Ion beam induced atomic transport in bilayer systems

Atomic transport in ion beam mixed Co/Pt and Pd/Au bilayer systems have been studied from the shifts of maker layers in Rutherford backscattering spectroscopy. Thin layers (1 nm) of marker (Pd for Co/Pt and Ni for Pd/Au) were embedded as markers at each interfaces. 80 keV Ar⁺ was used to irradiate the marker samples at the temperature range between 90 and 600 K. The Co/Pt system shows isotropic atomic transport (J_Co/J_Pt∼1.1) at low temperatures and anisotropic atomic transport (J_Co/J_Pt∼5.0) at high temperatures. Meanwhile, the Pd/Au system shows near isotropic atomic transport (J_Pd/J_Au∼1.2) at all temperatures examined. These results were discussed in terms of the activation energies for the normal impurity diffusion, cohesive energy difference, and the vacancy migration energy. Atomic transport in thermal spike regime is closely related with the activation energy for normal impurity diffusion. In radiation enhanced diffusion regime, the cohesive energy and/or the vacancy migration energy plays a dominant role for the atomic transport.     

Investigation of silicon doped by zinc ions with a large dose

The formation of nanoparticles in СZn-Si(100) implanted with ⁶⁴Zn⁺ ions using a dose of 5 × 10¹⁶ cm^–2 and an energy of 50 keV at room temperature with subsequent thermal processing in oxygen at temperatures ranging from 400 to 900°C is studied. The surface topology is investigated with scanning electron (in the secondary emission mode) and atomic force microscopes. The structure and composition of the near-surface silicon layer are examined using a high-resolution transmission electronic microscope fitted with a device for energy dispersive microanalysis. An amorphized near-surface Si layer up to 130 nm thick forms when zinc is implanted. Amorphous zinc nanoparticles with an average size of 4 nm are observed in this layer. A damaged silicon layer 50 nm thick also forms due to radiation defects. The metallic zinc phase is found in the sample after low-temperature annealing in the range of 400–600°C. When the annealing temperature is raised to 700°C, zinc oxide ZnO phase can form in the near-surface layer. The complex ZnO · Zn₂SiO₄ phase presumably emerges at temperatures of 800°C or higher, and zinc-containing nanoparticles with lateral sizes of 20–50 nm form on the sample’s surface.     

Ion beam synthesis and investigation of nanocomposite multiferroics based on barium titanate with 3d metal nanoparticles

Samples of nanocomposite multiferroics have been synthesized by implantation of Co⁺, Fe⁺, and Ni⁺ ions with an energy of 40 keV into ferroelectric barium titanate plates to doses in the range (0.5–1.5) × 10¹⁷ ions/cm². It has been found that nanoparticles of metallic iron, cobalt, or nickel are formed in the barium titanate layer subjected to ion bombardment. With an increase in the implantation dose, the implanted samples sequentially exhibit superparamagnetic, soft magnetic, and, finally, strong ferromagnetic properties at room temperature. The average sizes of ion-synthesized 3d-metal nanoparticles vary in the range from 5 to 10 nm depending on the implantation dose. Investigation of the orientation dependence of the magnetic hysteresis loops has demonstrated that the samples show a uniaxial (“easy plane”) magnetic anisotropy typical of thin granular magnetic films. Ferromagnetic BaTiO₃: 3d metal samples are characterized by a significant shift of the ferromagnetic resonance signal in an external electric field, as well as by a large (in magnitude) magnetodielectric effect at room temperature. These results indicate that there is a strong magnetoelectric coupling between the ferroelectric barium titanate matrix and ion-synthesized nanoparticles of magnetic metals.     

Synthesis,characterization, and electrochemical performance of nitrogen-modified Pt–Fe alloy nanoparticles supported on ordered mesoporous carbons

A method has been demonstrated to synthesize nitrogen-modified Pt–Fe alloyed nanoparticles (9.2–11.3 nm) supported on ordered mesoporous carbon (Pt _x Fe_100?x N/OMC), which is fabricated by a conventional wet chemical synthesis of Pt–Fe alloyed nanoparticles and followed by carbonization of the nanoparticles with tetraethylenepentamine as nitrogen chelating agent. Among these electrocatalysts, the Pt₃₀Fe₇₀N/OMC has highly catalytic activity for the oxygen reduction reaction (ORR) with significantly enhanced methanol tolerance as well. Combining the results from X-ray diffraction and X-ray absorption spectroscopy, it can be observed that Pt metal in the Pt₃₀Fe₇₀N/OMC is present in the outer shell of Pt–Fe alloys with face-centered cubic crystalline structure. By X-ray photoelectron spectroscopy, the nitrogen-modified Pt surface of Pt₃₀Fe₇₀N/OMC exhibits significant selectivity toward the ORR in the presence of methanol. This enhancement of methanol tolerance could be attributed to the inhibition of methanol adsorption resulting from the modification of the Pt surface with nitrogen.     

Preparation of (As x Co3−x O4)(x=0–0.024) nanoparticles by rheological phase reaction method

Nanoparticles of a series of arsenic–cobalt mixed valency spinel oxides of theoretical formula As _x Co_3?x O₄, (x=0, 0.005, 0.01, 0.015, 0.024) have been successfully prepared by the rheological phase reaction and the pyrolysis method. The products were characterized by X-ray powder diffraction, scanning electron microscope, thermogravimetric analysis and simultaneous differential thermal analysis. Calcination of the precursor at 500 ^°C resulted in the formation of arsenic-doped cobalt oxide nanoparticles of 48 nm in crystal size. The effect of the calcination temperature on the crystal size of arsenic-doped Co₃O₄ was discussed.     

Kaonic atoms measurements at the DAΦNE accelerator

Radioactive ⁵⁷Mn⁺(T _1/2?= 1.5 min) ions have been implanted at the ISOLDE facility at CERN with 60 keV energy to fluences <10¹²/cm² into p-type Si_1???x Ge _x (x < 0.1) single crystals held at 300–600 K. The implantation and annealing processes result in the majority of the implanted Mn ions occupying substitutional lattice sites. In the subsequent ⁵⁷Mn nuclear β ^???-decay to the 14.4 keV Mössbauer state of ⁵⁷Fe (T _1/2?= 100 ns), an average recoil energy of 40 eV is imparted to the ⁵⁷Fe daughter atoms which results in a large fraction being expelled into tetrahedral interstitial sites and the creation of a vacancy. The remainder occupies substitutional sites. This technique of recoil production of ^57m Fe_I thus allows for the study of the diffusion characteristics of interstitial Fe. From the temperature dependent line broadening, the activation energies have been determined and decrease with increasing Ge concentration which contributes significantly to the increase of the jump frequency. A similar result has been obtained in n-type SiGe but there the values for the activation energies were much higher.     

Modification of the magnetic properties of polyimide films by cobalt ion implantation

The magnetic characteristics of polyimide films implanted with Co⁺ ions with an energy of 40 keV in the dose range D = 2.50 × 10¹⁶?1.25 × 10¹⁷ cm^?2 at ion current densities j = 4, 8, and 12 μA/cm² have been investigated. It has been shown that, at implantation doses of less than 5 × 10¹⁶ cm^?2, the superparamagnetic properties of modified samples are described by the Langevin equation. At higher doses, there is an intercluster interaction. It has been found that, with an increase in the ion current, the cluster size decreases. The sizes of the formed clusters are determined and vary in the range from 3.9 to 11.0 nm, depending on the implantation dose.     

Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.     

Phase analysis in α-Fe after high-dose Si ion implantation by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS)

Si⁺ ions of 50 keV in energy were implanted into α-Fe (95% ⁵⁷Fe) with a nominal dose of 5 × 10¹⁷ cm^?2 at 350°C. The depth distribution of the Fe-Si phases formed by ion implantation after annealing at 300 and 400°C for 1 h was studied quantitatively by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS). Ordered Fe₃Si and ε-FeSi was observed.     

FMR and TEM Studies of Co and Ni Nanoparticles Implanted in the SiO<Subscript>2</Subscript> Matrix

Fused silica plates have been implanted with 40 keV Co⁺ or Ni⁺ ions to high doses in the range of (0.25–1.0) × 10¹⁷ ions/cm², and magnetic properties of the implanted samples have been studied with ferromagnetic resonance (FMR) technique supplemented by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. The high-dose implantation with 3d-ions results in the formation of cobalt and nickel metal nanoparticles in the irradiated subsurface layer of the SiO₂ matrix. Co and Ni nanocrystals with hexagonal close packing and face-centered cubic structures have a spherical shape and the sizes of 4–5 nm (for cobalt) and 6–14 nm (for nickel) in diameter. Room-temperature FMR signals from ensembles of Co and Ni nanoparticles implanted in the SiO₂ matrix exhibit an out-of-plane uniaxial magnetic anisotropy that is typical for thin magnetic films. The dose and temperature dependences of FMR spectra have been analyzed using the Kittel formalism, and the effective magnetization and g-factor values have been obtained for Co- and Ni-implanted samples. Nonsymmetric FMR line shapes have been fitted by a sum of two symmetrical curves. The dependences of the magnetic parameters of each curve on the implantation dose and temperature are presented.     

Crystal structure and compressibility of FePt nanoparticles under high pressures and high temperatures

FePt nanoparticles with an average grain size of 4 nm and equiatomic composition of Fe and Pt was studied under high pressures in a diamond anvil cell to investigate its structural stability and compressibility under high compression. The ambient pressure disordered face-centered-cubic (fcc) phase was found to be stable to the highest pressure of 61 GPa (compression of 15%) at room temperature. The compression of Fe₅₀Pt₅₀ nanoparticles is closer to the compression curve for pure Pt and shows lower compressibility than what would be expected for a bulk Fe₅₀Pt₅₀ alloy. The nanoparticle character of Fe₅₀Pt₅₀ sample is maintained to the highest pressure without any observable grain coarsening effects at ambient temperature. Laser heating of disordered fcc phase at 32 GPa to a temperature of 2000 K resulted in a phase transformation to a microcrystalline phase with the distorted fcc structure.     

Electron Paramagnetic Resonance and Electron Spin Echo Studies of Co2+ Coordination by Nicotinamide Adenine Dinucleotide (NAD+) in Water Solution

Co²⁺ binding to the nicotinamide adenine dinucleotide (NAD⁺) molecule in water solution was studied by electron paramagnetic resonance (EPR) and electron spin echo at low temperatures. Cobalt is coordinated by NAD⁺ when the metal is in excess only, but even in such conditions, the Co/NAD⁺ complexes coexist with Co(H₂O)₆ complexes. EPR spin-Hamiltonian parameters of the Co/NAD⁺ complex at 6 K are g _z  = 2.01, g _x  = 2.38, g _y  = 3.06, A _z  = 94 × 10^?4 cm^?1, A _x  = 33 × 10^?4 cm^?1 and A _y  = 71 × 10^?4 cm^?1. They indicate the low-spin Co²⁺ configuration with S = 1/2. Electron spin echo envelope modulation spectroscopy with Fourier transform of the modulated spin echo decay shows a strong coordination by nitrogen atoms and excludes the coordination by phosphate and/or amide groups. Thus, Co²⁺ ion is coordinated in pseudo-tetrahedral geometry by four nitrogen atoms of adenine rings of two NAD⁺ molecules.     

Structural relaxation in the CoP-CoNiP system upon low-temperature annealing

The atomic structure of alloys in the CoP-CoNiP system in the initial state and its behavior upon low-temperature annealing is investigated. It is shown that structural relaxation starts at temperatures of 150–200°C and results in local atomic ordering at the network boundaries. Crystals 2–5 nm in size start to undergo nucleation at the boundaries of structural heterogeneities when heated further to 250–300°C. The nanocrystal structure corresponds to the metastable phase delta-Co (ICSD 42684) and the unknown phase Co_{1 ? x} P _x . The estimated diffusion coefficient for CoP alloy is 10^?14 m² s^?1, according to the experimental data.     

193Ir Mössbauer study of bimetallic platinum-iridium catalysts

Using the 73.0 keV Mössbauer resonance in¹⁹³Ir, the chemical form of iridium in bimetallic Pt?Ir catalysts supported on amorphous silica has been determined after ionic co-exchange, calcination and reduction in hydrogen. The compositions of the highly dispersed bimetallic Pt_1?xIr_x clusters as determined from the measured isomer shifts reveal a strong tendency for segregation of iridium and platinum.     

Structure of self-implanted silicon annealed under enhanced hydrostatic pressure

Implantation of any ions at a sufficiently high dose and energy (E) into single-crystalline Si leads to the creation of amorphous Si (aSi), with damages peaking near the projected range (R _p) of implanted species. Enhanced hydrostatic pressure (HP) at a high temperature (HT) influences the recrystallization of aSi. The structure of self-implanted Czochralski silicon (Si⁺ dose, D=2×10¹⁶ cm^?2, E=150 keV, R _p=0.22 μm) processed for 5 h at 1400 or 1520 K under HPs up to 1.45 GPa was investigated by X-ray, secondary ion mass spectrometry and photoluminescence methods. The implantation of Si produces vacancies (V) and self-interstitials (Si_i). Vacancies and Si_is form complex defects at HT–HP, also with contaminants (e.g. oxygen, always present in Czochralski silicon). The mobility and recombination of V and Si_i as well as the kinetics of recrystallization are affected by HP, thus processing at HT–HP affects the recovery of aSi.     

Structural investigations of synthetic ferrihydrite nanoparticles doped with Si

X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoacoustic/Fourier transform infrared spectroscopy (PA/FTIR) are employed to monitor the changes in the structural aspects of two-line ferrihydrite (FHYD) nanoparticles doped with silica viz. Si_xFe_1−xOOH·nH₂O for x=0, 0.02, 0.05, 0.10, 0.15, 0.20, 0.26, 0.40 and 0.50. In XRD, crystallinity decreases and d-spacings increase with increase in x. TEM studies show that the particle size increases systematically with increase in x, from 3.7 nm for x=0 to 5.7 nm for x=0.50. In PA/FTIR, two new bands appear, band F near 3700 cm⁻¹ identified with the surface Si-O-H group and band A near 900 cm⁻¹ identified with Si-O-Fe group, which shifts to higher wavenumbers with increase in x. These results are used to propose a model in which doped Si⁴⁺ ions do not displace Fe³⁺ ions but are chemisorbed on the FHYD surface making a shell of silica for higher doping. This model is consistent with the reported changes in the magnetic properties of FHYD with Si doping.     

Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation

Comparative analysis of the structural and optical properties of composite layers fabricated with the aid of implantation of single-crystalline silicon (c-Si) using Ge⁺ (40 keV/1 × 10¹⁷ ions/cm²) and Ag⁺ (30 keV/1.5 × 10¹⁷ ions/cm²) ions and sequential irradiation using Ge⁺ and Ag⁺ ions is presented. The implantation of the Ge⁺ ions leads to the formation of Ge: Si fine-grain amorphous surface layer with a thickness of 60 nm and a grain size of 20–40 nm. The implantation of c-Si using Ag⁺ ions results in the formation of submicron porous amorphous a-Si structure with a thickness of about 50 nm containing ion-synthesized Ag nanoparticles. The penetration of the Ag⁺ ions in the Ge: Si layer stimulates the formation of pores with Ag nanoparticles with more uniform size distribution. The reflection spectra of the implanted Ag: Si and Ag: GeSi layers exhibit a sharp decrease in the intensity in the UV (220–420 nm) spectral interval relative to the intensity of c-Si by more than 50% owing to the amorphization and structuring of surface. The formation of Ag nanoparticles in the implanted layers gives rise to a selective band of the plasmon resonance at a wavelength of about 820 nm in the optical spectra. Technological methods for fabrication of a composite based on GeSi with Ag nanoparticles are demonstrated in practice.     

Sputter damage in Si surface by low energy Ar+ ion bombardment

The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar⁺ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar⁺ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively.     

Giant temperature coefficient of resistance in Co-doped ZnO thin films

A novel high-performance thermistor material based on Co-doped ZnO thin films is presented. The films were deposited by the pulsed laser deposition technique on Si (111) single-crystal substrates. The structural and electronic transport properties were correlated as a function of parameters such as substrate temperature and Co-doped content for Zn_1?x Co _x O (x=0.005,0.05,0.10 and 0.15) to prepare these films. The Zn_1?x Co _x O films were deposited at various substrate temperatures between 20 and 280 °C. A value of 20 %/K for the negative temperature coefficient of resistance (TCR) with a wide range near room temperature was obtained. It was found that both TCR vs. temperature behavior and TCR value were strongly affected by cobalt doping level and substrate temperature. In addition, a maximal TCR value of over 20 %?K^?1 having a resistivity value of 3.6 Ω?cm was observed in a Zn_0.9Co_0.1O film near 260 °C, which was deposited at 120 °C and shown to be amorphous by X-ray diffraction. The result proved that the optimal Co concentration could help us to achieve giant TCR in Co-doped ZnO films. Meanwhile, the resistivities of the films ranged from 0.4 to 270 Ω?cm. A Co-doped ZnO/Si film is a strong candidate of thermometric materials for non-cooling and high-performance bolometric applications.     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金