Co/Pd and Co/Pd/CoNi multilayer films: Determination of the sign and magnitude of the exchange interaction of ferromagnetic layers separated by palladium layers

It is found that the exchange interaction of Co (5 nm)ferromagnetic layers via Pd in Co/Pd multilayer films and of Co (5 nm)and CoNi (5 nm) layers via the same nonmagnetic metal in Co/Pd/CoNi films can be both ferro-and antiferromagnetic. The period of the AF-F-AF oscillations is of the order of 0.8 nm, and the amplitude of the oscillations decays as a power-law function ~d _Pd ⁻² . Pis’ma Zh. éksp. Teor. Fiz. 66, No. 7, 487–491 (10 October 1997)     

Experimental investigation of the characteristic features of bremsstrahlung from high-energy electrons in thin amorphous targets

Radiation from 0–900 MeV electrons in thin amorphous films is investigated experimentally in the photon energy range 20–700 keV. The Landau-Pomeranchuk-Migdal suppression of the soft part of the bremsstrahlung spectrum and the Ter-Mikaélyan density effect are detected. Coherent bremsstrahlung on macroscopic inhomogeneities in the target material is observed. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 5, 369–373 (10 March 1997)     

Influence of samarium on optical absorption in thin films of the solid electrolyte RbAg4I5

The fundamental optical absorption of films of the solid electrolyte RbAg₄I₅ electrolyte films decreases (by approximately 25%) after vacuum evaporation of Sm films onto them, and a broad strong-absorption band with a maximum at 2.4 eV appears within the bad gap. The films bleach after 5–10 days in dry air. The observed phenomena are attributed to a high concentration (∼3×10²⁰ cm⁻³) of point defects, including F-centers, in nonstoichiometric RbAg₄I₅:Sm, and also to the oxidation of Sm. In colored films the ionic conductivity is σ⋍0.9σ ₀, and in bleached films it is close to the initial value σ ₀. Fiz. Tverd. Tela (St. Petersburg) 39, 1544–1547 (September 1997)     

Growth of zinc oxide nanostructures

Zinc oxide (ZnO) nanowhiskers have been prepared using a multilayer ZnO(50 nm)/Zn(20 nm)/ZnO(2μm) structure on a polished stainless steel (SS) substrate by high rate magnetron sputtering. The formation of uniformly distributed ZnO nanowhiskers with about 20 nm dia. and 2 to 5 μm length was observed after a postdeposition annealing of the prepared structure at 300–400° C. An array of highlyc-axis oriented ZnO columns (70–300 nm in dia. and up to 10 μm long) were grown on Si substrates by pulsed laser deposition (PLD) at a high pressure (1 Torr), and Raman studies showed the activation of surface phonon modes. The nanosized powder (15–20 nm) and nanoparticle ZnO films on glass substrate were also prepared by a chemical route. Nanowhiskers showed enhanced UV light detection characteristics, and the chemically prepared ZnO nanoparticle films exhibited good sensing properties for alcohol     

Influence of the quantum size effect for grazing electrons on the electronic conductivity of metal films

The thickness dependence of the electronic conductivity of thin (5–150 nm) single-crystal (100) films of refractory metals is investigated at different temperatures ranging from 4.2 K to room temperature. Regions of square-root, quasilinear, and quadratic dependences are observed. The quasilinear thickness dependence is explained by the influence of quantum effects on the transverse motion of electrons in the case when electron scattering by the film surfaces dominates. For macroscopic film thicknesses 30–50 nm, much greater than the Fermi wavelength of an electron, quantum corrections to the electronic conductivity reach values of the order of 50%. This is a consequence of the quantum size effect for grazing electrons, which leads to an anomaly in electron scattering by the film surfaces. The region of the quadratic thickness dependence corresponds to the quantum limit, and the square-root region corresponds to the classical limit. The effect is explained in a quasiclassical two-parameter model (the effective angle α* for small-angle electrons and the parameter γ, equal to the ratio of this angle to the diffraction angle) that takes into account the diffraction angular limits for grazing electrons. The effect occurs for parameters α*≪1 and γ∼1 and differs from the “ordinary” quantum size effect. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 11, 693–698 (10 December 1997)     

Nickel nanostructured materials from liquid phase photodeposition

Liquid Phase Photo-Deposition (LPPD) technique has been used to obtain both colloidal particles and thin films of metallic and chloride nickel from solutions of only precursor Ni(acac)₂ (acac=2,4-pentandionato). Metallic nickel was obtained from ethanol solutions by direct nickel(II) photoreduction at 254 nm and by acetone sensitised reaction at 300 nm. In this latter process the rate was higher than in the first one. NiCl₂ was formed from CCl₄ solution by a solvent-initiated reaction. TEM analysis, performed on colloidal particles of nickel, showed that their dimensions are in the range 2–4 nm. The films did not present carbon contamination and were characterized by AFM, XPS and GIXRD. Metallic films consisted of particles of 20–40 nm that are the result of the aggregation of smaller crystallites (4–5 nm). Larger agglomerations (around 200 nm) have been observed for NiCl₂ films.     

Formation of localized silver centers on the surface of titanium dioxide films using a scanning tunneling microscope

A scanning tunneling microscope (STM) is used to create changes in the surface relief of titanium dioxide films containing adsorbed silver ions. Structures measuring ∼10 nm, which presumably consist of silver particles, form on the film surface as a result of the application of short pulses with an amplitude ⩾15 V to an STM probe operating in the tunneling-current regime. Zh. Tekh. Fiz. 67, 72–76 (June 1997)     

Carbon nanotubes as nanoparticles collector

This communication reports on a new method for the collection of nanoparticles using carbon nanotubes (CNT) as collecting surfaces, by which the problem of agglomeration of nanoparticles can be circumvented. CNT (10–50 nm in diameter, 1–10 μm in length) were grown by thermal CVD at 923 K in a 7 v/v% C₂H₂ in N₂ mixture on electroless nickel-plated copper transmission electron microscopy (TEM) grids and Monel coupons. These samples were then placed downstream of an arc plasma reactor to collect individual copper nanoparticles (5–30 nm in diameter). It was observed that the Cu nanoparticles preferentially adhere onto CNT and that the macro-particles (diameter >1 μm), a usual co-product obtained with metal nanoparticles in the arc plasma synthesis, are not collected. Cu–Ni nanoparticles, a catalyst for CNT growth, were deposited on CNT to grow multibranched CNT. CNT-embedded thin films were produced by re-melting the deposited nanoparticles.     

Effect of alkali-metal doping on photoluminescence of CdS films

It is established that doping of CdS polycrystalline films with alkaline metals (Li, Na, K, Cs) results in an increase of luminescence intensity by 3–5 times compared with pure films. This increase is accounted for by the placement of alkaline-metal ions in V _Cd ²⁻ cation vacancies, which are nonradiative recombination centers in these films. From the dependences of the luminsecence intensity of the doped films on the synthesis conditions (deposition temperature, concentration of doping impurities, type of doping metal), the parameters that ensure the maximum luminescence intensity of the films are determined as T_dep ≈ 450°C and C_Me = 1·10⁻⁵ at %. The luminescence intensity decreases by 1–3% upon exposure of the films to UV light (λ_max = 365 nm, I = 10²¹ quanta·sec·cm⁻¹) for several hours. This is indicative of the stability of these films against UV radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 362–366, May–June, 2007.     

Formation of gold nanowires through self-assembly during scanning force microscopy

Gold films with a nominal thickness of 5–40 monolayers were grown on dielectric substrates and imaged by scanning force microscopy (SFM). The films originally consisted of well-separated or densely packed clusters. During imaging in contact mode, the morphology of the films changed drastically. At low coverage, i.e. Θ<10 monolayers, the well-known stripes originating from mobile clusters, eventually accumulated into larger aggregates, were observed. In contrast, at larger coverage, highly ordered structures consisting of one-dimensional wires evolved during scanning. They often were parallel with equal separation, i.e. well-defined periodicity, over distances of several μm. Typically, the wires were 5–10 nm high and 50–100 nm wide. Investigations of Au films prepared at varying temperature on different dielectric substrates allow us to suggest a self-assembling mechanism for wire formation in which gold is periodically collected by the SFM tip and redeposited as soon as a critical amount is reached. Received: 22 February 1999 / Accepted: 2 March 1999 / Published online: 7 April 1999     

Photodesorption from ultra-thin metal films – a comparison of SO<Subscript>2</Subscript> and NO<Subscript>2</Subscript> on Ag/Si(100)

The photochemistry of SO₂ on thin epitaxial Ag films (5–60 nm) deposited on Si(100) has been studied using laser light with the wavelengths of 266, 355, and 532 nm. SO₂ desorbs with cross sections of 1.7×10^-19,1.7×10^-20 and 2.9×10^-21 cm², respectively. The average translation energy, 〈E_trans/2k〉, is 440 K for 266 and 355 nm light, and 270 K for 532 nm light. Cross sections for a 60 nm thick Ag film are practically identical to the ones for Ag(111) as the substrate. An increase by a factor of ∼3.5 is observed when the film thickness is reduced to 5 nm for 266 and 355 nm light. No significant change is observed for 532 nm excitation. The film thickness has no significant influence on the translational energy of the photodesorbed molecules. The data are discussed in connection with the change of absorptivity of the metal film–semiconductor system. A model is put forward which takes into account the light absorption in the Si substrate and the reduced relaxation of excited electrons in Si. Modelling indicates that electrons excited in the Si substrate with energies and parallel momenta not allowed in Ag contribute to the surface chemistry after crossing the gap in the projected band structure of Ag(111). PACS 82.45.MP; 73.63.-b; 82.50.Bc     

Growth and structure of epitaxial diamond films grown on Si(111) single crystals

Experiments on growing single-crystal diamond films on silicon crystals with (111) surface orientation have been performed. Results attesting to the possibility of obtaining thin heteroepitaxial films are presented. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 5, 414–418 (10 March 1997)     

Thermal expansion of thin C60 films

The thermal expansion coefficient a and structure of C₆₀ films with thickness t∼3–10 nm were investigated in the temperature interval from room to liquid-nitrogen temperature by electron-optical methods. The thermal expansion coefficient was determined from the temperature shift of the diffraction maxima in the electron diffraction patterns. The objects of investigation were epitaxial C₆₀ films condensed in vacuum on a (100) NaCl cleavage surface and oriented in the (111) plane. A surface-induced size effect in the thermal expansion coefficient was observed. It was established that as t decreases α _f increases and is described well by the relation α _f=17·10⁻⁶ K⁻¹+8.3·10⁻⁵ nm K⁻¹ t ⁻¹. This relation was used to estimate the linear expansion coefficient α _s of the C₆₀ surface in the (111) plane as α _s=60·10⁻⁶K⁻¹, which is several times larger than the bulk value. The experimental results agree satisfactorily with the theoretical calculations of the mean-square displacements of molecules located in a region near the surface. Zh. éksp. Teor. Fiz. 114, 1868–1875 (November 1998)     

Spectral investigations of surface ordering in ultrathin molecular films

Surface molecular ordering in ultrathin molecular films is investigated. The optical transmission spectra of molecular films ranging in thickness from 2 to 13 smectic layers (6.7–43 nm) in the region of the electronic absorption bands in the smectic A phase of cyanobiphenyl CB9 are measured. The thickness and temperature dependences of the permittivity are determined. It is found that the orientational ordering of the molecules depends on the film thickness. The penetration depth of the surface molecular orientational order does not exceed two smectic layers (<7 nm). Zh. éksp. Teor. Fiz. 115, 1833–1842 (May 1999)     

Observation of extremely strong neutron scattering

The spectral dependence of the transmission of a collimated neutron beam by disordered quartz microstructures is measured. The observed mean free paths are very short, down to 200 nm. The results show that scattering with a characteristic value of the parameter kl⩽10 is realized near the neutron total external reflection edge. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 291–295 (10 March 1998)     

Surface plasmon–exciton transition in ultra-thin silver and silver iodide films

Silver thin films in the thickness range 2–10 nm produced by thermal evaporation onto glass substrates were systematically iodized and carefully characterized by X-ray diffraction, atomic force microscopy (AFM) and optical absorption spectroscopy. While the uniodized films are X-ray amorphous in keeping with their quasi-continuous nature and 2D islanded structure, briefly iodized films showed characteristic beta AgI structure. Most interestingly, AFM of Ag films revealed uniform triangle-shaped embryos whose shape does not change appreciably upon iodization. Optical absorption spectra of uniodized Ag films show intense surface plasmon resonance (SPR) features with maxima at 440, 484 and 498 nm for the films of thicknesses 2, 5 and 10 nm, respectively, with 5 nm films showing properties characteristic of optimally matched dielectric and electronic properties of the substrate and sample, respectively. Finally, an interesting and unique SPR–exciton phase transition is observed as the ultra-thin films are progressively iodized. These Ag and AgI films could be promising candidates for plasmonic and nanophotonic applications. PACS 78.66.-w; 73.20.Mf; 71.35.Cc; 42.70; 68.37.Ps; 42.82.-m     

Structure and transport properties of ultrathin YBa2Cu3O7−x films

The crystal structure and transport properties of epitaxial c-oriented YBa₂Cu₃O_7−x films are investigated for high-T _c layer thicknesses from 5 to 300 nm. The films were prepared by laser deposition. Films less than 30 nm thick become predominantly single-domain in the direction of the c axis. As the thickness decreases, the orthorhombicity parameter of the YBaCuO lattice decreases, which correlates with the critical temperature degradation observed in films less than 9 nm thick. The obtained thickness dependence of the effective microwave surface resistance of a YBaCuO film agrees well with the computational result obtained in the framework of local electrodynamics for samples with a constant microwave conductance. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 608–613 (25 April 1996)     

Long-term evolution of photoinduced light absorption in C60 films

It is found that photoinduced absorption in the energy range 0.6–2.1 eV in C₆₀ films grown by the same method can differ by a factor of 100. This change is attributable a 10⁶-fold increase in the relaxation time τ of electron-hole photoexcitations after working with the films for several months. It is established that the bimolecular recombination mechanism for photoexcitations (triplet excitons and polarons), which is typical of as-prepared and partially aged films, is superseded in fully aged films by thermally activated tunneling of localized photoexcitations. An investigation of the film transmission spectra in the photon energy range 0.2–5.0 eV shows that the long-time variations of the optical properties are associated with a decrease in the concentration of defects forming shallow tails of the density of states. An abrupt decrease of the relaxation time τ and the photoinduced absorption is observed in both types of films at T⩾80 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1303–1309 (July 1997)     

Fabrication and characterization of fluorine-doped thin oxide thin films and nanorod arrays via spray pyrolysis

This paper reports the synthesis and characterization of fluorine-doped tin oxide (FTO) thin films via intermittent spray pyrolysis utilizing a solution mixture of tin chloride pentahydrate and ammonia fluoride. Utilizing the same solution, nanorod arrays were fabricated via template-based growth. Uniform and crack-free FTO films over 20×20 mm with a thickness up to 900 nm have been routinely achieved; such FTO films demonstrate electrical resistivity as low as 2.2×10^-4 Ω cm as well as good optical transparency ranging from 75 to 85%. In addition, FTO nanorods were fabricated using template-filling methods at a temperature of 440 °C. The nanorods have a diameter of ∼160–250 nm, appear to be comprised of small nanoparticles 5–10 nm in size, and have a resistivity value of 4×10^-1 Ω cm. PACS 81.07.-b; 73.61.-r; 81.16.Be     

Thickness dependent phase transformation of magnetron-sputtered Ni–Mn–Sn ferromagnetic shape memory alloy thin films

In this study, the influence of film thickness on the first-order martensite–austenite phase transformation of Ni–Mn–Sn ferromagnetic shape memory alloy thin films has been systematically investigated. Different thicknesses of the Ni–Mn–Sn films (from ~100 to 2,500 nm) were deposited by DC magnetron sputtering on Si (100) substrates at 550 °C. X-ray analysis reveals that all the films exhibit austenitic phase with the L2₁ cubic crystal structure at room temperature. The grain size and crystallization extent increase with the increase in film thickness, but the films with thickness above ~1,400 nm show structural deterioration due to the formation of MnSn₂ and Ni₃Sn₄ precipitates. The improvement in the crystallinity of the film with thickness is attributed to the decrease in film–substrate interfacial strain resulting in preferred oriented growth of the films. Temperature-dependent magnetization measurements as well as electrical measurements demonstrate the complete absence of phase transformation for the film of thickness of ~120 nm. For thickness greater than 400 nm, film exhibits the structural transformation, and it occurs at higher temperature with better hysteresis as film thickness is increased up to ~1,400 nm, after which degradation of phase transformation phenomenon is observed. This degradation is attributed to the disorders present in the films at higher thicknesses. Film with thickness ~1,400 nm possesses the highest magnetization with the smallest thermal hysteresis among all the films and therefore best suited for the actuators based on first-order structural phase transformation. Nanoindentation measurements reveal that the higher values of hardness and elastic modulus of about 5.5 and 215.0 GPa obtained in film of 1,014 nm thickness can considerably improve the ductility of ferromagnetic shape memory alloys (FSMA) and their applicability for MEMS applications. The exchange bias phenomenon is also found to be present in the films of thickness 1014, 1412, and 2022 nm exhibiting prominent martensitic transformation. Film of thickness 2,022 nm exhibits maximum exchange bias of ~50 Oe and higher exchange bias blocking temperature of 70 K as compared to other films.