Structural transformations in MoO<Subscript>x</Subscript> thin films grown by pulsed laser deposition

In this work, laser-induced crystallization in MoO_x thin films (1.8x2.1) is reported. This transformation involves a MoO_x oxidation and subsequently a crystallization process from amorphous MoO₃ to crystalline MoO₃. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO_x to the thermodynamically stable MoO₃ crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO_x to a mixture of MoO₃ and the thermodynamically unstable MoO₃ crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. PACS 81.15.Fg; 61.80.Ba; 78.30.-j     

Structural and optical characterization of polycrystalline CdSe<Subscript>x</Subscript>Te<Subscript>1-x</Subscript> thin films

Solid solutions of CdSe_xTe_1-x (0.7x1) were synthesized by vacuum fusion of stoichiometric amounts of CdSe and CdTe constituents in a silica tube. X-ray and electron microscope diffractometry techniques revealed that the CdSe_xTe_1-x thin films were polycrystalline with a hexagonal structure. The variation of lattice constants with composition was found to obey Vegards law. The compositional dependence of the optical constants, the refractive index n and the absorption index k, of the films was determined in the spectral range of 400–2000 nm. The dispersion of the refractive index of the films could be described using the Wemple–DiDomenico single oscillator model. Changes of the dispersion parameters were also studied as a function of the mole fraction x. A plot representing ²=f(h) showed that the CdSe_xTe_1-x thin films of different compositions have two direct transitions corresponding to the energy gaps E_g and E_g+. The variation in either E_g or E_g+ with x indicates that this system belongs to the amalgamation type. The variation follows a quadratic dependence and the bowing parameters were found to be 0.4 and 0.5 eV, respectively. PACS 78.20.-e; 81.15.-z     

Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

Relationship between low frequency dielectric dispersion and ferroelectric phase transition in pulsed-laser-deposited Bi<Subscript>4-x</Subscript>La<Subscript>x</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin film

The frequency and temperature dependence of the complex dielectric constant of Bi_4-xLa_xTi₃O₁₂ (BLT, x=0.9) ferroelectric thin film was studied in the frequency range of 10^-110⁶ Hz and the temperature range of 298673 K. A low frequency dielectric dispersion (LFDD) was found. A model was proposed to account for this observed phenomena. The complex dielectric constant data obtained in the measured frequency and temperature ranges have been found to fit very well to the dielectric dispersion relation: ^*=+i/₀+[B(i)^n-1]/₀. The knee in the log of the electrical conductivity versus the reciprocal temperature curve occurs at T_c. The activation energies associated with charge conduction are E_a,II=0.73 eV below T_c and E_a,I=0.95 eV above T_c. The occurrence of an anomaly in both the n and parameters near T_c indicates a coupling between charge carries and phonons. PACS 77.55.+f; 77.80.-e; 77.22.Jp     

Equilibrium points of the tilted perfect fluid Bianchi VI<Subscript><Emphasis Type="Italic">h</Emphasis></Subscript> state space

We present the full set of evolution equations for the spatially homogeneous cosmologies of type VI_h filled with a tilted perfect fluid and we provide the corresponding equilibrium points of the resulting dynamical state space. It is found that only when the group parameter satisfies h > –1 a self-similar solution exists. In particular we show that for h > – there exists a self-similar equilibrium point provided that whereas for h < – the state parameter belongs to the interval (1, . This family of new exact self-similar solutions belongs to the subclass n = 0 having non-zero vorticity. In both cases the equilibrium points have a six-dimensional stable manifold and may act as future attractors at least for the models satisfying n = 0. Also we give the exact form of the self-similar metrics in terms of the state and group parameter. As an illustrative example we provide the explicit form of the corresponding self-similar radiation model ( = ), parametrised by the group parameter h. Finally we show that there are no tilted self-similar models of type III and irrotational models of type VI_h.     

Growth of polycrystalline LaNi<Subscript>1-x</Subscript>Co<Subscript>x</Subscript>O<Subscript>3</Subscript> (<Emphasis Type="BoldItalic">x</Emphasis> =0.3,0.5) thin films on Si(100) by pulsed laser deposition

Polycrystalline LaNi_1-xCo_xO₃ (x=0.5,0.3) thin films have been deposited on polished Si(100) substrates by pulsed laser deposition. The films are grown at 650 °C in ambient oxygen pressure of 0.4 mbar with an incident laser fluence of 1.5 J/cm² delivered by a KrF excimer laser. The lattice parameters of the as-grown films are slightly larger (0.05–0.4%) than those of the powders used to prepare the targets. The films exhibit weak texturing along the (012) direction. The low-temperature magnetic properties of the films, i.e. the coercive force, the remanence and the saturation magnetization, are enhanced compared to the powders. Furthermore, the x=0.3 film exhibits a low, almost temperature-independent resistivity above 200 K [(300 K)30 cm] and thus we propose it as a potential candidate material for electrode applications, e.g. in ferroelectric devices. PACS 68.55.-a; 73.61.-r; 81.15.Fg     

Inverse Problem for Harmonic Oscillator Perturbed by Potential,Characterization

Consider the perturbed harmonic oscillator Ty=-y+x²y+q(x)y in L²(), where the real potential q belongs to the Hilbert space H={q, xq L²()}. The spectrum of T is an increasing sequence of simple eigenvalues _n(q)=1+2n+_n, n 0, such that _n 0 as n. Let _n(x,q) be the corresponding eigenfunctions. Define the norming constants _n(q)=lim_xlog |_n (x,q)/_n (-x,q)|. We show that for some real Hilbert space and some subspace Furthermore, the mapping :q(q)=({_n(q)}₀, {_n(q)}₀) is a real analytic isomorphism between H and is the set of all strictly increasing sequences s={s_n}₀ such that The proof is based on nonlinear functional analysis combined with sharp asymptotics of spectral data in the high energy limit for complex potentials. We use ideas from the analysis of the inverse problem for the operator -ypy, p L²(0,1), with Dirichlet boundary conditions on the unit interval. There is no literature about the spaces We obtain their basic properties, using their representation as spaces of analytic functions in the disk.     

Dispersion of Singularities of Solutions for Schrödinger Equations

We consider the singularities of solutions for the Schrödinger evolution equation associated with where Q is a d×d real symmetric matrix with the eigenvalues ₁,,_d, and WC(R^d,R) satisfies W(x)=o(|x|²) as |x|. Under additional conditions, we show the dispersion of microlocal singularities of solutions due to the principal symbol in all directions at time and in the nondegenerate directions at t. We also show the weaker dispersion of microlocal singularities of solutions due to the subprincipal symbol W in the degenerate directions at t if W satisfies W(x)=O(|x|¹⁺) as |x| for some 0<<1 and additional conditions. In particular, we prove the dispersion of microlocal singularities of solutions at resonant times when H is a perturbed harmonic oscillator.Partly supported by Grand-in-Aid for Young Scientists (B) 14740110, Japan Society of the Promotion of Science; and Mathematical Sciences Research Institute in BerkeleyDedicated to Professor Mitsuru Ikawa on his sixtieth birthday     

Comparative study of hydrofullerides C<Subscript><Emphasis Type="Bold">60</Emphasis></Subscript>H<Subscript><Emphasis Type="BoldItalic">x</Emphasis></Subscript> synthesized by direct and catalytic hydrogenation

Hydrofullerides with hydrogen content up to 5 wt.% were obtained by direct and catalytic reactions with H₂ gas. Hydrogen content was monitored in situ using a gravimetric system, and verified by chemical analysis ex situ. It was found that pure C₆₀ reacts rapidly when exposed to H₂ gas at 673 K and 50–100 bar. Gravimetric study of this reaction showed that hydrogenation is saturated at about 5 wt.% of hydrogen. The mass of the sample goes through a maximum and with a longer reaction time its weight starts to decrease. This proves that hydrofullerides with high hydrogen content are not stable and strong hydrogenation results in the collapse of C₆₀ molecules. XRD studies showed that samples prepared by direct hydrogenation without a catalyst retain an original fcc structure with an increase of the cell parameter a up to 15.1 Å. Catalytic hydrogenation of C₆₀ with H₂ gas results in a decrease of the reaction temperature and formation of hydrofullerides with different types of crystal structures. PACS 61.48.+c; 61.10.Nz; 81.05.Tp     

Contactless density measurement of high-temperature BiFeO<Subscript>3</Subscript> and BaTiO<Subscript>3</Subscript>

The density of liquid and undercooled BiFeO₃ and high-temperature solid, liquid, and undercooled BaTiO₃ was measured with an electrostatic levitation furnace. The density was obtained with an ultraviolet-based imaging technique that allowed excellent sample contrast throughout all phases of processing, including at elevated temperatures. Over the 1250- to 1490-K temperature range, the density of liquid BiFeO₃ can be expressed as _L(T)=6.70×10³–1.31(T-T_m)(kgm^-3) (±2 per cent) with T_m=1423 K, yielding a volume coefficient of thermal expansion _L(T)=1.9×10^-4 K^-1. For BaTiO₃, the density of the solid can be expressed as _S(T)=5.04×10³–0.21(T-T_m) (T_m=1893 K) over the 1220- to 1893-K range, yielding a volume coefficient of thermal expansion _S(T)=4.2×10^-5 K^-1, whereas that of the liquid can be expressed as _L(T)=4.04×10³-0.34(T-T_m) over the 1300- to 2025-K range with _L(T)=8.4×10^-5 K^-1. PACS 77.84.-s; 81.05.Je; 81.20.n     

Microscopic bonding and macroscopic strain relaxations at Si-SiO<Subscript>2</Subscript> interfaces

Optical second harmonic generation studies of the temperature dependence of the phase angle differences from contributions of terrace and edge bonding at silicon–silicon dioxide interfaces prepared on vicinal Si(111) wafers have revealed an interface relaxation process at an annealing temperature between 850 and 900 °C. Complementary studies by synchrotron soft X-ray photoelectron spectroscopy have established that this relaxation is associated with changes in the concentration and composition of local suboxide bonding environments in an ultrathin, interfacial transition region that is approximately one molecular layer thick. This relaxation occurs at a significantly lower temperature than an approximately 990±10 °C relaxation of macroscopic compressive strain in the bulk of the SiO₂ film. This paper establishes an analogy between i) the Si–SiO₂ interface in which there is a transition from a rigid substrate, Si, to an ideal continuous random covalent network, SiO₂, in which the average number of bonding constraints/atom matches the network dimensionality, and ii) a concentration dependent transition between under- and over-constrained local bonding in non-crystalline glass alloys such as Ge_xSe_1-x. The interfacial suboxide transition region is demonstrated to have properties in common with a regime of alloy compositions in which self-organization reduces bond constraint induced strain, thereby stabilizing these compositions against aging as for example in time-dependent changes in the glass transition temperature. These comparisons provide important new insights into defect formation at Si–SiO₂ interfaces, as well as interfaces between Si and alternative high-k dielectrics being considered for advanced Si devices including Al₂O₃ and transition metal silicate alloys, e.g., (ZrO₂)_x(SiO₂)_1-x. This new perspective is also extended to interfaces between GaN and SiO₂, where the interfacial transition region is a suboxide of Ga, GaO_x, with x<1.5. PACS 85.30.Tv; 42.65.-k; 79.40.+z; 73.20.-r; 77.55.+f     

Magnetic and electrical investigations of Fe<Subscript>85-x</Subscript>Co<Subscript>x</Subscript>B<Subscript>15</Subscript> metallic glasses

The magnetic and electrical properties of metallic glasses with the general formula Fe_85-xCo_xB₁₅ were investigated over a large temperature range to study their concentration-dependent physical parameters. All of the samples investigated (x=17,21,30, and 40) were soft ferromagnets with coercive fields H_c1 Oe and high Curie temperatures slightly above 1200 K. The temperature-dependent magnetization behaved irregularly, and exhibited hysteresis during heating and subsequent cooling through the Curie temperature. The variation of the magnetization with temperature demonstrates that one or more phase transformations (crystallization) occurred in the course of the heating. The electrical resistivities exhibited positive temperature coefficients and minima at temperatures below 50 K. We did not observe a nonmonotonic variation of the magnetic and electrical properties with a monotonic change of the Fe_85-xCo_xB₁₅ composition that would correlate with the earlier proposed formation of strong nanoclusters in the vicinity of particular stoichiometrically close Fe:Co ratios. The good soft magnetic characteristics make the Fe_85-xCo_xB₁₅ metal glasses promising candidates for engineering materials in inductive applications. PACS 71.23.Cq; 75.75.+a     

Some applications of the discrete fourier transform to problems of crystal lattice deformation II

The method elaborated in [1] is applied to the solution of some problems for a plane lattice and the linear chain. The method can be used to investigate deformations around crystal lattice defects.

---

, [1] . .

     

A Generalized Hypergeometric Function II. Asymptotics and <Emphasis Type="Italic">D</Emphasis><Subscript><Emphasis Type="Italic">4</Emphasis></Subscript> Symmetry

In previous work we introduced and studied a function that generalizes the hypergeometric function. In this paper we focus on a similarity-transformed function , with parameters ⁴ related to the couplings c⁴ by a shift depending on a ₊ , a _– . We show that the -function is invariant under all maps w(), with w in the Weyl group of type D ₄ . Choosing a ₊ , a _– positive and real, we obtain detailed information on the |Re v| asymptotics of the -function. In particular, we explicitly determine the leading asymptotics in terms of plane waves and the c-function that implements the similarity R.     

Intrinsic carrier concentration in Hg1−xCdxTe

The effective mass of heavy holes has been determined on the basis of simultaneous analysis of the Hall coefficient and conductivity data obtained in the temperature region 100–300 K on well characterized p-type Hg_1–x Cd_xTe (x0·2) samples. Its value is 0·7m₀. The calculation of intrinsic carrier concentration for 0·19 x0·3 and 50 Kg T 300 K has been carried out using the above value of the effective mass of holes, Hansen's expression for the band gap and momentum matrix element from magneto-optical measurements.     

Interaction of running gratings of the space charge and conductivity in photorefractive Bi<Subscript>12</Subscript>Si(Ti)O<Subscript>20</Subscript> crystals

The simultaneous excitation and nonlinear interaction of the space-charge and photoconductivity gratings are studied experimentally in photorefractive Bi₁₂SiO₂₀ and Bi₁₂TiO₂₀. The measurements are performed using the diffraction technique, which implies the illumination of the crystal by an oscillating interference pattern (_r=532 nm) along with the application of dc and ac electric fields and detection of the diffracted probe beam (_p=650 nm). Such illumination excites the running photoconductivity grating, which interacts with the ac component of the applied field giving rise to the space-charge wave. Being the eigenmode of the space-charge oscillations, this wave reveals itself as a low-frequency resonant maximum at the frequency-transfer function of the detected signal. The drift mobilities of electrons are estimated using the developed technique: =(1.1–1.4)×10^-2 cm²/Vs (Bi₁₂SiO₂₀, T=296–298 K) and =2.8×10^-3 cm²/Vs (Bi₁₂TiO₂₀, T=293 K). PACS 42.65.Sf; 42.70.Nq     

Crystal structure and dielectric properties of a new complex perovskite oxide Ba<Subscript>2</Subscript>LaSbO<Subscript>6</Subscript>

The crystal structure and dielectric properties of a new perovskite material Ba₂LaSbO₆ are reported. Ba₂LaSbO₆ was synthesized for the first time by conventional solid state reaction process. X-ray diffraction (XRD) measurements and Rietveld analysis revealed that, contrary to the other Ba₂RESbO₆ (RE=Rare-Earth other than La) complex perovskites, which are cubic, Ba₂LaSbO₆ crystallizes in a monoclinic system having space group P2₁/n. Dielectric properties of Ba₂LaSbO₆ at frequencies up to 40 GHz and in temperatures ranging from 50 to 350 K were determined by analyzing the resonant modes in cavities totally filled with the measured material. The dielectric constant ()=15.8±0.2% and at 77 K loss factor (tg)9×10^-4. Preliminary studies reveal that at the processing temperatures, Ba₂LaSbO₆ do not react with YBa₂Cu₃O_7- (YBCO) and Bi₂Sr₂CaCu₂O_x [Bi (2212)] superconductors. Having appropriate dielectric properties along with chemical stability with superconductors Ba₂LaSbO₆ can be used as a precursor as substrate for deposition of various passive HTS devices, or as an insulator in the active SIS structures. PACS 61.66.Fn; 61.10.Nz; 77.22.-d; 74.72.-h     

The transverse correlation length for randomly rough surfaces

It is shown by numerical simulations for a random, one-dimensional surface defined by the equationx ₃=(x ₁), where the surface profile function (x ₁) is a stationary, stochastic, Gaussian process, that the transverse correlation lengtha of the surface roughness is a good measure of the mean distance d between consecutive peaks and valleys on the surface. In the case that the surface height correlation function (x ₁)(x ₁)/²(x ₁)=W (|x ₁–x ₁|) has the Lorentzian formW(|x ₁|)=a ²/(x ₁ ² +a ²) we find that d=0.9080a; when it has the Gaussian formW(|x ₁|)=exp(–x ₁ ² /a ²), we find that d=1.2837a; and when it has the nonmonotonic formW(|x ₁|)=sin(x ₁/a)/(x ₁/a), we find that d=1.2883a. These results suggest that d is larger, the faster the surface structure factorg(|Q|) [the Fourier transform ofW(|x ₁|)] decays to zero with increasing |Q|. We also obtain the functionP(itx ₁), which is defined in such a way that, ifx ₁=0 is a zero of (x ₁),P(x ₁)dx ₁ is the probability that the nearest zero of (x ₁) for positivex ₁ lies betweenx ₁ andx ₁+dx ₁.     

Large magnetic entropy change in Nd<Subscript>2/3</Subscript>Sr<Subscript>1/3</Subscript>MnO<Subscript>3</Subscript>

In order to search for new materials for the application of magnetic refrigeration, the polycrystalline perovskite compound Nd_2/3Sr_1/3MnO₃ was prepared by a solid-state method. The dependence of the magnetization on the applied field and temperature was measured near the Curie temperature. In terms of Maxwells equation, the temperature dependence of the absolute value of the isothermal magnetic entropy change |S_M| at various applied fields from 1 T to 5 T was determined. The results showed that a large magnetic entropy change was observed in this compound. The maximum magnetic entropy change |S_M^max|can reach 3.25 J/kgK with an applied field of 1 T at the Curie temperature of 257.5 K, which equals that of Gd. At 5 T applied field, it is 7.57 J/kgK. Such good magnetocaloric properties make this compound a promising candidate for the application of magnetic refrigeration in the room-temperature range. PACS 74.25.Ha; 75.30.-m; 75.30.Sg; 75.50.-y; 75.60.-d     

Calculation of characteristics of benzene derivatives

The C₆H₅X compounds are considered as regards the energy and wave function _x as functions of within limits of –3 and +3, and also as functions of _cx within limits of 0. 5 and 1. 5. Convenient numerical tables are compiled.We are indebted to N.A. Prilezhaev and V.I. Danilov for extensive collaboration in this work.