性能的影响及机理研究

采用传统固相法制备了(Sr1-3x/2Ax/2Ndx)Bi2Nb2O9(x=0,0.05,0.1和0.2)陶瓷,并系统研究了Nd离子取代Sr离子对SrBi2Nb2O9性能的影响及其作用机理.研究结果表明:Sr1-3x/2Ax/2NdxBi2Nb2O9的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd3+对Sr2+的部分取代,导致Sr1-3x/2Ax/2NdxBi2Nb2O9剩余极化强度Pr稍有下降,但其压电系数d33却有所增加,根据铁电热力学理论,这是Nd3+对Sr2+取代导致材料介电常数增大所致.Sr1-3x/2Ax/2NdxBi2Nb2O9的居里温度(TC)没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO6八面体畸变程度没有发生变化所致.Nd3+取代Sr2+提高了材料的介电常数εr、压电系数d33、机电耦合系数Kp,同时降低了机械品质因数Qm,但是谐振频率温度系数C值没有改变.     

静水压下锆锡钛酸铅铁电陶瓷相变和介电性能研究

研究了铌掺杂锆锡钛酸铅铁电陶瓷Pb_0.99Nb_0.02[(Zr_0.90Sn_0.10)_0.96Ti_0.04]_0.98O₃(PZST 90/10-4-2Nb)在静水压(0-300 MPa)下的电荷释放量和介电性能. 对压力诱导的低温铁电三方(F_R(LT))→反铁电正交(A_O)相变进行了研究. PZST 90/10-4-2Nb铁电陶瓷分为未极化、极化和压力去极化三种. 极化PZST 90/10-4-2Nb陶瓷F_R(LT)→A_O相变过程中,电荷释放量为29.3 μC/cm²,相变压力为140 MPa. 介电性能表明:极化PZST 90/10-4-2Nb陶瓷相变压力为136 MPa,而未极化陶瓷相变压力为104 MPa,压力去极化陶瓷未表现出明显的相变特征. 关键词： 静水压 铁电陶瓷 相变 介电     

静电场中多孔PZT95/5铁电陶瓷的通道电-机械击穿模型及分析

作为爆电电源的多孔PZT95/5铁电陶瓷具有极为重要的工程应用背景,但它在强电场作用下易发生电击穿失效,从而影响其放电效率,甚至造成电源失效。基于多孔PZT95/5铁电陶瓷材料在外电场作用下内部形成导电通道以致电失效的机制,通过通道内部局部放电及通道电-机械击穿机理,建立了导电通道诱导的多孔铁电陶瓷的电击穿模型并进行了相关的理论分析。基于本模型,给出了不同孔隙率下铁电陶瓷的电击穿临界电场强度,预测结果与实验测试结果吻合良好,且材料孔隙率越大,内部电击穿通道的特征尺寸越大,导致铁电陶瓷材料的电击穿临界场强显著降低。     

B位空位补偿型钐掺杂PZT(54/46)陶瓷中的缺陷分析及其对压电性能的影响

-用固相反应法制备了B位空位补偿型钐掺杂非准同型相界组分PZT(54/46)陶瓷.通过正电子湮没寿命谱(PALS)和符合多普勒展宽能谱(CDBS)对陶瓷中的缺陷结构进行综合表征,结合常规表征手段如X射线衍射(XRD),电子扫描显微镜(SEM),介电、铁电和压电性能测量,研究缺陷对陶瓷压电性能的影响. XRD结果显示所有陶瓷均为纯钙钛矿相,掺杂诱导了菱方-四方(R-T)相变,准同型相界位于Sm掺杂量x=0.010.02.电学测量结果反映:介电、铁电和压电性能均先增强后减弱, MPB附近两个样品都有优异的介电和铁电性能,但其压电性能差别很大. x=0.01给出最优压电性能d₃₃=572 p C/N,较未掺杂样品增强了一倍.PALS结果表明掺杂使陶瓷中缺陷类型发生变化, x≤0.01,样品中同时含有A位空位与B位空位; x≥0.02,样品中以A位相关缺陷为主, B位空位浓度很低. CDBS结果进一步证实x=0.01和0.02中B位空位浓度分别是该体系中最高和最低的.由以上结果推断出:x=0.01获得的最优压电性能与其中较高浓度的B位空位有关, B位空位可稀释A位空位浓度...     

Sr位Nd掺杂对SrBi$lt;sub$gt;2$lt;/sub$gt;Nb$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;9$lt;/sub$gt;性能的影响及机理研究

采用传统固相法制备了（Sr_1-3x/2A_x/2Nd_x）Bi₂Nb₂O₉（x=0,0.05,0.1和0.2）陶瓷,并系统研究了Nd离子取代Sr离子对SrBi₂Nb₂O₉性能的影响及其作用机理.研究结果表明：Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd³⁺对Sr²⁺的部分取代,导致Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉剩余极化强度P_r稍有下降,但其压电系数d₃₃却有所增加,根据铁电热力学理论,这是Nd³⁺对Sr²⁺取代导致材料介电常数增大所致.Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉的居里温度（T_C）没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO₆八面体畸变程度没有发生变化所致.Nd³⁺取代Sr²⁺提高了材料的介电常数ε_r、压电系数d₃₃、机电耦合系数K_p,同时降低了机械品质因数Q_m,但是谐振频率温度系数C值没有改变. 关键词： 压电陶瓷 介电性能 压电性能 拉曼光谱     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

PZT四方相区介电常数εr与晶格畸变关系的研究

从Haun的PZT热力学理论出发，给出了PZT四方相区介电常数ε_r与晶格畸变c/a关 系的基本方程，并深入地根据相关实验资料和物理图像的合理推论，建立了关于晶格畸变c/ a与介电常数ε_r相互依赖的基本关系式.然后，根据该基本关系式仔细地研究了PZT四 方相区晶格畸变c/a对介电常数ε_r影响的物理图像.与相关实验资料比较表明，基本 关系式得到的介电常数ε_r随晶格畸变c/a的变化规律,与相关实验结果相比较，两者 吻合得 关键词： 晶格畸变 r')" href="#">介电常数ε_r 四方相 PZT     

Enhancing electrical properties of high-Curie temperature piezoelectric ceramics BNT-PZT and their mechanism

Due to the urgent demands for high-Curie temperature (T_C/T_m) piezoelectric materials in geothermal exploration, aerospace and related fields, high-T_C/T_m ferroelectrics have attracted booming research attention. The high-T_m 0.25Bi(Ni_1/2Ti_1/2)O₃-0.75 Pb(Zr_1/2Ti_1/2)O₃ (0.25BNT-0.75PZT) ceramics were prepared by solid-state sintering method and via partial oxalate route, where the 0.25BNT-0.75PZT ceramics prepared via the partial oxalate route exhibit better electrical properties (T_m = 232 °C (10 kHz), ε_m = 10963, P_r = 26.14 μC/cm², E_c = 15.61 kV/cm, d₃₃ = 521 pC/N, d₃₃* = 553.3 pm/V, K_p = 47.1%, and Q_m = 21.6). The nano-scale domain configuration of the ceramics was revealed by piezoelectric force microscopy (PFM), and the relationship between the micro-structure and macro-electrical properties was analyzed. The ferroelectric phase transition mechanism was studied by temperature dependent Raman spectroscopy. The reduction of energy barrier of lattice distortion and polarization deflection is caused by nanometer-sized domain structure, low symmetric polar nano-regions and/or coexistence of multi-ferroelectric phases, contributing to the excellent electrical properties of the 0.25BNT-0.75PZT ceramics prepared via the partial oxalate route.     

Uniaxial pressure influence on dielectric properties of Pb(Zr0.99Ti0.01)O3 single crystals

The effect of uniaxial pressure (0–1000 bars) applied parallel to AC electric field on dielectric properties of Pb(Zr_0.99Ti_0.01)O₃ single crystals has been investigated. It was found that uniaxial pressure significantly influences these properties. With increasing pressure: (i) peak ?(T) decreases, becomes diffuse and shifts to higher temperature, (ii) the thermal hysteresis is reduced, (iii) the hump in ?(T) profile connected with antiferroelectric–intermediate phase transition vanishes, and (iv) the local anomaly in ?(T) profile connected with polar microregions existence above T_m is protruded and slightly shifts towards higher temperature. It was concluded, that applied uniaxial pressure or increasing Ti-ions content in lead zirconate titanate system induces similar effects. The results were discussed in terms of domain switching under pressure.     

Structural and dielectric properties of phosphorous-doped PLZT ceramics

In the present work we have reported the unique effects of P₂O₅-doped PLZT ceramics with composition (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃ +x wt% of P₂O₅ (wherex = 1, 3 and 5) prepared chemically by co-precipitation method. X-ray diffraction studies suggest that the prepared compound was very fine (10–25 nm), homogeneous and of rhombohedral symmetry. The apparent density of samples decreased with the P⁵⁺ additions. Studies of dielectric constant and dielectric loss as a function of frequency (10–1000 kHz) and temperature suggest that the compound undergoes diffuse type of phase transition without any sign of relaxor behaviour. With increasingx, dielectric constant was found to decrease appreciably, whereas Curie temperature (T_C) was found to increase     

Second harmonic generation and dielectric study of the fine and coarse grain PMN-35PT ceramics

We investigated the grain size effect on the high temperature behaviour of PMN-35PT ceramics around the tetragonal–cubic phase transition using second harmonic generation (SHG) and dielectric spectroscopy. Our data revealed coexistence of the first-order ferroelectric phase transition and relaxor behaviour in the coarse grain (grain size ～4 µm) µ_PMN-35PT. The phase transition is hindered and relaxor features prevail in the fine grain (grain size ～150 nm) n_PMN-35PT ceramics. Effect of the grain-size reduction on the SHG and dielectric response could be attributed to stabilisation of intermediate domain configurations between the frozen polar nanoclusters and large ferroelectric domains and to the enhanced stability of polar nanoclusters in the fine grain ceramics.     

复合层状Bi7Ti4NbO21铁电陶瓷的结构与介电和压电性能研究

制备了Bi₇Ti₄NbO_{21，Bi4Ti3O12及Nb掺杂Bi4Ti3O12(Nb-Bi4Ti3O12)层状结构铁电陶瓷材料.结合Nb-Bi 4Ti3O12的介电温谱和 退极化实验结果，研究了Bi7Ti4NbO21的晶体结构 对其介电、压电性能的影响 .高分辨透射电镜结果表明，在Bi7Ti4NbO21中， 沿着c轴方向，(Bi2Ti3O10)^2-和(BiTiNbO7)^2-两个类钙钛矿层分别 与(Bi2O2)²⁺层叠加堆积而成.这种晶体结构决定了Bi7Ti4NbO21的 介电温谱在668℃和845℃出现介 电双峰.结合极化样品的退化实验分析，说明材料在这两个温度附近发生了铁电—铁电相变 、铁电—顺电相变，分别是(Bi2Ti3O10)^{2-< /sup>和(BiTiNbO7)2-层状 结构发生微观结构相变的结果.在退极化过程中，由于受热时钙钛矿层内空位引起的缺陷偶 极子的定向排列受到破坏，引起材料部分退极化，表现为300℃热处理后Bi7Ti 4NbO 21的压电活性降低了10%，显示了室温下材料的压电性能来源于自发极化的固有电 偶极子和缺陷偶极子的共同贡献.}}