Excitation and temperature dependence of the blue luminescence of ZnS crystals

The blue luminescence of pure and Al-, Au-, Ag-, Cu-, and Mn-doped ZnS crystals has been studied in the temperature range between LNT and RT and for different wavelengths of the exciting UV-light. All investigated crystals emit two blue bands. The energies of the maxima of these emission bands are independent of the temperature. The temperature dependence of the intensity ratio of the two blue luminescence bands can simulate a temperature shift of the blue emission. The experimental results support the assumption of an essentially uniform structure of the luminescence complex responsible for the visible luminescence of pure and doped ZnS phosphors.     

Crystallinity and interdiffusion in InP/InGaAs quantum wells grown by Hydride VPE

This paper reports the results of a study on interfacial quality and thermal interdiffusion for InP/InGaAs Quantum Wells (QW) grown by hydride VPE. By controlling well layer as thin as 25 Å, it was estimated that island and valley, whose height was one monolayer and whose lateral size was one third of exciton radius, existed at the interface. For the first time, interdiffusion coefficients for InP/InGaAs QW were obtained from 77K PL peak energy shift. Typical values were 2.5×10⁻¹⁹ cm²/sec and 1.5×10⁻¹⁸ cm²/sec for the annealing temperature of 700°C and 750°C, respectively. These values are over 10² times larger than that in AlGaAs/GaAs QW, and less 10⁻² times smaller than that in InAlAs/InGaAs QW.     

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

We report on the temperature dependences of the optical gap E_o and the photoconductivity threshold (?ω)_o for undoped hydrogenated amorphous silicon films. When increasing the temperature, both E_o and (?ω)_o are seen to linearly decrease at respective rates β= 3.5 10^?4 eV K^?1 (temperature range 290 K–460 K) and γ= 5.2 10^?4 eV K^?1 (temperature range 220 K – 360 K). At higher temperatures E_o decreases at the rate β = 14.3 10^?4 ev K^?1. Our results are discussed in terms of conduction in extended states. We show there is no physical reason in relating the temperature dependence of the activation energy and that of the gap as generally assumed. From optical absorption we deduce a minimum metallic conductivity σ_min the value of which agrees with Mott's predictions. On the contrary, σ_min measured from dark conductivity is nearly two orders of magnitude lower. A discussion is proposed infering band bending at the film substrate interface.     

Excitation dependence of the bending mode temperature in pulsed TE CO2 lasers

The observation of “steps” which appear in the gain immediately after excitation in pulsed TE CO₂ discharges is reported. It is shown that the measurement of the step size relative to the peak gain serves to determine the population of the lower laser level and thereby, the initial vibrational temperature (T₁) of the bending mode. This technique is applied to a study of T₁ as a function of the discharge input energy.     

Secondary emissions under two-photon resonance excitation of excitonic molecules in CuCl

The origin of the narrow secondary emission lines under two-photon just- resonance excitation of the excitonic molecule in CuCl is discussed. Luminescence due to cold, but not Bose-condensed excitonic molecules is concluded to be dominant. Recent experiments to discriminate between Raman scattering and luminescence by picosecond spectroscopy on these emissions are criticized.     

Light-polarization and intensity dependence of higher-order nonlinearities in excitonic FWM signals

A theory-experiment comparison for the intensity and polarization dependence of spectrally resolved transient four-wave-mixing signals is presented for a ZnSe single quantum well. Results for high intensities deviate from a simple model based on the optical Bloch equations for a five-level system whereas a microscopic theory for coherent excitonic and biexcitonic nonlinearities shows excellent agreement.Received: 8 July 2004, Published online: 14 December 2004PACS: 71.35.-y Excitons and related phenomena - 78.47. + p Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter     

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to −4 Å/°C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength.     

Anomalous electric-field dependence of excitonic Fano-resonance spectra in semiconductor quantum-wells

Optical absorption spectra due to Fano resonance (FR) of an exciton in a quantum well with an external electric field perpendicular to the layer plane are presented, based on multi-channel scattering calculations incorporating a hole-subband mixing effect. Peak values of the calculated FR spectra exhibit anomalous field-dependent changes. These cannot be accounted for by the commonly-known quantum-confined Stark effect (QCSE) that has been applied exclusively to bound state spectra. This behavior, ascribable to correlation between Fano couplings and the QCSE, is revealed just in high-resolution spectra, otherwise the field-dependence results in nothing but the same as that of the bound-state spectra.     

Temperature dependence of excitonic emission in cubic CdSe thin film

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.     

Temperature dependence of the excitonic spectra of monolayer transition metal dichalcogenides

We theoretically study the temperature dependence of the excitonic spectra of monolayer transition metal dichalcogenides using the O′Donnell equation, \({E_g}(T) = {E_g}(0) - S\langle \hbar \omega \rangle [cloth(\frac{{\hbar \omega }}{{2{k_B}T}} - 1)]\). We develop a theoretical model for the quantitative estimation of the Huang–Rhys factor S and average phonon energy \(\langle \hbar \omega \rangle \) based on exciton coupling with longitudinal optical and acoustic phonons in the Fröhlich and deformation potential mechanisms, respectively. We present reasonable explanations for the fitted values of the Huang–Rhys factor and average phonon energy adopted in experiments. Comparison with experimental results reveals that the temperature dependence of the peak position in the excitonic spectra can be well reproduced by modulating the polarization parameter and deformation potential constant.     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.     

Excitation spectroscopy,Raman scattering and the temperature dependence of the luminescence in highly excited red HgI2

The luminescence of red HgI₂ is investigated as a function of temperature, excitation intensity and wavelength. At high excitation intensity and low temperature an “M-band” emission dominates. This M-band is assigned to biexciton decay and bound exciton scattering with acoustic phonons (“acoustic wing”), this assumption being supported by the results of excitation spectroscopy. The energy of the biexciton is determined to be (4661 ± 1) meV. From the evaluation of Raman spectra, the phonon energies (1.9, 3.1 and 14.0 ± 0.2) meV are found. At higher temperatures two lines are observed, one of which is ascribed to exciton-free carrier scattering. Position and line shape are in good agreement with theoretical results. The other emission line is found to be due to scattering involving excitons or carriers bound to lattice defects.     

Ambient dependence of visible emissions in SrTiO3

We investigated the visible emission property of SrTiO₃ (STO) single crystals with high temperature annealing in some ambient conditions. We found that the green emission in STO, which should be associated with intermediate states originating from functional ionic defects inside the samples, such as cation/oxygen vacancies, showed strong ambient dependence. While high temperature annealing in the O₂ atmosphere suppressed the intensity of visible emission, annealing in an O₂-free atmosphere, such as N₂ or H₂, increased it. The broad visible emissions were fitted with three sub-modes, whose intensities showed different evolutions with respect to the ambient condition. Our study demonstrated the systematic development of defect states with the amount of the oxygen vacancies in STO.     

Excitation wavelength dependence of electron-hole drop velocities in Germanium

We show experimentally that the velocities of electron-hole drops in Germanium are independent of the wavelength of optical excitation. This result implies that the phonons emitted during the thermalization of electron-hole pairs have no effect on droplet motion and also permits us to draw conclusions about the decay of high frequency phonons. This leaves the “phonon wind” as originally proposed by Keldysh as the most likely cause of droplet motion.     

The dispersion curves of the excitonic polariton and the excitonic molecule in CdS and their interaction

By means of the two-photon Raman scattering (TPRS) process we investigate the dispersion relation of the excitonic polariton in the energetic regions around the A-exciton resonance and near half the bi-exciton energy in CdS. In a high resolution experiment an anomaly is observed due to two-polariton transitions to the excitonic molecule (biexciton) state. This anomaly is explained on the basis of a previously developed theory of the intensity dependent dielectric function. Excitation spectroscopy of the TPRS-lines yields information about the damping of the excitonic molecule. Luminescence assisted two polariton spectroscopy (LATS) experiments are performed to determine the eigenenergy of the biexciton as well as its dispersion curve.