On the Control of Plasma Parameters and Active Species Kinetics in CF<Subscript>4</Subscript> + O<Subscript>2</Subscript> + Ar Gas Mixture by CF<Subscript>4</Subscript>/O<Subscript>2</Subscript> and O<Subscript>2</Subscript>/Ar Mixing Ratios

The effects of both CF₄/O₂ and Ar/O₂ mixing ratios in three-component CF₄ + O₂ + Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF₄ for O₂ at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF₄/O₂ gas mixtures. At the same time, the substitution of Ar for O₂ at constant fraction of CF₄ results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details.     

Etching Characteristics and Mechanisms of TiO<Subscript>2</Subscript> Thin Films in CF<Subscript>4</Subscript> + Ar,Cl<Subscript>2</Subscript> + Ar and HBr + Ar Inductively Coupled Plasmas

The comparative study of etching characteristics and mechanisms for TiO₂ thin films in CF₄ + Ar, Cl₂ + Ar and HBr + Ar inductively coupled plasmas was carried out. The etching rates for TiO₂, Si and photoresist were measured as functions of gas mixing ratios at fixed gas pressure (10 mTorr), input power (800 W) and bias power (300 W). It was found that the maximum TiO₂ etching rate of ~130 nm/min correspond to pure CF₄ plasma while an increase in Ar fraction in a feed gas results in the monotonic non-linear decrease in the TiO₂ etching rates in all three gas mixtures. Plasma diagnostics by Langmuir probes and 0-dimensional (global) plasma modeling supplied the data on the densities of plasma actives specie as well as on particle and energy fluxes to the etched surface. It was concluded that, under the given set of experimental conditions, the TiO₂ etching kinetics in all gas systems correspond to the ion-assisted chemical reaction with a domination of the chemical etching pathway. It was found also that the differences in the absolute TiO₂ etching rates correlate with the energy thresholds for TiO₂ + F, Cl or Br reaction, and the reaction probabilities for F, Cl and Br atoms exhibit the different changes with the ion energy flux according to the volatility of corresponding etching products.     

Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios

An investigation of etching behaviors for Mo and Al₂O₃ thin films in O₂/Cl₂/Ar inductively coupled plasmas at constant gas pressure (6 mTorr), input power (700 W) and bias power (200 W) was carried out. It was found that an increase in Ar mixing ratio for Cl₂/Ar plasma results in non-monotonic etching rates with the maximums of 160 nm/min at 60 % Ar for Mo and 27 nm/min at 20 % Ar for Al₂O₃. The addition of O₂ in the Cl₂/Ar plasma causes the non-monotonic Mo etching rate (max. 320 nm/min at 40–45 % O₂) while the Al₂O₃ etching rate decreases monotonically. The model-based analysis of etching kinetics allows one to relate the non-monotonic etching rates in Cl₂/Ar plasma to the change in the etching regime from the ion-flux-limited mode (at low Ar mixing ratios) to the neutral-flux-limited mode (for high Ar mixing ratios). In the Cl₂/O₂/Ar plasma, the non-monotonic Mo etching rate is probably due to the change in reaction probability.     

Amino-functionalized pore-expanded SBA-15 for CO2 adsorption

The adsorption of CO₂ on pore-expanded SBA-15 mesostructured silica functionalized with amino groups was studied. The synthesis of conventional SBA-15 was modified to obtain pore-expanded materials, with pore diameters from 11 to 15 nm. Post-synthesis functionalization treatments were carried out by grafting with diethylenetriamine (DT) and by impregnation with tetraethylenepentamine (TEPA) and polyethyleneimine (PEI). The adsorbents were characterized by X-ray diffraction, N₂ adsorption–desorption at 77 K, elemental analysis and Transmission Electron Microscopy. CO₂ capture was studied by using a volumetric adsorption technique at 45 °C. Consecutive adsorption–desorption experiments were also conducted to check the cyclic behaviour of adsorbents in CO₂ capture. An improvement in CO₂ adsorption capacity and efficiency of amino groups was found for pore-expanded SBA-15 impregnated materials in comparison with their counterparts prepared from conventional SBA-15 with smaller pore size. PEI and TEPA-based adsorbents reached significant CO₂ uptakes at 45 °C and 1 bar (138 and 164 mg CO₂/g, respectively), with high amine efficiencies (0.33 and 0.37 mol CO₂/mol N), due to the positive effect of the larger pore diameter in the diffusion and accessibility of organic groups. Pore-expanded SBA-15 samples grafted with DT and impregnated with PEI showed a good stability after several adsorption–desorption cycles of pure CO₂. PEI-impregnated adsorbent was tested in a fixed bed reactor with a diluted gas mixture containing 15 % CO₂, 5 % O₂, 80 % Ar and water (45 °C, 1 bar). A noteworthy adsorption capacity of 171 mg CO₂/g was obtained in these conditions, which simulate flue gas after the desulphurization step in a thermal power plant.     

Surface Properties of Low Density Polyethylene upon Low-Temperature Plasma Treatment with Various Gases

The surface of a LDPE was modified by Ar, O₂, N₂, CO₂ gaseous plasma. The changes in surface morphology and surface wettability were investigated using AFM and SEM. The surface chemical changes of LDPE were also characterized by FTIR-ATR. The SEM and AFM results demonstrated variable changes in surface roughness for different types of plasma gas used, the changes being more for the Ar and N₂ plasma treatments. Considering the nature of the LDPE film, XRD studies were carried out to determine changes in the percentage crystalinity. The results showed that all low pressure O₂, Ar, N₂, CO₂ gas plasmas improved the wettability of LDPE films. Contact angles decreased significantly depending on the discharge powers and exposure times. Surface morphology was also found to vary with plasma discharge powers, exposure times, and the type of gas being used. Ar and N₂ gas plasmas in general produced more superior results.     

Comparison of the Active Species in the RF and Microwave Flowing Discharges of N<Subscript>2</Subscript> and Ar–20 %N<Subscript>2</Subscript>

We report a detailed comparison between RF and microwave (HF) plasmas of N₂ and Ar–20 %N₂ as well as in the corresponding afterglows by comparing densities of active species at nearly the same discharge conditions of tube diameter (5–6 mm), gas pressure (6–8 Torr), flow rate (0.6–1.0 slm) and applied power (50–150 W). The analysis reveals an interesting difference between the two cases; the length of the RF plasma (~25 cm) is measured to be much longer than that of HF (6 cm). This ensures a much longer residence time (10^?2 s) of the active species in the N₂ RF plasma [compared to that (10^?3 s) of HF], providing a condition for an efficient vibrational excitation of N₂(X, v) by (V–V) climbing-up processes, making the RF plasma more vibrationally excited than the HF one. As a result of high V–V plasma excitation in RF, the densities of the vibrationally excited N₂(X, v > 13) molecules are higher in the RF afterglow than in the HF afterglow. Destruction of N₂(X, v) due to the tube wall is estimated to be very similar between the two system as can be inferred from the γ_v destruction probability of N₂(X, v > 3–13) on the tube wall (2–3 × 10^?3 for both cases) obtained from a comparison between the density of N₂(X, v > 3–9) in the plasmas to that of the N₂(X, v > 13) in the long afterglows. Interestingly enough, densities of N-atoms and N₂(A) metastable molecules in the afterglow regions, however, are measured to be very similar with each other. The measured lower density of N₂ ⁺ ions than expected in the HF afterglow is rationalized from a high oxygen impurity in our HF setup since N₂ ⁺ ions are very sensitive to oxygen impurity .     

Surface characterization of plasma‐modified poly(ethylene terephthalate) film surfaces

Poly(ethylene terephthalate) (PET) film surfaces were modified by argon (Ar), oxygen (O₂), hydrogen (H₂), nitrogen (N₂), and ammonia (NH₃) plasmas, and the plasma‐modified PET surfaces were investigated with scanning probe microscopy, contact‐angle measurements, and X‐ray photoelectron spectroscopy to characterize the surfaces. The exposure of the PET film surfaces to the plasmas led to the etching process on the surfaces and to changes in the topography of the surfaces. The etching rate and surface roughness were closely related to what kind of plasma was used and how high the radio frequency (RF) power was that was input into the plasmas. The etching rate was in the order of O₂ plasma > H₂ plasma > N₂ plasma > Ar plasma > NH₃ plasma, and the surface roughness was in the order of NH₃ plasma > N₂ plasma > H₂ plasma > Ar plasma > O₂ plasma. Heavy etching reactions did not always lead to large increases in the surface roughness. The plasmas also led to changes in the surface properties of the PET surfaces from hydrophobic to hydrophilic; and the contact angle of water on the surfaces decreased. Modification reactions occurring on the PET surfaces depended on what plasma had been used for the modification. The O₂, Ar, H₂, and N₂ plasmas modified mainly CH₂ or phenyl rings rather than ester groups in the PET polymer chains to form C? O groups. On the other hand, the NH₃ plasma modified ester groups to form C? O groups. Aging effects of the plasma‐modified PET film surfaces continued as long as 15 days after the modification was finished. The aging effects were related to the movement of C?O groups in ester residues toward the topmost layer and to the movement of C? O groups away from the topmost layer. Such movement of the C?O groups could occur within at least 3 nm from the surface. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3727–3740, 2004     

A Novel Dielectric-Barrier-Discharge Loop Reactor for Cyanide Water Treatment

A novel dielectric-barrier-discharge (DBD) loop reactor was designed for the efficient degradation of cyanide anion (CN^?) in water. The circulation of cyanide water as a falling film through plasma gas discharge zone enhanced gas–liquid mass and energy transfer and induced formation of H₂O₂ which was associated with the efficient destruction of CN^?. It was observed that among different discharge gases, the CN^? degradation rate decreased in the order of Ar > air > H₂/air mixture. Depending on discharge voltage, the treatment time for complete removal of 100 ppm CN^? in this DBD loop reactor is in the range 120–300 min. The dose of Cu²⁺ catalyst in combination with in situ production of H₂O₂ enhanced the destruction of CN^? apparently in this DBD loop reactor. The treatment time for complete degradation of 100 ppm CN^? decreased from 180 min with Ar DBD discharge alone to 40 min with 40 mg/L dose of Cu²⁺ ion in water, making it an efficient means to degrade cyanide water.     

On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure

An investigation of etching mechanism of low-temperature SiO₂ thin films in CF₄/Ar/O₂ inductively coupled plasmas at constant input power (900 W) and bias power (200 W) was carried out. It was found that that the variations of Ar/O₂ mixing ratio (0–50 %) at constant 50 % CF₄ fraction as well as the change in gas pressure (4–10 mTorr) resulted in non-monotonic SiO₂ etching rates. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the detailed information on formation-decay kinetics for plasma active species. The model-based analysis of etching kinetics showed that these effects were not connected with the non-monotonic change of fluorine atom density (as was found in several works for the binary CF₄/O₂ system), but resulted from the decrease in reaction probability and with the transition from neutral-flux to ion-flux-limited regimes of ion assisted chemical reaction.     

Plasma Characteristics and Antenna Electrical Characteristics of an Internal Linear Inductively Coupled Plasma Source with a Multi-Polar Magnetic Field

The development of a large-area plasma source with high density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, a novel internal-type linear inductive antenna referred to as “double comb-type antenna” was used for a large-area plasma source with the substrate area of 880 mm × 660 mm and the effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas on the order of 3.2 × 10¹¹ cm^?3 which is 50% higher than that obtained for the source without the magnetic field could be obtained at the pressure of 15 mTorr Ar and at the inductive power of 5,000 W with good plasma stability. The plasma uniformity <3% could be also obtained within the substrate area. When SiO₂ film was etched using the double comb-type antenna, the average etch rate of about 2,100 Å/min could be obtained with the etch uniformity of 5.4% on the substrate area using 15 mTorr SF₆, 5,000 W of rf power, and ?34 V of dc-bias voltage. The higher plasma density with an excellent uniformity and a lower rf antenna voltage obtained by the application of the magnetic field are related to the electron confinement in a direction normal to the antenna line.     

Improved Surface and Adhesion Properties of Wood-Polyethylene Composite by Treatment with Argon–Oxygen Low Pressure Plasma

Ar:O₂ low pressure plasma (Ar:O₂ LPP) surface treatment is proposed for increasing the surface energy and improve the adhesion of wood-polyethylene composite. The treatment time was varied between 20 and 90 s and the configuration of the shelves inside the plasma chamber (direct and secondary downstream) was also changed. Ar:O₂ LPP treatment during 30–40 s created new surface carbon–oxygen groups, increased the surface energy, mainly its polar component, reduced roughness and caused ablation of wood-polyethylene composite, irrespective of the configuration of the shelves inside the plasma chamber. The increase of the treatment time above 40 s did not cause additional surface modifications. Adhesion of the wood-polyethylene composite was noticeably increased when was treated with Ar:O₂ LPP. The surface modifications of Ar:O₂ LPP treated wood-polyethylene composite were partially lost during 24 h after treatment.     

Isoelectric points of plasma‐modified and aged silicon oxynitride surfaces measured using contact angle titrations

Acid‐base properties of metal oxides and polymers can control adhesion properties between materials, electrical properties, the physical structure of the material and gas adsorption behavior. To determine the relationships between surface isoelectric point, chemical composition and aging effects, plasma‐surface treatment of amorphous silicon oxynitride (SiO_xN_y) substrates was explored using Ar, H₂O vapor, and NH₃ inductively coupled rf plasmas. Overall, the Ar plasma treatment resulted in nonpermanent changes to the surface properties, whereas the H₂O and NH₃ plasmas introduced permanent chemical changes to the SiO_xN_y surfaces. In particular, the H₂O plasma treatments resulted in formation of a more ordered SiO₂ surface, whereas the NH₃ plasma created a nitrogen‐rich surface. The trends in isoelectric point and chemical changes upon aging for one month suggest that contact angle and composition are closely related, whereas the relationship between IEP and composition is not as directly correlated. Copyright © 2010 John Wiley & Sons, Ltd.     

Degradation of 2-Nitrophenol by Dielectric Barrier Discharge System: The Influence of Carbon Doped TiO<Subscript>2</Subscript> Photocatalyst Supported on Stainless Steel Mesh

This study investigated the degradation of 2-nitrophenol (2-NP) in aqueous solution by dielectric barrier discharge (DBD) system alone and its combination with supported TiO₂ photocatalysts. The TiO₂ photocatalyst supported on a stainless steel mesh was synthesised using sol–gel solution of 8% polyacrylonitrile (PAN)/dimethylformamide/TiCl₄ followed by pyrolysis in the furnace under N₂ atmosphere at temperatures of 300, 350, or 400 °C for 3 h holding time. The supported catalysts were characterized for their morphologies, functional groups, crystallinity, surface areas and elemental chemical states by high resolution scanning electron microscope (HRSEM), Fourier transform infrared, X-ray diffraction (XRD), Brunauer–Emmett–Teller (BET) surface area, and X-ray photoelectron spectroscopy. The influence of solution pH on the degradation of 2-NP was investigated. The residual concentration of 2-NP and the intermediate compounds were quantified and identified using high-performance liquid chromatography coupled with mass spectrometry (HPLC–MS). The concentration of the dissolved ozone, hydrogen peroxide and hydroxyl radicals generated by the DBD in the presence or absence of a catalyst was monitored using ultraviolet–visible spectroscopy and photoluminescence spectroscopy. The HRSEM, HRTEM, XRD and BET analysis revealed that the optimal thermal conditions to obtain well supported uniformly grown, highly active crystalline TiO₂ catalysts with high specific surface area was 350 °C at a 3 h holding time in N₂ atmosphere with a flow rate of 20 mL/min. The supporting procedure simultaneously carbon doped the photocatalyst. The DBD system alone without catalysts successfully mineralised 58.6% of 2-NP within 60 min while combined DBD/supported TiO₂ nanocrystals achieved 77.5% mineralisation within the same treatment time. The increase in mineralisation rate was attributed to the existence of a synergistic effect between the DBD system and the supported catalysts. 2-NP degradation proceeded via hydroxylation, nitration and denitration using DBD alone and combined DBD/Supported TiO₂ photocatalyst. Catechol, hydroquinone, hydroxyl-1,4-benzoquinone, 2-nitrohydroquinone, and 2,4-dinitrophenol were identified as major intermediate products. The order of production of free reactive species by DBD alone and combined DBD with supported photocatalyst was OH° > H₂O₂ > O₃.The results showed that the combined system was more than effective than DBD alone for the degradation of the 2-NP in aqueous solution.     

Effects of Ar‐ and Ar/O2‐plasma‐treated amorphous and crystalline polymer surfaces revealed by ToF‐SIMS and principal component analysis

The effects of argon (Ar) and a mixture of Ar and oxgyen(Ar/O₂) plasmas on amorphous and semi‐crystalline poly(bisphenol A hexane ether) thin films were investigated by time‐of‐flight secondary ion mass spectroscopy (ToF‐SIMS) and principal component analysis (PCA). PCA results of the ToF‐SIMS spectra indicate that an Ar/O₂ plasma produced less physical sputtering and had a higher chemical reactivity than did an Ar plasma, regardless of whether an amorphous or a crystalline surface was involved. However, the chemical differences between the Ar‐ and Ar/O₂‐plasma‐treated semi‐crystalline films were much smaller. The observed results can be explained by the higher resistance of the polymer crystalline regions to physical sputtering and chemical etching. Copyright © 2013 John Wiley & Sons, Ltd.     

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

A steady-state and high-flux helicon-wave excited N₂ plasma was used to oxynitride Si substrates for the synthesis of silicon oxynitride (SiON) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) have been extensively used to characterize surface quality of the SiON films, and it is found that a large amount of nitrogen (N) can be incorporated into the films. The result of XPS depth profiles shows that the N concentration is high near the surface and the oxide/Si interface. In the UPS spectra, absence of the reappearance of surface states suggests a resistance to clustering of the oxynitride layer. The N₂ flux and Ar mixture quantity can facilitate tuning of the dissociation characteristics in N₂ discharge. By modulating the N₂ fractions, the N⁺ density reaches maximum at a N₂/(N₂ + Ar) flow-rate ratio of 0.5, resulting in incorporation of more N atoms into the SiON films. Considering the easy control of N₂ plasma, our work opens up a new avenue for achieving high-yield SiON films at low temperature.     

Characterization of laser induced breakdown plasmas used for measurements of arsenic,antimony and selenium hydrides

Studies have been performed to characterize laser induced breakdown spectroscopy (LIBS) plasmas formed in Ar/H₂ gas mixtures that are used for hydride generation (HG) LIBS measurements of arsenic (As), antimony (Sb) and selenium (Se) hydrides. The plasma electron density and plasma excitation temperature have been determined through hydrogen, argon and arsenic emission measurements. The electron density ranges from 4.5 × 10¹⁷ to 8.3 × 10¹⁵ cm^?3 over time delays of 0.2 to 15 μs. The plasma temperatures range from 8800 to 7700 K for Ar and from 8800 to 6500 K for As in the HG LIBS plasmas. Evaluation of the plasma properties leads to the conclusion that partial local thermodynamic equilibrium conditions are present in the HG LIBS plasmas. Comparison measurements in LIBS plasmas formed in Ar gas only indicate that the temperatures are similar in both plasmas. However it is also observed that the electron density is higher in the Ar only plasmas and that the emission intensities of Ar are higher and decay more slowly in the Ar only plasmas. These differences are attributed to the presence of H₂ which has a higher thermal conductivity and provides additional dissociation, excitation and ionization processes in the HG LIBS plasma environment. Based on the observed results, it is anticipated that changes to the HG conditions that change the amount of H₂ in the plasma will have a significant effect on analyte emission in the HG LIBS plasmas that is independent of changes in the HG efficiency. The HG LIBS plasmas have been evaluated for measurements of elements hydrides using a constant set of HG LIBS plasma conditions. Linear responses are observed and limits of detection of 0.7, 0.2 and 0.6 mg/L are reported for As, Sb and Se, respectively.     

Rotating Gliding Arc Assisted Water Splitting in Atmospheric Nitrogen

In this study, hydrogen production from water splitting in N₂ using an atmospheric pressure rotating gliding arc plasma was investigated. The effect of input H₂O concentration and total flow rate on the performance of the plasma water splitting process (e.g., H₂ and O₂ yield, H₂ production rate, and energy yield of H₂) was investigated. N₂ showed a pronouncedly facilitating effect on the H₂O splitting and H₂ production process due to the reactions of the excited N₂ species [e.g., electronically excited metastable N₂(A)] with the H₂O molecules. The maximum H₂ production rate reached up to 41.3 μmols^?1, which is much higher than that of other typical non-thermal plasmas (e.g., ~0.2 μmols^?1 for a dielectric barrier discharge). Optical emission diagnostics has shown that in addition to the NO, N₂, and N₂ ⁺ that were observed in the pure N₂ spectra, strong OH and NH emission lines also appeared in the H₂O/N₂ spectra. OH radical is considered as a key intermediate species that could contribute to the formation of H₂, O₂, and H₂O₂. The increase of the H₂O concentration could lead to a continuous enhancement of the OH intensity. The rotational temperature of N₂ ⁺ dropped drastically from 2875 ± 125 to 1725 ± 25 K with the addition of 1 % (mol/mol) H₂O into the N₂ plasma.     

Properties of low-molecular-weight polyethylene treated with gas plasma

Polyethylene films were evaporated in gas plasmas of Ar, N₂, O₂, and H₂O. The deposits were analyzed by infrared (IR) spectroscopy to determine the concentration of characteristic functional groups. The deposit prepared in Ar-atmosphere had a rather high concentration of methyl group and many double bonds were produced in the film. The deposits prepared in Ar- and N₂-plasmas produced similar spectra, which showed twice the concentration of methyl group than the deposit in Ar-atmosphere and also contained a few carbonyl and hydroxyl groups. The film treated in O₂-plasma contained the largest amount of carbonyl group and the lowest number of double bonds among the plasma-treated deposits. Dielectric loss curves against temperature for the deposits treated in these plasmas showed a broad peak near 20°C. For O₂-plasma-treated film the loss tangent curves showed a sharp maximum. The activation energy for the relaxation of Ar-, O₂-, and H₂O-plasma-treated films had the same value of 50.6 kcal/mol. The observed relaxation in the films prepared in gas plasmas was considered due to the β process and was attributed to the motion of oxidized branched polyethylene.     

Synthesis of Poly(arylene ether amine)s from a Monomer Containing an Electron‐Donating Amine Group in a Nucleophilic Aromatic Substitution Reaction

Summary: Poly(arylene ether amine)s were synthesized by a nucleophilic aromatic substitution polycondensation of bis[4‐fluoro‐3‐(trifluoromethyl)phenyl]amine with several bisphenols. Even though the monomer has an electron‐donating diphenylamine moiety, which normally deactivates a nucleophilic aromatic substitution (S_NAr) reaction, the polymerization proceeded by a S_NAr reaction to give high‐molecular‐weight polymers. The polymers show good solubility in common organic solvents and have T_gs in the range of 123 °C to 177 °C.

High‐molecular‐weight poly(arylene ether amine)s synthesized by a S_NAr reaction with the monomer containing an electron‐donating diphenylamine moiety.     

A zirconium modified Co/SiO2 Fischer-Tropsch catalyst prepared by dielectric-barrier discharge plasma

Co/SiO₂ and zirconium promoted Co/Zr/SiO₂ catalysts were prepared using dielectric-barrier discharge (DBD) plasma instead of the conventional thermal calcination method. Fischer-Tropsch Synthesis (FTS) performances of the catalyst were evaluated in a fixed bed reactor. The results indicated that the catalyst treated by DBD plasma shows the higher FTS activity and yield of heavy hydrocarbons as compared with that treated by the conventional thermal calcination method. Increase in CO conversion was unnoticeable on the Co/SiO₂ catalyst, but significant on the Co/Zr/SiO₂ catalyst, both prepared by DBD plasma. On the other hand, heavy hydrocarbon selectivity and chain growth probability (α value) were enhanced on all the catalysts prepared by the DBD plasma. In order to study the effect of the DBD plasma treatment on the FTS performance, the catalysts were characterized by N₂-physisorption, H₂-temperature programed reduction (H₂-TPR), H₂-temperature-programmed desorption (H₂-TPD) and oxygen titration, transmission electron microscope (TEM) and X-ray diffraction (XRD). It was proved that, compared with the traditional calcination method, DBD plasma not only could shorten the precursor decomposition time, but also could achieve better cobalt dispersion, smaller Co₃O₄ cluster size and more uniform cobalt distribution. However, cobalt reducibility was hindered to some extent in the Co/SiO₂ catalyst prepared by DBD plasma, while the zirconium additive prevented significantly the decrease in cobalt reducibility and increased cobalt dispersion as well as the FTS performance.