一种新型二维X射线探测器

本文建立一种新型X射线探测器,它是一种矩阵寻址方式的二维探测器,由两块玻璃〖ZH(〗基板组成,分别称作阴极板和阳极板阴极板内侧镀有行电极和X射线阴级(例如CsI),阳极板上有寻址电极、障壁两块基板对位封接,使行电极与寻址电极互相垂直封接后先抽高真空,然后充入氩气与CO2混合气体本探测器具有薄、轻、图象无畸变并可以利用PDP显示器件的工艺制作大尺寸器件及大量制造等优点     

光谱匹配在X光机设计中的应用

将X射线成像技术和微光成像技术相结合,设计了组合新型的X射线影像增强系统.为了得到满意的成像性能,在设计前研究了Gd2O2S∶Tb和CaWO4两种X射线屏和Super S251和Super S252两种光电阴极之间的四种屏－光电阴极组合的光谱匹配特征,对应的光谱匹配系数值分别为0.644,0.761,0.369,0.571.以光谱匹配曲线及光谱匹配系数计算数据为理论依据,最终选择Gd2O2S∶Tb X射线屏和Super S252光电阴极的组合作为该新型X射线影像增强系统的主要器件,得到了成像性能令人满意的X光机.     

可微调非粘结光锥阵列耦合数字X射线探测器

光锥阵列耦合数字X射线探测器是获得大面积高分辨率数字X射线成像的重要途径,但目前通常采用粘结固定的方式实现光锥阵列各小端面与对应图像传感器芯片之间的耦合.为克服粘结耦合方式的不足,设计并实现了一种可微调的非粘结2×2光锥阵列耦合数字X射线探测器.该方案能够在调节空间受光锥阵列结构和硬件电路板尺寸限制,特别是竖直方向板间距离仅40mm的情况下,通过独特设计的水平和竖直调节机构在同一个调节层上对四块数据采集板分别进行多维度调节.利用四块数据采集板与数据传输板相互分立的特点,设计了基于ARM+4FPGA的嵌入式以太网多CMOS芯片传输数据采集系统,所实现的X射线探测器成像面积达100mm×100mm,能够完成可微调的非粘结耦合和多CMOS芯片的图像数据采集.     

杂化X射线探测器的优势与进展（英文）

占主导地位的X射线探测器主要分为直接半导体型X射线探测器和间接闪烁体型X射线探测器。近年来，杂化X射线探测器通过结合半导体和闪烁体材料的优势而出现。作为活性层的混合半导体和闪烁体导致了不同的工作机制。两相之间电荷/能量转移可以避免闪烁体的余辉效应。并且闪烁体的存在也优化了半导体材料的性能。本文总结了杂化X射线探测器的机制、进展和协同效应，以突出杂化X射线探测器的优势。根据不同的工作机制和各自的特点，我们详细讨论了三种类型的杂化X射线探测器。最后，我们对杂化X射线探测器存在的局限性和未来的发展方向进行了展望。     

X射线的电离剂量率测量实验

结合Leybold教具公司生产的X射线装置通过测量平行板电容间的X射线电离离子剂量率使学生了解气体探测器的测量原理，继而了解X射线电离离子剂量率与管高压和管发射电流的关系．     

CsI光阴极在10-100 keV X射线能区的响应灵敏度计算

为了满足10-100 keV高能X射线光电探测器研究的需要,对CsI光阴极在该能量范围的响应灵敏度进行了研究.基于高能量X射线光子与材料相互作用的物理过程,分析了康普顿散射等效应对CsI响应灵敏度的影响.推导了CsI的响应灵敏度与二次电子平均逃逸深度和光阴极厚度的关系式和二次电子平均逃逸深度与入射光子能量的关系式,计算了CsI在10-100 keV范围内的响应灵敏度,计算结果与实验测试数据相符,验证了分析与推导的可靠性.根据计算可以获得不同入射X射线能量下CsI光阴极的最佳厚度,从而为高能X射线光电探测器的设计优化提供了理论参考.     

一种激光驱动的超短X射线光源

 介绍一种可产生超短脉冲的新型X射线光源。它由多碱光电阴极、金靶及铍输出窗组成。当该X射线管的阴极受到强光照射时,产生光电子发射,并经电场加速后轰击金靶,产生连续谱的X射线轫致辐射,经铍窗输出。用超短的可见光脉冲驱动该光源,并借助X射线扫描相机测量了该管的X射线输出,获得了5ps的X射线脉冲。这种光源可方便地用来标定X射线扫描相机的时间分辨率,此种产生超短电子脉冲的方法也可在其他方面获得应用。     

化学气相沉积金刚石X射线探测器

 为得到一种对可见光不响应而在辐射探测范围内平响应的X射线探测器,研究了一种化学气相沉积金刚石X射线探测技术,以作为硅与真空X射线二极管探测技术的补充。首先对化学气相沉积金刚石进行品质检测,利用两种规格的金刚石集成制作出X射线探测器,之后在8 ps激光器装置上开展了探测器的时间响应等性能研究。实验结果表明:探测器系统前沿响应时间可达60 ps,半高全宽可达120 ps,与真空X射线二极管探测系统时间特性一致,可以满足ICF实验对X射线辐射测量的应用。     

用于高速摄影变象管的软X射线光电阴极

光阴极由衬底(包括介质阴极的导电基底)和光电发射膜构成。采用了聚丙烯、Formvar和Paylene三种有机薄膜作阴极衬底。建立了这些薄膜的制备技术。用一台自制的软X射线单色仪在277—7469ev光子能量范围内测量了这些薄膜的透过率。 研究了CsI、CsBr、Au和MgF₂四种光电阴极的光电发射特性和光电发射与阴极厚度的关系,找出了最佳阴极厚度。用软X射线单色仪在277—7469ev光子能量范围内测量了最佳厚度阴极的绝对量子效率,四种阴极最大值分别为4.50、2.90、0.25和0.12。我们还在同一阴极衬底上分区制备了四种阴极,在变象管荧光屏上比较其亮度,结果和测量的一致。 用LAB5型表面分析仪对CsI和Au阴极的光电子初能量分布作了测量,CsI阴极光电子初能量分布半高宽远小于Au。因此CsI是适用于高速摄影变象管比较理想的软X射线光电阴极。     

基于APD单光子探测器的光子到达时间标记精度研究EI北大核心CSCD

为了准确测量X射线脉冲星导航中的光子到达时间,提出了一种X射线探测器光子到达时间精度的测试系统,该系统主要由脉冲X射线发生器、任意波形发生器、雪崩光电二极管探测器和时间标记光子计数器组成。系统测量脉冲X射线发生器的控制脉冲信号与雪崩光电二极管探测器测量的输出信号之间的时间延迟,研究时间延迟的分布情况,该分布的标准差可以反映被测探测器的光子到达时间测量精度。实验结果显示,雪崩光电二极管探测器输出信号相比控制信号的时间延迟约9.03 ns,标准差为2.23 ns,即雪崩光电二极管探测器的光子到达时间精度为2.23 ns,表明其能够实现对X射线单光子的快时间响应与高精度标记。     

基于LC延迟电路的双层多丝正比室的研制

描述了为兰州放射性粒子束流线（RIBLL Ⅱ）上测量束流径迹而研制的一种基于LC延迟电路的双层多丝正比室（MWPC）。该探测器的探测灵敏面积为100 mm×80 mm,位置信号由阴极丝引出并通过LC延迟电路读出。探测器由两套完整的多丝正比室组成,每套的阳极丝夹在两层平行的阴极丝之间,阳极丝和阴极丝相互垂直。两套阴极丝相互垂直给出入射粒子的二维位置信息。为了增大感应信号以提高探测效率,将每套位置对应的阴极丝合并成一路接入LC延迟电路。用55Fe-5.9 keV X射线源均匀照射探测器的灵敏区域,测试表明其具有良好的位置灵敏一致性。用X射线源通过准直狭缝扫描整个探测器的灵敏区域,得到X,Y层的位置线性度均好于0.999;其位置分辨（σ）分别为199.9 μm和154.0 μm,目前,该探测器已成功用于RIBLL Ⅱ的实验中。A double-layer Multi-Wire Proportional Chamber (MWPC) with 100 mm×80 mm active area has been developed for Radioactive Ion Beam Line in Lanzhou(RIBLL Ⅱ). The position information has been obtained by a LC delay circuit readout method. Being called of double-layer MWPC, it is composed of two full MWPCs, each consists of an anode plane sandwiched between two parallel cathode planes, anode wires and cathode wires are perpendicular to each other. In order to improve the detection efficiency, the cathode wires of corresponding position are combined to enhance inductive signal. The cathode wires of two full MWPCs are orthogonally placed to give two coordinates of the incident particles. The sensitivity uniformity is also found to be relatively good and the position resolution of X, Y direction are measured to be 199.9 and 154.0 μm using a 55Fe-5.9 keV X ray, respectively. The position linearity of X, Y direction are as good as 0.999 for whole sensitive area of the detector. The detector has been used successfully on the experiment at RIBLL Ⅱ.     

Enhanced Coupling of Light from Organic Electroluminescent Device Using Diffusive Particle Dispersed High Refractive Index Resin Substrate

To improve light extraction from organic electroluminescent (EL) devices, we introduced a diffusive substrate with 25 μm thickness consisting of high refractive index resin and scattering particles. It is expected that the diffusive substrate with high refractive index matrix converts the waveguided emission into external emission from both glass substrate and indium-tin-oxide/organic layer. We used the ray tracing method to optimize the scattering effect and to verify the coupling out effect of the diffusive high refractive index substrate. With the use of the ray tracing calculation, an increase in the external emission up to a factor of 2.7 was expected compared to use of a common glass substrate. Experimentally, the coupling out effect of the diffusive high refractive index substrate strongly depended on the thickness of electron transporting layer (ETL) due to the well-known interference effect. The current efficiency increased by a factor of 1.3 for an organic EL device with a 60-nm-thick ETL and by a factor of 6.8 for one with a 120-nm-thick ETL.     

Application of Mn nano-flower sculptured thin films produced on interdigitated pattern as cathode and anode electrodes in field ionization gas sensor

The photolitography method was used for producing interdigitated configurations for cathode and anode electrodes of a field ionization gas sensor in which Mn helical nano-flowers with 3-fold symmetry were deposited using oblique angle deposition together with rotation of the substrate about its surface normal, with each rotation divided into six sections. These sections were alternately rotated at high and low speeds. Three different distances were chosen in the design between anode and cathode electrodes, namely 40, 100 and 200 μm. Physical structure and morphology of electrodes were studied by field emission scanning electron microscope and atomic force microscope analyses.The breakdown voltage of the system was studied for nitrogen, oxygen, argon, air and carbon mono-oxide gases. Investigations with these gases at different distances between anode and cathode and different gas pressures confirmed Paschen's Law. Results showed that at low pressures, decreasing the gap between electrodes increases the breakdown voltage. With fewer gas molecules between the electrodes the number of interactions between particles is reduced and higher energies are required for ionization of gas molecules. At high pressures, the breakdown voltage is decreased because of an increased number of molecular interactions. The sensor demonstrated good selectivity between the different gases and selectivity was enhanced with increasing gas pressure. A direct relationship was found at low pressures (e.g., 0.1 mbar) between the breakdown voltage and the gas ionization energy while at high pressures (e.g., 1000 mbar) this relationship was reversed.     

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been successfully fabricated by conventional photolithography, screen printing and electrophoretic deposition (EPD). In this structure, cathode electrodes and ITO arrays linked with gate electrodes were interdigitated and paralleled on the same plane although the gate electrodes and cathode electrodes were isolated by dielectric layer, a so-called improved planar-gate triode structure. An electrophoretic process was developed to selectively deposit CNTs field emitters onto cathode electrodes in the CNTs suspension by an applied voltage between the gate electrodes and cathode electrodes. The optical microscopy and FESEM image showed that the CNTs emitters with the uniform packing density were selectively defined onto the cathode electrodes. In addition, field emission characteristics of an improved planar-gate triode with CNTs field emitters were investigated. The experiment results indicated that the turn-on voltage of this triode structure at current density of 1 μA/cm² was approximately 55 V. The anode current and gate current came to 396 μA and 325 μA, at gate voltage and anode voltage of 100 V and 4000 V, respectively and at the anode-cathode spacing of 2000 μm. The emission image became brighter and the luminous image with dot matrix on the anode plate obviously increased with the increase of the gate voltage. Moreover, the emission current fluctuation was smaller than 5% for 11 h, which indicated that the improved planar-gate triode has a good field emission performance and long lifetime.     

微束斑X射线源LaB_6阴极电子枪的设计

LaB6阴极电子枪是微束斑X射线源的关键组成部件之一。详细的讨论了电子枪的各组成电极 ,即LaB6阴极、Wehnelt栅极和阳极的设计。采用边界元法 (BEM )对电子枪内部电场电位和场强分布进行了有效的数值计算 ,并从阴极开始起利用四阶Runge Kutta法追踪电子的运动轨迹。给出了当阳极端口处电子束半径为设计值时各电极电压、电极结构等工作参量 ,利用该LaB6阴极电子枪可以满足微束斑X射线源需要高亮度、微细电子束发射的要求。     

一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备

采用Li3N掺杂电子注入层Alq3∶Li3N,制作了一种结构为ITO/Alq3 Alq3∶Li3N/Alq3/NPB/MoO3/Al的倒置底发射有机发光器件.其中ITO玻璃作为透明阴极,金属Al作为顶部阳极,在ITO阴极与电子传输层之间加入Li3N n型掺杂层,改善了该器件的电子注入和传输能力|在Al阳极与空穴传输层之间加入MoO3缓冲层,降低了Al阳极与NPB之间较大的空穴注入势垒,改善了空穴注入能力.实验表明:此结构的倒置底发射有机发光器件性能可达到传统结构的常用有机发光器件如ITO/NPB/Alq3/LiF/Al的性能,完全可以满足非晶硅薄膜晶体管有源有机发光器件中驱动电路的匹配及性能要求.     

All solid state ion-conducting cesium source for atomic clocks

Cesium containing glass with solid metal electrodes was used as a Cs atom source in a high vacuum system. A silver anode provides an injection source of highly mobile ions which sweep Cs to the cathode surface, from which they evaporate into the vacuum. Cathode metallization with finger patterns was used leaving bare glass for Cs evaporation. Laser absorption measurements show Cs vapor generation synchronous with an applied DC voltage.     

Development of a two‐dimensional imaging system of X‐ray absorption fine structure

A two‐dimensional imaging system of X‐ray absorption fine structure (XAFS) has been developed at beamline BL‐4 of the Synchrotron Radiation Center of Ritsumeikan University. The system mainly consists of an ionization chamber for I₀ measurement, a sample stage, and a two‐dimensional complementary metal oxide semiconductor (CMOS) image sensor for measuring the transmitted X‐ray intensity. The X‐ray energy shift in the vertical direction, which originates from the vertical divergence of the X‐ray beam on the monochromator surface, is corrected by considering the geometrical configuration of the monochromator. This energy correction improves the energy resolution of the XAFS spectrum because each pixel in the CMOS detector has a very small vertical acceptance of ～0.5 µrad. A data analysis system has also been developed to automatically determine the energy of the absorption edge. This allows the chemical species to be mapped based on the XANES feature over a wide area of 4.8 mm (H) × 3.6 mm (V) with a resolution of 10 µm × 10 µm. The system has been applied to the chemical state mapping of the Mn species in a LiMn₂O₄ cathode. The heterogeneous distribution of the Mn oxidation state is demonstrated and is considered to relate to the slow delocalization of Li⁺‐defect sites in the spinel crystal structure. The two‐dimensional‐imaging XAFS system is expected to be a powerful tool for analyzing the spatial distributions of chemical species in many heterogeneous materials such as battery electrodes.     

Study of a Waveguide CO_2 Laser with Two Parallel Tubes

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Time-resolved imaging of the electrical breakdown of planar microelectrode gap in atmospheric air

The aim of this study was to obtain time-resolved images of the electrical breakdown of a planar microelectrode gap along the surface of a glass substrate in atmospheric air. The obtained images revealed details of the events leading to the breakdown. First, a point light emission appeared at the cathode, indicating breakdown initiated by the field emission of electrons from the cathode under extremely high electric fields. Then, a flare-like broad light emission was generated at the anode. Finally, breakdown occurred over the entire gap by the expansion and merger of the two emissions.