Improved electrical and magnetic transport properties of La0.8Ba0.2MnO3 thin films by oxygen annealing

正Dear Editors,The properties of mixed-valence manganites are sensitive to the synthesis conditions[1].For oxide films grown by pulsed laser deposition(PLD),the physical properties are affected obviously by the growth oxygen pressure and annealing treatment[2-5].Using the PLD method,manganite oxides are usually grown at different oxygen pressures to investigate the     

Influence of pulse laser energy on laser-induced voltage in La2/3Ca1/3MnO3:Ag0.04 films

With various pulse laser energy (E _pulse), La_2/3Ca_1/3MnO₃:Ag _x [La_1?x Ca _x MnO₃ (LCMO):Ag _x , x = 0.04, wt%] films were prepared on vicinal cut LaAlO₃ substrates by the pulsed laser deposition technique. It is found that laser-induced voltage (LIV) of LCMO:Ag_0.04 films was improved and enhanced by E _pulse. With E _pulse increasing, figure of merit (F _m) and anisotropic Seebeck coefficient (ΔS) of LCMO:Ag_0.04 films reached the maximum value of 109.8 mV/ns and 0.29 μV/K for E _pulse = 300 mJ. The results suggested that the LIV enhancement of LCMO:Ag_0.04 films was due to Seebeck tensor improvement, the high crystallization and oxygen balance in LCMO:Ag_0.04 films.     

Self-assembled antidots in La2/3Sr1/3MnO3 thin films

In this work, we report on the controlled fabrication of a self-assembled network of antidots in highly epitaxial La_2/3Sr_1/3MnO₃ thin films grown on top of SrTiO₃ (1 0 0) oriented substrates. To promote self-assembly process, it is fundamental to select a unique surface atomic termination of the STO substrates and the appropriate growth conditions. The evolution of the structural and magnetic properties as a function of deposition parameters is analyzed to clarify the growth mechanism leading to the formation of this self-assembled network of antidots. This morphology is of high interest envisaging a new route for the design and fabrication of oxide-based magnetoelectronic devices.     

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La2/3Ca1/3MnO3纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为Tc≈308K(近似为电阻峰值温度Tp);在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段(TTc时,ΔR/R＜0,即光电导效应.调制激光脉冲光响应实验发现,光致信号强度和温度及偏置电流之间存在非线性关系:光致电阻率增大信号极大值为偏置电流的二次函数,而极大值对应的温度和偏置电流成线性关系,同时,光响应有一个截止温度,并且存在最佳光响应偏置电流和温度条件.分析认为LCMO薄膜的光致电阻率变化特性和材料的eg↓自旋电子的状态以及与此相应的小极化子的形成有关.     

Photoluminescence probed minority processes in La2/3Sr1/3MnO3 thin films

La_2/3Sr_1/3MnO₃ thin films are studied with temperature variable photoluminescence (PL) spectroscopy. Two emission peaks are assigned to the minority carriers related transition processes. The temperature independent 2.526 eV peak is attributed to the charge transfer type inter-band transition, while the redshifted doublet peak around 1.686 eV to the spin flip process. Band structures are obtained within the density functional theory, which show the consistent band gaps with the PL data. The temperature dependence of the intensity of PL emission suggests that these minority carrier processes are relevant to polaron formation.     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO3(00l)单晶衬底上制备了La0.67Ba0.33MnO3薄膜,研究了CO2激光辐照对La0.67Ba0.33MnO3薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La0.67Ba0.33MnO3薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由"岛状"结构变为"平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属-绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La0.67Ba0.33MnO3薄膜的磁电性能的改善与优化密切相关.     

Colossal pressure-induced negative resistance change in La2/3Ca1/3MnO3 thin films

2/3 Ca_1/3MnO₃ thin films as a function of temperature from 4 to 300 K are studied. The application of external pressure increases the temperature of the metal–insulator transition (T_MI). For a film showing T_MI at about 177 K, a colossal change in resisitivity (R(0)-R(p))/R(p) qualitatively comparable to the magnetoresistance (R(0)-R(B))/R(B) around the transition temperature, is observed. However, this change for the film with high T_MI (267 K) is smaller by a factor of about 100. The increase of T_MI with pressure is intimately associated with the pressure-induced contraction and alignment of Mn-O-Mn bonds and the possible enhancement of the double-exchange interaction with pressure. Received: 11 September 1998/Accepted: 12 September 1998     

Laser-induced voltage (LIV) enhancement of La2/3Sr1/3MnO3 films with Ag addition

La_2/3Sr_1/3MnO₃:Ag _x (LSMO:Ag _x , x=0, 0.04, 0.08, 0.10, 0.20, 0.30) films were grown on vicinal cut LaAlO₃ (LAO) substrates by pulsed laser deposition technique (PLD). It is found that laser-induced voltage (LIV) of LSMO:Ag _x films is improved and enhanced by Ag addition. With x increasing, figure of merit (F _m ) and anisotropic Seebeck coefficient (ΔS) of LSMO:Ag _x (x=0.08) films reach the maximum values of 28.25 mV/ns and 0.38 μV/K, respectively. The results suggest that the LIV enhancement of LSMO:Ag _x films is due to the anisotropy of the Seebeck tensor, which is produced by long range cooperative Jahn–Teller distortions with Ag addition.     

Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates

Perovskite manganite La_2/3Ca_1/3MnO₃ thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal–insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature (T _P) have been fitted with the relation \( \rho = \rho_{0} + \rho_{2} T^{2} + \rho_{4.5} T^{4.5} \) , indicating that the electron–electron scattering affects the conduction of these materials. The high-temperature resistivity data (T > T _P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N (E _F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn–O–Mn bond angle, which decreases the double exchange coupling of Mn³⁺–O²–Mn⁴⁺ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.     

Colossal magnetoresistance effect in epitaxially grown La2/3Ca1/3MnO3 perovskite-like manganite thin films

We report in this work, study on colossal magnetoresistance (CMR) effect in epitaxial La_2/3Ca_1/3 MnO₃ thin films grown on SrTiO₃ (0 0 1) substrates by pulsed laser deposition (PLD) technique. The films were grown on as-received SrTiO₃ substrates and on SrTiO₃ substrates prepared by HF etching (Koster et al., Appl. Phys. Lett. 73 (1998) 2920; V. Leca et al., Wet etching methods for perovskite substrates, University of Twente, MESA+ Research Institute, Low Temperature Division). Two of the samples were annealed in different conditions to investigate the films heat treatment effect on electric and magnetic properties. Electrical resistance was done using the four-probe method at temperatures in the range of 2–375 K without a magnetic field and in an external field of 5 T applied in the film plane. Resistance-magnetic field (R vs. H) at 77 K for the two annealed samples was done in a 5 T sweep magnetic field. The surface morphology and structural information of the films were obtained using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. Secondary ion mass spectroscopy (SIMS) analysis was performed on the annealed samples to investigate any possible chemical reaction between La_2/3Ca_1/3MnO₃ thin films and SrTiO₃ substrate.     

Electrical and thermal properties of Pr2/3(Ba1−xCsx)1/3MnO3 manganites

Electrical and thermal properties of Pr_2/3(Ba_1?x Cs _x )_1/3MnO₃ (0 ≤ x ≤ 0.25) manganite perovskites are reported here. Two insulator-metal (I-M) transitions (T _P1 &T _P2) are observed in the electrical resistivity (ρ) of the pristine Pr_2/3Ba_1/3MnO₃ (PBMO) sample, and they are systematically shifted to lower temperatures with increasing Cs substitution. An upturn in ρ is noticed below 50 K in these perovskites, presumably due to the combined effect of weak localization, electron-electron and electron-phonon scattering. It is found that the absolute value of room-temperature thermoelectric power (TEP) gradually decreases with increasing Cs content, implying the annihilation of the charge carriers with doping. An analysis of the electrical resistivity and thermoelectric power data indicates that the paramagnetic insulating state above T _P1 is governed by the small polaron hopping due to a non-adiabatic process. It is argued that the electron-magnon scattering processes are responsible for low temperature metallic behavior of TEP. A distinct specific heat peak below T _P1 is observed, attributed to the magnetic ordering, and its broadening with Cs-doping corresponds to the increase of magnetic inhomogeneity. Further, the temperature variation of thermal conductivity and the low temperature plateau in κ has been associated with the delocalization of Jahn-Teller polarons and transition from Umklapp scattering to a defect-limited scattering, respectively.     

Microstructure and electrical properties of textured Sr0.51Ba0.48La0.01Nb2O6 thin films

Sr_0.51Ba_0.48La_0.01Nb₂O₆ (SBLN) thin films were prepared on platinized silicon substrates by pulsed laser deposition (PLD) combined with annealing technique. The preferred orientation, surface morphology, composition, and interfacial properties of the SBLN thin films were characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and automatic spreading resistance measurement. The ferroelectric properties were confirmed by P - E hysteresis loops. The frequency variation of the dielectric constant was measured as well.     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Growth and characterization of La2/3Ca1/3MnO3 thin films on ‘silicon on insulator’ substrates

La_2/3Ca_1/3MnO₃ thin films have been grown on SrTiO₃, LaAlO₃, and yttria-stabilized zirconia buffered silicon-on-insulator (SOI) substrates by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved on the SrTiO₃ and LaAlO₃ substrates, a coexistence of the cube-on-cube and cube-on-diagonal epitaxy was observed in the the manganite films on SOI substrates. Besides the intrinsic four-fold magnetocrystalline anisotropy, a uniaxial anisotropy also exists in the films, which is determined by the demagnetization field and the mismatch-induced strain. A tensile strain leads to an easy plane, while a compressive strain favors an easy axis. The different magnetization configurations in the films on different substrates are the reason for their varied transport and magnetic properties. Due to a combined effect of these magnetic anisotropy, the magnetization in the two crystallography domains in the film on SOI tends to lie in the film plane but align in their respective easy axes. There are always large spin angles across the domain boundaries. As a result, a quite large low-field magnetoresistance (LFMR) based on spin-dependent tunnelling was observed. It shows a resistance change of ∼20% at 50 K in a magnetic field ∼700 Oe, which is promising for real applications. PACS 75.47.Lx; 72.25.Mk     

Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Ag掺杂的La0.67Pb0.33MnO3薄膜中激光感生热电电压效应

采用脉冲激光沉积法在倾斜LaAlO3衬底上制备了Ag掺杂的La0.67Pb0.33MnO3(LPMO)系列薄膜,发现该类薄膜中有激光感生热电电压(LITV)效应.随着掺Ag量x(x为Ag的质量与LPMO的质量之比)从0.00增加到0.10,LPMO薄膜中的LITV信号的响应时间先递减后递增,但始终小于未掺Ag的薄膜,掺Ag量x=0.06时响应时间最小.研究发现LPMO薄膜存在一个最佳厚度,在这一厚度下可使得LITV信号的峰值电压、响应时间分别达到最大和最小.与相同掺Ag量的La0.67Ca0.33MnO3薄膜相比,LPMO薄膜中的LITV信号有更小的响应时间.     

Magnetic, electrical, and crystallographic properties of thin La1−x SrxMnO3 films

A study is reported of the magnetic, electrical, and crystallographic properties of La_1−x Sr_xMnO₃ (0.15⩽x⩽0.23) epitaxial films grown on single-crystal substrates of (001)ZrO₂(Y₂O₃) having the fluorite structure and (001)LaAlO₃ having the perovskite structure. It was found that films with close compositions for x=0.15 and 0.16, grown on different substrates, have different properties, namely, the film on a fluorite substrate is semiconducting and has a coercive strength 30 times that of the film on a perovskite substrate; the temperature dependence of electrical resistance of the latter film has a maximum around the Curie point T _C and follows metallic behavior for T<T _C. These differences are explained as due to different structures of the films. The x=0.23 film on the perovskite substrate has been found to exhibit a combination of giant magnetoresistance at room temperature with a resistance of ≈300 Ω which is useful for applications. The maxima in resistance and absolute value of negative magnetoresistance are accounted for by the existence of two-phase magnetic states in these films. Fiz. Tverd. Tela (St. Petersburg) 40, 290–294 (February 1998)     

Structure and magnetic properties of CrN thin films on La0.67Sr0.33MnO3

High crystalline quality CrN thin films have been grown on La_0.67Sr_0.33MnO₃ (LSMO) templates by molecular beam epitaxy. The structure and magnetic properties of CrN/LSMO heterojunctions are investigated combining with the experiments and the first-principles simulation. The Nėel temperature of the CrN/LSMO samples is found to be 281 K and the saturation magnetization of CrN/LSMO increases compared to that of LSMO templates. The magnetic property of CrN/LSMO heterostructures mainly comes from Cr atoms of (001) CrN and Mn atoms of (001) LSMO. The (001) LSMO induces and couples the spin of the CrN sublattice at CrN/LSMO interface.     

Study of the thermal properties of Ba1−x SrxTiO3 thin films by the ac hot-probe method

The heat capacity and heat conductivity of Ba_1−x Sr_xTiO₃ (x=0.2, 0.5, 0.8) polycrystalline films 1.5–2.0 μm thick on a massive substrate have been studied by the ac hot-probe method for three-layer systems (conducting probe-dielectric film-substrate) at temperatures ranging from 100 to 400 K. It is found that the thermal properties exhibit anomalies in the phase transition range. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 10, 2000, pp. 1839–1841. Original Russian Text Copyright ? 2000 by Davitadze, Kravchun, Strukov, Taraskin, Gol’tsman, Lemanov, Shul’man.