Fir magnetospectroscopy on (CuIn)1?xMn2xTe2

The paramagnetic resonance of Mn²⁺ in the diluted magnetic semiconductor (CuIn)_1–xMn_2xTe₂ was observed in a pulsed magnetic field up to 15 T at temperatures ranging from 4.2 K to 45 K. The temperature dependence of the line width of the paramagnetic resonance in (CuIn)_1–xMn_2xTe₂ resembles the behaviour of other diluted magnetic semiconductors. A Dzyaloshinski-Moriya exchange constant of approximately 0.62 K was derived. This value fits well with the values reported for II–VI based diluted magnetic semiconductors [1], if we consider the larger degree hybridization of the 3d electrons with the band electrons in chalcopyrite semiconductors.     

The dependence of the structural and optical properties on the Te mole fraction in ZnS1−xTex/GaAs heterostructures

Lattice-mismatched ZnS_1−xTe_x epilayers with various Te mole fractions on GaAs (100) substrates were grown by double well temperature gradient vapor deposition. X-ray diffraction patterns showed that the grown ZnS_1−xTe_x layers were epitaxial films. The photoluminescence spectra showed that the peak position of the acceptor-bound exciton (A⁰, X) varied dramatically with changing the Te mole fraction and that the behavior of the (A⁰, X) peak position of the ZnS_1−xTe_x epilayers with a small amount of the Te mole fraction was attributed to a bowing effect. The reflectivity and ellipsometry spectra showed that the absorption energy peak was significantly affected due to the Stoke's effect. These results provide important information on the structural and optical properties of ZnS_1−xTe_x/GaAs heterostructures for improving optoelectronic device efficiencies operating in the spectral range between near ultraviolet and visible regions.     

Structural and optical properties of ZnSe x Te1−-x solid solutions in thin-film form

Solid solutions of ZnSe _x Te_1–x (0. 1 x 1) were synthesized by vacuum fusion of stoichiometric proportions of ZnSe and ZnTe. X-ray diffraction data revealed that they have polycrystalline cubic zinc-blende structure. The calculated unit cell lattice constant (a) for the different compositions in powder form vary linearly, with molecular fractionx following Vegard's law:a(x) = 6.165 – 0.485x. Thin films of ZnSe _x Te_1–x (0.1 x 1) solid solutions deposited onto glass or quartz substrates by thermal evaporation in a vacuum of 10^–4 Pa were found to be polycrystalline with a preferred (1 1 1) orientation. The obtained data were confirmed by electron diffraction. The optical studies showed that ZnSe _x Te_1–x polycrystalline films of different compositions have two direct transitions with corresponding energy gapsE _g andE _g + _so The variations in bothE _g andE _g + _so, withx indicate that ZnSe _x Te_1–x solid solution belongs to an amalgamation-type following quadratic equations with bowing parameters 1.251 and 1.275, respectively.     

Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1−xSb

A calculation is made of the dependences of the coefficient of the tellurium distribution K_Te and the electron concentration n in Al_xGa_1–xSb on the composition of the solid solution and the growth temperature. It is shown that K_Te must decrease with increasing x. The dependence of K_Te on the temperature is also determined by x. Experimental results were obtained on Al_xGa_1–x Sb (0 x 0.74) films grown by liquid epitaxy. The electron concentration in the films was measured through the thermoelectric power and the capacitance-voltage characteristics of Schottky barriers. Satisfactory agreement with the results of the calculation was obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 19–25, April, 1980.We thank G. K. Arbuzov for assistance in preparing the surface-barrier structures.     

Semiempirical tight-binding modelling of III-N-based heterostructures

In this work, we present a second nearest neighbour sp³s^* semi-empirical tight-binding theory to calculate the electronic band structure of heterostructures based on group III-N binary semiconductors and their ternaries. The model Hamiltonian includes the second nearest neighbour (2nn) interactions, the spin–orbit splitting and the nonlinear variations of the atomic energy levels and the bond length with ternary mole fraction. Using this sp³s^* tight-binding approach, we investigated the electronic band structure of Al_1−xGa_xN/GaN and In_1−xGa_xN/GaN heterostructures as a function of composition and interface strain for the entire composition range (0≤x≤1). There is an excellent agreement between the model predictions and experiment for the principal bandgaps at Γ, L and X symmetry points of the Brillouin zone for AlN, GaN and InN binaries and Al_1−xGa_xN and In_1−xGa_xN ternaries. The model predicts that the composition effects on the valence band offsets is linear, but on the conduction band offsets is nonlinear and large when the interface strain and deformation potential is large.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

In selectively dopedn-Al_xGa_1–xAs/GaAs heterostructures with high-mobility two-dimensional electron gas (2 DEG) at the heterointerface a second conductive channel exists, if the Al_xGa_1–xAs layer is not totally depleted from free carries. The occurrence of parallel conductance has a deleterious effect on the performance of high-electron mobility transistors (HEMTs) fabricated from this material. Although in principle computable, parallel conductance depends on a large number of design parameters to be chosen for the heterostructure, which are additionally affected by the presence of deep electron traps inn-Al_xGa_1–xAs of composition 0.25n-Al_xGa_1–xAs/GaAs heterostructures is shown.     

Mössbauer study of the quasi-binary sections FeSn2-FeSb2 and FeSn2-FeTe2 of the corresponding ternary systems Fe-Sn-Sb and Fe-Sn-Te

⁵⁷Fe and¹¹⁹Sn Mössbauer and X-ray diffraction studies have been performed at room temperature to establish the presence of various intermediate phases in the quasibinary sections FeSn₂-FeSb₂ and FeSn₂-FeTe₂ {i.e. Fe (Sn_1–xSb_x)₂ and Fe (Sn_1–xTe_x)₂ for 0x1·0 of the respective ternary systems Fe-Sn-Sb and Fe-Sn-Te at 500°C. Using significantly different Mössbauer hyperfine parameters and the X-ray powder diffraction patterns for each existing stable phase, solid solubility limits and presence of single and multiphase regions have been estimated and are reported.     

Electric quadrupole interaction of111Cd in the system Sb1−xMx (M=Ag,Cd,In,Sn), Sb2Te3, Bi2Te3 and In2Te3

We have performed TDPAC-measurements to investigate the static quadrupole interaction of₁₁₁Cd in the classic semimetal Sb. The coupling constant depends on the concentration of small amounts of metal admixtures. The only exception is the system Sb_1–xAg_x. The temperature dependence of the efg in the narrow gap semiconductors Sb₂Te₃ and Bi₂Te₃ is similar to that one in Te. In contrast to these results the efg in the III–VI-semiconductor In₂Te₃ is temperature independent.     

Electrical switching and topological thresholds in Ge-Te and Si-Te glasses

Melt-quenched Ge_xTe_100-x glasses and Si_xTe_100-x glasses (15≤x≤25) have been found to exhibit memory switching, with threshold fields of the order of 4–11 kV/cm and 6–25 kV/cm, respectively. It is found that the switching voltages of Ge_xTe_100-x samples increase linearly with Ge content and the composition dependence of threshold voltage V_t shows a marked slope change at x=20, which has been earlier identified as the rigidity percolation threshold (RPT) of the system. Above the RPT, V_t of Ge-Te glasses continues to increase with composition until the boundary of bulk glass formation (x=28). On the other hand, the switching voltages of Si_xTe_100-x glasses increase with x, exhibiting a broad maximum around x=20 (RPT). The difference in the composition dependence of Si_xTe_100-x and Ge_xTe_100-x glasses has been understood on the basis of separation between the rigidity percolation threshold and the stoichiometric threshold (CT_ST) in these samples. The present results also indicate that the turnaround in the composition dependence of V_t and the subsequent minimum observed in the switching voltages of chalcogenide glasses is likely to be due to CT_ST and not to the chemical ordering threshold (CT_COCRN). PACS 61.43.Fs; 72.80.Ng; 85.30.Fg     

Dispersive optical constants of glassy AsSe1−xTex system

The compositional dependence of the optical constants, the refractive index n, and the absorption index k, of the AsSe_1−xTe_x thin films with 0<x<1.0 were determined in the spectral range of 400–2500 nm. The maximum value of the refractive index n, is shifted toward the long wavelength by increasing the Te content in the examined system. The values of the forbidden energy gap of the system have been determined and were correlated with the type and the amount of chemical bonds formed by the increasing Te content in the AsSe_1−xTe_x glassy system. The value of the dispersion energy E_d exhibits low value at the composition containing the same atomic percent of Se and Te.     

Dc and ac electrical conductivity of bulk CdSexTe1−x (0x0.4)

Measurements of the dc and ac conductivity were made for polycrystalline CdSe_xTe_1−x (0x0.4) at various frequencies (0.1–100 kHz) and at various temperatures (293–413 K). The temperature dependence of the dc conductivity was measured in the temperature range (293–413 K). It was found that the obtained dc activation energy for the investigated compositions decrease with the increase of Se content. The ac conductivity is found to be frequency and temperature dependent and obeys the Aω^s law, where s decreases with the increase of temperature. The ac conductivity of these compositions are explained on the basis of the correlated barrier hopping model.     

Epitaxy of AlxGa1−xSb films from a molten metal.

Conclusions Crystallization from a solution of antimony in a gallium-aluminum melt has been used to produce epitaxial Al_xGa_1–xSb films with x=0 to 0.4; isothermal (T = 450, 500, 550°C) and isoconcentration (0; 1; 2.4 at. % Al) sections have been drawn for the liquidus surface on the composition plane. X-ray microspectral analysis has been used to examine the composition of the Al_xGa_1–xSb films in relation to aluminum content in the melt, as well as the distribution of Al and Ga over the epitaxial film. These films had a perfect structure. The results enable one to determine the solution composition needed to grow Al_xGa_1–xSb epitaxial films at 450–550°C on gallium antimonide substrates, and it is shown to be possible to make heterostructures in the Al_xGa_1–xSb-GaSb system.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 9, pp. 146–148, September.We are indebted to Zh. I. Alferov and V. I. Shveikin for attention and support in this work.     

Magnetic and magnetotransport properties of Co-doped manganites with perovskite structure

A systematic study of the doping of the Mn-sites by cobalt in three series of manganites — La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals, La_2/3Ba_1/3(Mn_1−xCo_x)O₃ and La(Mn_1−xCo_x)O₃ ceramics has been performed. It was found that La(Mn_1−xCo_x)O₃ annealed at 800°C in the range 0.4x0.9 is a mixture of ferromagnetic domains with ordered Mn and Co ions and ionically disordered spin-glass domains. In the quenched samples the fraction of spin-glass-type component increases strongly. The La_2/3Ba_1/3(Mn_1−xCo_x)O₃ solid solutions exhibit also an evidence for phase separation in the range 0.5x0.8. All the La(Mn_1−xCo_x)O₃ samples show an insulating behavior, however, magnetoresistance reduces strongly when the cobalt content rises to x=0.5. The La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals show first-order phase transition below their Curie points associated with a change of ground state of the Co²⁺ ions. The magnetic phase diagrams are depicted. The results are discussed in terms of positive Mn³⁺–O–Mn⁴⁺, Mn³⁺–O–Mn³⁺, Mn⁴⁺–O–Co²⁺ and negative Mn⁴⁺–O–Mn⁴⁺, Co²⁺–O–Co²⁺, Co²⁺–O–Mn³⁺ superexchange interactions as well as Co²⁺ and Mn⁴⁺ ionic ordering.     

Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

Low-temperature photoluminescence measurements on nominally undoped Al_xGa_1–xAs/GaAs quantum well heterostructures (QWHs) grown by molecular beam epitaxy (MBE) exemplified the exclusivelyintrinsic free-exciton nature of the luminescence under moderate excitation conditions. Neither any spectroscopic evidence for alloy clustering in the Al_xGa_1–xAs barriers nor any extrinsic luminescence due to recombination with residual acceptors has been detected in single and double QWHs when grown at 670 °C under optimized MBE growth conditions. Carrier confinement in Al_xGa_1–xAs/GaAs QWHs starts at a well width ofL _z30 nm when x0.25. The minor average well thickness fluctuation ofL _z=4×10^–2nm as determined from the excitonic halfwidth allowed the realization of well widths as low asL _z=1 nm and thus a shift of the free-exciton line as high as 2.01 eV which is close to the conduction band edge of the employed Al_0.43Ga_0.57As confinement layer. The measurements further revealed a strongly enhanced luminescence efficiency of the quantum wells as compared to bulk material which is caused by the modified exciton transition probabilities due to carrier localization.     

Effects of double filling of Pb and Ba on thermoelectric properties of PbxBayCo4Sb11.5Te0.5 compounds by HPHT

Skutterudite compounds Pb_xBa_yCo₄Sb_11.5Te_0.5 (x≤0.23,y≤0.27) with bcc crystal structure have been prepared by the high pressure and high temperature (HPHT) method. The study explored a chemical method for filling Pb and Ba atoms into the voids of CoSb₃ to optimize the thermoelectric figure of merit ZT in the system of Pb_yBa_xCo₄Sb_11.5Te_0.5. The structure of Pb_xBa_yCo₄Sb_11.5Te_0.5 skutterudites was evaluated by means of X-ray diffraction. The Seebeck coefficient, electrical resistivity and power factor were performed from room temperature to 710 K. Compared with Co₄Sb_11.5Te_0.5, the thermal conductivity of Pb and Ba double-filled samples was reduced evidently. Among all filled samples, Pb_0.03Ba_0.27Co₄Sb_11.5Te_0.5 showed the highest power factor of 31.64 μW cm⁻¹ K⁻² at 663 K. Pb_0.05Ba_0.25Co₄Sb_11.5Te_0.5 showed the lowest thermal conductivity of 2.73 W m⁻¹ K⁻¹ at 663 K, and its maximum ZT value reached 0.63 at 673 K.     

Electrical properties of epitaxial heterostructures on a zinc sulfide base

An investigation is performed on the volt-ampere, volt-faraday, and photoelectrical characteristics of the epitaxial heterostructures n·ZnS-p-Ge, n-ZnS-p-GaAs, and n-ZnS-n-Si obtained by the method of vacuum evaporation in a quasiclosed volume. The heterotype structures are rectifying, and the current passage therein is described by the theories of space-charge-limited current. The quantity of surface states N_s.s=1.2·10¹²cm^–2 on the interface of n-ZnS-p-GaAs is computed, this being less than the theoretical value by almost two orders of magnitude. The heterostructures n-ZnS-n-Si were of two kinds. The volt-ampere characteristics of the structure of type I are rectifying with a rectification factor of 10⁴ at the 1 V level. The direct current had an exponential dependence and depended weakly on the temperature. The heterostructures had photosensitivity. Their no-load voltage was up to 0.2 V. The structures of type II had volt-ampere characteristics with double saturation. Starting from the model of two series-connected Schottky diodes, the heights of the barriers were computed for such heterostructures: Eg_ZnS=0.8–0.91 eV and E_Si=0.66–0.77 eV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 104–108, July, 1978.     

Ionic Synthesis of Ga1–x In x As Solid Solution Films

The Ga_1–x In _x As compound obtained by In-ion implantation (100 keV and (0.45–6)·10¹⁷ cm^–2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm^–2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor photoelectromotive force. It is shown that x increases from 0.07 up to 0.21, and the band gap decreases from 1.34 down to 1.21 eV as the implantation dose increases. The surface potential decreases from 0.79 down to 0.58 V. A high efficiency of electron-beam annealing is pointed out.     

Optical band gap and optical constants in a-Se80Te20−xPbx thin films

The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se₈₀Te_20−xPb_x (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.     

Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

Epitaxial films of the wide-bandgap II–VI beryllium chalcogenide semiconductors, BeTe, BeSe, and BeSeTe were grown on arsenic-terminated silicon substrates by MBE. Silicon was also epitaxially regrown on Be-chalcogenide films. Initial structural characterization revealed the desired smooth two-dimensional nature of the layer growth. The composition of BeSeTe ternary films was governed by the Be/Se flux ratio during deposition rather than by the Se/Te flux ratio. The variation in Be/Se flux ratio or in the sticking coefficients due to temperature gradients led to radial compositional inhomogeneity. Current versus temperature measurements of the Be-chalcogenide films at elevated temperatures analyzed assuming thermionic emission over the heterojunction barrier, showed conduction band offsets of 1.2 eV for the BeSe_0.41Te_0.59/As/Si and 1.3 eV for the BeSe/As/Si heterostructures. At room temperature, current density through BeSe/Si and BeSe_0.41Te_0.59/Si films was mid-10 ^{− 9}A cm ^{− 2}at 0.1 MV cm ^{− 1}, similar to previously reported values for ZnS/Si, while BeTe/Si films had orders of magnitude higher current density, possibly due to interfacial recombination.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.