Spectroscopic investigation of the deeply buried Cu(In,Ga)(S,Se)2/Mo interface in thin-film solar cells

The Cu(In,Ga)(S,Se)(2)Mo interface in thin-film solar cells has been investigated by surface-sensitive photoelectron spectroscopy, bulk-sensitive x-ray emission spectroscopy, and atomic force microscopy. It is possible to access this deeply buried interface by using a suitable lift-off technique, which allows us to investigate the back side of the absorber layer as well as the front side of the Mo back contact. We find a layer of Mo(S,Se)(2) on the surface of the Mo back contact and a copper-poor stoichiometry at the back side of the Cu(In,Ga)(S,Se)(2) absorber. Furthermore, we observe that the Na content at the Cu(In,Ga)(S,Se)(2)Mo interface as well as at the inner grain boundaries in the back contact region is significantly lower than at the absorber front surface.     

Depth profiling with SNMS and SIMS of Zn(O,S) buffer layers for Cu(In,Ga)Se2 thin‐film solar cells

Zn(O,S) is a promising candidate to replace the commonly used CdS buffer layer for Cu(In,Ga)Se₂ (CIGS) thin‐film solar cells due to its non‐toxicity and its potential to enhance the conversion efficiency of the CIGS solar cell. The composition of chemical bath deposited (CBD) and sputtered Zn(O,S) layers with thicknesses well below 100 nm was determined by sputtered neutral and secondary ion mass spectrometry (SNMS and SIMS). Despite numerous mass interferences of double‐charged atoms and dimers with single Zn, O and S isotopes, we developed an evaluation algorithm for quantification of SNMS depth profiles of Zn(O,S) layers. In particular, the superposition of double‐charged S and Zn atoms with O and S isotopes is accounted for numerically in the quantification procedure. For sputtered Zn(O,S) layers, the S/(S + O) atomic ratio and the vertical composition profile can be controlled by the O₂ content in the gas flow and the substrate temperature during sputtering whereas for CBD Zn(O,S) the S/(S + O) ratio is constant around 0.7–0.8. A Cu‐depleted layer of about 5 nm on the CIGS surface after buffer deposition was observed for both preparation methods. With negative SIMS, we found more hydroxides and carbon residues in CBD Zn(O,S) as compared to sputtered layers. Best cell performance with sputtered Zn(O,S) layers was achieved for S/(S + O) ratios of 0.25–0.40, yielding efficiencies up to 13%. Our solar cells with CBD Zn(O,S) buffers exhibit higher efficiencies due to an improved open‐circuit voltage. Copyright © 2013 John Wiley & Sons, Ltd.     

铜锌锡硫硒太阳能电池Mo/CZTSSe界面调控研究进展

Cu2ZnSn(Sx,Se1-x)4太阳能电池制备过程中Mo基底硒(硫)化反应产生较厚的Mo(Sx,Se1-x)2,以及SnS(e)与ZnS(e)的生成与挥发在Mo/CZTSSe界面处产生的孔洞,是限制器件性能提升的重要原因.针对这些问题,总结了Mo(Sx,Se1-x)2和孔洞的生成原因及其对器件性能的影响.此外,还综...     

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment at CdS/Cu₂ZnSnSe₄ heterojunction interface is studied by X‐ray photoemission spectroscopy. The Cu₂ZnSnSe₄ thin films are prepared by selenization of electrodeposited Cu‐Zn‐Sn precursors. CdS overlayers with different thickness are sequentially grown on the Cu₂ZnSnSe₄ substrate by pulsed laser deposition process. Photoemission spectra are obtained before and after each growth to study the conduction and valence band offsets at the heterojunction interface. The determined conduction band offset of 0.34 eV indicates a spike‐like ‘type I’ band alignment at CdS/Cu₂ZnSnSe₄ interface. The spike will avoid interface recombination, and it is low enough that electron could transfer from the Cu₂ZnSnSe₄ layer to the buffer layer which is suitable for solar cell's fabrication. Copyright © 2012 John Wiley & Sons, Ltd.     

Soluble precursors for CuInSe2, CuIn(1-x)Ga(x)Se2, and Cu2ZnSn(S,Se)4 based on colloidal nanocrystals and molecular metal chalcogenide surface ligands

We report a new platform for design of soluble precursors for CuInSe(2) (CIS), Cu(In(1-x)Ga(x))Se(2) (CIGS), and Cu(2)ZnSn(S,Se)(4) (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe(2), we used Cu(2-x)Se NCs capped with In(2)Se(4)(2-) MCC surface ligands or CuInSe(2) NCs capped with {In(2)Cu(2)Se(4)S(3)}(3-) MCCs. A mixture of Cu(2-x)Se and ZnS NCs, both capped with Sn(2)S(6)(4-) or Sn(2)Se(6)(4-) ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications.     

Detection of trace impurities in Cu(In, Ga)Se2 thin film solar cells by laser ablation ICP-MS

CIGS solar cells (CIGS: CuInSe₂, doped with gallium) on flexible glass fibre substrates were investigated to determine a possible migration of compounds from the substrate through the back contact layer into the absorber layer. We employed laser ablation ICP-MS to perform depth profile analysis as this technique combines ease of sample preparation with high sensitivity and moderate depth resolution. Careful optimization of the fluence and repetition rate of the laser system was necessary to ensure sufficient depth resolution in order to be able to relate the transient signals to the different layers. The results show that apart from sodium and small amounts of titanium no elements have migrated into the absorber layer. This was confirmed by micro-PIXE measurements on cross sections of the cell.     

Synthesis and characterization of Cu(In(x)B(1-x))Se2 nanocrystals for low-cost thin film photovoltaics

Chalcopyrite quaternary semiconductor Cu(In(x)B(1-x))Se(2) nanocrystals have been successfully prepared via a relatively simple and convenient solvothermal route. The effect of different solvents on the formation of the product also indicates that diethylenetriamine is the optimal solvent for this reaction. The device parameters for a single junction Cu(In(x)B(1-x))Se(2) solar cell under AM1.5G are as follows: an open circuit voltage of 265 mV, a short-circuit current of 25.90 mA/cm(2), a fill factor of 34%, and a power conversion efficiency of 2.34%. Based on a series of comparative experiments under different reaction conditions, the probable formation mechanism of crystal Cu(In(x)B(1-x))Se(2) nanorods is proposed.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Composition-tunable Zn(x)Cd(1-x)Se nanocrystals with high luminescence and stability

High-quality Zn(x)Cd(1-x)Se nanocrystals have been successfully prepared at high temperature by incorporating stoichiometric amounts of Zn and Se into pre-prepared CdSe nanocrystals. With increasing Zn content, a composition-tunable emission across most of the visible spectrum has been demonstrated by a systematic blue-shift in emission wavelength. The photoluminescence (PL) properties for the obtained Zn(x)Cd(1-x)Se nanocrystals (PL efficiency of 70-85%, fwhm = 22-30 nm) are comparable to those for the best reported CdSe-based QDs. In particular, they also have good PL properties in the blue spectral range. Moreover, the alloy nanocrystals can retain their high luminescence (PL efficiency of over 40%) when dispersed in aqueous solutions and maintain a symmetric peak shape and spectral position under rigorous experimental conditions. A rapid alloying process was observed at a temperature higher than "alloying point". The mechanism of the high luminescence efficiency and stability of Zn(x)Cd(1-x)Se nanocrystals is explored.     

Overall water splitting on (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution photocatalyst: relationship between physical properties and photocatalytic activity

The physical and photocatalytic properties of a novel solid solution between GaN and ZnO, (Ga(1-x)Zn(x))(N(1-x)O(x)), are investigated. Nitridation of a mixture of Ga(2)O(3) and ZnO at 1123 K for 5-30 h under NH(3) flow results in the formation of a (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.05-0.22. With increasing nitridation time, the zinc and oxygen concentrations decrease due to reduction of ZnO and volatilization of zinc, and the crystallinity and band gap energy of the product increase. The highest activity for overall water splitting is obtained for (Ga(1-x)Zn(x))(N(1-x)O(x)) with x = 0.12 after nitridation for 15 h. The crystallinity of the catalyst is also found to increase with increasing the ratio of ZnO to Ga(2)O(3) in the starting material, resulting in an increase in activity.     

Ce-doped ZnO (Ce(x)Zn(1-x)O) becomes an efficient visible-light-sensitive photocatalyst by co-catalyst (Cu2+) grafting

We have fabricated an efficient visible-light-sensitive Cu(2+)-grafted Ce-doped ZnO photocatalyst (Cu(2+)-Ce(x)Zn(1-x)O) by adopting a metal ion doping and co-catalyst modification. Impurity states were formed below the conduction band (CB) edge in Ce(x)Zn(1-x)O, and these impurity states induce the visible-light absorption. Ce(x)Zn(1-x)O without a Cu(2+)-co-catalyst showed negligible visible-light activity due to the low reduction power of electrons in impurity levels. Surprisingly, Cu(2+)-modification over Ce(x)Zn(1-x)O drastically increased its visible-light activity. Excited electrons in impurity states can transfer to the Cu(2+)-ions on the surface and form Cu(2+)/Cu(+) redox couples, which cause the efficient oxygen reduction through a multi-electron reduction process. One of the striking features of the present study is that the metal doped semiconductors which were inactive due to their impurity states become efficient visible-light photocatalysts upon co-catalyst modification. The successful strategy used here for designing a highly active visible-light photocatalyst would provide numerous opportunities to develop an efficient metal-ion based visible-light photocatalyst.     

Photoelectrochemical water splitting using a Cu(In,Ga)Se2 thin film

The effects of surface modification and reaction conditions on the photoelectrochemical properties of polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films for water splitting were studied. CIGS modified with platinum particles (Pt/CIGS) generated a cathodic photocurrent at potentials up to + 0.4 V vs. RHE at pH = 9.5. The photocurrent was stable for 16 h, which resulted in a turnover number of over 500. A CdS-inserted film (Pt/CdS/CIGS) had significantly improved properties compared to Pt/CIGS: a 0.3 V higher onset potential of cathodic photocurrent and a three-fold increase in the quantum efficiency. Our results suggest the feasibility of CIGS as a photocathode for biphotoelectrochemical water splitting.     

Aerosol-derived Ni(1-x)Zn(x) electrocatalysts for direct hydrazine fuel cells

This article reports the synthesis and performance of unsupported Ni(1-x)Zn(x) electrocatalysts for the oxidation of hydrazine in alkaline media. Characterization of these catalysts was achieved using XRD, SEM, and TEM to confirm phase compositions, crystal structures, and morphologies. High performance was observed for the α-Ni(0.87)Zn(0.13) and β(1)-Ni(0.50)Zn(0.50) electrocatalysts with an onset potential of -0.15 V (vs. RHE) and a mass activity of 4000-3800 A g(cat)(-1) at 0.4 V (vs. RHE), respectively. Additionally, in situ IRRAS studies were conducted to understand the mechanism of oxidation. These results demonstrate the feasibility of Ni(1-x)Zn(x) catalysts for direct hydrazine anionic fuel cells.     

Unusual physical and chemical properties of Cu in Ce(1-x)Cu(x)O(2) oxides

The structural and electronic properties of Ce(1-x)Cu(x)O(2) nano systems prepared by a reverse microemulsion method were characterized with synchrotron-based X-ray diffraction, X-ray absorption spectroscopy, Raman spectroscopy, and density functional calculations. The Cu atoms embedded in ceria had an oxidation state higher than those of the cations in Cu(2)O or CuO. The lattice of the Ce(1)(-x)Cu(x)O(2) systems still adopted a fluorite-type structure, but it was highly distorted with multiple cation-oxygen distances with respect to the single cation-oxygen bond distance seen in pure ceria. The doping of CeO(2) with copper introduced a large strain into the oxide lattice and favored the formation of O vacancies, leading to a Ce(1-x)Cu(x)O(2-y) stoichiometry for our materials. Cu approached the planar geometry characteristic of Cu(II) oxides, but with a strongly perturbed local order. The chemical activities of the Ce(1-x)Cu(x)O(2) nanoparticles were tested using the reactions with H(2) and O(2) as probes. During the reduction in hydrogen, an induction time was observed and became shorter after raising the reaction temperature. The fraction of copper that could be reduced in the Ce(1-x)Cu(x)O(2) oxides also depended strongly on the reaction temperature. A comparison with data for the reduction of pure copper oxides indicated that the copper embedded in ceria was much more difficult to reduce. The reduction of the Ce(1-x)Cu(x)O(2) nanoparticles was rather reversible, without the generation of a significant amount of CuO or Cu(2)O phases during reoxidation. This reversible process demonstrates the unusual structural and chemical properties of the Cu-doped ceria materials.     

Effects of thermal annealing on the structural and optical properties of Mg(x)Zn(1-x)O nanocrystals

Mg(x)Zn(1-x)O ternary alloy nanocrystals with hexagonal wurtzite structures were fabricated by using the sol-gel method. X-ray diffraction patterns, UV-vis absorption spectra, and photoluminescence spectra were used to characterize the structural and optical properties of the nanocrystals. For as-prepared nanocrystals, the band gap increases with increasing Mg content. Weak excitonic emission with strong deep-level emission related to oxygen vacancy and interface defects is observed in the photoluminescence spectra at room temperature. Thermal annealing in oxygen was used to decrease the number of defects and to improve the quality of the nanocrystals. In terms of XRD results, the grain sizes of nanocrystals increase with increasing annealing temperature and the lattice constants of alloy are smaller than those of pure ZnO. The band gap becomes narrower with increasing annealing temperature. For Mg(x)Zn(1-x)O nanocrystals (x=0.03-0.15) annealed at temperatures ranging from 500 to 1000 degrees C, intense near-band-edge (NBE) emissions and weak deep-level (DL) emissions are observed. Consequently, the quality of Mg(x)Zn(1-x)O nanocrystals can be improved by thermal annealing.     

Cation ordering in natural and synthetic (Cu(1-x)Zn(x))(2)CO(3)(OH)(2) and (Cu(1-x)Zn(x))(5)(CO(3))(2)(OH)(6)

In the present paper we report combined experimental and theoretical studies of the UV-vis-NIR spectra of the mineral compounds malachite, rosasite, and aurichalcite and of the precursor compounds for Cu/ZnO catalysts. For the copper species in the minerals the crystal field splitting and the vibronic coupling constants are estimated using the exchange charge model of the crystal field accounting for the exchange and covalence effects. On this basis the transitions responsible for the formation of the optical bands arising from the copper centers in minerals are determined and the profiles of the absorption bands corresponding to these centers are calculated. The profiles of the absorption bands calculated as a sum of bands of their respective Cu species are in quite good agreement with the experimental data. In agreement with crystal chemical considerations, the Zn ions were found to be preferentially located on the more regular, i.e., less distorted, octahedral sites in zincian malachite and rosasite, suggesting a high degree of metal ordering in these phases. This concept also applies for the mineral aurichalcite, but not for synthetic aurichalcite, which seems to exhibit a lower degree of metal ordering. The catalyst precursor was found to be a mixture of zincian malachite and a minor amount of aurichalcite. The best fit of the optical spectrum is obtained assuming a mixture of contributions from malachite (0% Zn) and rosasite (38% Zn of [Zn + Cu]), which is probably due to the intermediate Zn content of the precursor (30%).     

Synthesis of shape-controlled monodisperse wurtzite CuIn(x)Ga(1-x)S2 semiconductor nanocrystals with tunable band gap

Monodisperse wurtzite CuIn(x)Ga(1-x)S(2) nanocrystals have been synthesized over the entire composition range using a facile solution-based method. Depending on the chemical composition and synthesis conditions, the morphology of the nanocrystals can be controlled in the form of bullet-like, rod-like, and tadpole-like shapes. The band gap of the nanocrystals increases linearly with increasing Ga concentration, with band gap values for the end members being close to those observed in the bulk. Colloidal suspensions of the nanocrystals are attractive for use as inks for low-cost fabrication of thin film solar cells by spin or spray coating.     

Photoluminescence and Raman scattering from catalytically grown Zn(x)Cd(1-x)Se alloy nanowires

Zn(x)Cd(1-x)Se alloy nanowires, with composition x = 0, 0.2, 0.5, 0.7, and 1, have been successfully synthesized by a chemical vapor deposition (CVD) method assisted with laser ablation. The as-synthesized alloy nanowires, 60-150 nm in diameter and several tens of micrometers in length, complied with a typical vapor-liquid-solid (VLS) growth mechanism. The Zn(x)Cd(1-x)Se nanowires are single crystalline revealed from high-resolution transmission electron microscopic (HRTEM) images, selected area electron diffraction (SAED) patterns, and X-ray diffraction (XRD) measurement. Compositions of the alloy nanowires can be adjusted by varying the precursor ratios of the laser ablated target and the CVD deposition temperature. Crystalline structures of the Zn(x)Cd(1-x)Se nanowires are hexagonal wurtzite at x = 0, 0.2, and 0.5 with the [0 1 -1 0] growth direction and zinc blende at x = 0.7 and 1 with the [1 -1 1] growth direction. Energy gaps of the Zn(x)Cd(1-x)Se nanowires, determined from micro-photoluminescence (PL) measurements, change nonlinearly as a quadratic function of x with a bowing parameter of approximately 0.45 eV. Strong PL from the Zn(x)Cd(1-x)Se nanowires can be tuned from red (712 nm) to blue (463 nm) with x varying from 0 to 1 and has demonstrated that the alloy nanowires have potential applications in optical and sensory nanotechnology. Micro-Raman shifts of the longitudinal optical (LO) phonon mode observed in the Zn(x)Cd(1-x)Se nanowires show a one-mode behavior pattern following the prediction of a modified random element isodisplacement (MREI) model.     

Local structure of actinide dioxide solid solutions Th(1-x)U(x)O2 and Th(1-x)Pu(x)O2

Extended X-ray absorption fine structure (EXAFS) has been utilized to investigate the local atomic structure around Th, U, and Pu atoms in polycrystalline mixed dioxides Th(1-x)M(x)O2 (with M = U, Pu) for x ranging from 0 to 1. The composition dependence of the two first-coordination-shell distances was measured throughout the entire composition range for both solid solutions. The first-shell distances vary slightly across the solid-solution composition with values close to those of the pure dioxide parents, indicating a bimodal cation-oxygen distribution. In contrast, the second-shell distance varies strongly with composition, with values close to the weighted amount average distances. Nevertheless, in both systems, the lattice cell parameters, deduced from the first- and second-shell bond determined by EXAFS, are very close to those measured from X-ray diffraction (XRD). They vary linearly with composition, accurately following Vegard's law.